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Low-Cost, Screen-Printed Silver Metal Complex Inks for Silicon Heterojunction Solar Cells
Screen printing using metal particle pastes, the current photovoltaic industry metallization standard, provides fast and reliable metal grids for silicon solar cells. Recently, metal complex or reactive metal inks are attracting research interest due to their significantly low cost and higher performance compared to traditional nanoparticle silver pastes. In this work, we demonstrate, for the first time, screen-printed high-efficiency silicon heterojunction solar cells metallized by silver metal complex inks on industrial G1-size (158.75 x 158.75 mm2) wafers. We demonstrate screen-printed Ag metal complex ink grid patterns with continuous fingers ~100-120 ..mu..m wide. The printed Ag grid is very thin (~1 ..mu..m), which is an order of magnitude thinner than the current ~20-30 ..mu..m fingers printed with low-temperature nanoparticle-based pastes. Double printing allows silicon heterojunction devices with efficiencies >20%. This is the highest efficiency so far, to our knowledge, of industrial solar cell precursors using this metallization technology. Simulation results suggested that increasing the thickness of the metal film does not significantly improve efficiency due to the dense, highly conductive films. So, a single print of ~1 ..mu..m finger would be enough to produce cells that perform similarly to a ~20 ..mu..m thick nanoparticle paste printed cells. Additionally, solar cells printed on G1 wafers with silver metal complex ink required more than 10 times less silver (~0.03 g) compared to those using silver/copper nanoparticle paste (~0.4 g of Ag). These results indicate that metal complex inks are a very promising replacement for silver nanoparticle pastes for industrial-scale metallization in an age of resource scarcity and high costs of noble metals.
Multiplexed Anodic Stripping Voltammetry Detection of Heavy Metals in Water Using Nanocomposites Modified Screen-Printed Electrodes Integrated With a 3D-Printed Flow Cell
In this study, we present multiplexed anodic stripping voltammetry (ASV) detection of heavy metal ions (HMIs)—As(III), Cd(II), and Pb(II)—using a homemade electrochemical cell consisting of dual working, reference and counter screen-printed electrodes (SPE) on polyimide substrate integrated with a 3D-printed flow cell. Working and counter electrodes were fabricated by the screen-printing of graphite paste while the Ag/AgCl paste was screen-printed as a reference electrode (Ag/AgCl quasi-reference electrode). The working electrodes were modified with (BiO) 2 CO 3 -reduced graphene oxide (rGO)-Nafion [(BiO) 2 CO 3 -rGO-Nafion] and Fe 3 O 4 magnetic nanoparticles (Fe 3 O 4 MNPs) decorated Au nanoparticles (AuNPs)-ionic liquid (IL) (Fe 3 O 4 -Au-IL) nanocomposites separately to enhance HMIs sensing. Electrochemical detection was achieved using square wave ASV technique. The desired structure of the flow electrochemical cell was optimized by the computational fluid dynamic (CFD). Different experimental parameters for stripping analysis of HMIs were optimized including deposition time, deposition potential and flow rate. The linear range of calibration curves with the sensing nanocomposites modified SPE for the three metal ions was from 0–50 μg/L. The limits of detection (S/N = 3) were estimated to be 2.4 μg/L for As(III), 1.2 μg/L for Pb(II) and 0.8 μg/L for Cd(II). Furthermore, the homemade flow anodic stripping sensor platform was used to detect HMIs in simulated river water with a 95–101% recovery, indicating high selectivity and accuracy and great potential for applicability even in complex matrices.
High Seebeck Coefficient from Screen-Printed Colloidal PbSe Nanocrystals Thin Film
Thin-film thermoelectrics (TEs) with a thickness of a few microns present an attractive opportunity to power the internet of things (IoT). Here, we propose screen printing as an industry-relevant technology to fabricate TE thin films from colloidal PbSe quantum dots (QDs). Monodisperse 13 nm-sized PbSe QDs with spherical morphology were synthesized through a straightforward heating-up method. The cubic-phase PbSe QDs with homogeneous chemical composition allowed the formulation of a novel ink to fabricate 2 μm-thick thin films through robust screen printing followed by rapid annealing. A maximum Seebeck coefficient of 561 μV K -1 was obtained at 143 °C and the highest electrical conductivity of 123 S m -1 was reached at 197 °C. Power factor calculations resulted in a maximum value of 2.47 × 10 -5 W m -1 K -2 at 143 °C. To the best of our knowledge, the observed Seebeck coefficient value is the highest reported for TE thin films fabricated by screen printing. Thus, this study highlights that increased Seebeck coefficients can be obtained by using QD building blocks owing to quantum confinement.
