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At least 19 records

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

To understand the limitation of maximizing the switching speed of SiC low current discrete devices and high current power modules in hard switching applications, double pulse tests are conducted and the testing results are analyzed. For power modules, the switching speed is generally limited by the parasitics rather than the gate drive capability. For the discrete SiC device, the conventional voltage source gate drive (VSG) is not sufficient to maximize the switching speed even if the external gate resistance is minimized. The limitation of existing current source gate drives (CSG) are analyzed, and a CSG dedicated for SiC discrete devices is proposed, which can provide constant current during the switching transient regardless of the high Miller voltage and large internal gate resistance. Compared with the conventional VSG, the proposed CSG achieves 67% faster turnon time and 50% turn-off time, and 68% reduction in switching loss at full load condition.

Handong Gui↗

High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

Elmes, John↗

NASA Tech Briefs, February 2007

Topics covered include: Calibration Test Set for a Phase-Comparison Digital Tracker; Wireless Acoustic Measurement System; Spiral Orbit Tribometer; Arrays of Miniature Microphones for Aeroacoustic Testing; Predicting Rocket or Jet Noise in Real Time; Computational Workbench for Multibody Dynamics; High-Power, High-Efficiency Ka-Band Space Traveling-Wave Tube; Gratings and Random Reflectors for Near-Infrared PIN Diodes; Optically Transparent Split-Ring Antennas for 1 to 10 GHz; Ice-Penetrating Robot for Scientific Exploration; Power-Amplifier Module for 145 to 165 GHz; Aerial Videography From Locally Launched Rockets; SiC Multi-Chip Power Modules as Power-System Building Blocks; Automated Design of Restraint Layer of an Inflatable Vessel; TMS for Instantiating a Knowledge Base With Incomplete Data; Simulating Flights of Future Launch Vehicles and Spacecraft; Control Code for Bearingless Switched- Reluctance Motor; Machine Aided Indexing and the NASA Thesaurus; Arbitrating Control of Control and Display Units; Web-Based Software for Managing Research; Driver Code for Adaptive Optics; Ceramic Paste for Patching High-Temperature Insulation; Fabrication of Polyimide-Matrix/Carbon and Boron-Fiber Tape; Protective Skins for Aerogel Monoliths; Code Assesses Risks Posed by Meteoroids and Orbital Debris; Asymmetric Bulkheads for Cylindrical Pressure Vessels; Self-Regulating Water-Separator System for Fuel Cells; Self-Advancing Step-Tap Drills; Array of Bolometers for Submillimeter- Wavelength Operation; Delta-Doped CCDs as Detector Arrays in Mass Spectrometers; Arrays of Bundles of Carbon Nanotubes as Field Emitters; Staggering Inflation To Stabilize Attitude of a Solar Sail; and Bare Conductive Tether for Decelerating a Spacecraft.

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NASA Tech Briefs, December 2008

