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Electrical Tuning of Tin-Vacancy Centers in Diamond

Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (Sn-V - ) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1 K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising tuning techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study the electrical tuning of Sn-V - centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7 GHz. We observe both quadratic and linear dependence on the applied electric field. Further, we also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Materials Data on VSn3 by Materials Project

VSn3 is beta Cu3Ti-like structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. V is bonded to twelve equivalent Sn atoms to form VSn12 cuboctahedra that share corners with six equivalent VSn12 cuboctahedra, corners with twelve equivalent SnV4Sn8 cuboctahedra, edges with eighteen equivalent SnV4Sn8 cuboctahedra, faces with eight equivalent VSn12 cuboctahedra, and faces with twelve equivalent SnV4Sn8 cuboctahedra. There are six shorter (3.12 Å) and six longer (3.19 Å) V–Sn bond lengths. Sn is bonded to four equivalent V and eight equivalent Sn atoms to form distorted SnV4Sn8 cuboctahedra that share corners with four equivalent VSn12 cuboctahedra, corners with fourteen equivalent SnV4Sn8 cuboctahedra, edges with six equivalent VSn12 cuboctahedra, edges with twelve equivalent SnV4Sn8 cuboctahedra, faces with four equivalent VSn12 cuboctahedra, and faces with sixteen equivalent SnV4Sn8 cuboctahedra. There are a spread of Sn–Sn bond distances ranging from 3.00–3.27 Å.

36 MATERIALS SCIENCE↗