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Results for “Shubnikov-de Haas effect”

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Weak-Field Hall Resistivity and Spin-Valley Flavor Symmetry Breaking in Magic-Angle Twisted Bilayer Graphene

Near a magic twist angle, the lowest energy conduction and valence bands of bilayer graphene moiré superlattices become extremely narrow. The band dispersion that remains is sensitive to the moiré’s strain pattern, nonlocal tunneling between layers, and filling-factor-dependent Hartree and exchange band renormalizations. In this Letter, we analyze the influence of these band-structure details on the pattern of flavor symmetry breaking observed in this narrow band system and on the associated pattern of Fermi surface reconstructions revealed by weak-field Hall and Shubnikov–de Haas magnetotransport measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Shubnikov–de Haas oscillations of biaxial-strain-tuned superconductors in pulsed magnetic field up to 60 T

Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure and, for metallic 2D materials, quantum oscillations superimposed on the transport signals encode Fermi surface parameters. In this manuscript, we utilize biaxial strain as an external tuning parameter and investigate the effects of strain on the electronic properties of two quasi-2D superconductors, MoTe 2 and RbV 3 Sb 5 , by measuring their magnetoresistance in pulsed magnetic fields up to 60 T. With a careful selection of insulating substrates, we demonstrate the possibility of both the compressive and tensile biaxial strains imposed on MoTe 2 and RbV 3 Sb 5 , respectively. For both systems, the applied strain has led to superconducting critical temperature enhancement compared to their free-standing counterparts, proving the effectiveness of this biaxial strain method at cryogenic temperatures. Clear quantum oscillations in the magnetoresistance—the Shubnikov–de Haas (SdH) effect—are obtained in both samples. In strained MoTe 2 , the magnetoresistance exhibits a nearly quadratic dependence on the magnetic field and remains non-saturating even at the highest field, whereas in strained RbV 3 Sb 5 , two SdH frequencies showed a substantial enhancement in effective mass values, hinting at a possible enhancement of charge fluctuations. Our results demonstrate that combining biaxial strain and pulsed magnetic field paves the way for studying 2D materials under unprecedented conditions.

2D materials↗
DOE OSTI2023

Topological features in the ferromagnetic Weyl semimetal CeAlSi: Role of domain walls

In the ferromagnetic (FM) Weyl semimetal CeAlSi both space-inversion and time-reversal symmetries are broken. Our quantum oscillation (QO) data indicate that the FM ordering modifies the Fermi-surface topology and also leads to an unusual drop in the QO amplitude. In the FM phase, we find a pressure-induced suppression of the anomalous and the loop Hall effects. This cannot be explained based on the electronic band structure or magnetic structure, both of which are nearly pressure independent. Instead, we show that a simplified model describing the scattering of Weyl fermions off FM domain walls can potentially explain the observed topological features. Our study highlights the importance of domain walls for understanding transport in FM Weyl semimetals.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd 3 + ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. Here, we present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular-beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band-structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density-functional theory (DFT) calculations. ARPES shows a hole-carrier rich, topologically trivial, semimetallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum-well states. DFT-predicted Fermi wave vectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole-carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mapping the three-dimensional fermiology of the triangular lattice magnet EuAg 4 Sb 2

In this paper, we report the temperature-field phase diagram as well as present a comprehensive study of the electronic structure and three-dimensional fermiology of the triangular-lattice magnet EuAg 4 ⁢Sb 2 , utilizing quantum oscillation measurements, angle-resolved photoemission spectroscopy, and first-principles calculations. The complex magnetic phase diagram of EuAg 4 ⁢Sb 2 highlights many transitions through nontrivial AFM states. Shubnikov-de Haas and de Haas-van Alphen oscillations were observed in the polarized ferromagnetic state of EuAg 4 ⁢Sb 2 , revealing three pairs of distinct spin-split frequency branches with small effective masses. A comparison of the angle-dependent oscillation data with first-principles calculations in the ferromagnetic state and angle-resolved photoemission spectra shows good agreement, identifying tubular hole pockets and hourglass-shaped hole pockets at the Brillouin zone center, as well as diamond-shaped electron pockets at the zone boundary. As the temperature increases, the frequency branches of the tiny hourglass pockets evolve into a more cylindrical shape, while the larger pockets remain unchanged. This highlights that variations in exchange splitting, driven by changes in the magnetic moment, primarily impact the small Fermi pockets without significantly altering the overall band structure. As a result, this is consistent with first-principles calculations, which show minimal changes near the Fermi level across ferromagnetic and simple antiferromagnetic states or under varying on-site Coulomb repulsion.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation

