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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials]

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag 4 In 3 Sb 67 Te 26 . Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Optimal Transmission Line Switching under Geomagnetic Disturbances

Recently, there have been increasing concerns about how geomagnetic disturbances (GMDs) impact electrical power systems. Geomagnetically-induced currents (GICs) can saturate transformers, induce hot spot heating and increase reactive power losses. These effects can potentially cause catastrophic damage to transformers and severely impact the ability of a power system to deliver power. To address this problem, we develop a model of GIC impacts to power systems that includes 1) GIC thermal capacity of transformers as a function of normal Alternating Current (AC) and 2) reactive power losses as a function of GIC. We also use this model to derive an optimization problem that protects power systems from GIC impacts through line switching, generator dispatch, and load shedding. We then employ state-of-the-art convex relaxations of AC power flow equations to lower bound the objective. We demonstrate the approach on a modified RTS96 system and UIUC 150-bus system and show that line switching is an effective means to mitigate GIC impacts. We also provide a sensitivity analysis of decisions with respect to GMD direction.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2018

Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

Here, we report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current–voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Controller-Hardware-in-the-Loop Test Bed for Fast-Switching SiC-Based 50-kW PV Inverter

The recent advent of wideband gap power semiconductor devices will lay the path to the future power converters. These devices provide the advantage of high switching speed and lower losses. The high cost and high switching speeds of these devices provide a challenge in the development and validation of the fast switching inverter controls with accuracy of that of a hardware setup. In this paper an FPGA real-time simulator-based controller-hardware-in-the-loop (CHIL) testbed is used to verify the low-level and advanced inverter controls fast switching wide bandgap-based string photovoltaic inverter. The paper also includes development of the CHIL testbed, which is run at a time-step of 500 ns in order to implement 20 kHz switching frequency. The developed CHIL testbed is validated through experimental results from a three-phase, 50 kW, 480 VLLrms SiC devices based inverter.

14 SOLAR ENERGY↗
DOE OSTI2023

New trends in photonic switching and optical networking architectures for data centers and computing systems [Invited]

The rapid increases in data traffic coupled with user preferences are driving the data center and computing system service providers to offer energy-efficient, intelligent, flexible, cost-effective, high-capacity, and low-latency data services without added complexity to the users. Disaggregated heterogeneous reconfigurable computing systems realized by photonic switching and interconnects can enhance throughput and energy efficiency for artificial intelligence/machine learning (AI/ML) workloads, especially when aided by the AI/ML-enhanced control plane. Photonic switching and new optical networking architectures are expected to solve many of these challenging problems. This paper discusses new trends in photonic switching and optical network architectures for future data centers and computing systems summarized as follows: (1) flat reconfigurable disaggregated computing enabled by high-radix photonic switching and interconnects in data centers; (2) chiplet-based computing architectures empowered by embedded photonics toward heterogeneous reconfigurable computing; (3) nanosecond-scale photonic switching in data centers and computing systems; (4) AI/ML in self-driving, application-aware, and situation-aware data centers; (5) the emergence of flexible networking for cloud computing, edge computing, and split computing, as well as flexible networking for 5G/6G RF-optical networks; and (6) the deployment of embedded co-designed silicon photonics being considered for future data centers.

Yoo, S. J. Ben (ORCID:0000000274201871)↗
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
DOE OSTI2022

Operation and Control of Soft Switching Solid State Transformer as a Virtual Synchronous Machine for Photovoltaic Application

Possibility for control and operation of a three-phase solid state soft switching transformer based as a virtual synchronous machine or synchronverter has been investigated in this paper. The soft switching solid state transformer is used as an interface between the ac grid and a photovoltaic power generation unit supported by a battery bank. The control architecture investigated in this paper is that of a synchronverter to achieve inertial support to the grid and local loads. The operation of the soft switching solid state transformer has also been investigated as a V S M during unbalanced/distorted grid voltage condition. Control objective to achieve oscillation free power transfer between the ports (photovoltaic, battery and grid) has been achieved. The presented architecture has been verified for several important case studies via numerical simulations based on MATLAB/Simulink domain.

grid current controller↗
DOE OSTI2018

Advanced EMT and Phasor-Domain Hybrid Simulation With Simulation Mode Switching Capability for Transmission and Distribution Systems