Topics covered include: Crew Activity Analyzer; Distributing Data to Hand-Held Devices in a Wireless Network; Reducing Surface Clutter in Cloud Profiling Radar Data; MODIS Atmospheric Data Handler; Multibeam Altimeter Navigation Update Using Faceted Shape Model; Spaceborne Hybrid-FPGA System for Processing FTIR Data; FPGA Coprocessor for Accelerated Classification of Images; SiC JFET Transistor Circuit Model for Extreme Temperature Range; TDR Using Autocorrelation and Varying-Duration Pulses; Update on Development of SiC Multi-Chip Power Modules; Radio Ranging System for Guidance of Approaching Spacecraft; Electromagnetically Clean Solar Arrays; Improved Short-Circuit Protection for Power Cells in Series; Electromagnetically Clean Solar Arrays; Logic Gates Made of N-Channel JFETs and Epitaxial Resistors; Improved Short-Circuit Protection for Power Cells in Series; Communication Limits Due to Photon-Detector Jitter; System for Removing Pollutants from Incinerator Exhaust; Sealing and External Sterilization of a Sample Container; Converting EOS Data from HDF-EOS to netCDF; HDF-EOS 2 and HDF-EOS 5 Compatibility Library; HDF-EOS Web Server; HDF-EOS 5 Validator; XML DTD and Schemas for HDF-EOS; Converting from XML to HDF-EOS; Simulating Attitudes and Trajectories of Multiple Spacecraft; Specialized Color Function for Display of Signed Data; Delivering Alert Messages to Members of a Work Force; Delivering Images for Mars Rover Science Planning; Oxide Fiber Cathode Materials for Rechargeable Lithium Cells; Electrocatalytic Reduction of Carbon Dioxide to Methane; Heterogeneous Superconducting Low-Noise Sensing Coils; Progress toward Making Epoxy/Carbon-Nanotube Composites; Predicting Properties of Unidirectional-Nanofiber Composites; Deployable Crew Quarters; Nonventing, Regenerable, Lightweight Heat Absorber; Miniature High-Force, Long-Stroke SMA Linear Actuators; "Bootstrap" Configuration for Multistage Pulse-Tube Coolers; Reducing Liquid Loss during Ullage Venting in Microgravity; Ka-Band Transponder for Deep-Space Radio Science; Replication of Space-Shuttle Computers in FPGAs and ASICs; Demisable Reaction-Wheel Assembly; Spatial and Temporal Low-Dimensional Models for Fluid Flow; Advanced Land Imager Assessment System; Range Imaging without Moving Parts.

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Development of a standard connector for orbital replacement units for serviceable spacecraft

The current trend for spacecraft to be serviceable and repairable in orbit has led to a modular approach to satellite subsystem design. Spacecraft equipment, such as sensors, tape recorders, computers, transponders, batteries, etc., housed in discrete modular units, (Orbital Replacement Units(ORUs)) can be attached and detached to the spacecraft as needed. The interface between the ORU and the spacecraft is crucial. The projected use of robotics and the need for a common mechanism capable of performing several functions puts many constraints on the design of the interface. Such an interface mechanisms was designed and developed called the Standard Interface Connector (SIC) that mates the ORU to the spacecraft. The SIC also provides for the flow of fluids, data, and power between the module and spacecraft. The baseline design presented can be configured to provide various attachment schemes. Tests on SIC models have demonstrated the functionality of the design and its compatibility with current robotics.

Heath, Ellen F.↗

A Solar Thermophotovoltaic Electric Generator for Remote Power Applications

We have successfully demonstrated that a solar thermophotovoltaic (TPV) system with a SiC graybody emitter and the monolithic interconnected module device technology can be realized. A custom-designed solar cavity was made to house the SiC emitter and the Monolithic Integrated Module (MIM) strings for testing in a Stirling dish solar concentrator. Five 1x1-cm MIMs, with a bandgap of 0.74 eV, were mounted on a specially designed water-cooled heatsink and were electrically connected in series to form a string. Two such strings were fabricated and tested, as well as high-performance 2x2-cm MIMs with a bandgap of 0.74 eV. Very high output power density values between 0.82 and 0.90 W/ square cm were observed for an average emitter temperature of 1501 K.

Fatemi, Navid S.↗

A Solar Thermophotovoltaic Electric Generator for Remote Power Applications

We have successfully demonstrated that a solar thermophotovoltaic (TPV) system with a SiC graybody emitter and the monolithic interconnected module device technology can be realized. A custom-designed solar cavity was made to house the SiC emitter and the MIM strings for testing in a Stirling dish solar concentrator. Five 1x1-cm MIMs, with a bandgap of 0.74 eV,were mounted on a specially designed water-cooled heatsink and were electrically connected in series to form a string. Two such strings were fabricated and tested, as well as high-performance 2x2-cm MIMs with a bandgap of 0.74 eV. Very high output power density values between 0.82 and 0.90 W/sq cm were observed for an average emitter temperature of 1501 K.

