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Results for “Soft thresholding”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Numerical study of the wave-vector dependence of the electron interband impact ionization rate in bulk GaAs

Ensemble Monte Carlo calculations of the electron interband impact ionization rate in bulk GaAs are presented using a wave-vector (k)-dependent formulation of the ionization transition rate. The transition rate is evaluated through the use of numerically generated wavefunctions determined via a k-p calculation within the first two conduction bands at numerous points within a finely spaced three-dimensional grid in k space. The transition rate is determined to be greatest for states within the second conduction band. Is is found that the interband impact ionization transition rate in bulk GaAs is best characterized as having an exceedingly soft threshold energy. As a consequence, the dead space, defined as the distance over which the ionization probability for a given carrier is assumed to be zero, is estimated to be much larger than that estimated using a harder threshold. These results have importance in the design of the multiquantum-well avalanche photodiodes.

Wang, Yang↗
NASA NTRS1994

Numerical Study of the Wave-Vector Dependence of the Electron Interband Impact Ionization Rate in Bulk GaAs

Ensemble Monte Carlo calculations of the electron interband impact ionization rate in bulk GaAs are presented using a wave-vector (k)-dependent formulation of the ionization transition rate. The transition rate is evaluated through use of numerically generated wavefunctions determined via a k-p calculation within the first two conduction bonds at numerous points within a finely spaced three-dimensional grid in k space. The transition rate is determined to be greatest for states within the second conduction band. It is found that the interband impact ionization transition rate in bulk GaAs is best characterized as having an exceedingly "soft" threshold energy. As a consequence, the dead space, defined as the distance over which the ionization probability for a given carrier is assumed to be zero, is estimated to be-much larger than that estimated using a "harder" threshold. These results have importance in the design of multiquantum-well avalanche photodiodes.

Wang, Yang↗
NASA NTRS1975

Space vehicle Viterbi decoder

The design and fabrication of an extremely low-power, constraint-length 7, rate 1/3 Viterbi decoder brassboard capable of operating at information rates of up to 100 kb/s is presented. The brassboard is partitioned to facilitate a later transition to an LSI version requiring even less power. The effect of soft-decision thresholds, path memory lengths, and output selection algorithms on the bit error rate is evaluated. A branch synchronization algorithm is compared with a more conventional approach. The implementation of the decoder and its test set (including all-digital noise source) are described along with the results of various system tests and evaluations. Results and recommendations are presented.

Source record↗
NASA NTRS1995

Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate formulation

The hole initiated impact ionization rate in bulk silicon and GaAs is calculated using a numerical formulation of the impact ionization transition rate incorporated into an ensemble Monte Carlo simulation. The transition rate is calculated from Fermi's golden rule using a two-body screened Coulomb interaction including a wavevector dependent dielectric function. It is found that the effective threshold for hole initiated ionization is relatively soft in both materials, that the split-off band dominates the ionization process in GaAs. and that no clear dominance by any one band is observed in silicon, though the rate out of the light hole band is greatest.

Oguzman, Ismail H.↗
NASA NTRS1995

The soft X-ray turnoff of Nova Muscae 1983

Nova GQ Muscae 1983 was detected by ROSAT as a luminous 'supersoft' X-ray source in 1992, nearly a decade after outburst. Further, this is the only classical postnova known to have maintained constant luminosity on a timescale predicted by theoretical models. Follow-up observations were made with the ROSAT position-sensitive proportional counter in 1993 January and September, and complemented with B-band photometry taken in 1993 January. By 1993 January, the X-ray count rate had declined by a factor of 17, while there was neither an appreciable decrease in the optical magnitude nor a change in the amplitude of modulation. In 1993 September the soft X-ray flux was below the ROSAT threshold limit, implying a decrease of a factor greater than or equal to 30 in the count rate. This decline can be interpreted by the turnoff of nuclear processes due to the complete consumption of the residual hydrogen-rich envelope. However, the optical luminosity of the system is not simply coupled to the X-ray luminosity (e.g., through reprocessing).

