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Results for “SWITCHING ELEMENT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

A switch element in the autophagy E2 Atg3 mediates allosteric regulation across the lipidation cascade

Autophagy depends on the E2 enzyme, Atg3, functioning in a conserved E1-E2-E3 trienzyme cascade that catalyzes lipidation of Atg8-family ubiquitin-like proteins (UBLs). Molecular mechanisms underlying Atg8 lipidation remain poorly understood despite association of Atg3, the E1 Atg7, and the composite E3 Atg12–Atg5-Atg16 with pathologies including cancers, infections and neurodegeneration. Here, studying yeast enzymes, we report that an Atg3 element we term E123IR (E1, E2, and E3-interacting region) is an allosteric switch. NMR, biochemical, crystallographic and genetic data collectively indicate that in the absence of the enzymatic cascade, the Atg3 E123IR makes intramolecular interactions restraining Atg3's catalytic loop, while E1 and E3 enzymes directly remove this brace to conformationally activate Atg3 and elicit Atg8 lipidation in vitro and in vivo. We propose that Atg3's E123IR protects the E2~UBL thioester bond from wayward reactivity toward errant nucleophiles, while Atg8 lipidation cascade enzymes induce E2 active site remodeling through an unprecedented mechanism to drive autophagy.

59 BASIC BIOLOGICAL SCIENCES↗

Configuration of an optical switch fabric using machine learning

An optical switch fabric comprises two or more optical switch elements. The optical switch elements are configured in a topology. A switch control has a plurality of bias control signals. The switch control can address one or more of the optical switch elements and can apply one of the bias control signals to bias of the addressed optical switch element to establish a switch setting. The topology and switch settings determine how each of one of the inputs is connected to each of one of the outputs of the optical switch fabric. The switch settings are determined by a machine learning process which includes a model creation. The model can be made to adapt dynamically during optical switch fabric operation.

Dupuis, Nicolas↗

Power converter having a gate drive circuit and method of operating

A power converter apparatus comprises a set of switching elements communicatively coupled with a set of gate drive circuits. Each gate drive circuit is configured to provide a respective drive signal to a corresponding switching element, each switching element being switchably responsive to the respective drive signal. The apparatus includes a controller module configured to control an output state of the power converter, and selectively change one of a respective gate resistance and a respective gate current of a corresponding subset of the gate drive circuits based on the output state of the power converter.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Nanosecond photonic switch architectures demonstrated in an all-digital monolithic platform

We present an all-digital, fully programmable, nanosecond-scale photonic switch platform, monolithically integrating electronics for actuation, tuning, and power-monitoring alongside switching elements, resulting in a scalable, packageable solution for high-radix photonic switch fabrics. Furthermore by utilizing this platform, we achieve record loss and extinction performances comprising a 2x2 Mach Zehnder switch with 0.8 dB of loss and 28 dB extinction and a 2x2 nested Mach Zehnder switch with 1.3 dB of loss and 38 dB extinction.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Push—pull microring-assisted space-and-wavelength selective switch

We introduce a novel design of a space-and-wavelength selective switch based on microring-assisted Mach–Zehnder interferometers. Multiple pairs of overcoupled microring resonators are incorporated as efficient and narrowband phase shifters and are driven in push–pull scheme. We design and demonstrate a 2 × <#comment/> 2 × <#comment/> 2 λ <#comment/> elementary switch block with full spatial and spectral switching capabilities. The switching device’s cross talk suppression and extinction ratio both exceed 21 dB. We measure over 75 GHz optical bandwidth per channel and less than 1.5 dB power penalty at 10 − <#comment/> 9 BER when two 32 Gbps on–off keying signals are loaded simultaneously. This new class of switching elements can further enable compact and high-performance space-and-wavelength selective switch fabrics without the need for wavelength (de)multiplexers or parallel switching planes.

Huang, Yishen (ORCID:0000000278710462)↗

A 0.2–2 GHz Time-Interleaved Multistage Switched-Capacitor Delay Element Achieving 2.55–448.6 ns Programmable Delay Range and 330 ns/mm 2 Area Efficiency

Simulation of radar returns, full-duplex systems, and signal repeaters require hundreds of ns of programmable broadband radio frequency (RF) delay in the signal path to simulate large distances in the case of radar returns, for signal cancellation in full-duplex, and for isolation from reflections in signal repeaters. However, programmable broadband RF delay has been limited to ones of ns due to challenges in miniaturization with low loss and low power consumption. In this work, we present a 0.2–2 GHz digitally programmable RF delay element based on a time-interleaved multistage switched-capacitor (TIMS-SC) approach. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. Further, the delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55–448.6 ns programmable delay range with < 0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm 2 area efficiency. Through the proposed approach, the device shows minimal delay change across a -40 °C to 85 °C temperature range and < 0.25 dB gain variation across delay settings. The device achieves 26 dB gain, 7.4 dB noise figure, and consumes 74 mW from a 1 V supply with an active area of 1.36 mm 2 .

