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All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Initial assessment of multilayer silicon detectors for hard X-ray imaging

Silicon detectors with lower material budget, ultrafast readout and radiation hardness are under developments. These unique features make pixelized silicon sensors a good option for hard X-ray imaging. To verify the performance of spatial resolution and energy sensitivity of silicon sensors to hard X-rays, a two layer setup of Pixelink PL-D725MU sensors has been tested at the Argonne National Laboratory Advanced Photon Source (APS) ID-10 sector with 29.2 keV high photon flux (4.5 x 10(8) to 4.5 x 10(10) photons per second) X-rays. Better than 3 mu m spatial resolution and clear energy characterization have been achieved by both layers. Commercial CMOS sensors with superior spatial resolution could be used for phase contrast imaging in current synchrotrons. These studies pave the path for future multilayer ultrafast silicon sensor development with ns to sub-ns readout speeds in hard X-ray imaging at synchrotrons and XFEL beamlines.

Hard X-ray imaging↗
DOE OSTI2015

Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si ++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm 2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si ++ ions and 60 keV Li + ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Performance of position-sensitive resistive silicon detectors in the Forward Array Using Silicon Technology (FAUST)

The silicon telescopes of the Forward Array Using Silicon Technology (FAUST) have been recently upgraded with silicon detectors which use resistive charge-splitting to measure the position of charged particles. This is in addition to the measurement of the total energy that these charged particles deposit in the detector. The upgrade results in increased angular resolution with a much smaller number of signals than silicon strip detectors with similar resolution. Here, a novel method of calibration has been used to demonstrate the efficacy of these position-sensitive detectors, and the detectors have been used in a commissioning experiment.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Characterization of the Cherenkov Photon Background for Low-noise Silicon Detectors in Space

Future space observatories that seek to perform imaging and spectroscopy of faint astronomical sources will require ultra-low-noise detectors that are sensitive over a broad wavelength range. Silicon charge-coupled devices (CCDs), such as EMCCDs, skipper CCDs, multi-amplifier sensing CCDs, and single-electron sensitive read out CCDs have demonstrated the ability to detect and measure single photons from X-ray energies to near the silicon band gap (∼1.1 μm), making them candidate technologies for this application. Here, in this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic cosmic rays traversing a silicon detector. We present a model for Cherenkov photon production and absorption that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low-noise silicon detectors in space. We study how the Cherenkov background rate depends on detector thickness, variations in solar activity, and the contribution of heavy cosmic ray species (Z > 2). We find that for thick silicon detectors, such as those required to achieve high quantum efficiency at long wavelengths, the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds. We apply our Cherenkov background model to simulated spectroscopic observations of extra-solar planets, and we find that thick detectors continue to outperform their thinner counterparts at longer wavelengths despite a larger Cherenkov background rate. Furthermore, we find that minimal masking of cosmic-ray tracks continues to maximize the signal-to-noise ratio of very faint sources despite the existence of extended halos of Cherenkov photons.

Astronomical detectors↗
DOE OSTI2015

Angular independent silicon detector for dosimetry in external beam radiotherapy

Purpose: In this work, the “edgeless” silicon detector technology is investigated, in combination with an innovative packaging solution, to manufacture silicon detectors with negligible angular response. The new diode is also characterized as a dosimeter for radiotherapy with the aim to verify its suitability as a single detector for in vivo dosimetry as well as large area 2D array that does not require angular correction to their response. Methods: For the characterisation of the “edgeless-drop-in” detector technology, a set of samples have been manufactured with different sensitive areas (1 × 1 and 0.5 × 0.5 mm{sup 2}) and different thicknesses (0.1 and 0.5 mm) in four different combinations of top and peripheral p–n junction fabricated on p-type and n-type silicon substrates. The diode probes were tested in terms of percentage depth dose (PDD), dose rate, and linearity and compared to ion chambers. Measurements of the output factor have been compared to film. The angular response of the diodes probes has been tested in a cylindrical PMMA phantom, rotated with bidirectional accuracy of 0.25° under 10 × 10 cm{sup 2} 6 MV Linac photon beam. The radiation hardness has been investigated as well as the effect of radiation damage on the angular and dose rate response of the diode probes when irradiated with photons from a Co-60 gamma source up to dose of 40 kGy. Results: The PDDs measured by the edgeless detectors show an agreement with the data obtained using ion chambers within ±2%. The output factor measured with the smallest area edgeless diodes (0.5 × 0.5 mm{sup 2}—0.1 and 0.5 mm thick) matches EBT3 film to within 2% for square field size from 10 to 0.5 cm side equivalent distance. The dose rate dependence in a dose per pulse range of 0.9 × 10{sup −5}–2.7 × 10{sup −4} Gy/pulse was less than −7% and +300% for diodes fabricated on p-type and n-type substrates, respectively. The edgeless diodes fabricated on the p-type substrate demonstrated degradation of the response as a function of the irradiation dose within 5%–15%, while diodes on the n-type substrate show a variation of approximately 30% after 40 kGy. The angular response of all probes is minimal (within 2%) but the N on N and P on P configurations show the best performances with an angular dependence of ±1.0% between 0° and 180° in the transversal direction. In this configuration, the space charge region of the passive diode extends from the behind and sidewall toward the anode on the top providing beneficial electric field distribution in the peripheral area of the diode. Such performance has also been tested after irradiation by Co-60 up to 40 kGy with no measurable change in angular response. Conclusions: A new edgeless-drop-in silicon diode fabrication and packaging technology has been used to develop detectors that show no significant angular dependence in their response for dosimetry in radiation therapy. From the characterisation of the diodes, proposed in a wide range of different geometries and configurations, the authors recommend the P-on-P detectors in conjunction with “drop in” packaging technology as the candidate for further development as single diode probe or 2D diode array for dosimetry in radiotherapy.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

