Search NASA⌕ Search

SEARCH · Search NASA

Results for “SiCl4”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Deposition of silicon nitride from SiCl4 and NH3 in a low pressure RF plasma

Silicon nitride coatings were deposited in a low-pressure (1-10 Torr) RF plasma from SiCl4 and NH3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 C and 440 C respectively. The heating of the substrates depends mainly on the position and the induced RF power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the RF power input and the NH3-to-SiCl4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality.

Ron, Y.↗
DOE OSTI2020

Materials Data on SiCl4 by Materials Project

SiCl4 is Silicon tetrafluoride-like structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four tetrachlorosilane molecules. Si4+ is bonded in a tetrahedral geometry to four Cl1- atoms. There are two shorter (2.03 Å) and two longer (2.04 Å) Si–Cl bond lengths. There are four inequivalent Cl1- sites. In the first Cl1- site, Cl1- is bonded in a single-bond geometry to one Si4+ atom. In the second Cl1- site, Cl1- is bonded in a single-bond geometry to one Si4+ atom. In the third Cl1- site, Cl1- is bonded in a single-bond geometry to one Si4+ atom. In the fourth Cl1- site, Cl1- is bonded in a single-bond geometry to one Si4+ atom.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Spectral studies of SiCl4 + N2O + Ar and SiH4 + Ar mixtures in a shock tube in 160-550 nm range

Gases containing SiO, SiO2, SiH, and Si2 were produced in the reflected-shock region of a shock tube by heating SiCl4 + N2O + Ar and SiH4 + Ar mixtures with shock waves. Spectral absorption characteristics were measured in the 160-550 nm wavelength range and in the 2800-3600 K temperature range and compared to calculated values. The sums of the squares of electronic transition moments at equilibrium separation were derived. It was found that absorption by SiO2 and other known bands of SiO, SiH, and Si2 were too weak to be measured. The cross section of absorption by a continuum, believed due to SiH, varied from 2.5 x 10 to the -17th sq cm at 280 nm to 1.6 x 10 to the -18th sq cm at 440 nm.

Park, C.↗
NASA NTRS1981

Investigation of the hydrogenation of SiCl4

A laboratory scale pressure reactor was constructed to study the 3 SiCl + 2H2 + Si yields 4 SiHCl3 reaction at pressures up to 500 psig. Reaction kinetic measurements were carried out as a function of reactor pressure, reaction temperature and H2/SiCl4 feed ratio. Based on the reaction kinetic data, the hydroclorination of SiCl4 and m.g. silicon metal is found to be an efficient process to produce SiHCl3 in good conversions and in high yields. Copper is an effective catalyst. Results of the corrosion study show that conventional nickel chromium alloys are suitable material of construction for the hydrochlorination reactor. The hydrochlorination reaction is relatively insensitive to external process parameters such as silicon particle size distribution and the impurities in the m.g. silicon metal.

Mui, J. Y. P.↗
NASA NTRS1982

Investigation of the hydrochlorination of SiCL4

Reaction kinetic measurements on the hydrochlorination of SiCl4 and metallurgical grade (m.g.) silicon metal were made at a wide range of experimental variables. The effect of pressure on the reaction rate was studied at 25 psig, 100 psig, 150 psig and 200 psig, respectively. Results of these experiments show a large pressure effect on the hydrochlorination reaction. As expected, higher pressures produce a higher equilibrium SiHC13 conversion, since the hydrochlorination reaction results in a net volume contraction as product SiHC1 is formed. However, the reaction rate, namely, the rate at which the hydrochlorination reaction reaches its equilibrium SiHC13 conversion, was found to be much faster at low pressures.

Mui, J. Y. P.↗
NASA NTRS1983

Investigation of the Hydrochlorination of SiCl4

The hydrochlorination of silicon tetrachloride with hydrogen and metallurgical grade (m.g.) silicon metal, 3 SiCl4 + 2 H2 + Si yields 4 SiHCl3 was shown to be an efficient process to produce trichlorosilane. A research and development program was carried out to study the hydrochlorination reaction over a wide range of reaction conditions. Equilibrium constant and reaction kinetics measurements were made to provide the basis for a theoretical study on the hydrochlorination process. Thermodynamic properties of the hydrochlorination reaction were also measured. The effects of temperature, pressure, and concentration on the equilibrium constant, K sub p, were studied.