The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Interplay of Kondo physics with incommensurate charge density waves in CeTe 3

CeTe 3 is a 2-dimensional (2D) Van der Waals (VdW) material with incommensurate charge density waves (CDW), extremely high transition temperature (T CDW ), and a large momentum-dependent CDW gap that leaves a significant portion of the Fermi surface intact. It is also considered to be a weak Kondo system, a property unexpected for a material with incommensurate CDW, where each atomic site is slightly different. Here, we study the properties of the CDW state in several RTe3 (R is rare earth) materials and examine the hybridization of itinerant states with the localized Ce 4f multiplet in CeTe 3 by using angle resolved photoemission spectroscopy. We find that the renormalization of the itinerant states originating from the hybridization with the deeper localized 4f states at −260 meV is k−dependent and extends to the Fermi level. As these localized states are far from the Fermi level, the observed hybridization affects the effective masses only marginally and does not lead to heavy fermions. However, since the same renormalizing mechanism normally leads to the heavy fermion physics when the localized 4f states are near the Fermi level, our observation of its strong k−dependence suggests that this could be the reason for discrepancy between the heavy masses in specific heat and light ones in Shubnikov de Haas oscillations, often observed in heavy fermions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impact of Tiny Fermi Pockets with Extremely High Mobility on the Hall Anomaly in the Kagome Metal CsV 3 ⁢Sb 5

The kagome metal CsV 3 ⁢Sb 5 exhibits an unusual charge-density-wave (CDW) order, where the emergence of loop current order that breaks time-reversal symmetry (TRS) has been proposed. A key feature of this CDW phase is a nonmonotonic Hall effect at low fields, often attributed to TRS breaking. However, its origin remains unclear. Here, we conduct comprehensive magnetotransport measurements on CsV 3 ⁢Sb 5 and, through mobility spectrum analysis, identify the formation of tiny Fermi pockets with extremely high mobility below the CDW transition. Furthermore, electron irradiation experiments reveal that the nonmonotonic Hall effect is significantly suppressed in samples with reduced mobility, despite no substantial change in the electronic structure. In conclusion, these results indicate that the nonmonotonic Hall effect originates from these tiny Fermi pockets with high mobility carriers rather than anomalous Hall mechanisms, providing new insights into understanding the Hall anomaly in this kagome system.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Thickness dependence of magnetotransport properties of tungsten ditelluride

Here we investigate the electronic structure of tungsten ditelluride (WTe 2 ) flakes with different thicknesses in magnetotransport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the “turn-on” behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe 2 and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of the Fermi surface, which reveals that multilayer WTe 2 is an electronic 3D material and the anisotropy decreases as thickness decreases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Antiferromagnetic topological insulating state in $\mathrm{Tb_{0.02}Bi_{1.08}Sb_{0.9}Te_2S}$ single crystals

Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed in magnetic-topological-insulator-based devices. Here in this work, we report a successful doping of rare earth element Tb into Bi 1.08 Sb 0.9 Te 2 S topological insulator single crystals, in which the Tb moments are antiferromagnetically ordered below ~10 K. Benefiting from the in-bulk-gap Fermi level, transport behavior dominant by the topological surface states is observed below ~150 K. At low temperatures, strong Shubnikov–de Haas oscillations are observed, which exhibit 2D-like behavior. The topological insulator with long range magnetic ordering in rare earth doped Bi 1.08 Sb 0.9 Te 2 S single crystal provides an ideal platform for quantum transport studies and potential applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Direct link between disorder and magnetoresistance in topological semimetals

The extent to which disorder influences the properties of topological semimetals is relevant to the understanding of topological states and their use in practical applications. Using molecular beam epitaxy, we achieve systematic control of point defect concentrations in the prototypical Dirac semimetal Cd 3 As 2 to gain insight into the role of disorder on electron transport behavior. Using the guiding center diffusion model for linear magnetoresistance, we extract point defect densities as a function of deposition conditions. We find that reducing cadmium defect concentrations by an order of magnitude results in an 2x increase in the magnetoresistance from 450% to 900%. This finding yields important information in the quest to identify the origin of linear magnetoresistance in a wider range of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Unconventional quantum oscillations and evidence of nonparabolic electronic states in quasi-two-dimensional electron system at complex oxide interfaces

