Search NASA⌕ Search

SEARCH · Search NASA

Results for “Silicon Photomultipliers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Proton irradiation damage and annealing effects in ON Semiconductor J-series silicon photomultipliers

Silicon photomultipliers (SiPMs) have become popular light conversion devices in recent years due to their low bias voltage and sensitivity to wavelengths emitted from common scintillating materials. These properties make them particularly attractive for resource-constrained missions such as space-based detector applications. However, the space radiation environment is known to be particularly harsh on semiconductor devices, where high particle fluences can degrade performance over time. The radiation hardness of a particular SiPM, manufactured by ON Semiconductor (formally SensL), has yet to be studied with high energy protons, which are native to the space radiation environment. As such, to study these effects we have irradiated groups of two SiPMs to four different fluences of 800 MeV protons delivered by the accelerator at the Los Alamos Neutron Science Center. Fluences of 1.68 × 10 9 , 1.73 × 10 10 , 6.91 × 10 10 , and 1.73 × 10 11 protons cm –2 , and their corresponding estimated doses of 0.15, 1.55, 6.19, and 15.5 kRad, were chosen based on estimates of the potential exposure a SiPM might receive during an interplanetary space mission lasting 10 years. We report the effects these doses have on dark current and the self-annealing time.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Replacing photomultiplier tubes with silicon photomultipliers for nuclear safeguards applications

Photomultiplier tubes (PMTs) have been used for decades as the default light detection technology for scintillator-based radiation monitors. PMTs come with a handful of disadvantages, however, including large volume usage, fragility, high-voltage requirements, and susceptibility to magnetic fields. Arrays of silicon photomultipliers (SiPMs) are a possible alternative to PMTs providing similar performance while offering improvements in the areas listed. We focus on straightforward “drop-in replacement” evaluations by imposing a single channel output of the SiPM signal and a backend electronics data acquisition and analysis routine identical to that used for PMTs. In the realm of nuclear safeguards, the primary performance metric for gamma spectroscopy is detector resolution, and for neutron detection it is pulse shape discrimination (PSD) to separate neutron and gamma signals. In this work we present the results of replacing a PMT with a 2” x 2” SiPM array mounted, in turn, to the same 2” x 2” cylindrical sodium iodide (NaI) crystal. The ultimate comparison for this gamma spectrometry is confirmation of uranium enrichment standards, ranging from depleted uranium to 93% highly enriched uranium (HEU), by analyzing the resulting spectra with both a simple integral scaling in key energy regions of the spectrum, as well as with the NaIGEM software package. In addition to the gamma spectroscopy work, we will present the latest results on comparing the PSD capabilities of a 4” x 4” SiPM array to a 5” PMT. As with the gamma spectroscopy evaluations, the light detectors are mounted in turn to the same liter-scale organic scintillators. This neutron-focused work includes evaluation of prototype SiPM readout boards with a single output signal summed over 256 individual SiPM pixels, and evident tradeoffs between PSD capability and fast response.

42 ENGINEERING↗
DOE OSTI2020

Replacing photomultiplier tubes with silicon photomultipliers for nuclear safeguards applications

Photomultiplier tubes (PMTs) have been used for decades as the default light detection technology for scintillator-based radiation monitors. PMTs come with a handful of disadvantages, however, including large volume usage, fragility, high-voltage requirements, and susceptibility to magnetic fields. Arrays of silicon photomultipliers (SiPMs) are a possible alternative to PMTs providing similar performance while offering improvements in the areas listed. We focus on straightforward “drop-in replacement” evaluations by imposing a single channel output of the SiPM signal and a backend electronics data acquisition and analysis routine identical to that used for PMTs. In the realm of nuclear safeguards, the primary performance metric for gamma spectroscopy is detector resolution, and for neutron detection it is pulse shape discrimination (PSD) to separate neutron and gamma signals. In this work we present the results of replacing a PMT with a 2” x 2” SiPM array mounted, in turn, to the same 2” x 2” cylindrical sodium iodide (NaI) crystal. The ultimate comparison for this gamma spectrometry is confirmation of uranium enrichment standards, ranging from depleted uranium to 93% highly enriched uranium (HEU), by analyzing the resulting spectra with both a simple integral scaling in key energy regions of the spectrum, as well as with the NaIGEM software package. In addition to the gamma spectroscopy work, we will present the latest results on comparing the PSD capabilities of a 4” x 4” SiPM array to a 5” PMT. As with the gamma spectroscopy evaluations, the light detectors are mounted in turn to the same liter-scale organic scintillators. This neutron-focused work includes evaluation of prototype SiPM readout boards with a single output signal summed over 256 individual SiPM pixels, and evident tradeoffs between PSD capability and fast response.

