Metallization systems for silicon integrated circuits.
Si integrated circuits single and composite layered metallization systems, comparing characteristics of various refractory and noble metals
Terry, L. E.↗
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Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987
The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.
Adams, Michael J.↗
Factors Influencing the Selection of the Systems Integration Organizational Model Type for Planning and Implementing Government High-Technology Programs
While there has been extensive research in defining project organizational structures for traditional projects, little research exists to support high technology government project s organizational structure definition. High-Technology Government projects differ from traditional projects in that they are non-profit, span across Government-Industry organizations, typically require significant integration effort, and are strongly susceptible to a volatile external environment. Systems Integration implementation has been identified as a major contributor to both project success and failure. The literature research bridges program management organizational planning, systems integration, organizational theory, and independent project reports, in order to assess Systems Integration (SI) organizational structure selection for improving the high-technology government project s probability of success. This paper will describe the methodology used to 1) Identify and assess SI organizational structures and their success rate, and 2) Identify key factors to be used in the selection of these SI organizational structures during the acquisition strategy process.
Thomas, Leann↗
Carbon Nanofiber-Based, High-Frequency, High-Q, Miniaturized Mechanical Resonators
High Q resonators are a critical component of stable, low-noise communication systems, radar, and precise timing applications such as atomic clocks. In electronic resonators based on Si integrated circuits, resistive losses increase as a result of the continued reduction in device dimensions, which decreases their Q values. On the other hand, due to the mechanical construct of bulk acoustic wave (BAW) and surface acoustic wave (SAW) resonators, such loss mechanisms are absent, enabling higher Q-values for both BAW and SAW resonators compared to their electronic counterparts. The other advantages of mechanical resonators are their inherently higher radiation tolerance, a factor that makes them attractive for NASA s extreme environment planetary missions, for example to the Jovian environments where the radiation doses are at hostile levels. Despite these advantages, both BAW and SAW resonators suffer from low resonant frequencies and they are also physically large, which precludes their integration into miniaturized electronic systems. Because there is a need to move the resonant frequency of oscillators to the order of gigahertz, new technologies and materials are being investigated that will make performance at those frequencies attainable. By moving to nanoscale structures, in this case vertically oriented, cantilevered carbon nanotubes (CNTs), that have larger aspect ratios (length/thickness) and extremely high elastic moduli, it is possible to overcome the two disadvantages of both bulk acoustic wave (BAW) and surface acoustic wave (SAW) resonators. Nano-electro-mechanical systems (NEMS) that utilize high aspect ratio nanomaterials exhibiting high elastic moduli (e.g., carbon-based nanomaterials) benefit from high Qs, operate at high frequency, and have small force constants that translate to high responsivity that results in improved sensitivity, lower power consumption, and im - proved tunablity. NEMS resonators have recently been demonstrated using topdown, lithographically fabricated ap - proaches to form cantilever or bridgetype structures. Top-down approaches, however, rely on complicated and expensive e-beam lithography, and often require a release mechanism. Reso - nance effects in structures synthesized using bottom-up approaches have also recently been reported based on carbon nanotubes, but such approaches have relied on a planar two-dimensional (2D) geometry. In this innovation, vertically aligned tubes synthesized using a bottom- up approach have been considered, where the vertical orientation of the tubes has the potential to increase integration density even further. The simulation of a vertically oriented, cantilevered carbon nanotube was performed using COMSOL Multi - physics, a finite element simulation package. All simulations were performed in a 2D geometry that provided consistent results and minimized computational complexity. The simulations assumed a vertically oriented, cantilevered nanotube of uniform density (1.5 g/cu cm). An elastic modulus was assumed to be 600 GPa, relative permittivity of the nanotube was assumed to be 5.0, and Poisson s ratio was assumed to be 0.2. It should be noted that the relative permittivity and Poisson s ratio for the nanotubes of interest are not known accurately. However, as in previous simulations, the relative permittivity and Poisson s ratios were treated as weak variables in the simulation, and no significant changes were recognized when these variables were varied.
