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SmAl is Tetraauricupride structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. Sm is bonded in a body-centered cubic geometry to eight equivalent Al atoms. All Sm–Al bond lengths are 3.18 Å. Al is bonded in a body-centered cubic geometry to eight equivalent Sm atoms.
SmAl crystallizes in the orthorhombic Pbcm space group. The structure is three-dimensional. there are two inequivalent Sm sites. In the first Sm site, Sm is bonded in a 2-coordinate geometry to eight Al atoms. There are a spread of Sm–Al bond distances ranging from 3.13–3.43 Å. In the second Sm site, Sm is bonded in a 6-coordinate geometry to eight Al atoms. There are a spread of Sm–Al bond distances ranging from 3.13–3.57 Å. There are two inequivalent Al sites. In the first Al site, Al is bonded in a 10-coordinate geometry to eight Sm and two equivalent Al atoms. Both Al–Al bond lengths are 2.75 Å. In the second Al site, Al is bonded to eight Sm and four Al atoms to form a mixture of distorted corner, edge, and face-sharing AlSm8Al4 cuboctahedra. Both Al–Al bond lengths are 2.85 Å.
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The time-dependent governing acoustic-difference equations and boundary conditions are developed and solved for sound propagation in an axisymmetric (cylindrical) hard-wall duct without flow and with spinning acoustic modes. The analysis begins with a harmonic sound source radiating into a quiescent duct. This explicit iteration method then calculates stepwise in real time to obtain the steady solutions of the acoustic field. The transient method did not converge to the steady-state solution for cutoff acoustic duct modes. This has implications as to its use in a variable-area duct, where modes may become cutoff in the smal-area portion of the duct. For single cutoff mode propagation the steady-state impedance boundary condition produced acoustic reflections during the initial transient that caused finite instabilities in the numerical calculations. The stability problem is resolved by reformulating the exit boundary condition. Example calculations show good agreement with exact analytical and numerical results for forcing frequencies above, below, and nearly at the cutoff frequency.
We report the following results from a decade of infrared radiometry of Io: (1) The average global heat flow is more than approx. 2.5 W/sq.m, (2) large warm (less than or equal to 200 K) volcanic regions dominate the global heat flow, (3) smal high-temperature (greater than or = 300 K) 'hotspots' contribute little to the average heat flow, (4) thermal anomalies on the leading hemisphere contribute about half of the heat flow, (5) a substantial amount of heat is radiated during Io's night, (6) high-temperature (greater than or = 600 K) 'outbursts' occurred during approx. 4% of the nights we observed, (7) 'Loki' is the brightest, persistent, infrared emission feature, and (8) some excess emission is always present at the longitude of Loki, but its intensity and other characteristics change between apparitions. Observations of Io at M(4.8 micrometer), 8.7 micrometer, N(10 micrometer), and Q(20 micrometer) with the Infrared Telescope Facility presented here were collected during nine apparitions between 1983 and 1993. These measurements provide full longitudinal coveraged as well as an eclipse observation and the detection of two outbursts. Reflected sunlight, passive thermal emission, and radiation from thermal anomalies all contribute to the observed flux densities. We find that a new thermophysical model is required to match all the data. Two key elements of this model are (1) a 'thermal reservoir' unit which lowers daytime temperatures, and (2) the 'thermal pedestal effect' which shifts to shorter wavelengths the spectral emission due to the reradiation of solar energy absorbed by the thermal anomalies. The thermal anomalies are modeled with a total of 10 source components at five locations. Io's heat flow is the sum of the power from these components.
The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth the Al atoms do not diffuse from substrate into the film and the films with thickness up to 100 nm exhibit the excellent direct current (DC) properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R(sub S)). The low value of surface resistance R(sub S)(75 GHz, 77K) = 20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.