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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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18 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Impact of K-factor on Short Circuit Program Convergence for Inverter-Based Resources during Faults

Classical short-circuit programs that linearize the power network are no longer applicable for inverter based resources (IBRs), necessitating an iterative approach. Phasor domain programs can model the IBRs using an iterative approach considering nonlinear fault responses. In phasor domain models, the IBR can be modeled as a voltage controlled current source (VCCS) in tabular form with positive, negative, and zero sequence information for balanced and unbalance short-circuit faults. In the VCCS modeling of the IBR, positive and negative incremental reactive current, also known as the k-factor, plays an important role in short circuit program convergence. In this work, a few approaches: conventional VCCS modeling with a k-factor of 2, conventional VCCS modeling with a k-factor of 2 with modified pre-fault voltages, VCCS characteristics based on the power flow solution with a k-factor of 2, and VCCS characteristics based on the power flow solution with a k-factor of 1 are investigated for short circuit program convergence under higher IBR penetration. The IEEE 39 bus New England Test System is taken as the test system, and simulations are carried out in PSS®CAPE 15.0.26 simulation software. Simulation results demonstrate that IBR penetration is higher for the VCCS model, which corresponds to the power flow solution with k-factor 1, compared to other approaches.

42 ENGINEERING↗
DOE OSTI2024

Assessing Inverter-Based Resources Modeling Gaps in Commonly Used Short-Circuit Programs

Future bulk power systems are expected to operate with a high penetration of inverter-based resources (IBR). This is anticipated to fundamentally change the system’s short-circuit behaviors and demand a change in existing transmission line protection settings or schemes. Phasor-domain short circuit programs (e.g., ASPEN, CAPE, and CYME) remain the mainstream tools for developing protection settings. However, the system protection community has shared concerns about the accuracy of IBR models in short-circuit programs. This report compares the performance of existing generic IBR models in short-circuit programs with detailed electro-magnetic transient (EMT) models provided by several different IBR manufacturers in PSCAD, to quantify the short-circuit program’s IBR model accuracy, assess their ability to replicate individual IBR controls such as negative sequence current injections, and identify specific gaps in the existing generic phasor-domain IBR models that are currently available.

42 ENGINEERING↗
DOE OSTI2026

A Sensitivity-driven Wide Area Protection (SWAP) Coordination Tool for High Penetration of Inverter-based Resources (IBR)

Traditionally, power system generation sources have been composed of synchronous generators, of which the fault current behavior is understood with minimal differences between generation size and types due to the physics of their construction. Present protection schemes and modeling methods are based upon these understood characteristics. Most renewable generation is composed of inverter-based resources (IBR), in which fault current is determined by switching control software and hardware limitations, each of which can vary between manufacturers and even between models of the same manufacturer. The resulting fault current is low in magnitude, low in negative-sequence current, unpredictable phase angles, and is a challenge to model. These characteristics also result in a challenge to traditional protection schemes and fault simulation software. To address several of these concerns, the project has the following goals: 1. Improve IBR models: Improve IBR models used in short circuit (SC) programs to accurately capture the response of IBRs at the bulk power system (BPS) level for fault and protection studies. 2. Develop automation tool: Develop an automation tool that allows engineers to identify protection coordination and sensitivity issues by performing SC and protection coordination studies in a high IBR-penetrated grid by applying variations to the IBR models, faults, contingencies, etc. 3. Develop schemes: Develop new protection mitigation solution schemes that complement the existing protection systems to ensure safe operation of the BPS with higher IBR penetration levels. The project team did not achieve this final goal, as the Department of Energy (DOE) stopped the project early due to changes in DOE funding priorities. The termination notice came at the beginning of the final project phase, while the team was identifying and beginning to investigate protection issues. It should be noted that the team discussed a 100% penetration scenario. However, this scenario would require the use of grid-forming IBR models that are not presently available. Since developing these models requires additional effort, the 100% penetration scenario was not pursued during this project. In the future, developing the methodology and models for the 100% scenario could benefit the industry.

14 SOLAR ENERGY↗
DOE OSTI2022

Detection of an internal short circuit in a battery

An electrical device comprises a battery cell; a pressure sensor for measuring swelling forces of the battery cell, optionally with voltage, temperature and current sensors, and a battery management system including a controller. The controller executes a program to: (i) determine a reference swelling force corresponding to a reference electrical signal received from the pressure sensor at an earlier reference time, (ii) determine a second swelling force corresponding to a second electrical signal received from the pressure sensor at a later second time, and (iii) determine whether a risk of internal short circuit of the battery cell exists by comparing a reference level of the reference electrical signal and a signal representative of the second electrical signal. When the signal representative of the second electrical signal exceeds the reference level of the reference electrical signal by a threshold amount, a risk of internal short circuit of the cell exists.