Investigating the effect of screen-printed structured graphite electrodes with low tortuosity for high-capacity and fast-charging lithium-ion batteries
A flexible screen-printed graphite electrode was fabricated as an anode for developing fast-charging lithium-ion batteries with low tortuosity. A homogenous anode ink was prepared by mixing graphite as the active material, carbon black (C45) as the conductive additive, and polyvinylidene fluoride (PVDF) as the binder in N-Methyl-2-pyrrolidone (NMP) solvent. The ink was deposited on a flexible copper foil via a stainless-steel screen consisting of an array of pores, that act as secondary pore networks (SPNs), using the screen-printing process. Lithium-ion battery half-cells were assembled using the printed graphite anode, lithium metal foil as the counter electrode, and 1.2 M lithium hexafluorophosphate (LiPF 6 ) in ethyl carbonate: ethyl methyl carbonate (EC: EMC = 3:7) as the electrolyte. The effect of SPNs on the cell performance was investigated by performing formation, rate and cycling tests on the assembled cells, at different C-rates. It was observed that the cells consisting of SPNs with a pore size of 100 μm and edge-to-edge distance of 100 μm between the pores exhibited significantly higher specific capacities of 168 and 129 mAh/g when compared to reference cells without SPNs, which had capacities of 120 and 85 mAh/g, at high C-rates of 4 C and 6 C, respectively. The cells with SPNs also demonstrated excellent cycling performance with ~ 95% capacity retention after 100 cycles at 2 C.
Design, Optimization, and In-Depth Understanding of Front and Rear Junction Screen-Printed Double-Side Passivated Contacts Solar Cells
In this work, detailed numerical modeling is performed for front junction (FJ) and rear junction (RJ) n-type Si solar cells with screen-printed double-side poly-Si based tunnel oxide passivated contacts (TOPCon). Fundamental understanding of both structures is crucial to explore factors that limit the efficiency potential of the two designs. By investigating several key parameters such as front poly sheet resistance and thickness, bulk material properties, and carrier transport in our simulation model, we determine and explain why RJ cells outperform FJ cells. Our findings reveal that FJ suffers from present technological limitations of p-poly based passivated contacts, namely, i) large recombination observed in textured p-TOPCon emitter and ii) low solid solubility and hole mobility in boron-doped poly-Si resulting in very high sheet resistance of front p-poly layers which must be made thin to reduce absorption losses. In contrast, RJ desensitized the cell efficiency to front sheet resistance allowing application of ultra-thin front n-poly layers and is therefore ideally suited for double-side TOPCon cells. Lastly, we have developed a roadmap for efficiency projections of commercial-type screen-printed RJ and FJ topologies reaching ~24% and >22.5% efficiencies respectively, quantifying and explaining the impact of technological innovations on the performance of each design.
Screen-Printed Complex Ag Inks for Si HJT Metallization
Metallization using reactive metal inks has recently attracted significant research interest due to its advantages in cost of materials and manufacturing, while still achieving performance comparable to traditional fire-through particle pastes. Here, we present for the first time the use of reactive silver (Ag) inks via industrial screen-printing and inkjet printing methods for the metallization of different Si surfaces used in tunneling oxide passivating contacts (TOPCon) and Silicon heterojunction (SHJ) solar cells. Printed Ag lines exhibit a conductivity of ~5 Mu O·cm, which is approximately 3 times that of bulk Ag (1.59 µO·cm). The printed metal has a thickness of ~0.5-1.5 Mu m, an order of magnitude smaller than the current fire-through metal finger thickness (~15 Mu m). Contact resistivity measurements of the screen-printed and inkjet-printed samples on a transparent conducting oxide (TCO) surface show a very low value of ~0.2-12 mO·cm 2. Photoluminescence images of the metallized samples demonstrate minimal surface passivation degradation compared to the non-metallized areas (?iVoc <3.5 mV). Scanning electron microscopy images (SEM) reveal the structure of the printed metals on the Si surfaces as porous but much denser than fire-through Ag by nanoparticle paste. In the final presentation, we will showcase our results of printing these reactive Ag inks on high-efficiency heterojunction and TOPCon solar cells with full-area M6 wafers. Additionally, the adhesion of these reactive Ag inks on different Si surfaces according to ASTM D3359-17, as well as the performance of solar cells after standard IEC 61215 freeze/thaw and damp heat tests, will be presented. These new metal inks show promising potential as an alternative to the currently dominant particle-based pastes, offering lower Ag consumption and lower processing temperatures without compromising performance.