Fatemi, Navid S.↗

Silicon Carbide Being Developed for High-Definition Television (HDTV) Transmitter Modules

Through a Space Act Agreement, the NASA Lewis Research Center has helped develop the base silicon carbide (SiC) epitaxial growth technology for Westinghouse's efforts to bring silicon carbide products to the marketplace. SiC is a high-temperature, high-voltage semiconductor that can deliver greater than three times the power of conventional silicon devices. The technology was initially disclosed in the 1994 R&T report. NASA Lewis High Temperature Integrated Electronics and Sensors (HTIES) team is developing SiC as a material for advanced semiconductor electronic device applications because SiC-based electronics and sensors can operate in hostile environments where conventional silicon-based electronics cannot function. SiC transmitters hold great promise for television stations because they can convert broadcasts from analog to digital signals. A modular solid-state design provides broadcasters with an option to gradually add modules, increasing the power of their transmitters as they expand their high-definition television (HDTV) coverage. Using these high-power transistors will significantly reduce the space needed for high-power transmitters at television stations and will offer a solid-state solution, reducing long-term maintenance costs. Thus, transmitter manufacturers will be able to abandon their reliance on tube-based technology for high-power transmitters and will be able to build smaller, high-power, solid-state transmitters.

Costello, Donald E.↗

Metallic Powder Core Tubular Wire (PCTW) Development for Additive Manufacturing

NASA Langley Research Center (LaRC) in Hampton, VA, and the Center for Welding, Joining, and Coating Research (CWJCR) in the Department of Metallurgical and Materials Engineering at the Colorado School of Mines (CSM) in Golden, CO, have collaborated for nearly fifteen years to develop metallic powder core tubular wire (PCTW) feedstock for additive manufacturing (AM) using electron beam deposition. The motivation for this development was to offset dealloying observed during deposition of titanium and aluminum alloy solid wire feedstock in the LaRC electron beam freeform fabrication (EBF3) system and to explore novel alloy compositions by tailoring the powder fill. EBF3 is a fusion-based AM process that is performed under vacuum and is consequently prone to vaporization loss of low vapor pressure alloying elements. Research spanning four graduate student research projects succeeded in developing the basic methodology to fabricate PCTW, the mass balance equations used to define the powder fill, microstructure control through particulate inoculation, and the feasibility of producing metal matrix composite materials. Metallic PCTW is comprised of a thin foil sheath wrapped around a powder blend. Fabrication of PCTW at CSM was accomplished using a tubular wire mill system to first bend a flat strip into a u-shaped cross section, deposit a powder fill, create a lap joint to seal the wire, and draw to final diameter. Powder management systems were developed to ensure uniform mixing of powder constituents and identify feed rates for optimum fill ratios. Processing parameters were successfully developed for titanium and aluminum alloy sheaths to account for material work hardening during drawing. Mass balance equations were developed to account for compositional contributions of the sheath and powder fill. PCTW composition can be adjusted through selection of the sheath or powder materials. PCTWs were successfully developed to offset Al loss in deposits of Ti-6-4 and Mg loss in Al 6061, resulting in deposits that were within the composition limits for each material. Ti-6-4 deposits were fabricated using PCTW comprised of commercially pure (CP) titanium sheath and a fill of pre-alloyed Ti-6-4 powder with additions of elemental Al and V powders. Additions of both elements were required to account for the CP Ti from the sheath, and Al was further enhanced to offset documented losses in EBF3 deposits. For Al 6061 deposits, composition was modulated through the choice of sheath material. The PCTW was made using an Al 5052 sheath to supplement Mg content and a fill composition of pre-alloyed 6061 powder with additions of Si and Cu.The slower solidification rate of the EBF3 process compared with laser powder bed fusion processes can lead to coarse-grained microstructures and mechanical property anisotropy. EBF3deposits of Ti-6-4 exhibited large epitaxially grown β grains, which result in degraded mechanical properties in the deposition direction. Microstructure refinement was achieved through a combination of electron beam modulation and the use of a PCTW designed for Ti-6-4 deposits and modified by the addition of powder made from Fe and B. Resulting deposits exhibited reductions in β grain size, α phase colony intercept length and lath width, and an increased volume fraction of β phase. The mechanism of microstructure refinement was related to precipitation of boride particles. Hardness testing confirmed that mechanical property anisotropy was reduced and an overall increase in hardness was achieved.Metal matrix composite (MMC) materials offer strength and stiffness benefits over unreinforced materials. Two methods were investigated using PCTW technology for producing Al 6061 basedMMC materials; the direct addition of SiC reinforcing particles and the in-situ generation of reinforcements through reaction synthesis of precursor powders. Al 6061 based MMCs reinforced with SiC exhibited particle clustering and formation of aluminum carbides during deposition. The application of a Ni coating to the SiC particles prior to incorporation into the powder fill eliminated aluminum carbide formation and aided particle distribution during deposition. Modulation of beam focus and power further reduced aluminum carbide formation and aided particle distribution. In reaction synthesis, precursor additions undergo an exothermic reaction during deposition to form new ceramic products, generally of finer scale than the initial precursor components. The product phases provide reinforcement in the MMC and act as nucleation sites during solidification, resulting in grain refinement, improved mechanical properties, and reduced susceptibility to solidification cracking. Higher tensile strength and stiffness were demonstrated in Al 6061 based MMCs with 2 vol% reinforcement. These combined research efforts demonstrate the potential of PCTW technology for customizing of alloy composition and achieving microstructure control. A manufacturing process for titanium- and aluminum-based PCTWs was developed based on iterative design, theoretical calculations, and empirical data. PCTW technology successfully mitigated Al loss from Ti-6-4 and Mg loss in Al 6061, resulted in grain refinement in Ti-6-4, and demonstrated fabrication of Al based MMCs

