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A review of the application of 2D isotropic-anisotropic correlation NMR spectroscopy in structural studies of chalcogenide glasses

The application of solid-state high-resolution NMR spectroscopy in the structural investigation of chalcogenide glasses in Ge/As/P/Si-X (X = S, Se,Te) systems has remained challenging even for the spin-1/2 nuclides ( 29 Si, 31 P, 77 Se, 125 Te), owing to their low natural abundance (except for 31 P), slow spin-lattice relaxation rate and large CSA and chemical shift distribution induced line broadening effects. However, most of these deleterious effects can be successfully overcome in two-dimensional (2D) isotropic-anisotropic correlation NMR experiments, especially when performed at high magnetic field and in conjunction with the Car-Purcell-Meiboom-Gill (CPMG) echo train acquisition. Here, we present a short introduction to the basic principles of such experiments and review their applications over the last decade in deciphering various short- and intermediate- range structural characteristics of chalcogenide glasses in S-Se, Se-Te, Ge-Se, As-Se and Si-Se systems as well as in investigating the molecular dynamics in a P-Se supercooled liquid. We anticipate possible future applications of these 2D isotropic-anisotropic correlation NMR experiments, particularly in conjunction with density functional theory-based calculations of NMR chemical shift tensor parameters and additional signal enhancement schemes, in addressing complex structural correlations and distributions in chalcogenide glasses.

2D NMR↗

Optimization of Annealing for WZ-Phase Removal and Densification in Sb-Doped CdSexTe1-x Solar Cells

The impact of high temperature annealing (HTA) treatments on the performance of Sb-doped CdSeTe solar cells containing a CdSe0.25Te0.75/CdTe front stack and a vapor transport (VT) deposited CdTe:Sb absorber was studied. The HTA treatment of the thermally evaporated CdSe0.25Te0.75/CdTe front stack converts the mixed-phase film into a single zinc blende structure through recrystallization of the photo-inactive wurtzite phase. Subsequently, HTA treatment of the full device stack after vapor transport deposition of CdTe:Sb absorber promotes Se-Te intermixing, reduces voids, densifies the full stack and enhances CdTe:Sb grain growth. Comprehensive characterizations revealed that the combined HTA treatments significantly improved film crystallinity, removed the WZ phase in the front stack, enhanced full-stack densification, reduced defect densities, and enhanced carrier dynamics. With HTA treatments, the open-circuit voltage (VOC) of CdSeTe:Sb devices increased from ~ 400 mV to >= 600 mV, and when combined with optimized CdCl2 treatment, VOC reached 849 mV. The net carrier concentrations (NA-ND) of representative devices were NA-ND = 1.5 x 10^15, 1.1 x 10^15, and 3.5 x 10^14 cm-3 for the no-HTA, moderate-HTA, and optimized high-VOC conditions, respectively. Since the highest VOC corresponds to the lowest apparent NA-ND, , which is similar to a Cu-doped-only CdSeTe solar cell (NA-ND ~= 2 x 10^14 cm-3), the data indicate that improved device performance does not result from increased electrically active Sb; instead, it points to structural improvement as the dominant effect of HTA. The findings demonstrate the potential of HTA treatments to improve the structural and electrical properties of CdSeXTe1-X solar cells.

14 SOLAR ENERGY↗

Nanometer-scale electrical potential imaging on absorber of CdSeTe solar cells

Here, we report on nm-scale electrical potential imaging throughout As-doped and Cu-doped CdSeTe absorbers using Kelvin probe force microscopy (KPFM). The potential imaging was conducted both laterally and vertically on beveled films using ion milling at small glancing angle. KPFM images electrical potential on the beveled surface and assesses defect charging in the subsurface region within a screening length from the beveled surface. We found that the grain boundaries were positively charged and that there were significant potential fluctuations in both grain boundary versus grain interior and intragrain. We further found that these potential fluctuations decreased significantly toward the front interface. Time of flight secondary ion mass spectrometry imaging shows that Se content increased toward the front interface, consistent with Se passivation of defects. The potential fluctuation was induced by defect charging, and the results elucidate different details of the defect configurations and grain structures of the films with different CdCl 2 treatment temperatures in the As-doped CdSeTe. The defect configurations in the region near the front interface can be a main factor contributing to the device performance difference. Our potential imaging provides insights about the defects throughout the absorber films, and shows that the potential fluctuation has a direct correlation to the V oc deficit.

14 SOLAR ENERGY↗

Materials Data on TeSe2 by Materials Project

TeSe2 is Calaverite structured and crystallizes in the monoclinic C2 space group. The structure is two-dimensional and consists of one TeSe2 sheet oriented in the (0, 0, 1) direction. Te4+ is bonded in a 6-coordinate geometry to six equivalent Se2- atoms. There are a spread of Te–Se bond distances ranging from 2.62–3.51 Å. Se2- is bonded in a 1-coordinate geometry to three equivalent Te4+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on TeSe by Materials Project

TeSe crystallizes in the triclinic P1 space group. The structure is zero-dimensional and consists of one TeSe cluster. there are three inequivalent Te sites. In the first Te site, Te is bonded in a distorted single-bond geometry to one Se atom. The Te–Se bond length is 2.67 Å. In the second Te site, Te is bonded in a distorted single-bond geometry to one Se atom. The Te–Se bond length is 2.65 Å. In the third Te site, Te is bonded in a water-like geometry to two Se atoms. There are one shorter (2.62 Å) and one longer (2.64 Å) Te–Se bond lengths. There are three inequivalent Se sites. In the first Se site, Se is bonded in a distorted water-like geometry to one Te and one Se atom. The Se–Se bond length is 2.45 Å. In the second Se site, Se is bonded in a water-like geometry to two Te atoms. In the third Se site, Se is bonded in a distorted water-like geometry to one Te and one Se atom.

36 MATERIALS SCIENCE↗