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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Measurement of the decay rate of the SiH feature as a function of temperature

We have previously suggested that the SiH fundamental stretch could serve as a diagnostic indicator of the oxidation state of silicate surfaces exposed to the solar wind for prolonged periods. We have now measured the primary decay rate of SiH in vacuo as a function of temperature and find that the primary rate constant for the decay can be characterized by the following equation: k(min(exp -1)) approximately equals 0.186 exp(-9/RT) min(exp -1), where R = 2 x 10(exp -3) kcal deg(exp -1) mole(exp -1). This means that the half-life for the decay of the SiH feature at room temperature is approximately 20 yrs, whereas the half-life at a peak lunar regolith temperature of approximately 500K would be only approximately 20 days. At the somewhat lower temperature of approximately 400K the half-life for the decay is on the order of 200 days. The rate of loss of SiH as a function of temperature provides an upper limit to the quantity of H implanted by the solar wind which can be retained by a silicate grain in a planetary regolith. This will be discussed in more detail here.

Nuth, Joseph A., III↗
NASA NTRS1988

SiH and the unidentified 4.6 micron feature

Results from experimental studies of the irradiation of SiH4-H2O and Fe(CO)5-SiH4-H2O ice mixtures at 15 K using 1 MeV protons have revealed the synthesis of a very stable infrared spectral feature at 4.6 microns which is characteristic of the SiH functional group. This feature persists through warmup of the ice, exposure to air at 300 K, and vacuum annealing to at least 400 K. Because of the high cosmic abundance of both silicon and hydrogen and the unexpected stability of the SiH feature in our experiments, it is suggested that SiH might be responsible for the 4.6 micron absorption feature observed in W33A.

Nuth, Joseph A.↗
NASA NTRS1991

The SiH vibrational stretch as an indicator of the chemical state of interstellar grains

The infrared spectra of amorphous silicate grains and films formed in a variety of laboratory experiments have been measured. It is found that the frequency of the SiH fundamental stretch is extremely sensitive to the chemical environment of the grain in which the silicon is bound and varies from 2270/cm in oxidized grains to 2110/cm in a reducing environment. It is proposed that features previously observed in W33A could be due to -SiH groups in amorphous silica, partially reduced silica, silicon nitride or slightly oxidized silicon carbide. It is predicted that observations at 2270/cm will reveal a feature due to -SiH groups in highly oxidized interstelar and circumstellar grains. Such a feature might also appear in the spectra of comets.

Moore, Marla H.↗
NASA NTRS1992

The -SiH vibrational stretch as an indicator of the oxidation state of silicon in a cometary or asteroidal regolith

It has been experimentally shown that the position of the -SiH fundamental vibrational stretch is very sensitive to the chemical environment surrounding the Si atom. Si in an oxidizing environment will display an -SiH feature near 4.4 microns, whereas Si in a reducing grain could be responsible for a feature at 4.74 microns. It is further shown that, as an oxidized grain is reduced, the -SiH fundamental shifts to longer wavelengths through a series of intermediate bands.

Nuth, Joseph A., III↗
NASA NTRS1972

RKR Franck-Condon factors for blue and ultraviolet transitions of some molecules of astrophysical interest and some comments on the interstellar abundance of CH, CH+ and SiH+.

RKR Franck-Condon factors for thirteen of the blue and ultraviolet transitions of AlF, AlO, BH, BD, CH, CD, CH(+), SiO and SiH(+) have been calculated. The interstellar abundances of CH, CH(+) and SiH(+) are discussed with regard to recent laboratory measurements, our Franck-Condon factors, and observations of the sun and the interstellar medium.

Liszt, H. S.↗
NASA NTRS1984

The far-infrared laser magnetic resonance spectrum of the SiH radical and determination of ground state parameters

The far-infrared laser magnetic resonance spectrum of the SiH radical in the v = O level of its X2Pi state has been recorded. The signals are rather weak. The molecules were generated in the reaction between fluorine atoms and SiH4. Rotational transitions have been detected in both 2Pi1/2 and 2Pi3/2 spin components but no fine structure transitions between the spin components were observed. Proton hyperfine splittings were resolved on some lines. The measurements have been analyzed, subjected to a least-squares fit using an effective Hamiltonian, and the appropriate molecular parameters determined. The weakness of the spectrum and the failure of attempts to power saturate favorable lines are both consistent with a small value for the electric dipole moment for SiH.

