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Results for “Screened coulomb interaction”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Plasma-screening effects on the electron-impact excitation of hydrogenic ions in dense plasmas

Plasma-screening effects are investigated on electron-impact excitation of hydrogenic ions in dense plasmas. Scaled cross sections Z(exp 4) sigma for 1s yields 2s and 1s yields 2p are obtained for a Debye-Hueckel model of the screened Coulomb interaction. Ground and excited bound wave functions are modified in the screened Coulomb potential (Debye-Hueckel model) using the Ritz variation method. The resulting atomic wave functions and their eigenenergies agree well with the numerical and high-order perturbation theory calculations for the interesting domain of the Debye length not less than 10. The Born approximation is used to describe the continuum states of the projectile electron. Plasma screening effects on the atomic electrons cannot be neglected in the high-density cases. Including these effects, the cross sections are appreciably increased for 1s yields 2s transitions and decreased for 1s yields 2p transitions.

Jung, Young-Dae↗
NASA NTRS1995

Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

In this paper, calculations of the hole initiated interband impact ionization rate in bulk silicon and GaAs are presented based on an ensemble Monte Carlo simulation with the inclusion of a wave-vector-dependent numerical transition rate formulation. The ionization transition rate is determined for each of the three valence bands, heavy, light, and split-off, using Fermi's golden rule with a two-body, screened Coulomb interaction. The dielectric function used within the calculation is assumed to be wave-vector-dependent. Calculations of the field-dependent impact ionization rate as well as the quantum yield are presented. It is found from both the quantum yield results and examination of the hole distribution function that the effective threshold energy for hole initiated impact ionization is relatively soft, similar to that predicted for the corresponding electron initiated ionization events occur more frequently than either heavy or split-offf initiated ionization events in bulk silicon over the applied electric field strengths examined here, 250-500 kV/cm. Conversely,in GaAs, the vast majority of hole initated ionization events originate from holes within the split-off band.

Oguzman, Ismail H.↗
NASA NTRS1995

Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate formulation

The hole initiated impact ionization rate in bulk silicon and GaAs is calculated using a numerical formulation of the impact ionization transition rate incorporated into an ensemble Monte Carlo simulation. The transition rate is calculated from Fermi's golden rule using a two-body screened Coulomb interaction including a wavevector dependent dielectric function. It is found that the effective threshold for hole initiated ionization is relatively soft in both materials, that the split-off band dominates the ionization process in GaAs. and that no clear dominance by any one band is observed in silicon, though the rate out of the light hole band is greatest.

Oguzman, Ismail H.↗
NASA NTRS1994

Semiclassical Study of the Wave Vector Dependence of the Interband Impact Ionization Rate in Bulk Silicon

We present calculations of the interband impact ionization rate calculated using a wave vector dependent (k-dependent) semiclassical formulation of the transition rate. The transition rate is determined using Fermi's golden rule from a two-body screened Coulomb interaction assuming energy and momentum conservation. The transition rate is calculated for the first two conduction bands of silicon by numerically integrating over the full Brillouin zone. The overlap integrals in the expression for the transition rate are determined numerically using a 15 band k-p calculation. It is found that the transition rate depends strongly on the initiating electron wave vector (k vector) and that the transition rate is greatest for electrons originating within the second conduction band than the first conduction band. An ensemble Monte Carlo simulation, which includes the numerically determined ionization transition rate as well as the full details of the first two conduction bands, is used to calculate the total impact ionization rate in bulk silicon. Good agreement with the experimentally determined electron ionization rate data is obtained.

Wang, Yang↗
NASA NTRSDate not supplied

Downfolding Complex Materials Problems Onto Model Hamiltonians for Quantum Computers

Simulating the properties of quantum materials is expected to be one of the exciting applications for quantum computers and where we hope to see advantages over classical hardware. The complexity of ab initio Hamiltonians describing the physics of application-relevant materials places them beyond the realm of possibility for solution on near-term hardware with a limited number of qubits. Various Hamiltonian approximations, including Hamiltonian downfolding, offers a possibility towards simulating complex materials on near-term hardware. This is accomplished by approximating the relevant physics of a given material through their representation by simpler model Hamiltonians, such as the Hubbard Hamiltonian or extensions of it. Here we employ a well-defined first-principles methodology for deriving downfolded multi-band extended Hubbard Hamiltonians of materials, capturing strong electronic correlation and electron-phonon coupling, based on the formalism of Wannier functions and the calculation of the screened Coulomb interaction. We demonstrate for a variety of systems that quantum simulation of these downfolded Hamiltonians reproduces key properties, thus establishing downfolding as a promising route to achieve near-term simulation of application-relevant systems on quantum hardware.

