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Electrical Tuning of Tin-Vacancy Centers in Diamond

Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (Sn-V - ) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1 K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising tuning techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study the electrical tuning of Sn-V - centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7 GHz. We observe both quadratic and linear dependence on the applied electric field. Further, we also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Materials Data on VSn2 by Materials Project

VSn2 is Khatyrkite-like structured and crystallizes in the orthorhombic Fddd space group. The structure is three-dimensional. V is bonded in a 10-coordinate geometry to two equivalent V and eight Sn atoms. Both V–V bond lengths are 2.75 Å. There are a spread of V–Sn bond distances ranging from 2.80–2.88 Å. There are two inequivalent Sn sites. In the first Sn site, Sn is bonded in a 4-coordinate geometry to four equivalent V atoms. In the second Sn site, Sn is bonded in a 4-coordinate geometry to four equivalent V atoms.

36 MATERIALS SCIENCE↗

Materials Data on V3Sn by Materials Project

V3Sn crystallizes in the cubic Pm-3n space group. The structure is three-dimensional. V is bonded in a 6-coordinate geometry to two equivalent V and four equivalent Sn atoms. Both V–V bond lengths are 2.48 Å. All V–Sn bond lengths are 2.78 Å. Sn is bonded to twelve equivalent V atoms to form a mixture of edge and face-sharing SnV12 cuboctahedra.

36 MATERIALS SCIENCE↗

Materials Data on V3Sn by Materials Project

V3Sn crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. there are two inequivalent V sites. In the first V site, V is bonded to eight V and four equivalent Sn atoms to form distorted VV8Sn4 cuboctahedra that share corners with four equivalent SnV12 cuboctahedra, corners with fourteen VV8Sn4 cuboctahedra, edges with six equivalent SnV12 cuboctahedra, edges with twelve VV8Sn4 cuboctahedra, faces with four equivalent SnV12 cuboctahedra, and faces with sixteen VV8Sn4 cuboctahedra. There are a spread of V–V bond distances ranging from 2.53–3.12 Å. There are two shorter (2.83 Å) and two longer (2.89 Å) V–Sn bond lengths. In the second V site, V is bonded to eight equivalent V and four equivalent Sn atoms to form distorted VV8Sn4 cuboctahedra that share corners with four equivalent SnV12 cuboctahedra, corners with fourteen VV8Sn4 cuboctahedra, edges with six equivalent SnV12 cuboctahedra, edges with twelve equivalent VV8Sn4 cuboctahedra, faces with four equivalent SnV12 cuboctahedra, and faces with sixteen VV8Sn4 cuboctahedra. There are two shorter (2.83 Å) and two longer (2.89 Å) V–Sn bond lengths. Sn is bonded to twelve V atoms to form SnV12 cuboctahedra that share corners with six equivalent SnV12 cuboctahedra, corners with twelve VV8Sn4 cuboctahedra, edges with eighteen VV8Sn4 cuboctahedra, faces with eight equivalent SnV12 cuboctahedra, and faces with twelve VV8Sn4 cuboctahedra.

36 MATERIALS SCIENCE↗

Materials Data on VSn3 by Materials Project

VSn3 is beta Cu3Ti-like structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. V is bonded to twelve equivalent Sn atoms to form VSn12 cuboctahedra that share corners with six equivalent VSn12 cuboctahedra, corners with twelve equivalent SnV4Sn8 cuboctahedra, edges with eighteen equivalent SnV4Sn8 cuboctahedra, faces with eight equivalent VSn12 cuboctahedra, and faces with twelve equivalent SnV4Sn8 cuboctahedra. There are six shorter (3.12 Å) and six longer (3.19 Å) V–Sn bond lengths. Sn is bonded to four equivalent V and eight equivalent Sn atoms to form distorted SnV4Sn8 cuboctahedra that share corners with four equivalent VSn12 cuboctahedra, corners with fourteen equivalent SnV4Sn8 cuboctahedra, edges with six equivalent VSn12 cuboctahedra, edges with twelve equivalent SnV4Sn8 cuboctahedra, faces with four equivalent VSn12 cuboctahedra, and faces with sixteen equivalent SnV4Sn8 cuboctahedra. There are a spread of Sn–Sn bond distances ranging from 3.00–3.27 Å.

36 MATERIALS SCIENCE↗