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Results for “Shutdown Initiating Event”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

A knowledge-informed large language model framework for U.S. nuclear power plant shutdown initiating event classification for probabilistic risk assessment

Identifying and classifying shutdown initiating events (SDIEs) is critical for developing shutdown probabilistic risk assessment for nuclear power plants. Existing computational approaches cannot achieve satisfactory performance due to the challenges of unavailable large, labeled datasets, imbalanced event types, and label noise. To address these challenges, we propose a hybrid pipeline that integrates a knowledge-informed machine learning model to prescreen non-SDIEs and a large language model (LLM) to classify SDIEs into four types. In the prescreening stage, we proposed a set of 44 SDIE text patterns that consist of the most salient keywords and phrases from six SDIE types. Text vectorization based on the SDIE patterns generates feature vectors that are highly separable by using a simple binary classifier. The second stage builds Bidirectional Encoder Representations from Transformers (BERT)-based LLM, which learns generic English language representations from self-supervised pretraining on a large dataset and adapts to SDIE classification by fine-tuning it on an SDIE dataset. The proposed approaches are evaluated on a dataset with 10,928 events using precision, recall ratio, F 1 score, and average accuracy. In conclusion, the results demonstrate that the prescreening stage can exclude more than 97% non-SDIEs, and the LLM achieves an average accuracy of 95.1% for SDIE classification.

99 - GENERAL AND MISCELLANEOUS↗
NASA NTRS1975

Jupiter orbiter lifetime: The hazard of Galilean satellite collision

The four Galilean satellites of Jupiter present a long-term collision hazard to an uncontrolled orbiting spacecraft that repeatedly enters the spatial region occupied by the satellites. Satellite close encounters and the likelihood of collision over a wide range of initial orbit conditions were analyzed. The effect of orbit inclination was of key interest. The scope of the analysis was restricted to orbital dynamic considerations alone, i.e. the question of biological contamination given the event of collision was not considered. A quarantine or orbiter lifetime of 50 years was assumed. This time period begins at spacecraft shutdown following completion of the mission objectives. A numerical approach was adopted wherein each initial orbit is propagated for 50 years, and satellite closest encounter distances recorded on every revolution. The computer program includes approximations of the three major perturbation effects on the long-term motion of the orbiter: (1) Jupiter oblateness, (2) solar gravity, and (3) satellite gravity.

Friedlander, A. L.↗
NASA NTRS1970

Combustion anomalies in stop-restart firing of hybrid rocket engines

An experimental investigation of the restart process of an oxygen-Plexiglas hybrid rocket demonstrated that preheating the fuel (as a consequence of a previous ignition and a temporary extinguishment) significantly increases the rate of chamber pressurization and produces regression rate overshoots during reignition. Higher rates of chamber pressurization measured during the restart transient imply faster instantaneous regression rates of the fuel during restart. Transient periods following the initial ignition and the restart after a two-second shutdown were observed for four experimental tests. Thermocouples were embedded in the fuel to record subsurface temperature histories. A mathematical model of the thermal processes in the fuel and the events that occur during an experimental firing was developed to calculate the regression rate transients. Quantitative agreement with experimental results was obtained by making nominal corrections to the calculated convective and radiative heating rates.

Saraniero, M. A.↗
DOE OSTI2026

Sensitivity Analysis of Numerical Modeling Input Parameters on Wind Turbine Loads in Deterministic Transient Load Cases

Aero-hydro-elastic-servo numerical models used to design and analyze wind turbines are based on thousands of variable input parameters that dictate the inflow, aerodynamic, structural, and control characteristics of the system as well as sea state, hydrodynamic, and mooring characteristics for fixed-bottom and floating offshore wind turbines. Each of these parameters has some level of uncertainty, which can significantly impact the predicted loads. Understanding the uncertainty in the inputs is critical to understanding the uncertainty in the outputs. This work demonstrates a screening technique to identify which parameters ultimate loads are most sensitive to so that more focus can be given to quantifying the possible range of those parameters. This technique has been demonstrated previously for different turbine and load case types and is extended here for a floating offshore wind turbine in design load cases with transient events both in the inflow and operations. Each load case features a deterministic gust, including variations in wind speed, direction, and shear. Load cases are considered with an operating turbine as well as with prescribed fault, startup, and shutdown procedures. The study found that key input parameters with a large impact on loads include the length of the gust, the magnitude of direction change and speed in the gust, the initial wind speed, and the shape of the gust profile.

17 WIND ENERGY↗
DOE OSTI2024

SMART SiC Power ICs: Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (Final Technical Report)

This collaborative project was initiated with the goal of developing Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (SMART SiC Power ICs). In pursuit of this objective, innovative designs and fabrication processes were implemented, enabling the development of large-scale (>1 cm²) SiC Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits and high-voltage (400–600 V) lateral power MOSFETs (HV-LDMOS) on 150 mm 4H-SiC substrates. The resulting SMART SiC Power ICs are tailored to support a wide range of applications requiring diverse voltage and power levels, including automotive systems, industrial equipment, electronic data processing, energy harvesting, and power conditioning. To achieve the proposed ‘SMART’ technology for SiC ICs, the team focused on 1) the Development of highly scalable CMOS (with high channel mobilities for n-type and p-type MOSFETs), LDMOS (~600V, 10A rated), and IC technologies, 2) Establishment of a manufacturable process baseline in a production-grade-, 150mm, SiC fabrication facility, and 3) Demonstration of SMART SiC ICs. The project initially comprised of fabricating 5 lots. In lot 1 monolithic integration using a single process was achieved. Here, we were able to successfully accomplish Integrated HV NMOSFET with LV CMOS on N-epi/N+ Substrate. The HV NMOS demonstrated a Breakdown Voltage (BV) more than 600V. Circuit demonstration of CMOS was also another achievement from this lot. In lot 2, priority was in place for isolation and integration. Here we addressed the isolation concerns and integrated the HV NMOS and LV CMOS using the N-epi/P-epi/N+ substrate. Similar to the lot 1, we were able to achieve a BV of 600 V for HV NMOS. Optimized gate oxide process with high channel mobilities, better gate oxide reliability, development of SPICE models, successful ohmic process development, novel wafer area saving design layouts, P+ isolation schemes with channeling implantations and high temperature operational circuits demonstrations are some of the key highlights from lot 1 and lot2. In lot 3, discrete device performances of HV NMOS with a BV ~700V and reliable LV CMOS performances were achieved. Also, novel architectural solutions were successfully implemented to suppress the electric field crowding at the gate oxide for reliable operations. In lot 4, half bridge power driver ICs with a conversion efficiency of (target 90% to 95%) in the 1-5MHz switching frequency range for output power between 25 W to 3 kW have been included in. However, due to the unfortunate events of sudden foundry shutdown (SiCamore Semi) the processing of lot 4 wafers came to a complete stop (January 2024). Arrangements have recently been made to shift the fabrication to another foundry, General Electric Aerospace. The fabrication process now on course (as of December 2024). Characterizations are delayed due to this unfortunate circumstance. The proposed trench architectural-based devices and ICs (lot 5) underwent modifications from the original project proposal. This change was necessitated by limitations in the availability of trench-based processes at commercial production-grade fabrication facilities in the US. Apart from above achievements, a Process Development Kit (PDK) was successfully developed for planar type SiC CMOS/LDMOS.

42 ENGINEERING↗