Marcia S Domack↗

Packaging Technology for SiC High Temperature Circuits Operable up to 500 Degrees Centigrade

New high temperature low power 8-pin packages have been fabricated using commercial fabrication service. These packages are made of aluminum nitride and 96 percent alumina with Au metallization. The new design of these packages provides the chips inside with EM shielding. Wirebond geometry control has been achieved for precise mechanical tests. Au wirebond samples with 45 degree heel-angle have been tested using wireloop test module. The geometry control improves the consistency of measurement of the wireloop breaking point.Also reported on is a parametric study of the thermomechanical reliability of a Au thick-film based SiC die-attach assembly using nonlinear finite element analysis (FEA) was conducted to optimize the die-attach thermo-mechanical performance for operation at temperatures from room temperature to 500 degrees Centigrade. This parametric study centered on material selection, structure design and process control.

Chen, Lian-Yu↗

An Overview of Communications Technology and Development Efforts for 2015 SBIR Phase I

This report highlights innovative SBIR 2015 Phase I projects specifically addressing areas in Communications Technology and Development which is one of six core competencies at NASA Glenn Research Center. There are fifteen technologies featured with emphasis on a wide spectrum of applications such as novel solid state lasers for space-based water vapor dial; wide temperature, high voltage and energy density capacitors for aerospace exploration; instrument for airborne measurement of carbonyl sulfide; high-power tunable seed laser for methane Lidar transmitter; ROC-rib deployable ka-band antenna for nanosatellites; a SIC-based microcontroller for high-temperature in-situ instruments and systems; improved yield, performance and reliability of high-actuator-count deformable mirrors; embedded multifunctional optical sensor system; switching electronics for space-based telescopes with advanced AO systems; integrated miniature DBR laser module for Lidar instruments; and much more. Each article in this booklet describes an innovation, technical objective, and highlights NASA commercial and industrial applications. space-based water vapor dial; wide temperature, high voltage and energy density capacitors foraerospace exploration; instrument for airborne measurement of carbonyl sulfide; high-power tunable seed laser formethane Lidar transmitter; ROC-rib deployable ka-band antenna for nanosatellites.