Kaul, Anupama B.↗
Signal and Power Integrity Design Methodology for High-Performance Flight Computing Systems
Computing capabilities of space systems have in-creased onboard performance by orders of magnitude with the use of radiation-tolerant field-programmable gate arrays (FPGA)and processors. The incorporation of signal and power integrity analysis with printed circuit board (PCB) design in reliable computing architectures for space systems has become critical to enable future mission capabilities. Developers launch high-performance processors into a breadth of orbits and missions, running varying applications that create challenges for designing reliable computing hardware. Specifically, for these designs, academic and industry research has focused on component radiation performance, fault mitigation, and reliable architectures. How-ever, other design parameters including electromagnetic interference (EMI), PCB stackup, signal integrity (SI), voltage regulator module (VRM) design, and power distribution network (PDN)are often deprioritized or disregarded as the design matures. Since these characteristics are becoming more significant in high-performance processor designs, this research presents a hardware design and analysis methodology for high-performance, space-computing systems that focuses on a holistic design approach and PDN reliability. While these challenges exist across all space hardware, the reduced PCB dimensions imposed by SmallSats and CubeSats introduce additional hurdles, specifically to VRM and decoupling design. By examining the relationship between the PDN and radiation performance, an analytical relationship is developed that incorporates Total Ionizing Dose and Single-Event Transients to ensure reliability throughout the mission duration. The presented design methodology is applied to the SpaceCube v3.0 Mini, an FPGA-based on-board science data processing system developed at NASA Goddard Space Flight Center.
Advanced avionics↗
M2020 Overview: With a Focus on Sample Caching and System Integration and Test (SI&T)
UNKNOWN
Gentile, Matthew↗
Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long wavelength infrared detectors
There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 microns which operate with close-cycle cryocoolers above 65 K. In addition, it would be very attractive to have Si-based infrared (IR) detectors that can be easily integrated with Si readout circuitry and have good pixel-to-pixel uniformity, which is critical for focal plane array (FPA) applications. Here, researchers report a novel Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) detector approach with a tailorable long wavelength infrared cutoff wavelength, based on internal photoemission over the Si(1-x)Ge(x)/Si heterojunction. The HIP detectors were grown by molecular beam epitaxy (MBE), which allows one to optimize the device structure with precise control of doping profiles, layer thickness and composition. The feasibility of a novel Si(1-x)Ge(x)/Si HIP detector has been demonstrated with tailorable cutoff wavelength in the LWIR region. Photoresponse at wavelengths 2 to 10 microns are obtained with quantum efficiency (QE) above approx. 1 percent in these non-optimized device structures. It should be possible to significantly improve the QE of the HIP detectors by optimizing the thickness, composition, and doping concentration of the Si(1-x)Ge(x) layers and by configuring the detector for maximum absorption such as the use of a cavity structure. With optimization of the QE and by matching the barrier energy to the desired wavelength cutoff to minimize the thermionic current, researchers predict near background limited performance in the LWIR region with operating temperatures above 65K. Finally, with mature Si processing, the relatively simple device structure offers potential for low-cost producible arrays with excellent uniformity.
Lin, T. L.↗
Phase-change Reconfigurable Optical WavEfront Synthesis System (PROWESS)
We report the design, fabrication, and testing of electrically tunable metasurface k-space filters based on the low-loss, high-contrast phase-change material GSST and a transparent Si electrode heating architecture. A 10x10 array of PCM elements integrated with Si heaters was fabricated via foundry processes, and used to actively control the crystallinity of a metasurface consisting of GSST nano antennae. By selectively varying the structural state of individual PCM elements, specific k-vectors of transmitted light can effectively be filtered out, resulting in improved imaging quality by reducing the scattered light that reaches a detector. Optimized doping profiles in the Si heaters allow for uniform, low power, reliable and repeatable switching of the GSST state. Compared to other k-space filters, this new architecture is completely transparent to the wavelength of interest and can be actively reconfigured in real time with high performance, low power consumption and a small footprint. The 10x10 array device is a proof-of-concept demonstration that can enable high-resolution arbitrary wavefront synthesis and correction in the future, with key applications in optical communications, beam steering, remote sensing, and adaptive optics.
phase change material↗
Flat-plate collector research area: Silicon material task
Silane decomposition in a fluidized-bed reactor (FBR) process development unit (PDU) to make semiconductor-grade Si is reviewed. The PDU was modified by installation of a new heating system to provide the required temperature profile and better control, and testing was resumed. A process for making trichlorosilane by the hydrochlorination of metallurgical-grade Si and silicon tetrachloride is reported. Fabrication and installation of the test system employing a new 2-in.-dia reactor was completed. A process that converts trichlorosilane to dichlorosilane (DCS), which is reduced by hydrogen to make Si by a chemical vapor deposition step in a Siemens-type reactor is described. Testing of the DCS PDU integraled with Si deposition reactors continued. Experiments in a 2-in.-dia reactor to define the operating window and to investigate the Si deposition kinetics were completed.
Lutwack, R.↗
Performance Of Infrared-Detector Array
Report describes design, characteristics, and performance of Si:Sb integrated array of infrared detectors, sensitivity of which extends to wavelength of about 31 micrometer, improvement over 28-micrometer limit of current Si:As impurity-band-conduction devices. Also describes electronics and special Dewar system developed to test device at low temperature to reduce background noise.