Brown, J. M.↗
NASA NTRS1985

The microwave and far-infrared spectra of the SiH radical

Consideration of Si's cosmic abundance leads to the expectation that the related molecule SiH may be detected in extraterrestrial sources. A tabulation is presented of frequencies, wavelengths, and line strengths for SiH molecule transitions at microwave and far-IR wavelengths, on the basis of an analysis of its laser magnetic resonance spectrum. It is hoped that the frequencies presented will be useful to both laboratory spectroscopists and astrophysicists.

Brown, J. M.↗
NASA NTRS1985

Ignition of mixtures of SiH sub 4, CH sub 4, O sub 2, and Ar or N sub 2 behind reflected shock waves

Ignition delay times in mixtures of methane, silane, and oxygen diluted with argon and nitrogen were measured behind reflected shock waves generated in the chemical kinetic shock tube at Langley Research Center. The delay times were inferred from the rapid increase in pressure that occurs at ignition, and the ignition of methane was verified from the emission of infrared radiation from carbon dioxide. Pressures of 1.25 atm and temperatures from 1100 K to 1300 K were generated behind the reflected shocks; these levels are representative of those occurring within a supersonic Ramjet combustor. Expressions for the ignition delay time as a function of temperature were obtained from least squares curve fits to the data for overall equivalence ratios of 0.7 and 1.0. The ignition delay times with argon as the diluent were longer than those with nitrogen as the diluent. The infrared wavelength observations at 4.38 microns for carbon dioxide indicated that silane and methane ignited simultaneously (i.e., within the time resolution of the measurement). A combined chemical kinetic mechanism for mixtures of silane, methane, oxygen, and argon or nitrogen was assembled from one mechanism that accurately predicted the ignition of methane and a second mechanism that accurately predicted silane hydrogen ignition. Comparisons between this combined mechanism and experiment indicated that additional reactions, possibly between silyl and methyl fragments, are needed to develop a good silane methane mechanism.

Mclain, A. G.↗
NASA NTRS1986

Theoretical electric dipole moments of SiH, GeH and SnH

Accurate theoretical dipole moments have been computed for the X2Pi ground states of Si(-)H(+) (0.118 D), Ge(+)H(-) (0.085 D), and Sn(+)H(-) (0.357 D). The trend down the periodic table is regular and follows that expected from the electronegativities of the group IV atoms. The dipole moment of 1.24 + or - 0.1 D for GeH recently derived by Brown, Evenson and Sears (1985) from the relative intensities of electric and magnetic dipole transitions in the 10-micron spectrum of the X2Pi state is seriously questioned.

Pettersson, L. G. M.↗
NASA NTRS1986

Theoretical Electric Dipole Moments of SiH, GeH and SnH

Accurate theoretical dipole moments (mu(sub c) have been computed for the X(exp 2)Pi ground states of Si(-)H(+)(0.118 D), Ge(+)H(-)(0.085 D) and Sn(+)H(-)(0.357 D). The trend down the periodic table is regular and follows that expected from the electronegativities of the group IV atoms. The dipole moment of 1.24 +/- 0.1 D for GeH recently derived by Brown, Evenson and Sears from the relative intensities of electric and magnetic dipole transitions in the 10 microns spectrum of the X(exp 2)Pi state is seriously questioned.

