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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Design and Commission of Solid State Switch Driver in SLAC Subbooster Modulator

The LINAC sub-booster modulator is a pulsed power supply to provide a 30kV pulse to drive a klystron in SLAC LINAC. It has utilized vacuum tetrode as pulse switch for more than 60 years. With the vacuum tetrode availability becoming less and its cost surging, a natural choice is to use solid state switch in this pulsed power modulator. To commission solid state switch in LINAC sub-booster modulator, a driver board is designed to drive a BEHLKE HTS-LC2 series MOSFET based switches. The design concept and some concerns in design will be presented. The driver board is universal for all HTS-LC2 series switches because they share the same driver signals and connections. After the driver is commissioned, two AI systems are introduced to design one core part of the driver, the results are presented here. During the commission of the driver board in the LINAC sub-booster modulators, some problems happened and were addressed.

AI Circuit Design↗

Electromagnetic Propulsion

The design and development of an Electromagnetic Propulsion is discussed. Specific Electromagnetic Propulsion Topics discussed include: (1) Technology for Pulse Inductive Thruster (PIT), to design, develop, and test of a multirepetition rate pulsed inductive thruster, Solid-State Switch Technology, and Pulse Driver Network and Architecture; (2) Flight Weight Magnet Survey, to determine/develop light weight high performance magnetic materials for potential application Advanced Space Flight Systems as these systems develop; and (3) Magnetic Flux Compression, to enable rapid/robust/reliable omni-planetary space transportation within realistic development and operational costs constraints.

Schafer, Charles↗

Distributed solid state programmable thermostat/power controller

A self-contained power controller having a power driver switch, programmable controller, communication port, and environmental parameter measuring device coupled to a controllable device. The self-contained power controller needs only a single voltage source to power discrete devices, analog devices, and the controlled device. The programmable controller has a run mode which, when selected, upon the occurrence of a trigger event changes the state of a power driver switch and wherein the power driver switch is maintained by the programmable controller at the same state until the occurrence of a second event.

Alexander, Jane C.↗

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗

Basic coaxial mass driver construction and testing

A basic coaxial mass driver has been constructed by a group of students to verify performance predictions in the acceleration range envisaged for the first lunar device. The bucket is guided by four copper tubes which also supply direct current excitation for its single aluminum coil, and is accelerated by twenty coaxial coils along a 2 m track, followed by a deceleration section. The coils are individually energized by electrolytic photoflash capacitors triggered by solid state switches on the basis of bucket position.

Fine, K.↗

Adaptive Time-Division Multiplexing Driving System for Solid State Lighting with Multiple Tunable Channels

Next generation solid state lighting enables unlimited control of light and serve much broader functions beyond the basic lighting for illuminance. The emerging lighting for productivity, well-being, healthcare, and growth have revolutionized the scope of lighting. To empower this unlimited controllability, a multi-channel tunable power-electronics driver is essential but has not been satisfactorily addressed so far. Existing solutions are lossy, large, and expensive, due to introduction of additional buck power conversion stages. This paper proposes a time-division multiplexing (TDM) LED driving system which eliminates those buck stages. The proposed design can directly pair with off-the-shelf pulse width modulated (PWM) controllers and since it inherits entire feature sets, it can achieve low loss at standby and at dimmed condition. The simple analog implementation avoids usage of expensive DSPs/MCU. GaN’s high switching frequency capability can push up the multiplexing frequency so a GaN-based flyback was built and proved the concept.

Xue, Lincoln↗

The 30 GHz solid state amplifier for low cost low data rate ground terminals

This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPATT amplifier not only met or exceeded all the program objectives, but also possesses the ability to operate in the pulse mode, which was not called for in the original contract requirements. The ability to operate in the pulse mode is essential for TDMA (Time Domain Multiple Access) operation. An output power of 20 W was achieved with a 1-dB instantaneous bandwidth of 260 MHz. The amplifier has also been tested in pulse mode with 50% duty for pulse lengths ranging from 200 ns to 2 micro s with 10 ns rise and fall times and no degradation in output power. This pulse mode operation was made possible by the development of a stable 12-diode power combiner/amplifier and a single-diode pulsed driver whose RF output power was switched on and off by having its bias current modulated via a fast-switching current pulse modulator. Essential to the overall amplifier development was the successful development of state-of-the-art silicon double-drift IMPATT diodes capable of reproducible 2.5 W CW output power with 12% dc-to-RF conversion efficiency. Output powers of as high as 2.75 W has been observed. Both the device and circuit design are amenable to low cost production.

Ngan, Y. C.↗