Results for “Si/Al interface”

Interfacial impurities and the reaction between Si and evaporated Al

As commonly formed, the interface between substrate Si and evaporated Al is laden with impurities. Subsequent heating causes modest dissolution of Si into solid Al, the dissolution morphology being influenced by the interface impurities. In the present experiments, the amount of Si dissolving was considerably enhanced, causing sufficient interface movement to carry most interfaces clear of the original impurities. Under these conditions, the Si/Al interface assumes, during brief heat treatment, a simple shape composed of a few 111 plane-type facets. Such Si/Al interfaces produced in situ should be useful for low-temperature solid-state growth of Si.