Mui, J. Y. P.↗
NASA NTRS1982

Investigation of the hydrochlorination of SiCl4

A research and development program on the hydrochlorination of silicon tetrachloride and metallurgical grade (m.g.) silicon metal to trichlorosilane was carried out as scheduled. Effects of pressure and temperature on this reaction are reported. The presence of HCl in the reaction product mixture was successfully analyzed. Approximately 0.1% to 0.5% HCl based on total chlorosilanes were produced by the hydrochlorination reaction. Experiments on the corrosion study were carried out to evaluate a variety of metals and alloys as the material of construction for the hydrochlorination reactor. Material includes carbon steel, nickel, copper, Alloy 400 (Monel), stainless steel (Type 304), Incoloy 800H and Hastelloy B-2. The corrosion test was carried out at reaction temperature of 500 C, pressure of 300 psig and H2/SiCl4 feed ratio of 2.0 for a total of 87 hours. Results of the corrosion test show that all the test samples achieved a weigh gain.

Mui, J. Y. P.↗
NASA NTRS1982

Investigation of the hydrochlorination of SiCl4

The hyrochlorination of SiC14 and m.g. silicon metal to produce SiHC13, was investigated. Reaction kinetic measurements were carried out to collect additional rate data at 525 C and 550 C. A theoretical study was carried out to provide a kinetic model and a rate equation for the hydrochlorination reaction. Results of this preliminary study show that the rate of formation of SiHC13 follows a pseudo first order kinetics. The rate constants were measured at three temperatures, 550 C, 500 C and 450 C, respectively. The activation energy was determined from the Arrhenius plot to give a value of 13.2 Kcal/mole. The design of a quartz reactor to measure reaction rates and equilibrium conversion of SiHC13 at reaction temperature up to 650 C was completed.

Mui, J. Y. P.↗
NASA NTRS1983

Investigation of the hydrochlorination of SiCl4

A basic, experimental study on the hydrochlorination of silicon tetrachloride and metallurgical grade silicon with hydrogen gas to form trichlorosilane was carried out to greatly expand the range of reaction conditions. The equilibrium constant, K sub p, for the hydrochlorination reaction was measured as a function of temperature, pressure and concentration. The variation of the equilibrium constant as a function of temperature provided the measurement on the heat of reaction, delta H, by the Second Law Method. The value of delta H was measured to give 10.6 Kcal/mole. The equilibrium constant was also studied as a function of concentration. In agreement with the theory, the equilibrium constant remained constant with respect to the varying H2/SiCl4 feed ratios. On the other hand, the effect of pressure on the equilibrium constant was found to be more complex.

Mui, J. Y. P.↗
NASA NTRS1981

Low cost solar array project silicon materials task. Development of a process for high capacity arc heater production of silicon for solar arrays

The experimental verification system for the production of silicon via the arc heater-sodium reduction of SiCl4 was designed, fabricated, installed, and operated. Each of the attendant subsystems was checked out and operated to insure performance requirements. These subsystems included: the arc heaters/reactor, cooling water system, gas system, power system, Control & Instrumentation system, Na injection system, SiCl4 injection system, effluent disposal system and gas burnoff system. Prior to introducing the reactants (Na and SiCl4) to the arc heater/reactor, a series of gas only-power tests was conducted to establish the operating parameters of the three arc heaters of the system. Following the successful completion of the gas only-power tests and the readiness tests of the sodium and SiCl4 injection systems, a shakedown test of the complete experimental verification system was conducted.

Fey, M. G.↗
NASA NTRS1985

Effect of argon and hydrogen on deposition of silicon from tetrochlrosilane in cold plasmas

The roles of Ar and H2 on the decomposition of SiCl4 in cold plasma were investigated by Langmuir probes and mass spectrometry. Decomposition of the reactant by Ar only has been found to be very slow. In presence of H2 in the plasma SiCl4 is decomposed by fast radical-molecule reactions which are further enhanced by Ar due to additional ion-molecule reactions in which more H radicals are produced. A model for the plasma-surface interactions during deposition of mu-Si in the Ar + H2 + SiCl4 system is presented.

Manory, R. R.↗
NASA NTRS1977

Shock-tube studies of silicon-compound vapors

Test gas mixtures containing SiO, SiO2, Si2, and SiH were produced in a shock tube by processing shock waves through a mixture of SiCl4 + N2O + Ar, SiH4 + Ar, or SiH4 + O2 + Ar. Absorption spectra of the test gases were studied photographically in the reflected shock region using a xenon flash lamp as the light source in the range of wavelengths between 250 and 600 nm. SiO was found to be a dominant species in the vapors produced by the SiCl4 + N2O and SiH4 + O2 mixtures. Spontaneous combustion was observed in the SiH4 + O2 + Ar mixture prior to the shock arrival, and the resulting solid SiO2 particles evaporated behind the shock wave. Spectral absorption characteristics of SiO, SiO2, Si2, and SiH were determined by studying the test gases.