Screen-Printed Contacts for Crystalline Silicon Solar Cells: An Overview
Over the years, the photovoltaic market, worldwide, has been witnessing a double-digit growth rate. The silicon solar cell manufacturing technology has evolved to utilize raw materials optimally to address this growth. One of the ways in which manufacturers are addressing the challenge is by increasing the cell size and making thinner wafers. With this change in parameters, understanding the metal contact formation in solar cells becomes paramount to improve their efficiency. Screen printing is a widely used method to form metal contacts on solar cells and is ideally suited for large-volume manufacturing. This paper presents a review of the (a) role of screen printing in various solar cell architectures and (b) existing models for current conduction and contact formation mechanisms. An alternate approach to current conduction and contact formation mechanism in silicon solar cells is proposed.
Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application
Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .
>24% screen printed Cu contacted n-TOPCon solar cells with successful implementation of LECO process
In this paper, we report the successful fabrication of >24.0 % efficiency n-TOPCon Si solar cells with screen-printed, fire-through Cu contact to n-TOPCon on the rear side and Ag contacted boron emitter on the front side by implementing optimized firing and LECO conditions. The highest efficiency (24.3%) Cu contacted n-TOPCon cell in this study showed excellent cell performance parameters with V oc >730 mV, J sc of 41.1 mA/cm 2 and FF of 80.8%, resulting in an absolute efficiency gap of 0.2% between Cu-contacted and fully Ag contacted n-TOPCon cells (24.5%). The mini-module fabricated with the Cu contacted n-TOPCon cell showed excellent reliability and durability of open-circuit voltage (V oc ), pseudo fill factor (pFF) and efficiency after prolonged damp-heat tests. Such high efficiency screen printed Cu contacted n-TOPCon cells provide unique opportunity to replace very expensive Ag contact on n-TOPCon with cheaper screen printable Cu metal pastes.
Design, Optimization, and In-Depth Understanding of Front and Rear Junction Screen-Printed Double-Side Passivated Contacts Solar Cells
Investigate the efficiency potential of n-type screen-printed poly-Si based double-side tunnel oxide passivated contacts (DS-TOPCon) silicon solar cells Establish key material/device parameters and technologies to attain practically achievable DS-TOPCon cell efficiency by Quokka 2D Develop fundamental understanding of underlying mechanisms governing cell operation in front junction (FJ) and rear junction (RJ) cell designs to explain why RJ is a better choice for DS-TOPCon structure
Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules
We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.
Direct Mercury Detection in Landfill Leachate Using a Novel AuNP-Biopolymer Carbon Screen-Printed Electrode Sensor
A novel Au nanoparticle (AuNP)-biopolymer coated carbon screen-printed electrode (SPE) sensor was developed through the co-electrodeposition of Au and chitosan for mercury (Hg) ion detection. This new sensor showed successful Hg2+ detection in landfill leachate using square wave anodic stripping voltammetry (SWASV) with an optimized condition: a deposition potential of −0.6 V, deposition time of 200 s, amplitude of 25 mV, frequency of 60 Hz, and square wave step voltage of 4 mV. A noticeable peak was observed at +0.58 V associated with the stripping current of the Hg ion. The sensor exhibited a good sensitivity of ~0.09 μA/μg (~0.02 μA/nM) and a linear response over the concentration range of 10 to 100 ppb (50–500 nM). The limit of detection (LOD) was 1.69 ppb, which is significantly lower than the safety limit defined by the United States Environmental Protection Agency (USEPA). The sensor had an excellent selective response to Hg2+ in landfill leachate against other interfering cations (e.g., Zn2+, Pb2+, Cd2+, and Cu2+). Fifteen successive measurements with a stable peak current and a lower relative standard deviation (RSD = 5.1%) were recorded continuously using the AuNP-biopolymer-coated carbon SPE sensor, which showed excellent stability, sensitivity and reproducibility and consistent performance in detecting the Hg2+ ion. It also exhibited a good reliability and performance in measuring heavy metals in landfill leachate.
