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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. Furthermore, the resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Hybrid metal–organic chalcogenide nanowires with electrically conductive inorganic core through diamondoid-directed assembly

Controlling inorganic structure and dimensionality through structure-directing agents is a versatile approach for new materials synthesis that has been used extensively for metal–organic frameworks and coordination polymers. However, the lack of ‘solid’ inorganic cores requires charge transport through single-atom chains and/or organic groups, limiting their electronic properties. Here, we report that strongly interacting diamondoid structure-directing agents guide the growth of hybrid metal–organic chalcogenide nanowires with solid inorganic cores having three-atom cross-sections, representing the smallest possible nanowires. The strong van der Waals attraction between diamondoids overcomes steric repulsion leading to a cis configuration at the active growth front, enabling face-on addition of precursors for nanowire elongation. These nanowires have band-like electronic properties, low effective carrier masses and three orders-of-magnitude conductivity modulation by hole doping. Furthermore, this discovery highlights a previously unexplored regime of structure-directing agents compared with traditional surfactant, block copolymer or metal–organic framework linkers.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb) 2 Te 3 film

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb) 2 Te 3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb) 2 Te 3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Interplay between intrinsic and stacking-fault magnetic domains in bi-layered manganites

We present a low temperature X-ray photoemission electron microscopy study of the bi-layered manganite compound La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} (BL-LSMO) to investigate the influence of stacking faults, which are structurally and magnetically different from the bi-layered host. In BL-LSMO small magnetic moment persists to T* = 300K, well above the Curie temperature of 120K (T{sub C}). Our magnetic images show that 3D stacking faults are responsible for the T* transition. Furthermore, close to the T{sub C}, stacking faults are well coupled to the bi-layered host with latter magnetic domains controlling the spin direction of the stacking faults. Contrary to recent reports, we find that stacking faults do not seed magnetic domains in the host via an exchange spring mechanism and the intrinsic T{sub C} of the BL-LSMO is not lower than 120K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Ideal charge-density-wave order in the high-field state of superconducting YBCO

Significance Compelling evidence of various forms of nonsuperconducting electronic order in the cuprate high-temperature superconductors has fundamentally altered our understanding of the essential physics of these materials. However, it has been difficult to establish the nature of the quantum (zero-temperature) phases that compete and/or coexist with superconductivity. By studying high-quality crystals of YBCO using an X-ray laser and pulsed magnetic fields, we have established that the field induced charge-density-wave (CDW) order that arises when superconductivity is suppressed at low temperatures is incommensurate, unidirectional, and 3D-ordered. While disorder ultimately precludes true CDW long-range order, there does appear to be a sharply defined crossover field, which we associate with a transition to a nematic state with long-range orientational order.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Ground motion improvements in SPEAR3

SPEAR3 is a third-generation synchrotron light source storage ring, about 234 meters in circumference. To meet the beam stability requirement, our goal is to ultimately achieve an orbit variation (relative to the photon beam lines) of less than 10% of the beam size, which is about 1 micron in the vertical plane. Hydrostatic leveling system (HLS) measurements show that the height of the SPEAR3 tunnel floor can vary by tens of microns daily without thermal insulation improvements. We present an analysis of the HLS data that shows that adding thermal insulation to the concrete walls of the storage ring tunnel dramatically decreased diurnal tunnel floor motion.

43 PARTICLE ACCELERATORS↗
DOE OSTI2011

Non-Uniform Switching of the Perpendicular Magnetization in a Spin-Torque Magnetic Nanopillar

Time-resolved scanning transmission x-ray microscopy (STXM) measurements were performed to study the current-induced magnetization switching mechanism in nanopillars exhibiting strong perpendicular magnetic anisotropy (PMA). This technique provides both short time (70 ps) and high spatial (25 nm) resolution. Direct imaging of the magnetization demonstrates that, after an incubation time of {approx} 1.3 ns, a 100 x 300 nm{sup 2} ellipsoidal device switches in {approx} 1 ns via a central domain nucleation and opposite propagation of two domain walls towards the edges. High domain wall velocities on the order of 100m/s are measured. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight into magnetization dynamics during the incubation and reversal period.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Amorphous Diamond: A High-Pressure Superhard Carbon Allotrope

Compressing glassy carbon above 40 GPa, we have observed a new carbon allotrope with a fully sp{sup 3}-bonded amorphous structure and diamondlike strength. Synchrotron x-ray Raman spectroscopy revealed a continuous pressure-induced sp{sup 2}-to-sp{sup 3} bonding change, while x-ray diffraction confirmed the perseverance of noncrystallinity. The transition was reversible upon releasing pressure. Used as an indenter, the glassy carbon ball demonstrated exceptional strength by reaching 130 GPa with a confining pressure of 60 GPa. Such an extremely large stress difference of >70 GPa has never been observed in any material besides diamond, indicating the high hardness of this high-pressure carbon allotrope.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials]

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag 4 In 3 Sb 67 Te 26 . Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