Antonios Markos Alvertis↗
NASA NTRSDate not supplied

Downfolding complex materials problems onto model Hamiltonians for quantum computers

Simulating the properties of quantum materials is expected to be one of the exciting applications for quantum computers and where we hope to see advantages over classical hardware. The complexity of ab initio Hamiltonians describing the physics of application-relevant materials places them beyond the realm of possibility for solution on near-term hardware with a limited number of qubits. Various Hamiltonian approximations, including Hamiltonian downfolding, offers a possibility towards simulating complex materials on near-term hardware. This is accomplished by approximating the relevant physics of a given material through their representation by simpler model Hamiltonians, such as the Hubbard Hamiltonian or extensions of it. Here we employ a well-defined first-principles methodology for deriving downfolded multi-band extended Hubbard Hamiltonians of materials, capturing strong electronic correlation and electron-phonon coupling, based on the formalism of Wannier functions and the calculation of the screened Coulomb interaction. We demonstrate for a variety of systems that quantum simulation of these downfolded Hamiltonians reproduces key properties, thus establishing downfolding as a promising route to achieve near-term simulation of application-relevant systems on quantum hardware.

Antonios M. Alvertis↗
NASA NTRS2007

Doubly Excited Resonances in the Positronium Negative Ion

The recent theoretical studies on the doubly excited states of the Ps' ion are described. The results obtained by using the method of complex coordinate rotation show that the three-lepton system behaves very much like an XYX tri-atomic molecule. Furthermore, the recent investigation on the positronium negative ion embedded in Debye plasma environments is discussed. The problem is modeled by the use of a screened Coulomb potential to represent the interaction between the charge particles.

Ho, Y.K.↗
NASA NTRS1984

Theoretical study of miscibility and glass-forming trends in mixtures of polystyrene spheres

A theoretical study of glass-forming trends and miscibility in mixtures of polystyrene spheres (polyballs) of different diameters, suspended in an aqueous solution, is presented. The polyballs are assumed to be charged and to interact via a Debye-Hueckel screened Coulomb potential. The Helmholtz free energy is calculated from a variational principle based on the Gibbs-Bogoliubov inequality, in which a mixture of hard spheres of different diameters is chosen as the reference system. It is found that when the charges of the two types of polyballs are sufficiently different, the variationally determined ratio of hard-sphere diameters differs substantially, leading to packing difficulties characteristic of glass formation. The experimentally observed range of glass formation corresponds to a ratio of hard-sphere diameters of 0.8 or less. Calculations of the free energy as a function of concentration indicate that the liquid polyball mixture is stable against the phase separation, even for widely different polyball charges.

Shih, W.-H.↗
NASA NTRS1990

Linear mixing rule in screened binary ionic mixtures

The validity of the linear mixing rule is examined for the following two cases (1) when the response of the electron gas is taken into account in the effective ionic interaction and (2) when finite-temperature effects are included in the dielectric response of the electrons, i.e., when the ions interact with both temperature- and density-dependent screened Coulomb potentials. It is found that the linear mixing rule remains valid when the electron response is taken into account in the interionic potential at any density, even though the departure from linearity can reach a few percent for the asymmetric mixtures in the region of weak degeneracy for the electron gas. A physical explanation of this behavior is proposed which is based on a simple additional length scale.

Chabrier, G.↗
NASA NTRS2005

Pressure Dependence of Insulator-Insulator Contact Charging

The mechanism of insulator-insulator triboelectric (contact) charging is being studied by the Electrostatics and Surface Physics Laboratory at KSC. The hypothesis that surface ion exchange is the primary mechanism is being tested experimentally. A two-phase model based on a small partial pressure of singly charged ions in an ambient ideal gas in equilibrium with a submonolayer adsorbed film will provide predictions about charging as a function Of ion mass, pressure, temperature, and surface adsorption energy. Interactions between ions will be considered in terms of coulombic and screened potential energies. This work is yielding better understanding of the triboelectrification of insulators, which is an important problem in. space exploration technology. The work is also relevant to important industrial processes such as xerography and the application of paints and coatings. Determining a better understanding of the fundamental mechanism of insulator-insulator triboelectrification will hopefully lead to better means of eliminating or at least mitigating its hazards and enhancing its useful applications.

Hogue, Michael D.↗
NASA NTRS1986

Nonlocal screening in metal surfaces

Due to the effect of the nonuniform environment on the static screening of the Coulomb potential, the local-density approximation for the particle-hole interaction is found to be inadequate to determine the surface energy of simple metals. Use of the same set of single-particle states, and thus the same one-body density and the same work function, has eliminated the single-electron states in favor of the structure of the short-ranged correlations as the basis of this effect. A posteriori simplifications of the Fermi hypernetted-chain theory may be found to allow the same calculational accuracy with simpler computational tools.

Krotscheck, E.↗
NASA NTRS1979

Stark-profile calculations for Lyman-series lines of one-electron ions in dense plasmas

The frequency distributions of the first six Lyman lines of hydrogenlike carbon, oxygen, neon, magnesium, aluminum, and silicon ions broadened by the local fields of both ions and electrons are calculated for dense plasmas. The electron collisions are treated by an impact theory allowing (approximately) for level splittings caused by the ion fields, finite duration of the collisions, and screening of the electron fields. These calculations are fully quantum mechanical and include the full Coulomb interaction. Ion effects are calculated in the quasistatic, linear-Stark-effect approximation, using distribution functions of Hooper and Tighe which include correlation and shielding effects. Theoretical uncertainties from the various approximations are estimated, and the scaling of the profiles with density, temperature, and nuclear charge is discussed. A correction for the effects caused by low-frequency field fluctuations is suggested.