Engineering - Instrumentation related to nuclear s↗
DOE OSTI2026

Characterization of Digital Silicon Photomultipliers

Digital Silicon photomultipliers (Digital SiPMs) have become an increasingly viable option for single-photon detection due to their compact size and precise timing and resolution. The following work characterizes the noise performance of a diSiPM designed and tested in-house at Fermilab. The SiPM consists of a 26x32 array of single-photon avalanche diode (SPAD) cells. Through the implementation of a shift register masking circuit, individual SPAD cells can be enabled and disabled at will, allowing for precise detection measurements of single columns (accumulator channels) and cells. The provided circuit design operates on voltage clock pulses and collects data on clock edges allowing for precise tuning of the data collection process by varying the clock frequency, pulse width, and integration period.

Shoemaker, Oliver [U. Chicago (main)]↗
DOE OSTI2021

Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. Here, the reflectivity is determined to be 25–36 % at an angle of incidence of 20° for the four samples and increases to up to 65 % at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

(pin diodes, APDs, SiPMs, G-APDs, CCDs, EBCCDs, EM↗
DOE OSTI2026

Digital Silicon Photomultiplier Chip Testing

Silicon Photomultipliers (SiPMs) are highly sensitive photodetectors. Traditional analog SiPMs require complex external readout electronics. Digital SiPMs (dSiPMs) include digital readout circuitry directly on-chip, offering superior timing resolution, reduced power consumption and compact size, pixel-level masking for active noise reduction. The primary objectives of this study are to, verify digital logic integrity of the shift registers used for controlling the pixel masking circuit, and determine the dark count rate of individual pixels as a function of bias voltage and clock frequency. I observe and explain behavior of the shift register and counting circuit.

Graham, Bennett [U. Chicago (main)]↗
DOE OSTI2022

Advanced antireflection for back-illuminated silicon photomultipliers to detect faint light

Silicon photomultipliers have attracted increasing attention for detecting low-density light in both scientific research and practical applications in recent years; yet the photon losses due to reflection on the light-sensitive planar silicon surface considerably limit its photon detection efficiency. Here we demonstrate an advanced light trapping feature by developing the multi-layer antireflection coatings and the textured silicon surface with upright random nano-micro pyramids, which significantly reduces the reflection of faint light in a wide spectrum, from ultraviolet to infrared. Integrating this advanced photon confinement feature into next-generation back-illuminated silicon photomultiplier would increase the photon detection efficiency with significantly lower reflection and much more active areas. This advanced design feature offers the back-illuminated silicon photomultiplier broader application opportunities exemplified in the emerging scenarios such as nuclear medical imaging, light detection and ranging for autonomous driving, detection of scintillation light in ionizing radiation, as well as high energy physics.

42 ENGINEERING↗
DOE OSTI2024

Characterization of Silicon Photomultiplier Photon Detection Efficiency at Liquid Nitrogen Temperature

The detection of individual photons at cryogenic temperatures is of interest to many experiments searching for physics beyond the Standard Model. Silicon photomultipliers (SiPMs) are often deployed in liquid argon or liquid xenon to detect scintillation light either directly or after it has been wavelength-shifted. Maximizing the photon detection efficiency (PDE) of the SiPMs used in these experiments optimizes the sensitivity to new physics; however, the PDEs of commercial SiPMs, although well known at room temperature, are not well characterized at the cryogenic temperatures at which many experiments operate them. Here we present results from an experimental setup that measures the photon detection efficiencies of silicon photomultipliers at liquid nitrogen temperature, 77 K. Results from a KETEK PM3325-WB-D0 and a Hamamatsu S13360-3050CS silicon photomultiplier — of R&D interest to the LEGEND experiment — exhibit a decrease in photon detection efficiency greater than 20% at liquid nitrogen temperature relative to room temperature for 562 nm light.

Cryogenic detectors↗
DOE OSTI2020

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. In this work, we report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Silicon Photomultipliers Coupled to Scintillators With the Emission Maximum at 550 nm