Conventional electromagnetic transient (EMT) and phasor do-main hybrid simulation approaches presently exist for transmission system level studies and their simulation efficiency is generally constrained by the EMT simulation. With an increasing number of distributed energy resources and non-conventional loads being installed in the distribution systems, it is imperative to ex-tend the hybrid simulation application to include distribution systems and integrated transmission and distribution systems. Meanwhile, it is equally important to improve the simulation efficiency as the modeling scope and complexity of the detailed system in the EMT simulation increases. To meet both requirements, this paper introduces an advanced electromagnetic transient (EMT) and phasor domain hybrid simulation approach. This approach has two outstanding features: 1) a comprehensive phasor domain modeling framework which supports positive-sequence, three-sequence, three-phase and mixed three-sequence/three-phase representations; 2) a robust and flexible simulation mode switching scheme which enables simulation switching from hybrid simulation mode back to pure phasor domain dynamic simulation mode to achieve significantly improved simulation efficiency. The proposed method has been tested on integrated transmission and distribution systems, and the results show that with the developed simulation switching feature, the total computational time is significantly reduced compared to running the hybrid simulation for the whole simulation period, while good accuracy is maintained.

Huang, Qiuhua (ORCID:0000000184577429)↗
DOE OSTI2016

In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

Here, we study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co 40 Fe 40 B 20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

42 ENGINEERING↗
DOE OSTI2016

Towards smart corrective switching: analysis and advancement of PJM's switching solutions

Transmission switching, as a power flow control mechanism that can reduce costs and improve reliability, has gained a lot of attention during the last decade. Despite its benefits, industry adoption has been very limited due to its computational complexity, stability and AC performance concerns. Pennsylvania New Jersey Maryland (PJM) has published a list of corrective switching solutions to relieve actual and post‐contingency network violations. The list is developed based on operators ’ prior knowledge and offline studies. This study employs a fast AC‐based real‐time contingency analysis (RTCA) tool with corrective transmission switching (CTS) functionality to analyse PJM's switching solutions with actual PJM data. The results show that the RTCA CTS tool is almost always able to find solutions that perform better than, or equally as well as, PJM's solutions. The results also show that PJM's list identifies solutions for only 3% of the problematic contingencies with post‐contingency violations over the course of one week. The RTCA CTS tool, however, is able to find corrective TS solutions for almost all the cases. The results suggest that CTS is ripe for industry adoption. The tool provides significant savings and would pave the road towards a smarter transmission network as an essential ingredient of the future smart grid.

Balasubramanian, Pranavamoorthy↗
DOE OSTI2016

Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf|CoFeB|MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A non-monotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Q-switched and gain-switched Fe:ZnSe lasers tunable over 360–515 µm

We report on room temperature gain-switched and Q-switched Fe:ZnSe lasers tunable over 3.60–5.15 µm pumped by radiation of an 2.94 µm Er:YAG laser. The maximum output energy was measured to be 5 mJ under 15 mJ of pump energy in gain-switched regime. We also demonstrated a mechanically Q-switched regime of oscillation of Fe:ZnSe lasers. This approach could be attractive for the development of high-energy short-pulse solid-state mid-IR systems operating over 3.6–5.2 µm spectral range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Deep Optical Switching on Subpicosecond Timescales in an Amorphous Ge Metamaterial

Active nanostructured optical components show promise as potential building blocks for novel light-based computing and data processing architectures. However, nanoscale all-optical switches that have low activation powers and high-contrast ultrafast switching have been elusive so far. Here, pump–probe measurements performed on amorphous-Ge-based micro-resonator metasurfaces that exhibit strong resonant modes in the mid-infrared are reported. Relative change is observed in transmittance of ΔT/T ≈ 1 with picosecond (down to τ ≈ 0.5 ps) free carrier relaxation rates, obtained with very low pump fluences of 50 μJ cm –2 . In this work, these observations are attributed to efficient free carrier promotion, affecting light transmittance via high quality-factor optical resonances, followed by an increased electron–phonon scattering of free carriers due to the amorphous crystal structure of Ge. Full-wave simulations based on a permittivity model that describes free-carrier damping through crystal structure disorder find excellent agreement with the experimental data. These findings offer an efficient and robust platform for all-optical switching at the nanoscale.

36 MATERIALS SCIENCE↗