Park, C.↗
NASA NTRS1977

Synthesis of silane and silicon in a non-equilibrium plasma jet

The feasibility of using a non-equilibrium hydrogen plasma jet as a chemical synthesis tool was investigated. Four possible processes were identified for further study: (1) production of polycrystalline silicon photovoltaic surfaces, (2) production of SiHCl3 from SiCl4, (3) production of SiH4 from SiHCl3, and (4) purification of SiCl4 by metal impurity nucleation. The most striking result was the recognition that the strongly adhering silicon films, amorphous or polycrystalline, produced in our studies could be the basis for preparing a photovoltaic surface directly; this process has potential advantages over other vapor deposition processes.

Calcote, H. F.↗
NASA NTRS1976

Evaluation of selected chemical processes for production of low-cost silicon

Plant construction costs and manufacturing costs were estimated for the production of solar-grade silicon by the reduction of silicon tetrachloride in a fluidized bed of seed particles, and several modifications of the iodide process using either thermal decomposition on heated filaments (rods) or hydrogen reduction in a fluidized bed of seed particles. Energy consumption data for the zinc reduction process and each of the iodide process options are given and all appear to be acceptable from the standpoint of energy pay back. Information is presented on the experimental zinc reduction of SiCl4 and electrolytic recovery of zinc from ZnCl2. All of the experimental work performed thus far has supported the initial assumption as to technical feasibility of producing semiconductor silicon by the zinc reduction or iodide processes proposed. The results of a more thorough thermodynamic evaluation of the iodination of silicon oxide/carbon mixtures are presented which explain apparent inconsistencies in an earlier cursory examination of the system.

Blocher, J. M., Jr.↗
NASA NTRS1976

Low cost silicon solar array project. Task 1: Establishment of the feasibility of a process capable of low cost, high volume production of silane, SiH4

The kinetics of the redistribution of dichlorosilane and trichlorosilane vapor over a tertiary amine ion exchange resin catalyst were investigated. The hydrogenation of SiCl4 to form HSiCl3 and the direct synthesis of H2SiCl2 from HCl gas and metallurgical silicon metal were also studied. The purification of SiH4 using activated carbon adsorbent was studied along with a process for storing SiH4 absorbed on carbon. The latter makes possible a higher volumetric efficiency than compressed gas storage. A mini-plant designed to produce ten pounds per day of SiH4 is described.

Breneman, W. C.↗
NASA NTRS1978

A shock-tube determination of the SiO /A 1 Pi - X 1 Sigma +/ transition moment

The sum of the squares of the electronic transition moments for the A 1 Pi - X 1 Sigma + band system of SiO has been determined from absorption measurements conducted in the reflected-shock region of a shock tube. The test gas was produced by shock-heating a mixture of N2O, SiCl4, and Ar, and the spectra were recorded photographically in the 260-290-nm wavelength range. The values of the sum as a function of internuclear distance between 2.8 and 3.3 Bohr were determined by comparing the measured absorption spectrum with that produced by a line-by-line synthetic-spectrum calculation which accounted for instrumental broadening. The value of the sum so deduced at an internuclear distance of 3.0 Bohr was 1.0 + or - 0.3 atomic units.

Park, C.↗
NASA NTRS1979

Silicon halide-alkali metal flames as a source of solar grade silicon

The feasibility of using alkali metal-silicon halide diffusion flames to produce solar-grade silicon in large quantities and at low cost is demonstrated. Prior work shows that these flames are stable and that relatively high purity silicon can be produced using Na + SiCl4 flames. Silicon of similar purity is obtained from Na + SiF4 flames although yields are lower and product separation and collection are less thermochemically favored. Continuous separation of silicon from the byproduct alkali salt was demonstrated in a heated graphite reactor. The process was scaled up to reduce heat losses and to produce larger samples of silicon. Reagent delivery systems, scaled by a factor of 25, were built and operated at a production rate of 0.5 kg Si/h. Very rapid reactor heating rates are observed with wall temperatures reaching greater than 2000 K. Heat release parameters were measured using a cooled stainless steel reactor tube. A new reactor was designed.

Olsen, D. B.↗
NASA NTRS1979

Evaluation of Selected Chemical Processes for Production of Low-cost Silicon, Phase 3

The construction and operation of an experimental process system development unit (EPSDU) for the production of granular semiconductor grade silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles is presented. The construction of the process development unit (PDU) is reported. The PDU consists of four critical units of the EPSDU: the fluidized bed reactor, the reactor by product condenser, the zinc vaporizer, and the electrolytic cell. An experimental wetted wall condenser and its operation are described. Procedures are established for safe handling of SiCl4 leaks and spills from the EPSDU and PDU.

Blocher, J. M., Jr.↗