Shanley, L.↗
NASA NTRS1995

Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

In this paper, calculations of the hole initiated interband impact ionization rate in bulk silicon and GaAs are presented based on an ensemble Monte Carlo simulation with the inclusion of a wave-vector-dependent numerical transition rate formulation. The ionization transition rate is determined for each of the three valence bands, heavy, light, and split-off, using Fermi's golden rule with a two-body, screened Coulomb interaction. The dielectric function used within the calculation is assumed to be wave-vector-dependent. Calculations of the field-dependent impact ionization rate as well as the quantum yield are presented. It is found from both the quantum yield results and examination of the hole distribution function that the effective threshold energy for hole initiated impact ionization is relatively soft, similar to that predicted for the corresponding electron initiated ionization events occur more frequently than either heavy or split-offf initiated ionization events in bulk silicon over the applied electric field strengths examined here, 250-500 kV/cm. Conversely,in GaAs, the vast majority of hole initated ionization events originate from holes within the split-off band.

Oguzman, Ismail H.↗
NASA NTRS1998

Neural Network-Based Sensor Validation for Turboshaft Engines

Sensor failure detection, isolation, and accommodation using a neural network approach is described. An auto-associative neural network is configured to perform dimensionality reduction on the sensor measurement vector and provide estimated sensor values. The sensor validation scheme is applied in a simulation of the T700 turboshaft engine in closed loop operation. Performance is evaluated based on the ability to detect faults correctly and maintain stable and responsive engine operation. The set of sensor outputs used for engine control forms the network input vector. Analytical redundancy is verified by training networks of successively smaller bottleneck layer sizes. Training data generation and strategy are discussed. The engine maintained stable behavior in the presence of sensor hard failures. With proper selection of fault determination thresholds, stability was maintained in the presence of sensor soft failures.

Moller, James C.↗
NASA NTRS1992

The coolest DA white dwarfs detected at soft X-ray wavelengths

New soft X-ray/EUV photometric observations of the DA white dwarfs KPD 0631 + 1043 = WD 0631 + 107 and PG 1113 + 413 = WD 1113 + 413 are analyzed. Previously reported soft X-ray detections of three other DAs and the failure to detect a fourth DA in deep Exosat observations are investigated. New ground-based spectra are presented for all of the objects, with IUE Ly-alpha spectra for some. These data are used to constrain the effective temperatures and surface gravities. The improved estimates of these parameters are employed to refer a photospheric He abundance for the hotter objects and to elucidate an effective observational low-temperature threshold for the detection of pure hydrogen DA white dwarfs at soft X-ray wavelengths.

Kidder, K. M.↗
NASA NTRS1994

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS1994

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS1973

Signal-to-noise ratios in coherent soft limiters

Expressions for the output signal-to-noise power ratio of a bandpass soft limiter followed by a coherent detection device are presented and discussed. It is found that a significant improvement in the output signal-to-noise ratio at low input SNRs can be achieved by such soft limiters as compared to hard limiters. This indicates that the soft limiter may be of some use in the area of threshold extension. Approximation methods for determining output signal-to-noise spectral densities are also presented.

Lesh, J. R.↗
NASA NTRS1974

Signal-to-noise ratios in coherent soft limiters

Expressions for the output signal-to-noise power ratio of a bandpass soft limiter followed by a coherent detection device are presented and discussed. It is found that a significant improvement in the output signal-to-noise ratio (SNR) at low input SNR's can be achieved by such soft limiters as compared to hard limiters. This indicates that the soft limiter may be of some use in the area of threshold extension. Approximation methods for determining output signal-to-noise spectral densities are also presented.

Lesh, J. R.↗
NASA NTRS1984

A summary of JPL single event upset test data from May 1982, through January 1984

A summary of single event upset data for 42 device types (including RAMs, 4-bit slices, microprocessors, 4-bit counters, and flip-flops) studied at 11 different accelerator tests (performed chiefly with the Berkeley 88-inch cyclotron and the Cal Tech Van de Graaff) is presented. All bipolar and NMOS RAMs were found to be SEU sensitive, some with very low LET thresholds. Some CMOS or CMOS/SOS RAMs were hard; and the CMOS microprocessors were hard, but the bipolar and NMOS microprocessors were soft. Several devices were found to exhibit a cross section that depends strongly on LET, even when the LET is well above the LET threshold. A ranking of hardness is presented for the logic devices tested.