A majority of the silicon photomultipliers (SiPMs) are sensitive to blue and near-ultraviolet (NUV) photons that are not optimized for scintillators with the emission maximum at wavelengths longer than 500 nm. The red–green–blue (RGB) SiPM is developed for the maximum photon detection efficiency (PDE) at 550 nm, which is a good match for some high-light-yield scintillators, such as CsI:Tl (CsI) and Gd 1.5 Y 1.5 Ga 2 Al 3 O 12 :Ce (GYGAG). Comparisons are made for the performance of these scintillators coupled to the RGB SiPM and a blue-sensitive SiPM. Because it takes tens of nanoseconds for the microcells to recharge after registering a photon hit, the linearity of these scintillation detectors was studied for high-energy gammas where numerous scintillation photons are generated. In addition, the energy resolution of the 662-keV gamma emitted by 137 Cs was measured for temperatures between –20 °C and 50 °C. The nonlinearity was observed above 1 MeV for all measurements, and however, it can be corrected by energy calibration using a third-degree polynomial. For CsI, the energy resolution is better with the blue-sensitive SiPM because of the lower dark count rate (DCR). In contrast, GYGAG coupled to the RGB SiPM has a better energy resolution for temperatures below 30 °C because of the well-matched emission spectrum and PDE distribution. Nevertheless, the advantage disappears for temperatures above 30 °C due to the higher DCR. It would be useful to further develop the RGB SiPM with a lower DCR and higher operating temperatures.

42 ENGINEERING↗
DOE OSTI2024

Measurement of energy resolution with the NEXT-White silicon photomultipliers

The NEXT-White detector, a high-pressure gaseous xenon time projection chamber, demonstrated the excellence of this technology for future neutrinoless double beta decay searches using photomultiplier tubes (PMTs) to measure energy and silicon photomultipliers (SiPMs) to extract topology information. This analysis uses $^{83m}$Kr data from the NEXT-White detector to measure and understand the energy resolution that can be obtained with the SiPMs, rather than with PMTs. The energy resolution obtained of (10.9 ± 0.6)%, full-width half-maximum, is slightly larger than predicted based on the photon statistics resulting from very low light detection coverage of the SiPM plane in the NEXT-White detector. The difference in the predicted and measured resolution is attributed to poor corrections, which are expected to be improved with larger statistics. Furthermore, the noise of the SiPMs is shown to not be a dominant factor in the energy resolution and may be negligible when noise subtraction is applied appropriately, for high-energy events or larger SiPM coverage detectors. These results, which are extrapolated to estimate the response of large coverage SiPM planes, are promising for the development of future, SiPM-only, readout planes that can offer imaging and achieve similar energy resolution to that previously demonstrated with PMTs.[graphic not available: see fulltext]

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Scintillation and cherenkov photon counting detectors with analog silicon photomultipliers for TOF-PET

Objective. Standard signal processing approaches for scintillation detectors in positron emission tomography (PET) derive accurate estimates for 511 keV photon time of interaction and energy imparted to the detection media from aggregate characteristics of electronic pulse shapes. The ultimate realization of a scintillation detector for PET is one that provides a unique timestamp and position for each detected scintillation photon. Detectors with these capabilities enable advanced concepts for three-dimensional (3D) position and time of interaction estimation with methods that exploit the spatiotemporal arrival time kinetics of individual scintillation photons. Approach. In this work, we show that taking into consideration the temporal photon emission density of a scintillator, the channel density of an analog silicon photomultiplier (SiPM) array, and employing fast electronic readout with digital signal processing, a detector that counts and timestamps scintillation photons can be realized. To demonstrate this approach, a prototype detector was constructed, comprising multichannel electronic readout for a bismuth germanate (BGO) scintillator coupled to an SiPM array. Main Results. In proof-of-concept measurements with this detector, we were able to count and provide unique timestamps for 66% of all optical photons, where the remaining 34% (two-or-more-photon pulses) are also independently counted, but each photon bunch shares a common timestamp. We show this detector concept can implement 3D positioning of 511 keV photon interactions and thereby enable corrections for time of interaction estimators. The detector achieved 17.6% energy resolution at 511 keV and 237 ± 10 ps full-width-at-half-maximum coincidence time resolution (CTR) (fast spectral component) versus a reference detector. We outline the methodology, readout, and approach for achieving this detector capability in first-ever, proof-of-concept measurements for scintillation photon counting detector with analog silicon photomultipliers. Significance. The presented detector concept is a promising design for large area, high sensitivity TOF-PET detector modules that can implement advanced event positioning and time of interaction estimators, which could push state-of-the-art performance.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2022

Modification of a Silicon Photomultiplier for Reduced High Temperature Dark Count Rate

In this work we present a novel method for improving the high-temperature performance of silicon photomultipliers (SiPMs) via focused ion beam (FIB) modification of individual microcells. The literature suggests that most of the dark count rate (DCR) in a SiPM is contributed by a small percentage (<5%) of microcells. By using a FIB to electrically deactivate this relatively small number of microcells, we believe we can greatly reduce the overall DCR of the SiPM at the expense of a small reduction in overall photodetection efficiency, thereby improving its high temperature performance. In this report we describe our methods for characterizing the SiPM to determine which individual microcells contribute the most to the DCR, preparing the SiPM for FIB, and modifying the SiPM using the FIB to deactivate the identified microcells.