Stefanopoulou, Anna G.↗
DOE OSTI2023

A Pulse Generation Framework with Augmented Program-aware Basis Gates and Criticality Analysis

Near-term intermediate scale quantum (NISQ) de- vices are subject to considerable noise and short coherence time. Consequently, it is critical to minimize circuit execution latency. Traditionally, each basis gate of a transpiled circuit is decoded into a fixed episode of the device control pulses. Recently, people started to investigate merged pulse generation for customized gates through quantum optimal control (QOC). However, existing QOC approaches face the challenges of (i) restricted search space due to prohibitive compilation overhead; (ii) suboptimal end-to-end performance due to aggressive local optimization and falsely introduced dependency among the customized gates; (iii) inadequate adaptivity towards system calibration, which is critical for NISQ devices. In this work, we propose PAQOC, a novel QOC framework that can (i) automatically detect frequently encountered gate patterns in the logical circuit by modeling the problem as a subgraph mining process and reuse these patterns to enable much larger search space exploration (i.e., program aware); (ii) systemically construct customized gate-set based on the impact to the overall program latency (i.e., criticality-aware); and (iii) quickly adapt to system re-calibration thanks to the small-scale pattern-based gate generation (i.e., adaptivity-aware). PAQOC achieves a good tradeoff between circuit performance and compilation time, allowing fully automatic, single stop, ad- hoc customized pulse generation for more efficient execution of user programs on NISQ devices. Evaluations using fifteen applications show that PAQOC can achieve on average 1.95× speedup of the circuit latency and achieve on average 36.7% reduction in compilation overhead. With PAQOC, circuits can run faster with reduced noise, allowing deeper circuits to be tested within the coherence time of present NISQ platforms.

Chen, Yanhao↗
DOE OSTI2023

Short-Depth QAOA circuits and Quantum Annealing on Higher-Order Ising Models (Rev.2)

The Quantum Alternating Operator Ansatz (QAOA) and Quantum Annealing (QA) are quantum algorithms that are both based on the adiabatic theorem and both have the goal of sampling the optimal solution(s) of combinatorial optimization problems. Quantum annealing has been physically instantiated on D-Wave devices using superconducting flux qubits, and QAOA can be programmed on digital gate-model quantum computers such as the programmable superconducting transmon qubits devices of the IBMQ series, for instance ibm washington. QAOA and QA address the same types of problems, but it is unclear how they will scale to large problem sizes and to larger and higher-fidelity quantum computers. In this article, we present a direct comparison between QAOA, one and two rounds, run on all 127 qubits of ibm washington and QA run on D-Wave Advantage system4.1 and Advantage system6.1. The problems which allow for this comparison are random Ising model problems whose connectivity matches the heavy hexagonal lattice topology of ibm washington and the Pegasus graph connectivity of the two D-Wave devices. We create two classes of problem instances for this comparison: one with higher order terms (ZZZ variable interactions), linear terms, and quadratic terms, and a separate problem type with only linear and quadratic terms. Our QAOA circuits are novel and extremely short depth, with a CNOT depth of 6 per round, which allows whole chip usage of ibm washington’s heavy hexagonal lattice and can be applied to future heavy-hex chips. We also test the effectiveness of the error suppression technique digital dynamical decoupling on the QAOA circuits. The QAOA circuits compiled to ibm washington are composed of several thousand circuit instructions, approximately 3, 000 depending on the details of the circuit, making these some the largest quantum circuits ever executed on a digital quantum processor. QAOA and QA are compared against the classical heuristic algorithm of simulated annealing and all problem instances are exactly solved using CPLEX in order to evaluate which samplers, if any, correctly found the ground state solution(s) of the problem instances. We find that (i) QA outperforms QAOA on all problem instances, (ii) QAOA samples the problems better than random sampling, and (iii) QAOA angle computation exhibits clear parameter concentration across the ensemble of Ising models.

