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Results for “Solid-State Power Amplifiers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Evaluation of the JPL X-band 32 element active array

Tests performed on an X-band 32-element active array are described. Antenna pattern characteristics of the array were tested in its standard operating mode as well as several degraded performance modes, including failures of 1, 2, 3, 4, 8, 16, and 31 elements. Additionally, the array was characterized with the addition of a metallic shroud, and also characterized versus rf drive level and at a single off-axis electronic beamsteered position. Characterization was performed on several of the 3/4-watt, three-stage, X-band solid-state power amplifier modules. The characterization included swept amplitude response, amplitude and phase versus temperature from -20 to +60 C, and intermodulation distortion of selected modules. The array is described and conclusions and recommendations based upon the experience and results achieved are included.

Boreham, J. F.↗
NASA NTRS1972

S-band microcircuit power amplifier

Research, design, development, and fabrication of a two-stage, solid-state, microcircuit power amplifier operating in the 2.25 GHz region of the S-band are summarized. Output is typically 7.0 watts for an input of approximately 400 mw. Input stage is an MSC 3001 transistor; output stage is an MSC 3005 transistor. Input VSWR is 1.4:1.0, or less. Efficiency of 33.3 percent or more is achieved. Second and third harmonic suppression is 30 db. Operating power is 28 VDC. The entire unit has a length of 3.80 inches, a width of 2.08 inches, and a height of 1.00 inch.

Mcgann, W. E.↗
NASA NTRS1972

Development of a 20-W solid-state S-band power amplifier

As an alternative to the use of traveling wave tube amplifiers in spacecraft with long life mission requirements, a solid state S band amplifier was developed. A solid state amplifier with an output of 20 W at 2295 MHz, a dc/RF efficiency of 38%, and a gain of 27 dB was developed. The physical and electrical performance of the solid state amplifier are described.

Vandercapellen, A. G.↗
NASA NTRS1975

The solid-state Ku-band power amplifier

A survey of IMPATT diodes and negative resistance amplifiers is presented. The first phase of the amplifier effort is discussed in which a single diode reflection amplifier delivering 0.5 watt at 15 GHz with 10-dB gain over a 1-GHz band was developed. The design of a dominant mode resonant combiner is described along with the characterization of the IMPATT diodes. Results are given on the complete amplifier and on the thermal and graceful failure characteristics of the unit.

Geller, B. D.↗
NASA NTRS1972

Solid state ku-band power amplifiers, phase 1

A proposed solid-state K sub u-band power amplifier utilizing a circularly symmetric array of IMPATT diodes mounted in a single radial line power combiner is discussed and its performance predicted. The proposed amplifier configuration consists of a TM sub 030 mode radial line cavity containing 20 IMPATT diodes, with separate input and output ports provided by a ferrite circulator. Conventional IMPATT amplifier techniques preclude the achievement of gain, power output, efficiency, and IMP suppression specifications simultaneously; there fore, several novel techniques with the potential of reducing the intermodulation product level are discussed.

Cohn, M.↗
NASA NTRS1980

Beamed microwave power transmitting and receiving subsystems radiation characteristics

Measured characteristics of the spectrum of typical converters and the distribution of radiated Radio Frequency (RF) energy from the terminals (transmitting antenna and rectenna) of a beamed microwave power subsystem are presented for small transmitting and receiving S-band (2.45 GHz) subarrays. Noise and harmonic levels of tube and solid-state RF power amplifiers are shown. The RF patterns and envelope of a 64 element slotted waveguide antenna are given for the fundamental frequency and harmonics through the fifth. Reflected fundamental and harmonic patterns through the fourth for a 42 element rectenna subarray are presented for various dc load and illumination conditions. Bandwidth measurements for the waveguide antenna and rectenna are shown.

Dickinson, R. M.↗
NASA NTRS1980

Satellite Power Systems (SPS) concept definition study. Volume 6: In-depth element investigation

The fabrication parameters of GaAs MESFET solid-state amplifiers considering a power added conversion efficiency of at least 80% and power gains of at least 10dB were determined. Operating frequency was 2.45 GHz although 914 MHz was also considered. Basic circuit to be considered was either Class C or Class E amplification. Two modeling programs were utilized. The results of several computer calculations considering differing loads, temperatures, and efficiencies are presented. Parametric data in both tabular and plotted form are presented.