42 ENGINEERING↗

A Modular SiC High-Frequency Solid-State Transformer for Medium-Voltage Applications: Design, Implementation, and Testing

The advancements in wide-bandgap devices are enabling applications of power electronic converters coupled directly with medium-voltage (MV) grids that incorporate galvanic isolation within the converter using high-frequency solid-state transformers (SSTs). This paper presents analysis, design, and the characterization results of a 50-kVA modular soft-switched ac-ac SST using silicon carbide (SiC) MOSFET for MV (>6 kV ac) applications. Here, the SST is comprised of two hard-switched ac-line interface bridges and a resonant dc-dc stage switched at approximately 180 kHz. To minimize the cost of switching elements per ampere and maximize the design flexibility, the design uses multiple discrete SiC devices of, readily available, 1700-V ratings. This paper covers the analysis of soft-switching operation, control architecture, converter design, and system-level integration.

17 WIND ENERGY↗

Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO 3 Film

A ferroelectric domain wall memory device exploits the presence (or absence) of domain walls as the basis for information storage. Although structural defects strongly influence ferroelectric domain wall nucleation and growth, this correlation is far from being fully understood. For example, a single defect can play opposing roles: it can act as a nucleation site to initiate domain switching or, conversely, serve as a pinning center inhibiting domain wall motion. This is particularly the case for antiphase boundaries (APBs), whose influence on switching remains relatively unexplored despite being ubiquitous in oxide perovskite ferroelectrics. Here, we use aberration-corrected scanning transmission microscopy and in situ transmission electron microscopy under an applied bias to extensively characterize the influence of an APB on the switching behavior in a (110)-oriented BiFeO 3 thin film. We demonstrate that deterministic nucleation occurs in the proximity of a vertically oriented APB, following which domain growth occurs laterally in a symmetric fashion. Atomic-scale structural analysis reveals that the shear operation vector for the APB is 1/2[110]; this half-unit-cell shift extends over a few nanometers, implying that the APB plane is inclined toward the imaging direction. The symmetric switching observation is attributed to local inhomogeneous lattice strain and a reduction of polarization caused by the APB. These results demonstrate that an extended structural defect can be used as an active switching element rather than a stumbling block in reprogrammable domain-wall-based devices. Ultimately, this will expand the capabilities of ferroelectric thin films for future electronic devices based on ferroelectric domain walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Terahertz Detection Using Enhanced Two‐Step Absorption in Photoconductive Metasurfaces Gated at λ = 1.55 µm

Abstract Superior ultrafast photoconductive properties make low temperature grown (LT) GaAs one of the best materials for photoconductive terahertz (THz) detection. However, the large bandgap of LT‐GaAs limits its operation to gating at wavelengths shorter than 870 nm. Here, it is demonstrated for the first time that nanostructuring the LT‐GaAs into a highly absorbing metasurface enables THz photoconductive detection with a pulsed laser at λ = 1.55 µm. The very weak sub‐bandgap absorption mediated by midgap states in LT‐GaAs is strongly enhanced using the concept of perfect absorption via degenerate critical coupling. Integrated with a THz antenna, the LT‐GaAs metasurface enables high sensitivity THz detection with a high dynamic range of 60 dB and large bandwidth up to 4.5 THz. The LT‐GaAs metasurface has the potential to serve as a universal ultrafast switching element for THz applications, enabling low‐cost, turn‐key THz systems for a variety of real‐world applications.

Jung, Hyunseung↗

Switching Time Probing in Electric Field–Assisted Magnetization of PbZrTiO{sub 3}/Cobalt Structure

Electric field–assisted full magnetization switching in a multiferroic heterostructure composed of a PbZrTiO{sub 3} (PZT) substrate and 100 nm cobalt (Co) layer was investigated. For this, by measuring magnetic in plane anisotropy of the sample, using magneto-optical Kerr effect (MOKE), it was shown that the sample has a uniaxial anisotropy. In addition, the coercive field of the Co layer can be tuned by applying an electric field to the PZT which can be used in electric field–assisted magnetization reversal in the Co layer. Direct measurement reveals that electric field–assisted magnetization switching in layers take place in about 100 μs that is in compatibility with domain wall motion. Our measurement is a promising technique for probing of switching time in electric field–assisted magnetization switching elements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Programmable delay device enabling large delay in small package

A programmable delay device that provides delays of more than 100 ns over a broad bandwidth is disclosed. The device includes an input stage that employs M sampling switched capacitor elements such that each sampling switched capacitor element samples at a rate of only 1/M of the fundamental sampling rate. The device includes a programmable delay stage with M programmable switched capacitor banks, each programmable switched capacitor bank having N delay switched capacitor storage elements. Thus, the programmable delay stage includes a total of M×N delay switched capacitor storage elements, thereby reducing the sampling rate by a factor of M×N. This reduced sampling rate permits much smaller sampling switches, resulting in reduced leakage current and enabling far longer programmable delay times. Lastly, the device includes an output reconstruction stage that reconstructs a delayed version of the input RF signal by combining signals from the programmable delay stage.

Forbes, Travis↗

Dual-wavelength Q-switched laser based on a lens-shaped Nd : YAG active element and a Cr{sup 4+}: YAG passive Q-switch

Dual-wavelength Q-switched lasing at wavelengths of 1047 and 1053 nm is achieved in a longitudinally diode-pumped laser with a lens-shaped Nd:YLF active element and a Cr{sup 4+} : YAG passive Q-switch. Dual-wavelength lasing is achieved as a result of transverse mode locking due to the choice of a cavity length corresponding to the close-to-semiconfocal configuration, which provides identical gains for the two laser wavelengths. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