Nichols, D. K.↗
NASA NTRS1992

Impulsive phase Fe K-alpha emission in a flare of 1989 March

Evidence for enhanced Fe K-alpha line emission that is coincident (to within 15 s) of an intense hard X-ray (greater than 50 keV) burst is presented on the basis of observations of the Fe K-alpha soft X-ray line made with the SMM. Three different models for explaining the K-alpha enhancement are investigated, namely, photoexcitation by soft X-ray thermal bremsstrahlung radiation from an isothermal source, collisional excitation by nonthermal thick-target electrons, and photoexcitation by a nonthermal hard X-ray flux distribution which extends with a power-law spectrum down to the Fe K-alpha ionization threshold at 7.1 keV. It is found that, to within the limits of isothermal temperature and emission measure set by soft X-ray observations, the thermal photoexcitation model cannot reproduce satisfactorily the intensity of enhanced K-alpha emission during the hard X-ray impulsive phase. The impulsive phase K-alpha flux exceeds that predicted by the thermal photoexcitation model by about 3 sigma. The implications of these results for the nonthermal interpretation of impulsive hard X-ray bursts in solar flares are discussed.

Zarro, D. M.↗
NASA NTRS2003

How Can The SN-GRB Time Delay Be Measured?

The connection between SNe and GRBs, launched by SN 1998bw / GRB 980425 and clinched by SN 2003dh / GRB 030329-with the two GRBs differing by a factor of approximately 50000 in luminosity-so far suggests a rough upper limit of approximately 1-2 days for the delay between SN and GRB. Only four SNe have had nonnegligible coverage in close coincidence with the initial explosion, near the W shock breakout: two Qpe II, and two Type IC, SN 1999ex and SN 1998bw. For the latter, only a hint of the minimum between the UV maximum and the radioactivity bump served to help constrain the interval between SN and GRB. Swift GRB alerts may provide the opportunity to study many SNe through the UV breakout phase: GRB 980425 look dikes -apparently nearby, low- luminosity, soft-spectrum, long-lag GRBs-accounted for half of BATSE bursts near threshold, and may dominate the Swift yield near threshold, since it has sensitivity to lower energies than did BATSE. The SN to GRB delay timescale should be better constrained by prompt UV/optical observations alerted by these bursts. Definitive delay measurements may be obtained if long-lag bursters are truly nearby: The SNe/GRBs could emit gravitational radiation detectable by LIGO-II if robust non-axisymmetric bar instabilities develop during core collapse, and/or neutrino emission may be detectable as suggested by Meszaros et al.

Norris, J. P.↗
NASA NTRS1988

A CMOS matrix for extracting MOSFET parameters before and after irradiation

An addressable matrix of 16 n- and 16 p-MOSFETs was designed to extract the dc MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs, each with four different geometries that can be biased independently. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Co-60 irradiation results for the n-MOSFETs showed a threshold-voltage shift of -3 mV/krad(Si), whereas the p-MOSFETs showed a shift of 21 mV/krad(Si). The worst-case threshold-voltage shift occurred for the n-MOSFETs, with a gate bias of 5 V during the anneal. For the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5 V on the gate during irradiation. Co-60 test results for other parameters are also presented.

Blaes, B. R.↗
NASA NTRS1990

Photoelectron energy spectra of opaque photocathodes in the extreme and far ultraviolet

Measurements of the EUV quantum detection efficiency (QDE) of opaque RbBr, CsBr, and KBr photocathodes are described and investigations of their photoemission characteristics over the 44-1560 A wavelength range are reported. The results show that high QDEs can be obtained in the EUV. Narrow QDE peaks at soft X-ray wavelengths occur at slightly different wavelengths for each of the materials studied. The long-wavelength thresholds vary according to the material band gap. Data on the photoemission from the photocathode layer on the microchannel plate interchannel web area are used to determine the number and energy distribution of the emitted photoelelectrons as a function of wavelength.

Siegmund, Oswald H. W.↗
NASA NTRS2000

Analysis and Enhancement of Low-Light-Level Performance of Photodiode-Type CMOS Active Pixel Images Operated with Sub-Threshold Reset

Noise in photodiode-type CMOS active pixel sensors (APS) is primarily due to the reset (kTC) noise at the sense node, since it is difficult to implement in-pixel correlated double sampling for a 2-D array. Signal integrated on the photodiode sense node (SENSE) is calculated by measuring difference between the voltage on the column bus (COL) - before and after the reset (RST) is pulsed. Lower than kTC noise can be achieved with photodiode-type pixels by employing "softreset" technique. Soft-reset refers to resetting with both drain and gate of the n-channel reset transistor kept at the same potential, causing the sense node to be reset using sub-threshold MOSFET current. However, lowering of noise is achieved only at the expense higher image lag and low-light-level non-linearity. In this paper, we present an analysis to explain the noise behavior, show evidence of degraded performance under low-light levels, and describe new pixels that eliminate non-linearity and lag without compromising noise.

Pain, Bedabrata↗