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NASA NTRS2016

Temperature Dependence of Electrical Resistance of Woven Melt-Infiltrated SiCf/SiC Ceramic Matrix Composites

Recent studies have successfully shown the use of electrical resistance (ER)measurements to monitor room temperature damage accumulation in SiC fiber reinforced SiC matrix composites (SiCf/SiC) Ceramic Matrix Composites (CMCs). In order to determine the feasibility of resistance monitoring at elevated temperatures, the present work investigates the temperature dependent electrical response of various MI (Melt Infiltrated)-CVI (Chemical Vapor Infiltrated) SiC/SiC composites containing Hi-Nicalon Type S, Tyranno ZMI and SA reinforcing fibers. Test were conducted using a commercially available isothermal testing apparatus as well as a novel, laser-based heating approach developed to more accurately simulate thermomechanical testing of CMCs. Secondly, a post-test inspection technique is demonstrated to show the effect of high-temperature exposure on electrical properties. Analysis was performed to determine the respective contribution of the fiber and matrix to the overall composite conductivity at elevated temperatures. It was concluded that because the silicon-rich matrix material dominates the electrical response at high temperature, ER monitoring would continue to be a feasible method for monitoring stress dependent matrix cracking of melt-infiltrated SiC/SiC composites under high temperature mechanical testing conditions. Finally, the effect of thermal gradients generated during localized heating of tensile coupons on overall electrical response of the composite is determined.

Ceramic Matrix Composites↗

NASA NTRS2003

Acoustic Emission and Damage Monitoring During Fatigue of C-SiC Composites at Room Temperature

Fatigue experiments were performed at room temperature for C-fiber reinforced chemical vapor infiltrated (CVI Sic) matrix and melt-infiltrated (MI) matrix composites. The goal was to associate some nondestructive parameter or acoustic emission characteristic with the processes that lead to fatigue failure. Failure only occurred at loads very close to the ultimate. However, correlations between the acoustic data and the eventual failure of the composites could be made. These will be presented with respect to health monitoring of these types of composites.

Morscher, Gregory N.↗

NASA NTRS2005

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

silicon carbide detectors↗

NASA NTRS2008

Electrical Resistance Technique to Monitor SiC Composite Detection

Ceramic matrix composites are suitable for high temperature structural applications such as turbine airfoils and hypersonic thermal protection systems. The employment of these materials in such applications is limited by the ability to process components reliable and to accurately monitor and predict damage evolution that leads to failure under stressed-oxidation conditions. Current nondestructive methods such as ultrasound, x-ray, and thermal imaging are limited in their ability to quantify small scale, transverse, in-plane, matrix cracks developed over long-time creep and fatigue conditions. Electrical resistance of SiC/SiC composites is one technique that shows special promise towards this end. Since both the matrix and the fibers are conductive, changes in matrix or fiber properties should relate to changes in electrical conductivity along the length of a specimen or part. The effect of matrix cracking on electrical resistivity for several composite systems will be presented and some initial measurements performed at elevated temperatures under stress-rupture conditions. The implications towards electrical resistance as a technique applied to composite processing, damage detection (health monitoring), and life-modeling will be discussed.

Smith, Craig↗

NASA NTRS2003

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

Chen, Liang-Yu↗

NASA NTRS2004

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Ponchak, George E.↗

NASA NTRS2011

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

Meredith, Roger D.↗

NASA NTRS1994

Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

Opila, Elizabeth J.↗

NASA NTRS1997

Paralinear Oxidation of CVD SiC in Water Vapor

The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

Opila, Elizabeth J.↗

NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗

NASA NTRS2001

Oxidation of ZrB2-SiC

In this paper the oxidation behavior of ZrB2-20 vol% SiC is examined. Samples were exposed in stagnant air in a zirconia furnace (Deltech, Inc.) at temperatures of 1327, 1627, and 1927 C for ten ten-minute cycles. Samples were removed from the furnace after one, five, and ten cycles. Oxidized material was characterized by mass change when possible, x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). Oxidation kinetics, oxide scale development, and matrix recession were monitored as a function of time and temperature. Oxidation and recession rates of ZrB2 - 20 vol% SiC were adequately modeled by parabolic kinetics. Oxidation rates of this material are rapid, allowing only very short-term application in air or other high oxygen partial pressure environments.

Opila, Elizabeth J.↗

NASA NTRS1998

Cyclic Fiber Push-In Test Monitors Evolution of Interfacial Behavior in Ceramic Matrix Composites

SiC fiber-reinforced ceramic matrix composites are being developed for high-temperature advanced jet engine applications. Obtaining a strong, tough composite material depends critically on optimizing the mechanical coupling between the reinforcing fibers and the surrounding matrix material. This has usually been accomplished by applying a thin C or BN coating onto the surface of the reinforcing fibers. The performance of these fiber coatings, however, may degrade under cyclic loading conditions or exposure to different environments. Degradation of the coating-controlled interfacial behavior will strongly affect the useful service lifetime of the composite material. Cyclic fiber push-in testing was applied to monitor the evolution of fiber sliding behavior in both C- and BN-coated small-diameter (15-mm) SiC-fiber-reinforced ceramic matrix composites. The cyclic fiber push-in tests were performed using a desktop fiber push-out apparatus. At the beginning of each test, the fiber to be tested was aligned underneath a 10- mm-diameter diamond punch; then, the applied load was cycled between selected maximum and minimum loads. From the measured response, the fiber sliding distance and frictional sliding stresses were determined for each cycle. Tests were performed in both room air and nitrogen. Cyclic fiber push-in tests of C-coated, SiC-fiber-reinforced SiC showed progressive increases in fiber sliding distances along with decreases in frictional sliding stresses for continued cycling in room air. This rapid degradation in interfacial response was not observed for cycling in nitrogen, indicating that moisture exposure had a large effect in immediately lowering the frictional sliding stresses of C-coated fibers. These results indicate that matrix cracks bridged by C-coated fibers will not be stable, but will rapidly grow in moisture-containing environments. In contrast, cyclic fiber push-in tests of both BN-coated, SiC-fiber-reinforced SiC and BNcoated, SiC-fiber-reinforced barium strontium aluminosilicate showed no significant changes in fiber sliding behavior with continued short-term cycling in either room air or nitrogen. Although the composites with BN-coated fibers showed stable short-term cycling behavior in both environments, long-term (several-week) exposure of debonded fibers to room air resulted in dramatically increased fiber sliding distances and decreased frictional sliding stresses. These results indicate that although matrix cracks bridged by BNcoated fibers will show short-term stability, such cracks will show substantial growth with long-term exposure to moisture-containing environments. Newly formulated BN coatings, with higher moisture resistance, will be tested in the near future.

