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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Optically-switched submillimeter-wave oscillator and radiator having a switch-to-switch propagation delay

A submillimeter wave-generating integrated circuit includes an array of N photoconductive switches biased across a common voltage source and an optical path difference from a common optical pulse of repetition rate f sub 0 providing a different optical delay to each of the switches. In one embodiment, each incoming pulse is applied to successive ones of the N switches with successive delays. The N switches are spaced apart with a suitable switch-to-switch spacing so as to generate at the output load or antenna radiation of a submillimeter wave frequency f on the order of N f sub 0. Preferably, the optical pulse has a repetition rate of at least 10 GHz and N is of the order of 100, so that the circuit generates radiation of frequency of the order of or greater than 1 Terahertz.

Spencer, Michael G.↗
DOE OSTI2016

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials]

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag 4 In 3 Sb 67 Te 26 . Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Optimal Transmission Line Switching under Geomagnetic Disturbances

Recently, there have been increasing concerns about how geomagnetic disturbances (GMDs) impact electrical power systems. Geomagnetically-induced currents (GICs) can saturate transformers, induce hot spot heating and increase reactive power losses. These effects can potentially cause catastrophic damage to transformers and severely impact the ability of a power system to deliver power. To address this problem, we develop a model of GIC impacts to power systems that includes 1) GIC thermal capacity of transformers as a function of normal Alternating Current (AC) and 2) reactive power losses as a function of GIC. We also use this model to derive an optimization problem that protects power systems from GIC impacts through line switching, generator dispatch, and load shedding. We then employ state-of-the-art convex relaxations of AC power flow equations to lower bound the objective. We demonstrate the approach on a modified RTS96 system and UIUC 150-bus system and show that line switching is an effective means to mitigate GIC impacts. We also provide a sensitivity analysis of decisions with respect to GMD direction.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2018

Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

Here, we report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current–voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Dynamic switch matrix for the TDMA satellite switching system

Future high capacity satellite communication systems require signal processing on board satellites. The on-board signal processing includes switching of RF signals between multiple antennas to provide interconnection between the uplink and downlink beams. This paper describes the development of a dynamic switch matrix for a TDMA satellite switching system to be used in the next generation communications satellites. In this paper, a dynamic switch matrix, which includes the microwave switch matrix, the distribution control unit and the timing source, will be described. Several different microwave switch matrix architectures and switching devices were evaluated and compared. A unique coupler crossbar switch matrix architecture with dual-gate field effect transistor as switching element was developed. Experimental results of both microwave switch matrix (MSM) and distribution control unit (DCU) are presented. These test results verify the MSM with coupler crossbar architecture and dual-gate FET as switching element will meet the future SS-TDMA system requirements. Finally, the reliability of the dynamic switch matrix is addressed. The analysis shows reliability of 0.9981 for 7 year space operation can be achieved for the designed dynamic switch matrix.

Ho, P. T.↗
NASA NTRS2005

Different Pathogenesis of CCR5-Using Primary HIV-1 Isolates from Non-Switch and Switch Virus Patients in Human Lymphoid Tissue Ex Vivo

CCR5-utilizing HIV-1 variants (R5) typically transmit infection and dominate its early stages, whereas emergence of CXCR4-using (X4 or R5X4) HIV-1 is often associated with disease progression. However, such a switch in co-receptor usage can only be detected in approximately onehalf of HIV-infected patients (switch virus patients), and progression to immunodeficiency may also occur in patients without detectable switch in co-receptor usage (non-switch virus patients). Here, we used a system of ex vivo-infected tonsillar tissue to compare the pathogenesis of sequential primary R5 HIV-1 isolates from the switch and non-switch patients. Inoculation of ex vivo tissue with these R5 isolates resulted in viral replication and CCR5(+)CD4(+) T cell depletion. The levels of such depletion by HIV-1 isolated from non-switch virus patients were significantly higher than those by R5 HIV-1 isolates from switch virus patients. T cell depletion seemed to be controlled by viral factors and did not significantly vary between tissues from different donors. In contrast, viral replication did not correlate with the switch status of the patients; in tissues fiom different donors it varied 30-fold and seemed to be controlled by a combination of viral and tissue factors. Nevertheless, replication-level hierarchy among sequential isolates remained constant in tissues from various donors. Viral load in vivo was higher in switch virus patients compared to non-switch virus patients. The high cytopathogenicity of CCR5(+)CD4(+) T cells by R5 HIV-1 isolates from non-switch virus patients may explain the steady decline of CD4(+) T cells in the absence of CXCR4 using virus; elimination of target cells by these isolates may limit their own replication in vivo.