Cherenkov photon background for low-noise silicon detectors in space

Future space observatories dedicated to direct imaging and spectroscopy of extra-solar planets will require ultra-low-noise detectors that are sensitive over a broad range of wavelengths. Silicon charge-coupled devices (CCDs), such as EMCCDs, Skipper CCDs, and Multi-Amplifier Sensing CCDs, have demonstrated the ability to detect and measure single photons from ultra-violet to near-infrared wavelengths, making them candidate technologies for this application. In this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic charged particles traversing a silicon detector. In the intense radiation environment of space, energetic cosmic rays produce high-energy tracks and more extended halos of low-energy Cherenkov photons, which are detectable with ultra-low-noise detectors. We present a model of this effect that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low noise silicon detectors in space. We find that the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds that have previously been considered.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Silicon detectors for monitoring neutron beams in n-TOF beamlines

During 2014, the second experimental area (EAR2) was completed at the n-TOF neutron beam facility at CERN (n-TOF indicates neutron beam measurements by means of time of flight technique). The neutrons are produced via spallation, by means of a high-intensity 20 GeV pulsed proton beam impinging on a thick target. The resulting neutron beam covers the energy range from thermal to several GeV. In this paper, we describe two beam diagnostic devices, both exploiting silicon detectors coupled with neutron converter foils containing {sup 6}Li. The first one is based on four silicon pads and allows monitoring of the neutron beam flux as a function of the neutron energy. The second one, in beam and based on position sensitive silicon detectors, is intended for the reconstruction of the beam profile, again as a function of the neutron energy. Several electronic setups have been explored in order to overcome the issues related to the gamma flash, namely, a huge pulse present at the start of each neutron bunch which may blind the detectors for some time. The two devices were characterized with radioactive sources and also tested at the n-TOF facility at CERN. The wide energy and intensity range they proved capable of sustaining made them attractive and suitable to be used in both EAR1 and EAR2 n-TOF experimental areas, where they became immediately operational.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

High event rate analysis technique for the dual-axis duo-lateral position-sensitive silicon detectors of FAUST

The dual-axis duo-lateral (DADL) position-sensitive silicon detector was developed to obtain precise position and energy information for detected charged particles. The Forward Array Using Silicon Technology (FAUST) is currently equipped with 68 DADL detectors backed by CsI(Tl) scintillators for the study of charged particle correlations in heavy-ion collisions where precise position and energy information is essential. When conventional signal processing electronics were used for the DADL detectors, a position dependence of the measured energy as well as distortions in the calculated particle positions were observed. In previous work, waveforms from the detector after preamplification were studied to better understand the features that give rise to these distortions; therein, a waveform analysis technique was developed to improve the energy resolution and linearity in position reconstruction. However, the reading and writing of waveforms for an entire detector array limits data collection rates and adds significant burden in data storage and analysis speed. In this work, the integrators of a Struck SIS3316 ADC were utilized to process 228 Th source data to develop and optimize a new analysis method that captures the benefits of the waveform analysis technique while circumventing the waveform writing requirement. This integrator method – capable of 59 keV (FWHM) energy resolution – was used in the collection of 35 MeV/nucleon 28 Si + 12 C collision data using FAUST to investigate exotic decays of highly excited highly deformed nuclei. In this data, a position resolution of 0.4 mm (FWHM) was obtained for 25 MeV α-particles; for α-particles near this energy that originate from 8 Be ground state decays, a 8 Be ground state width of 30 keV (FWHM) was obtained. The impact of the energy-dependent DADL position resolution emergent from electronic noise on the quality of excited state measurement was modeled and compared to the experimental data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Machine learning for precise hit position reconstruction in Resistive Silicon Detectors

RSDs are LGAD silicon sensors with 100% fill factor, based on the principle of AC-coupled resistive read-out. Signal sharing and internal charge multiplication are the RSD key features to achieve picosecond-level time resolution and micron-level spatial resolution, thus making these sensors promising candidates as 4D-trackers for future experiments. This paper describes the use of a neural network to reconstruct the hit position of ionizing particles, an approach that can boost the performance of the RSD with respect to analytical models. The neural network has been trained in the laboratory and then validated on test beam data. The device-under-test in this work is a 450 μm-pitch matrix from the FBK RSD2 production, which achieved a resolution of about 65 μm at the DESY Test Beam Facility, a 50% improvement compared to a simple analytical reconstruction method, and a factor two better than the resolution of a standard pixel sensor of equal pitch size with binary read-out. The test beam result is compatible with the laboratory ones obtained during the neural network training, confirming the ability of the machine learning model to provide accurate predictions even in environments very different from the training one. Prospects for future improvements are also discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Characterization of Silicon Detector Readout Electronics