Evaluation of phenolic antioxidant capacity in beverages based on laccase immobilized on screen-printed carbon electrode modified with graphene nanoplatelets and gold nanoparticles
A simple and highly sensitive electrochemical biosensor based on laccase immobilized onto a gold nanoparticles/graphene nanoplatelets-modified screen-printed carbon electrode (LACC/AuNP/GNPl/SPCE) was developed for the determination of hydroquinone (HQ) and other phenolic compounds. The biosensor shows excellent electro-catalytic activity towards oxidation of hydroquinone at a potential of -0.05 V (vs Ag/AgCl, 3 M KCl) in phosphate buffer as supporting electrolyte (0.1 M, pH 7.0) using hydrodynamic amperometry. Analytical characteristics uncover that the LACC/AuNP/GNPl/SPCE comprises a wide linear range for the dependence of the signal on HQ concentrations from 4 to 130 µM with a detection limit (3σ) of 1.5 µM. The repeatability (5 measurements, 100 µM hydroquinone) is ±2% and the reproducibility (5 biosensors, 100 µM hydroquinone) is ±3%. Interference studies of most common compounds with the determination of hydroquinone demonstrated negligible effects. Finally, the biosensor and the analytical method were applied to the determination of phenolic antioxidant capacity (AOC) in wine and blueberry syrup based on Trolox (6‑hydroxy‑2,5,7,8-tetramethylchromane-2-carboxylic acid) and hydroquinone equivalents. The results were evaluated by using their calibration curves which were satisfactory and agreed well with the results obtained by the reference method Trolox Equivalent Antioxidant Capacity assay (TEAC-Assay).
Screen-Printed SHJ Solar Cells with Complex Silver Inks
Metallization using complex metal inks has gained significant research interest due to its cost-effectiveness and ability to achieve performance comparable to traditional nanoparticle pastes. This study introduces the use of complex silver (Ag) inks applied via industrial screen-printing for silicon heterojunction (SHJ) solar cell metallization. The printed Ag lines exhibit a contact resistivity on SHJ tin-doped indium oxide (ITO) surfaces as low as approximately 0.2-12 mO cm2. Photoluminescence imaging reveals minimal surface passivation degradation (iVoc < 3.5 mV), while scanning electron microscopy (SEM) shows a denser structure compared to Ag layer from nanoparticle pastes. The printed Ag grid features thin (approximately 1 micrometer), continuous fingers approximately 100-120 micrometer wide, significantly thinner than conventional approximately 20-30 micrometer fingers produced with nanoparticle-based pastes. Double printing achieves SHJ device efficiencies exceeding 20%, the highest reported for industrial solar cell precursors using this technology. These findings highlight the potential of complex Ag inks as a sustainable alternative to particle-based pastes, reducing Ag consumption and processing temperatures without compromising efficiency.
Large-Scale Synthesis of Semiconducting Cu(In,Ga)Se2 Nanoparticles for Screen Printing Application
During the last few decades, the interest over chalcopyrite and related photovoltaics has been growing due the outstanding structural and electrical properties of the thin-film Cu(In,Ga)Se2 photoabsorber. More recently, thin film deposition through solution processing has gained increasing attention from the industry, due to the potential low-cost and high-throughput production. To this end, the elimination of the selenization procedure in the synthesis of Cu(In,Ga)Se2 nanoparticles with following dispersion into ink formulations for printing/coating deposition processes are of high relevance. However, most of the reported syntheses procedures give access to tetragonal chalcopyrite Cu(In,Ga)Se2 nanoparticles, whereas methods to obtain other structures are scarce. Herein, we report a large-scale synthesis of high-quality Cu(In,Ga)Se2 nanoparticles with wurtzite hexagonal structure, with sizes of 10–70 nm, wide absorption in visible to near-infrared regions, and [Cu]/[In + Ga] ≈ 0.8 and [Ga]/[Ga + In] ≈ 0.3 metal ratios. The inclusion of the synthesized NPs into a water-based ink formulation for screen printing deposition results in thin films with homogenous thickness of ≈4.5 µm, paving the way towards environmentally friendly roll-to-roll production of photovoltaic systems.