Iarlsson, Ingrid↗
DOE OSTI2019

Controller-Hardware-in-the-Loop Test Bed for Fast-Switching SiC-Based 50-kW PV Inverter

The recent advent of wideband gap power semiconductor devices will lay the path to the future power converters. These devices provide the advantage of high switching speed and lower losses. The high cost and high switching speeds of these devices provide a challenge in the development and validation of the fast switching inverter controls with accuracy of that of a hardware setup. In this paper an FPGA real-time simulator-based controller-hardware-in-the-loop (CHIL) testbed is used to verify the low-level and advanced inverter controls fast switching wide bandgap-based string photovoltaic inverter. The paper also includes development of the CHIL testbed, which is run at a time-step of 500 ns in order to implement 20 kHz switching frequency. The developed CHIL testbed is validated through experimental results from a three-phase, 50 kW, 480 VLLrms SiC devices based inverter.

14 SOLAR ENERGY↗
DOE OSTI2023

New trends in photonic switching and optical networking architectures for data centers and computing systems [Invited]

The rapid increases in data traffic coupled with user preferences are driving the data center and computing system service providers to offer energy-efficient, intelligent, flexible, cost-effective, high-capacity, and low-latency data services without added complexity to the users. Disaggregated heterogeneous reconfigurable computing systems realized by photonic switching and interconnects can enhance throughput and energy efficiency for artificial intelligence/machine learning (AI/ML) workloads, especially when aided by the AI/ML-enhanced control plane. Photonic switching and new optical networking architectures are expected to solve many of these challenging problems. This paper discusses new trends in photonic switching and optical network architectures for future data centers and computing systems summarized as follows: (1) flat reconfigurable disaggregated computing enabled by high-radix photonic switching and interconnects in data centers; (2) chiplet-based computing architectures empowered by embedded photonics toward heterogeneous reconfigurable computing; (3) nanosecond-scale photonic switching in data centers and computing systems; (4) AI/ML in self-driving, application-aware, and situation-aware data centers; (5) the emergence of flexible networking for cloud computing, edge computing, and split computing, as well as flexible networking for 5G/6G RF-optical networks; and (6) the deployment of embedded co-designed silicon photonics being considered for future data centers.

Yoo, S. J. Ben (ORCID:0000000274201871)↗
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
NASA NTRS2006

Air-bridge and Vertical CNT Switches for High Performance Switching Applications

Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT.Our first NEM structure, the air-bridge switch, consists of suspended single-walled nanotubes (SWNTs) that lie above a sputtered Nb base electrode, where contact to the CNTs is made using evaporated Au/Ti. Electrical measurements of these air-bridge devices show well-defined ON and OFF states as a dc bias of a few volts is applied between the CNT and the Nb-base electrode. The CNT air-bridge switches were measured to have switching times down to a few nanoseconds. Our second NEM structure, the vertical CNT switch, consists of nanotubes grown perpendicular to the substrate. Vertical multi-walled nanotubes (MWNTs) are grown directly on a heavily doped Si substrate, from 200 - 300 nm wide, approximately 1 micrometer deep nano-pockets, with Nb metal electrodes to result in the formation of a vertical single-pole-double-throw switch architecture.

nanoelectromechanical systems (NEMS) devices↗
NASA NTRS1987

Study of optoelectronic switch for satellite-switched time-division multiple access

The use of optoelectronic switching for satellite switched time division multiple access will improve the isolation and reduce the crosstalk of an IF switch matrix. The results are presented of a study on optoelectronic switching. Tasks include literature search, system requirements study, candidate switching architecture analysis, and switch model optimization. The results show that the power divided and crossbar switching architectures are good candidates for an IF switch matrix.