Configuration and calibration of the front-end electronics typical of many silicon detector configurations were investigated in a lab activity based on a pair of strip sensors interfaced with FSSR2 read-out chips and an FPGA. This simple hardware configuration, originally developed for a telescope at the Fermilab Test Beam Facility, was used to measure thresholds and noise on individual readout channels and to study the influence that different configurations of the front-end electronics had on the observed levels of noise in the system. An understanding of the calibration and operation of this small detector system provided an opportunity to explore the architecture of larger systems such as those currently in use at LHC experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Prediction of Leakage Current and Depletion Voltage in Silicon Detectors Under Extraterrestrial Radiation Conditions

Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain a critical element of detection of systems associated with extraterrestrial exploration. Silicon sensor leakage current and depletion voltage depend on the integrated fluence received by the sensor and on its thermal history during and after the irradiation process. For minimal assumptions on shielding and hence on the particle energy spectrum, and using published data on Martian ground temperature, we predict the leakage current density and the depletion voltage, as a function of time, of silicon sensors in transit to and deployed continuously on the Mars surface for a duration of up to 28 Earth-years, for several sensor geometries and a worst-case temperature scenario.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2016

Signal formation in irradiated silicon detectors

In this paper we present an initial study on the effects induced by radiation on the signal generated by a minimum ionising particle in silicon detector. The results are obtained by implementing in the simulation programme Weightfield2 (WF2) charge carrier trapping and non linear distribution of the electric field. Results of sample simulations are presented, along with a discussion of the limitations of the current approach and ideas for future improvements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data

This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the n+ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the n+ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between 2.5μm for 70–100 pad-pitch geometry and 17μm with 200–500 matrices, a factor of 10 better than what is achievable in binary read-out (bin size/12). Beam test data show a temporal resolution of ~40ps for 200 μm pitch devices, in line with the best performances of LGAD sensors at the same gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

A two dimensional silicon detectors array for quality assurance in stereotactic radiotherapy: MagicPlate-512

Purpose: Silicon diode arrays are commonly implemented in radiation therapy quality assurance applications as they have a number of advantages including: real time operation (compared to the film) and high spatial resolution, large dynamic range and small size (compared to ionizing chambers). Most diode arrays have detector pitch that is too coarse for routine use in small field applications. The goal of this work is to characterize the two-dimensional monolithic silicon diode array named “MagicPlate-512” (MP512) designed for QA in stereotactic body radiation therapy (SBRT) and stereotactic radio surgery (SRS). Methods: MP512 is a silicon monolithic detector manufactured on ap-type substrate. An array contains of 512 pixels with size 0.5 × 0.5 mm{sup 2} and pitch 2 mm with an overall dimension of 52 × 52 mm{sup 2}. The MP512 monolithic detector is wire bonded on a printed circuit board 0.5 mm thick and covered by a thin layer of raisin to preserve the silicon detector from moisture and chemical contamination and to protect the bonding wires. Characterization of the silicon monolithic diode array response was performed, and included pixels response uniformity, dose linearity, percent depth dose, output factor, and beam profiling for beam sizes relevant to SBRT and SRS and depth dose response in comparison with ionization chamber. Results: MP512 shows a good dose linearity (R{sup 2} = 0.998) and repeatability within 0.2%. The measured depth dose response for field size of 10 × 10 cm{sup 2} agreed to within 1.3%, when compared to a CC13 ionization chamber for depths in PMMA up to 30 cm. The output factor of a 6 MV Varian 2100EX medical linac beam measured by MP512 at the isocenter agrees to within 2% when compared to PTW diamond, Scanditronix point EDD-2 diode and MOSkin detectors for field sizes down to 1 × 1 cm{sup 2}. An over response of 4% was observed for square beam size smaller than 1 cm when compared to EBT3 films, while the beam profiles (FWHM) of MP512 match to within 2% the data measured by radiochromic film. Conclusions: The response of the 2D detector array, MP512, has been evaluated. The properties of the array demonstrated suitability for use as in phantom dosimeter for QA in SRS and SBRT. Although MP512 matches film measurements down to 1 × 1 cm{sup 2} well, it showed a discrepancy of 4% in the determination of output factors of beams smaller than 0.5 × 0.5 cm{sup 2} due to the field perturbation generated by the large amount of silicon surrounding the central diode. MP512 is highly capable of measuring beam size (FWHM) and has a discrepancy of less than 1.3% when compared to EBT3 film. A reduction in the detector pitch to less than 2 mm would improve the penumbra reconstruction accuracy at the cost readout electronics complexity.

07 ISOTOPE AND RADIATION SOURCES↗