Griem, H. R.↗
NASA NTRS2020

Nuclear Fusion Reactions in Deuterated Metals

Nuclear fusion reactions of D-D are examined in an environment comprised of high density cold fuel embedded in metal lattices in which a small fuel portion is activated by hot neutrons. Such an environment provides for enhanced screening of the Coulomb barrier due to conduction and shell electrons of the metal lattice, or by plasma induced by ionizing radiation (γ quanta). We show that neutrons are far more efficient than energetic charged particles, such as light particles (e−, e+) or heavy particles (p, d, α) in transferring kinetic energy to fuel nuclei (D) to initiate fusion processes. It is well-known that screening increases the probability of tunneling through the Coulomb barrier. Electron screening also significantly increases the probability of large- versus small-angle Coulomb scattering of the reacting nuclei to enable subsequent nuclear reactions via tunneling. This probability is incorporated into the astrophysical factor S(E). Aspects of screening effects to enable calculation of nuclear reaction rates are also evaluated, including Coulomb scattering and localized heating of the cold fuel, primary D-D reactions, and subsequent reactions with both the fuel and the lattice nuclei. The effect of screening for enhancement of the total nuclear reaction rate is a function of multiple parameters including fuel temperature and the relative scattering probability between the fuel and lattice metal nuclei. Screening also significantly increases the probability of interaction between hot fuel and lattice nuclei increasing the likelilhood of Oppenheimer-Phillips processes opening a potential route to reaction multiplication. We demonstrate that the screened Coulomb potential of the target ion is determined by the nonlinear Vlasov potential and not by the Debye potential. In general, the effect of screening becomes important at low kinetic energy of the projectile. We examine the range of applicability of both the analytical and asymptotic expressions for the well-known electron screening lattice potential energy Ue, which is valid only for E >> Ue (E is the energy in the center of mass reference frame). We demonstrate that for E ≤ Ue, a direct calculation of Gamow factor for screened Coulomb potential is required to avoid unreasonably high values of the enhancement factor f (E) by the analytical—and more so by the asymptotic—formulas.

Vladimir Pines↗
NASA NTRS1988

The equation of state for stellar envelopes. I - An occupation probability formalism for the truncation of internal partition functions

An equation of state for material in stellar envelopes, subject to the limits of temperature less than about 10 to the 7th K and density less than about .01 g/cu cm is presented. The equation makes it possible to express free energy as the sum of several terms representing effects such as partial degeneracy of the electron, Coulomb interactions among charged particles, finite-volume, hard sphere repulsion, and van der Waals attraction. An occupation probability formalism is used to represent the effects of the plasma in establishing a finite partition function. It is shown that the use of the static screened Coulomb potential to calculate level shifts and to estimate the cutoff of the internal partition function is invalid. For most of the parameter space relevant to stellar envelopes, perturbations arising from the plasma ions are shown to be dominant in establishing the internal partition function.

Hummer, D. G.↗
NASA NTRS2008

Discrete Element Modeling of Triboelectrically Charged Particles

Tribocharging of particles is common in many processes including fine powder handling and mixing, printer toner transport and dust extraction. In a lunar environment with its high vacuum and lack of water, electrostatic forces are an important factor to consider when designing and operating equipment. Dust mitigation and management is critical to safe and predictable performance of people and equipment. The extreme nature of lunar conditions makes it difficult and costly to carry out experiments on earth which are necessary to better understand how particles gather and transfer charge between each other and with equipment surfaces. DEM (Discrete Element Modeling) provides an excellent virtual laboratory for studying tribocharging of particles as well as for design of devices for dust mitigation and for other purposes related to handling and processing of lunar regolith. Theoretical and experimental work has been performed pursuant to incorporating screened Coulombic electrostatic forces into EDEM, a commercial DEM software package. The DEM software is used to model the trajectories of large numbers of particles for industrial particulate handling and processing applications and can be coupled with other solvers and numerical models to calculate particle interaction with surrounding media and force fields. While simple Coulombic force between two particles is well understood, its operation in an ensemble of particles is more complex. When the tribocharging of particles and surfaces due to frictional contact is also considered, it is necessary to consider longer range of interaction of particles in response to electrostatic charging. The standard DEM algorithm accounts for particle mechanical properties and inertia as a function of particle shape and mass. If fluid drag is neglected, then particle dynamics are governed by contact between particles, between particles and equipment surfaces and gravity forces. Consideration of particle charge and any tribocharging and electric field effects requires calculation of the forces due to these effects.

Hogue, Michael D.↗