Goebel, J. H.↗
Carbon-Nanotube-Based Chemical Gas Sensor
Conventional thermal conductivity gauges (e.g. Pirani gauges) lend themselves to applications such as leak detectors, or in gas chromatographs for identifying various gas species. However, these conventional gauges are physically large, operate at high power, and have a slow response time. A single-walled carbon-nanotube (SWNT)-based chemical sensing gauge relies on differences in thermal conductance of the respective gases surrounding the CNT as it is voltage-biased, as a means for chemical identification. Such a sensor provides benefits of significantly reduced size and compactness, fast response time, low-power operation, and inexpensive manufacturing since it can be batch-fabricated using Si integrated-circuit (IC) process technology.
Kaul, Arunpama B.↗
Generalized energetics for linear and nonlinear symmetric instabilities
The generalized energy conservation integral is applied to linear and nonlinear symmetric instabilities (SIs) and conditional symmetric instabilities (CSIs) in uniform and nonuniform basic states. The generalized energy conservation integral for linear SI in nonuniform basic state is refined to include initial thermal-inertial perturbations. A generalized conservation integral is derived for a nonlinear SI with uniform and nonuniform basic states. The integral reveals that: (1) the stability conditions of nonlinear and linear SI are not the same; (2) when the basic state is symmetrically stable the nonlinear evolution of a symmetric disturbance is energetically bounded by its initial energy; and (3) when the basic state is symmetrically unstable the growth of the symmetric perturbation is approximated by the linear SI theory. Precipitative heating is incorporated into the generalized energy integral for nonlinear CSI; the relation between nonlinear evolution of a CSI circulation and precipitative heating is examined.
Xu, Q.↗
Integrated Silicon Platform for Co-planar Design of Vertically Stacked 2.06 THz Mixer Module
The process for fabricating and utilizing the threedimensional Si stack receiver front-end is described in this paper. The capability to have exact dimensionality becomes essential as frequency scales due to the complexity arising in assembly and finer tolerances. Total process yields can be improved through Si fabrication by verifying achievement of specified tolerances lithographically and compatibility to rapid process changes and design fine-tuning. The integrated Si platform with the mounted device is shown in Figure 1. Signal I/O and alignment modalities enable lownoise measurements. Silicon micromachining provides the necessary accuracy for integration at the several THz regime. Particularly, processing and etch recipes have demonstrated smooth surfaces of < 1 μm surface roughness. In consideration is pre-compensating for minute offsets, matching mechanical strain on all interfaces, and including passive alignment verification in the design. As compared to metal blocks, computer numerical controlled (CNC) milling can produce slight burrs in the interfaces resulting in misalignment and resultant strain between two pieces of components. Furthermore, Si integration can make possible arrays of pixel transceivers through compact subsystems for the purpose of measuring multiple lines of spectral content simultaneously in space.
Mehdi, Imran↗
Research and development of low cost processes for integrated solar arrays
Si reduction, purification and sheet generation work has been concentrated on gaining information about a reduction process combined with purification (higher purity arc furnace with gas blowing and gradient freezing), transport process with purification and polycrystal sheet growth potential (SiF2), plastic deformation for sheet generation, and float zone sheet recrystallization.
Wolf, M.↗
Stray Light Modeling of the James Webb Space Telescope (JWST) Integrated Science Instrument Module (ISIM)
This paper describes an integrated stray light model of each Science Instrument (SI) in the Integrated Science Instrument Module (ISIM) of the James Webb Space Telescope (JWST) and the Optical Telescope Element Simulator (OSIM), the light source used to characterize the performance of ISIM in cryogenic-vacuum tests at the Goddard Space Flight Center (GSFC). We present three cases where this stray light model was integral to solving questions that arose during the testing campaign - 1) ghosting and coherent diffraction from hardware surfaces in the Near Infrared Imager and Slitless Spectrograph (NIRISS) GR700XD grism mode, 2) ghost spots in the Near Infrared Camera (NIRCam) GRISM modes, and 3) scattering from knife edges of the NIRCam focal plane array masks.
stray light modeling↗
Design of Si micro-cone light concentrators for heterogeneous integration with MWIR FPAs
Using 3-D finite difference time domain (FDTD) modeling, it is shown that micro-cone arrays obtained by anisotropic wet etching of Si have high potential for concentrating light on compact photodetector mesas of mid-wave infrared (MWIR) focal plane arrays (FPAs). The proposed structures can be heterogeneously integrated with FPAs possessing high quantum efficiency. They can be used to reduce the thermal noise and, potentially, increase the operating temperature of FPAs while maintaining high sensitivity of the photodetectors.
Astratov, Vasily N.↗
Method for producing a hybridization of detector array and integrated circuit for readout
A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.
Fossum, Eric R.↗
Silicon contact for area reduction of integrated circuits
Epitaxially grown Si contact for area reduction of MOS transistor circuits
Alexander, D. S.↗