Pettersson, Lars G. M.↗
NASA NTRS1988

Optical emission diagnostics of electron cyclotron resonance and glow discharge plasmas for a-Si:H and a-SiC:H film depositions

It is demonstrated that the steady-state and kinetic characteristics of ECR (electron cyclotron resonance) and RF glow discharge plasmas can be readily monitored by OES (optical emission spectroscopy) in real time during a-Si:H and a-SiC:H film depositions using an OMA detection system. The ECR and RF glow discharge plasmas used for a-Si:H and a-SiC:H film depositions were studied by monitoring the emission of SiH(asterisk), H(asterisk), H(asterisk)2, and CH(asterisk) excited states. The OES of the ECR plasma shows a strong emission at 434 nm from H(asterisk), which is not detectable in the glow discharge plasma. Steady-state OES studies have established preliminary correlations between SiH(asterisk) and CH(asterisk) emission intensities and the film deposition rate. Transient OES spectra of SiH4 and CH4 plasmas have shown different kinetics in SiH(asterisk) and CH(asterisk) emission intensities. Transient studies of the SiH(asterisk) emission intensity have indicated that additional mechanisms for producing the SiH(asterisk) species become evident in hydrogen-diluted silane plasmas.

Yang, C. L.↗
NASA NTRS1978

Spectral studies of SiCl4 + N2O + Ar and SiH4 + Ar mixtures in a shock tube in 160-550 nm range

Gases containing SiO, SiO2, SiH, and Si2 were produced in the reflected-shock region of a shock tube by heating SiCl4 + N2O + Ar and SiH4 + Ar mixtures with shock waves. Spectral absorption characteristics were measured in the 160-550 nm wavelength range and in the 2800-3600 K temperature range and compared to calculated values. The sums of the squares of electronic transition moments at equilibrium separation were derived. It was found that absorption by SiO2 and other known bands of SiO, SiH, and Si2 were too weak to be measured. The cross section of absorption by a continuum, believed due to SiH, varied from 2.5 x 10 to the -17th sq cm at 280 nm to 1.6 x 10 to the -18th sq cm at 440 nm.

Park, C.↗
NASA NTRS1977

Shock-tube studies of silicon-compound vapors

Test gas mixtures containing SiO, SiO2, Si2, and SiH were produced in a shock tube by processing shock waves through a mixture of SiCl4 + N2O + Ar, SiH4 + Ar, or SiH4 + O2 + Ar. Absorption spectra of the test gases were studied photographically in the reflected shock region using a xenon flash lamp as the light source in the range of wavelengths between 250 and 600 nm. SiO was found to be a dominant species in the vapors produced by the SiCl4 + N2O and SiH4 + O2 mixtures. Spontaneous combustion was observed in the SiH4 + O2 + Ar mixture prior to the shock arrival, and the resulting solid SiO2 particles evaporated behind the shock wave. Spectral absorption characteristics of SiO, SiO2, Si2, and SiH were determined by studying the test gases.

Park, C.↗
NASA NTRS1987

A full CI treatment of the 1A1, 1B1, and 3B1 states of SiH2

Full CI calculations are presented for the 1A1, 3B1, and 1B1 states of SiH2 at their respective equilibrium geometries and at geometries with the SiH bonds stretched. These results are compared with those obtained from single-reference and multireference CI calculations. The computed Te values agree well with the full CI results, provided that the effects of higher-than-double excitations are accounted for either by the Davidson correction or by a multireference approach. When the SiH bonds are stretched, the single-reference methods are not sufficiently flexible, and only CASSCF/MRCI achieves chemical accuracy (i.e., agrees with the full CI to 1 kcal/mol). Overall, the accuracy of the various approximate methods is very similar to that found for H2O, NH2, and CH2.

Bauschlicher, Charles W., Jr.↗
NASA NTRS1989

Electron cyclotron resonance deposition of a-Si:H and a-C:H films

Amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films have been deposited by electron cyclotron resonance (ECR) microwave plasma enhanced CVD. A high deposition rate of 25 A/sec and a light-to-dark conductivity ratio of 500,000 for a-Si:H films have been achieved by the ECR process using a pure silane plasma. ECR microwave plasmas have been analyzed by in situ optical emission spectroscopy (OES) and have shown a strong H-asterisk emission at 434 nm indicating higher chemical reactivity than RF plasmas. The linear correlation between the film deposition rate and the SiH-asterisk emission intensity of ECR silane plasma suggests that SiH-asterisk species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without RF bias power, respectively. The RF bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR deposited a-C:H films. Raman spectra of these films indicate that ECR deposition conditions can be optimized to produce diamond films.

Shing, Y. H.↗