The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states experimentally in these 2DES to advance technological applications. Here, we present insights into the electronic states of the 2DES at oxide interfaces through comprehensive investigations of Shubnikov–de Haas oscillations in three different systems: EuO/KTaO 3 , LaAlO 3 /SrTiO 3 , and amorphous-LaAlO 3 /KTaO 3 . To accurately resolve these oscillations, we conducted transport measurements in high magnetic fields up to 60 T and low temperatures down to 100 mK. For 2D confined electrons at these interfaces, we observed a progressive increase of oscillations frequency and cyclotron mass with the magnetic field. We interpret these universal and intriguing findings by considering the existence of nontrivial electronic bands, for which the 𝐸−𝑘 dispersion incorporates both linear and parabolic relations. In addition to providing experimental evidence for nonparabolic electronic states in KTaO 3 and SrTiO 3 2DES, the unconventional oscillations presented in this study establish a paradigm for quantum oscillations in 2DES based on perovskite transition metal oxides, where the oscillation frequencies in 1/𝐵 exhibit quadratic dependence on the magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Shubnikov–de Haas oscillations reaching the quantum limit in two-dimensional electron systems at SrTi⁢O 3 (111) interfaces

Transition metal oxides in the (111) orientation have been predicted to harbor topological phases and unconventional quantum states because of their hexagonal crystal symmetry and strong interactions between charge, spin, and orbital degrees of freedom. We report Shubnikov–de Haas oscillations into the quantum limit at magnetic fields up to 35 T in high-mobility (>20 000 c⁢m 2 V −1 s −1 ) two-dimensional electron liquids at (111)-oriented SrTi⁢O 3 interfaces with controllable carrier densities. Spin splitting is observed at low Landau levels, which is attributed to the interplay between the Zeeman splitting and Rashba spin-orbit coupling according to our theoretical modeling, yielding Landé factor 𝑔 = 0.29 and Rashba coefficient 𝛼 = 0.6 meV nm. Furthermore, at high magnetic field after the system reaches the lowest Landau level, the temperature dependence of the resistance shows a metallic to insulating state transition with the magnetoresistance changing significantly from a primarily quadratic to a large linear field dependence.

Magnetoresistance↗
DOE OSTI2022

Challenges to magnetic doping of thin films of the Dirac semimetal Cd 3 As 2

Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd 3 A s2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd 3 A s2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd 3 A s2 , resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared with pristine Cd 3 A s2 films grown under similar conditions. This suggests that the surfactant effect might also serve to remove impurities from the bulk of the film. Further, we observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd 3 A s2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Fermi surface origin of the low-temperature magnetoresistance anomaly

Magnetoresistance (MR) at a fixed field can demonstrate a non-monotonic temperature dependence—an anomaly—in many systems, including low-dimensional chalcogenides, spin- and charge-density-wave metals, and topological semimetals. These systems are often low-carrier-density compensated metals, and the physics are expected to be quasi-classical. Nevertheless, the MR anomaly also exists in the highly conductive metals Cr, Mo, and W for both linear and quadratic field dependence, with their non-saturation attributed to either open orbit or electron-hole compensation. We argue that quantum transport across sharp Fermi surface arcs, but not necessarily the full cyclotron orbit, governs this MR anomaly, thereby accounting for the profound effects of disorder. In Cr, an overlay exists between three temperature dependences: MR at a constant high field, linear MR at a low field, and Shubnikov-de Haas (SdH) oscillations of the smallest orbit. In Mo, the MR anomaly extends beyond the temperature of its SdH oscillations but disappears before Kohler’s scaling reemerges.

Feng, Yejun [Okinawa Institute of Science and Tech↗
DOE OSTI2024

Shubnikov-de Haas oscillations of biaxial-strain-tuned superconductors in pulsed magnetic field up to 60 T

Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure and, for metallic 2D materials, quantum oscillations superimposed on the transport signals encode Fermi surface parameters. In this manuscript, we utilize biaxial strain as an external tuning parameter and investigate the effects of strain on the electronic properties of two quasi-2D superconductors, MoTe 2 and RbV 3 Sb 5 , by measuring their magnetoresistance in pulsed magnetic fields up to 60 T. With a careful selection of insulating substrates, we demonstrate the possibility of both the compressive and tensile biaxial strains imposed on MoTe 2 and RbV 3 Sb 5 , respectively. For both systems, the applied strain has led to superconducting critical temperature enhancement compared to their free-standing counterparts, proving the effectiveness of this biaxial strain method at cryogenic temperatures. Clear quantum oscillations in the magnetoresistance—the Shubnikov–de Haas (SdH) effect—are obtained in both samples. In strained MoTe 2 , the magnetoresistance exhibits a nearly quadratic dependence on the magnetic field and remains non-saturating even at the highest field, whereas in strained RbV 3 Sb 5 , two SdH frequencies showed a substantial enhancement in effective mass values, hinting at a possible enhancement of charge fluctuations. Our results demonstrate that combining biaxial strain and pulsed magnetic field paves the way for studying 2D materials under unprecedented conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