42 ENGINEERING↗
DOE OSTI2022

A novel silicon photomultiplier readout architecture for low-light applications

In this article we describe the photon detection readout electronics for the nEDM@SNS experiment. The chosen "photon counting" architecture, which utilizes high-efficiency silicon photomultipliers (SiPMs) and is appropriate for low-light applications, allows the use of a relatively high SiPM operating voltage. This maximizes photon detection efficiency and minimizes gain/efficiency voltage-dependence while eliminating direct optical cross-talk.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Enhanced Surface Passivation by Atomic Layer Deposited Al 2 O 3 for Ultraviolet Sensitive Silicon Photomultipliers

Here, we describe a superior passivation of p-type (p + ) Si surface by Al 2 O 3 thin film that is synthesized by plasma-assisted atomic layer deposition for ultraviolet sensitive silicon photomultipliers (SiPM), compared to conventional SiO 2 and SiN x passivation schemes. The superiority of Al 2 O 3 passivation is due to not only a sufficiently low interface defect density but also a high density of built-in negative charges. A 7 nm thin Al 2 O 3 film can yield an emitter saturation current density of ~8 fA/cm 2 on high sheet resistance p + layer, compared to ~60 and ~1480 fA/cm 2 for thermal SiO 2 and SiN x passivation. This superior surface passivation allows the photon-generated carriers to have higher probabilities to reach the high-field region to trigger an avalanche event. In addition, Al 2 O 3 thin film provides very low values of effective surface recombination velocity on low resistivity n-type and p-type Si surfaces, which can lead to well-passivated surface features on guard ring and trench isolation regions of SiPM. These demonstrate the potential of Al 2 O 3 thin film passivation to improve quantum efficiency and thus photo-detection efficiency of ultraviolet sensitive SiPM with p + /n - /n/n + structure.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Temperature-dependent calibration procedures for the silicon photomultiplier readout of the cosmic ray veto detector for the Mu2e experiment

The cosmic ray veto detector for the Mu2e experiment consists of scintillation bars embedded with wavelength-shifting fibers and read out by silicon photomultipliers (SiPMs). Here, in this manuscript, the calibration procedures of the SiPMs are described including corrections for the temperature dependence of their light yield. These corrections are needed as the SiPMs are not kept at a constant temperature due to the complexity and cost of implementing a cooling system on such a large detector. Rather, it was decided to monitor the temperature to allow the appropriate corrections to be made. The SiPM temperature dependence has been measured in a dedicated experiment and the calibration procedures were validated with data from production detectors awaiting installation at Fermilab.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Quality assurance test of silicon photomultipliers and electronic boards for STAR event plane detector

The event plane detector (EPD), installed in the Solenoid Tracker at the Relativistic Heavy-Ion Collider located at the Brookhaven National Laboratory is a plastic scintillator-based device that measures the reaction centrality and event plane in the forward region of the relativistic heavy-ion collisions. We used silicon photomultiplier (SiPM) arrays to detect the photons produced in the scintillator via the fiber connection. Signals from the SiPM arrays were amplified by the front-end electronic (FEE) board, and sent to the analog-to-digital converter (ADC) boards for further processing via the receiver (RX) board. The full EPD system consisted of 24 super-sectors (SSs); each SS was equipped with two SiPM boards, two FEE boards and two RX boards, and they corresponded to 744 readout channels. All these boards were mass produced at the University of Science and Technology of China, with a dedicated quality assurance (QA) procedures applied to identify any problems before deployment. This article describes the details of the QA method and the related test system. As a result, the QA test results are presented along with the discussions.

EPD↗
DOE OSTI2021

Characterization of Silicon-Photomultipliers for a Cosmic Muon Veto detector

A Cosmic Muon Veto (CMV) detector using extruded scintillators is being designed around the mini-Iron Calorimeter detector at the transit campus of the India-based Neutrino Observatory, Madurai for measuring its efficiency at shallow depth underground experiments. The scintillation signal is transmitted through a Wavelength Shifting (WLS) fibre and readout by Hamamatsu Silicon-Photomultipliers (SiPMs). A Light Emitting Diode (LED) system is included on the front-end readout for in-situ calibration of the gain of each SiPM. A characterization system was developed for the measurement of gain and choice of the overvoltage (V ov ) of SiPMs using the LED as well as a cosmic muon telescope. The V ov is obtained by studying the noise rate, the gain of the SiPM, and the muon detection efficiency. In case of any malfunction of the LED system during the operation, the SiPM can also be calibrated with the noise data as well as using radioactive sources. Furthermore, this paper describes the basic characteristics of the SiPM and the comparison of the calibration results using all three methods, as well as the V ov of the SiPMs and muon selection criteria for the veto detector.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