127 Qubits↗
DOE OSTI2021

Superconducting Radio Frequency Resonators for Quantum Computing: A Short Review

Superconducting radiofrequency (SRF) technology is being used not only in discovery science programs and basic research but also for several applications that benefit society more directly. The advantage of superconducting resonators over those made of normal-conducting metal is their ability to store electromagnetic energy with much lower dissipation. The high-quality factor and longer dissipation time provided by these superconducting resonators can deliver superior performance. Currently, the quantum processing architecture uses resonators and interconnecting circuits operating in the microwave regime with superconducting strip-line technology and low noise electronic devices for switching and communication. The performance of these devices can be enhanced by embedding them in 3D SRF cavity resonators to prolong the coherence time, which improves the utility of the device by reducing error rates and allowing more manipulations (calculations) before the quantum state decays. Here, we present a short review of current microwave technology used in quantum computers and progress towards the 3D resonators to enhance thecoherence time.

Dhakal, Pashupati↗
DOE OSTI2020

AGC-4 Experiment Irradiation Monitoring Data Qualification Final Report

The Graphite Technology Development Program ran a series of six experiments to quantify the effects of irradiation on nuclear grade graphite. This report focuses on the fourth experiment, Advanced Graphite Creep 4 (AGC 4). The Advanced Reactor Development (ARD) Technology Development Office (TDO) Program for research and development activities require documentation of qualified monitoring data to design and license the first high-temperature reactor nuclear plant. Qualified data meets the requirements for use as described in the experiment planning and quality assurance documents. Failed data do not meet the requirements and provide no useable information. Trend data may not meet all requirements but still provide some useable information. Use of Trend data requires assessment of how any deficiencies affect a particular use of the data. AGC-4 began with Advanced Test Reactor (ATR) Cycle 157D on May 30, 2015. After irradiating the graphite for two cycles, the capsule was removed from the reactor after ATR Cycle 158A, which ended on January 2, 2016, due to interference with another experiment. Irradiation was resumed with Cycle 162A on October 7, 2017 after the interfering experiment was removed from the reactor. AGC-4 irradiation completed by the end of Cycle 166B on January 10, 2020. Between Cycles 162A and 166B, AGC-4 capsule was removed from the reactor core during two Powered Axial Locator Mechanism (PALM) Cycles 163A and 165A to avoid overheating. All thermocouples (TCs) have functioned throughout the AGC-4 experiment. A total of 9,256,184 out of all 11,167,213 temperature records (or 82.9%) are Qualified for use by the ARD Program and 1,911,029 missing values are Failed. Argon, helium, and total gas flow data were within expected ranges, except only eight out-of-range values occurred during outages. A total of 21,240,627 out of all 22,288,5103 gas flow rates (or 92.8%) are Qualified for use by the ARD Program and 1,644,476 are Failed records mostly due to missing values. Discharge gas line moisture values were consistently low during full ATR power, except for 162B, when moisture content was increasing to more than 200 ppmv by the end of this cycle. During outages, moisture content reached as high as 700 ppmv. 1,089,941 out of a total of 1,107,331 moisture values (or 98.4%) are within the measurement range of the instrument and are Qualified for use by the ARD Program and 17,390 missing moisture values are Failed. Graphite creep specimens were subjected to one of three loads: 393, 491, or 589 lbf. For a brief period during Cycle 157D between 12:19 on June 2, 2015, and 08:23 on June 11, 2015, the load cells were wired incorrectly, resulting in missing stack load data. Missing stack loads were estimated from measured ram pressures using regression equations developed from the existing data from Cycle 157D. Estimated stack loads during this period are considered to be an accurate representation of actual load applied to the stacks. These loads deviate slightly from the planned loads. This deviation does not prevent the data from being Qualified for use but must be taken into account when analyzing the effect of load on creep. 6,095,728 out of a total of 6,403,985 moisture values (or 95.2%) are within the measurement range of the instrument and are Qualified for use by the ARD Program and 308,257 missing load values are Failed. Stack displacement increased consistently throughout the eight cycles, with total displacement reached highest value of 2.4 in by the end of irradiation. During ATR outages, a set of pneumatic rams raised the stacks of graphite creep specimens to ensure the specimens were not stuck within the test train. This stack raising was performed seven times throughout irradiation. All stacks were raised successfully each time. 4,744,974 out of a total of 6,094,513 displacement values (or 77.9%) are within the measurement range of the instrument and are Qualified for use by the ARD Program and 1,349,539 displacement values are Failed mostly due to missing values. Analyses were conducted on correlations between TCs to look for trends and step changes that might indicate instrument degradation or failure. Correlation analysis was used to identify instances when TCs form short circuits, referred to as virtual junctions, which result in TCs reporting temperatures from some location in the capsule other than the location where they were intended to read. No evidence of virtual junctions was found. Analyses were also conducted on control charts of temperature differences of between two TCs, which are expected to behave consistently throughout the entire irradiation period. Upward or downward trend over time indicates at least one TC in the pair was drifted. Examining control charts for all 66 possible pairs out of twelve TCs installed in the AGC-4 capsules reveal no clear drift failures occurred, except unstable behavior of two TCs in Zone 3, TC-7 and TC-8, over irradiation time. In conclus