Eldridge, Jeffrey I.↗

NASA NTRS1997

The Oxidation of CVD Silicon Carbide in Carbon Dioxide

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

Opila, Elizabeth J.↗

NASA NTRS1998

Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

Opila, Elizabeth J.↗

NASA NTRS2004

High-Temperature Probe Station Developed to Characterize Microwave Devices Through 500 C

A photograph and a block diagram of the high-temperature probe station are shown. The system consists of the ceramic heater mounted on a NASA shuttle tile insulator, a direct current power supply, a personal-computer-based data acquisition and temperature controller, microwave probes, a microscope, and a network analyzer. The ability to perform microwave tests at high temperatures is becoming necessary. There is now a need for sensors and communication circuits that can operate at 500 C and above for aircraft engine development and monitoring during flight. To address this need, researchers have fabricated devices using wide bandgap semiconductors such as SiC with targeted operating temperatures of 500 to 600 C. However, the microwave properties of these devices often change drastically with temperature, so any designs that are intended to be used in such an environment must be characterized at high temperatures. For some reliability, lifetime, and direct-current testing, the device under test can be packaged and characterized in an oven. However, for RF and microwave measurements, it is usually not possible to establish a calibrated reference plane at the device terminals within a package. In addition, the characteristics of the package would vary over a 500 C temperature range, and this would have to be accounted for when the data were analyzed. A high temperature probe station allows circuits and devices to be characterized through on wafer measurements across a broad temperature range with known reference plane. The conventional, commercially available thermal wafer-probe stations that are used to evaluate microwave devices across a controlled temperature range have a typical upper limit of 200 C. Standalone thermal heating chucks are available with an extended upper temperature range of 300 to 400 C. To effectively characterize devices at temperatures up to and surpassing 500 C, Glenn researchers developed a custom probe station. In the past, custom probe stations have been developed to test devices under other extreme environments, such as cryogenic temperatures as low as 37 K. Similarly, this custom probe station was specifically modified for high-temperature use. It allows devices to be measured quickly and flexibly, without the use of wire bonds and test fixtures. The probe station is shown making scattering parameter measurements from 1 to 50 GHz with a Hewlett-Packard 8510C Network Analyzer. There is a half-wafer of silicon directly on top of the heater to provide a uniform heated platform for our sample. A quarter wafer of silicon carbide forms the substrate for our test circuit of several transmission lines.

Downey, Alan N.↗

NASA NTRS1992

Failure mechanisms of 3-D woven SiC/SiC composites under tensile and flexural loading at room and elevated temperatures

Nicalon silicon carbide 3D yarn with silicon carbide matrix composites made through a chemical vapor infiltration (CVI) process were investigated under tensile and flexural loading at 23, 1200 and 1550 C in air. The effectiveness of a chemical vapor deposition (CVD) SiC surface coating was also evaluated in severe oxidizing environment. Acoustic emission sensors and in situ optical microscopy were used at room temperature to monitor the failure mechanisms. It is shown that the level of tensile stress at which nonlinear behavior begins is not drastically reduced at 1200 and 1550 C when composites were protected by a SiC surface coating. Extensive fiber pull-out was observed only in the 1550 C specimen. Similar behaviors were also found in flexural specimens.

Chulya, Abhisak↗

NASA NTRS2001

Palladium Implanted Silicon Carbide for Hydrogen Sensing

Silicon carbide is intended for use in fabrication of high-temperature, efficient hydrogen sensors. Traditionally, when a palladium coating is applied on the exposed surface of SiC, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. We have produced both a palladium coated SiC as well as a palladium, ion implanted SiC sensor. The palladium implantation was done at 500 C into the Si face of 6H, N-type SiC at various energies, and at various fluences. Then, we measured the hydrogen sensitivity response of each fabricated sensor by exposing them to hydrogen while monitoring the current flow across the p-n junction(s), with respect to time. The sensitivity of each sensor was measured at temperatures between 27 and 300 C. The response of the SiC sensors produced by Pd implantation has revealed a completely different behaviour than the SiC sensors produced by Pd deposition. In the Pd-deposited SiC sensors as well as in the ones reported in the literature, the current rises in the presence of hydrogen at room temperature as well as at elevated temperatures. In the case of Pd-implanted SiC sensors, the current decreases in the presence of hydrogen whenever the temperature is raised above 100 C. We will present the details and conclusions from the results obtained during this meeting.

Muntele, C. I.↗

NASA NTRS2004

AIN-Based Packaging for SiC High-Temperature Electronics

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Savrun, Ender↗