space-based water vapor dial; wide temperature↗

Power Actuation and Switching Module Development

The Deep Space Avionics (DSA) Project is developing a Power Actuation and Switching Module (PASM). This component enables a modular and scalable design approach for power switching applications, which can result in a wide variety of power switching architectures using this simple building block. The PASM is designed to provide most of the necessary power switching functions of spacecraft for various Deep Space missions including future missions to Mars, comets, Jupiter and its moons. It is fabricated using an A SIC process that is tolerant of high radiation. The development includes two application specific integrated circuits (ASICs) and support circuitry all packaged using High Density Interconnect (HDI) technology. It can be operated in series or parallel with other PASMs, It can be used as a high-side or low-side switch and it can drive thruster valves, pyrotechnic devices such as NASA standard initiators, bus shunt resistors, and regular spacecraft component loads. Each PASM contains two independent switches with internal current limiting and over-current trip-off functions to protect the power subsystem from load faults. During turnon and turnoff each switch can limit the rate of current change (di/dt) to a value determined by the user. Threeway majority-voted On/Off commandability and full switch status telemetry (both analog and digital) are built into the module. This paper describes the development process used to design, model, fabricate, and test these compact and versatile power switches. Preliminary test results from prototype HDI PASM hardware are also discussed.

Power Actuation and Switching Module (PASM)↗

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Yang, Jie↗

CarbAl Heat Transfer Material

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Fink, Richard↗

A Review of Recent Thermophotovoltaic Energy Conversion Technology Development at NASA Lewis Research Center

NASA Lewis Research Center (LeRC) has had an ongoing research program in TPV since the late 1980's. This effort has included both in-house research programs on critical components such as photovoltaic cells (PV) and emitter materials, as well as an active contracting effort directed toward system, and component development. Of particular note is the in-house development of thin film selective emitters fabricated from rare-earth yttrium aluminum garnets (YAG). Also developed at LeRC is a Monolithic Interconnect Module (MIM) consisting of many small InGaAs cells series interconnected on a single InP substrate. An infrared reflector placed on the rear surface of the substrate returns unabsorbed photons to the emitter for recycling. The current contracted efforts include two TPV system developments by Tecogen, Inc., a solar powered TPV system development, a GaInAsSb cell development and several emitter development efforts (plasma-sprayed selective emitters, flexible SiC and a selective emitting light pipe).

Wilt, David M.↗

NASA Tech Briefs, January 2009

Tech Briefs are short announcements of innovations originating from research and development activities of the National Aeronautics and Space Administration. They emphasize information considered likely to be transferable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. Topics covered include: The Radio Frequency Health Node Wireless Sensor System; Effects of Temperature on Polymer/Carbon Chemical Sensors; Small CO2 Sensors Operate at Lower Temperature; Tele-Supervised Adaptive Ocean Sensor Fleet; Synthesis of Submillimeter Radiation for Spectroscopy; 100-GHz Phase Switch/Mixer Containing a Slot-Line Transition; Generating Ka-Band Signals Using an X-Band Vector Modulator; SiC Optically Modulated Field-Effect Transistor; Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions; Metrology System for a Large, Somewhat Flexible Telescope; Economical Implementation of a Filter Engine in an FPGA; Improved Joining of Metal Components to Composite Structures; Machined Titanium Heat-Pipe Wick Structure; Gadolinia-Doped Ceria Cathodes for Electrolysis of CO2; Utilizing Ocean Thermal Energy in a Submarine Robot; Fuel-Cell Power Systems Incorporating Mg-Based H2 Generators; Alternative OTEC Scheme for a Submarine Robot; Sensitive, Rapid Detection of Bacterial Spores; Adenosine Monophosphate-Based Detection of Bacterial Spores; Silicon Microleaks for Inlets of Mass Spectrometers; CGH Figure Testing of Aspherical Mirrors in Cold Vacuums; Series-Coupled Pairs of Silica Microresonators; Precise Stabilization of the Optical Frequency of WGMRs; Formation Flying of Components of a Large Space Telescope; Laser Metrology Heterodyne Phase-Locked Loop; Spatial Modulation Improves Performance in CTIS; High-Performance Algorithm for Solving the Diagnosis Problem; Truncation Depth Rule-of-Thumb for Convolutional Codes; Efficient Method for Optimizing Placement of Sensors.

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