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

High-Frequency Signature-Based Fault Detection for Future MV Distribution Grids: Preprint

Increased deployment of Distributed Energy Resources (DERs) and microgrids are significantly changing the operation of distribution grid. Increasing penetration of power electronics based DERs also raise several operational problems such as protection coordination issues, voltage raise, recloser synchronization, stability, and frequency control. Legacy systems are designed for unidirectional power flow. Bidirectional power flows, and varying short circuit levels are some of the major challenges in implementing these legacy protection schemes for future power grid with high penetration of power electronics based DERs. Inverter based DER’s can contribute to a maximum of 2 p.u. fault current. Interconnection standards might require even lower fault current contribution. If these protection related challenges are not addressed, it will result in limiting the penetration of DERs in distribution feeders. In this paper, the feasibility of high frequency signature generated by transients is evaluated to identify and locate faults in a distribution system. The paper will discuss the need for an accurate line modeling approach to accurately capture the high frequency signatures. These high frequency signatures are naturally occurring electromagnetic transients for events such as switching events in the network, faults events, etc. This is different than that implemented in transmission systems as the proposed approach utilizes advanced signal processing techniques to retrieve valuable information from the high frequency signatures generated during faults and does not just rely on time delay measurements between reflections of the high frequency signals. In the full paper, information of a modified IEEE distribution feeder test system to accurately model the high frequency signatures will be provided. The distribution lines will be modeled using universal line modeling (ULM) technique in an electromagnetic transients program (EMTP) modeling platform. Different test cases will be simulated and these test cases will include different fault types, multiple fault locations, capacitor bank switching, etc. The feeder system modeled for these simulations will also include power electronics based DERs. Additionally, experimental results demonstrating the high frequency signatures generated due to a transient event in a medium voltage (13.8 kV) distribution line will also be presented in the full paper. Furthermore, the analysis combined with simulation and experimental results in the full paper will help demonstrate the feasibility and efficacy of the proposed protection scheme. The developed protection scheme will not just help solve problems generated by bidirectional current flow, varying short-circuit current capacity, but also help in proliferation of DERs in distribution systems.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

Advancing PV material performance using nanoscale opto-electrical characterization

The purpose of this program was to improve the efficiency of photovoltaics by characterizing their optoelectronic properties at the nanoscale. We investigated Copper Indium Gallium Selenide (CIGS) materials produced by Dow. We modified an atomic force microscope (AFM) to work with a highly controlled environment under controlled illumination at the probe to study the main power conversion efficiency determining parameters for photovoltaics of open circuit voltage, short circuit current, carrier lifetime and diffusion length, and band alignment at interfaces and defects with sub 10nm spatial resolution of their device materials.

14 SOLAR ENERGY↗
DOE OSTI2021

Clifford Circuit Optimization with Templates and Symbolic Pauli Gates

The Clifford group is a finite subgroup of the unitary group generated by the Hadamard, the CNOT, and the Phase gates. This group plays a prominent role in quantum error correction, randomized benchmarking protocols, and the study of entanglement. Here we consider the problem of finding a short quantum circuit implementing a given Clifford group element. Our methods aim to minimize the entangling gate count assuming all-to-all qubit connectivity. First, we consider circuit optimization based on template matching and design Clifford-specific templates that leverage the ability to factor out Pauli and SWAP gates. Second, we introduce a symbolic peephole optimization method. It works by projecting the full circuit onto a small subset of qubits and optimally recompiling the projected subcircuit via dynamic programming. CNOT gates coupling the chosen subset of qubits with the remaining qubits are expressed using symbolic Pauli gates. Software implementation of these methods finds circuits that are only 0.2% away from optimal for 6 qubits and reduces the two-qubit gate count in circuits with up to 64 qubits by 64.7% on average, compared with the Aaronson-Gottesman canonical form.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗
DOE OSTI2025