Su, Shing-Fong↗
NASA NTRS2011

Heat Switches Providing Low-Activation Power and Quick-Switching Time for Use in Adiabatic Demagnetization Refrigerators

An adiabatic demagnetization refrigerator (ADR) is a solid-state cooler capable of achieving sub-Kelvin temperatures. It neither requires moving parts nor a density gradient in a working fluid making it ideal for use in space-based instruments. The flow of energy through the cooler is controlled by heat switches that allow heat transfer when on and isolate portions of the cooler when off. One type of switch uses helium gas as the switching medium. In the off state the gas is adsorbed in a getter thus breaking the thermal path through the switch. To activate the switch, the getter is heated to release helium into the switch body allowing it to complete the thermal path. A getter that has a small heat capacity and low thermal conductance to the body of the switch requires low-activation power. The cooler benefits from this in two ways: shorter recycle times and higher efficiency. We describe such a design here.

Kimball, Mark O.↗
NASA NTRS2011

Heat Switches Providing Low-Activation Power and Quick-Switching Time for Use in Cryogenic Multi-Stage Refrigerators

An adiabatic demagnetization refrigerator (ADR) is a solid-state cooler capable of achieving sub-Kelvin temperatures. It neither requires moving parts nor a density gradient in a working fluid making it ideal for use in space-based instruments. The flow of energy through the cooler is controlled by heat switches that allow heat transfer when on and isolate portions of the cooler when off. One type of switch uses helium gas as the switching medium. In the off state the gas is adsorbed in a getter thus breaking the thermal path through the switch. To activate the switch, the getter is heated to release helium into the switch body allowing it to complete the thermal path. A getter that has a small heat capacity and low thermal conductance to the body of the switch requires low-activation power. The cooler benefits from this in two ways: shorter recycle times and higher efficiency. We describe such a design here.

Kimball, Mark O.↗
DOE OSTI2022

Operation and Control of Soft Switching Solid State Transformer as a Virtual Synchronous Machine for Photovoltaic Application

Possibility for control and operation of a three-phase solid state soft switching transformer based as a virtual synchronous machine or synchronverter has been investigated in this paper. The soft switching solid state transformer is used as an interface between the ac grid and a photovoltaic power generation unit supported by a battery bank. The control architecture investigated in this paper is that of a synchronverter to achieve inertial support to the grid and local loads. The operation of the soft switching solid state transformer has also been investigated as a V S M during unbalanced/distorted grid voltage condition. Control objective to achieve oscillation free power transfer between the ports (photovoltaic, battery and grid) has been achieved. The presented architecture has been verified for several important case studies via numerical simulations based on MATLAB/Simulink domain.

grid current controller↗
DOE OSTI2018

Advanced EMT and Phasor-Domain Hybrid Simulation With Simulation Mode Switching Capability for Transmission and Distribution Systems

Conventional electromagnetic transient (EMT) and phasor do-main hybrid simulation approaches presently exist for transmission system level studies and their simulation efficiency is generally constrained by the EMT simulation. With an increasing number of distributed energy resources and non-conventional loads being installed in the distribution systems, it is imperative to ex-tend the hybrid simulation application to include distribution systems and integrated transmission and distribution systems. Meanwhile, it is equally important to improve the simulation efficiency as the modeling scope and complexity of the detailed system in the EMT simulation increases. To meet both requirements, this paper introduces an advanced electromagnetic transient (EMT) and phasor domain hybrid simulation approach. This approach has two outstanding features: 1) a comprehensive phasor domain modeling framework which supports positive-sequence, three-sequence, three-phase and mixed three-sequence/three-phase representations; 2) a robust and flexible simulation mode switching scheme which enables simulation switching from hybrid simulation mode back to pure phasor domain dynamic simulation mode to achieve significantly improved simulation efficiency. The proposed method has been tested on integrated transmission and distribution systems, and the results show that with the developed simulation switching feature, the total computational time is significantly reduced compared to running the hybrid simulation for the whole simulation period, while good accuracy is maintained.

Huang, Qiuhua (ORCID:0000000184577429)↗
DOE OSTI2016

In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

Here, we study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co 40 Fe 40 B 20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

42 ENGINEERING↗
NASA NTRS1986

Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

Golomidov, Y. V.↗