Cost of emulating a small quantum annealing problem in the circuit model

Demonstrations of quantum advantage for certain sampling problems have generated considerable excitement for quantum computing and have further spurred the development of circuit-model quantum computers, which represent quantum programs as a sequence of quantum gates acting on a finite number of qubits. Amongst this excitement, analog quantum computation has become less prominent, with the expectation that circuit-model quantum computers will eventually be sufficient for emulating analog quantum computation and thus rendering analog quantum computation obsolete. In this work we explore the basic requirements for emulating a specific analog quantum computation in the circuit model: the preparation of a biased superposition of degenerate ground states of an Ising Hamiltonian using an adiabatic evolution. We show that the overhead of emulation is substantial even for this simple problem. This supports using analog quantum computation for solving time-dependent Hamiltonian dynamics in the short term and midterm, assuming analog errors can be made low enough and coherence times long enough to solve problems of practical interest.

Quantum algorithms & computation↗
DOE OSTI2022

Nondestructive Evaluation (NDE) of Cable Anomalies using Frequency Domain Reflectometry (FDR) and Spread Spectrum Time Domain Reflectometry (SSTDR)

This report presents a comparative assessment of the performance of frequency domain reflectometry (FDR) and spread spectrum time domain reflectometry (SSTDR) in detecting a wide range of electrical cable anomalies. All tests and results reported herein were performed at the PNNL Accelerated and Real-Time Environmental Nodal Assessment (ARENA) cable and motor test bed. The primary objective of this work was to evaluate the effectiveness of SSTDR, a fledgling cable monitoring technique that shows promise for application in online monitoring of energized cable systems, against FDR, an offline technique widely employed in the nuclear power plant (NPP) industry. FDR tests are becoming more widely used in nuclear power plant cable aging management and test programs – particularly for low voltage cables. FDR capabilities for these kinds of tests have been reported by PNNL and others. The FDR test is performed on de-energized cables by connecting the FDR instrument to two of the cable conductors, or one conductor and the shield. A broad band low voltage (< 5 V) chirp is introduced in the cable, and any reflected response is captured in the frequency domain. The captured reflection is then processed by performing an inverse Fourier transform to a time domain response which can then be converted to a distance response based on the cable velocity of propagation (VoP). SSTDR measurements are functionally similar to FDR measurements in that a broad-band voltage signal composed of a square or sine wave modulated pseudo-random sequence of chips (< 5 volts), is injected onto one of the cable conductors. The injected signal will experience partial energy reflection and transmission at each impedance discontinuity along the transmission line. Any reflected response is detected by computing a cross-correlation between the reflected signals and a delayed copy of the incident SSTDR signal. the time delay for the reflected signal to experience the best matched correlation with the incident signal, indicates the travel time for the signal to reach a change in impedance. By knowing this time delay and velocity of propagation (VoP) of the signal, one can compute the physical distance. A big advantage that SSTDR measurements have over other methods is the ability to be connected to energized or live wires (currently up to 1kV) thereby enabling online monitoring of cables. SSTDR has been used successfully in several applications, e.g., aircraft, rail, and photovoltaic systems. In this work FDR and SSTDR cable assessment techniques were used to characterize a variety of cable anomalies and faults including: (1) Presence or absence of a motor; (2) Ground faults and short circuit faults; (3) Moist environments and water ingress faults; (4) Accelerated thermal aging. Both shielded and non-shielded cables were evaluated in this report. Offline measurements were made using FDR and online measurements were made by SSTDR for a range of test scenarios. Based on the results across all cable anomalies evaluated in this study, FDR displayed high sensitivity towards cable condition assessment, while SSTDR showed promise for future application in monitoring NPP cable systems. However, further developments are suggested to improve the resolution and sensitivity of SSTDR towards faults and anomalies in low voltage cables.rt presents a comparative

42 ENGINEERING↗
DOE OSTI2021

Overhaul and installation of the ICARUS-T600 liquid argon TPC electronics for the FNAL Short Baseline Neutrino program

The ICARUS T600 liquid argon (LAr) time projection chamber (TPC) underwent a major overhaul at CERN in 2016–2017 to prepare for the operation at FNAL in the Short Baseline Neutrino (SBN) program. This included a major upgrade of the photo-multiplier system and of the TPC wire read-out electronics. The full TPC wire read-out electronics together with the new wire biasing and interconnection scheme are described. The design of a new signal feed-through flange is also a fundamental piece of this overhaul whose major feature is the integration of all electronics components onto the signal flange. Initial functionality tests of the full TPC electronics chain installed in the T600 detector at FNAL are also described.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