Hanley, G. M.↗
NASA NTRS1979

A 4-W 56-dB gain microstrip amplifier at 15 GHz utilizing GaAs FET's and IMPATT diodes

Performance results and design considerations are presented for an all solid-state Ku-band power amplifier which is feasible for use in PM communication systems for airborne or spacecraft transmitter applications. A six-stage GaAs FET preamplifier and a driver and balanced power amplifier utilizing GaAs IMPATT diodes operating in the injection locked oscillator mode are discussed. For high power and efficiency Schottky-Read IMPATT's with low-high-low doping profiles are employed. For improved reliability the IMPATT's incorporate a TiW barrier metallization to retard degradation of the IMPATT's. Results of accelerated life testing of the IMPATT devices are also presented.

Sokolov, V.↗
NASA NTRS1979

Solid-state X-band Combiner Study

The feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.

Pitzalis, O., Jr.↗
DOE OSTI2025

On operation and control of CW magnetrons for superconducting accelerators

CW magnetrons, developed for industrial RF heaters, were suggested to feed RF cavities of superconducting accelerators due to higher efficiency and lower cost of RF power than provide traditionally used klystrons, IOTs or solid-state amplifiers. RF amplifiers driven by a master oscillator serve as coherent RF sources. CW magnetrons are regenerative RF auto generators with a huge regenerative gain. This causes regenerative instability with a notable noise when a magnetron operates as an auto generator i.e., with the anode voltage above the threshold of self-excitation. Traditionally, an injection locking by a small signal is used for phase stabilization of magnetrons. In this case CW magnetrons with the injection-locked (coherent) oscillations generate a notable level of noise. This may preclude use of CW magnetrons in this mode in the Superconducting RF (SRF) accelerators. This paper reviews PIC modeling and previously obtained experimental results for the operation and control of CW magnetrons, which led to the development of techniques most suitable for various SRF accelerators using forced RF oscillation of magnetrons, when the magnetron is launched by an injected forcing signal, and regenerative noise is suppressed.

Kazakevich, G. [MUONS Inc., Batavia] (ORCID:000000↗
DOE OSTI2026

Progress Towards RF Conditioning of Low-Loss Couplers for a Conduction-Cooled Cryomodule

This work presents current progress on the conditioning of two new 25 kW couplers optimized for use in a compact, conduction-cooled SRF cryomodule. A connecting waveguide, previously used for conditioning the 805 MHz SNS couplers, was altered for use at 915 MHz. The necessary modifications were determined via RF modeling, while thermal analysis results identified additional cooling requirements during RF conditioning and provided insight about potential higher-power operation. Initial low-power conditioning will be performed with a 2.5 kW solid-state amplifier, with plans to use an industrial magnetron for RF conditioning at 25 kW in the near future.

Stilin, N. [Thomas Jefferson National Accelerator ↗
DOE OSTI2026

PROGRESS TOWARDS RF CONDITIONING OF LOW-LOSS COUPLERS FOR A CONDUCTION-COOLED CRYOMODULE

This work presents current progress on the conditioning of two new 25 kW couplers optimized for use in a compact, conduction-cooled SRF cryomodule. A connecting waveguide, previously used for conditioning the 805 MHz SNS couplers, was altered for use at 915 MHz. The necessary modifications were determined via RF modeling, while thermal analysis results identified additional cooling requirements during RF conditioning and provided insight about potential higher-power operation. Initial low-power conditioning will be performed with a 2.5 kW solid-state amplifier, with plans to use an industrial magnetron for RF conditioning at 25 kW in the near future.

Wilson, Christiana [Thomas Jefferson National Acce↗
NASA NTRS1980

A reliable solid-state RF transfer switch

Highly-reliable lightweight solid-state RF (radio frequency) transfer switch replaces less reliable mechanical switch in handling medium power for S-band power amplifier.

Dodd, R. W.↗
NASA NTRS1970

Log amplifier instrument measures physiological biopotentials over wide dynamic range

To record biopotentials with extreme dynamic ranges, biopotential inputs are capacitatively coupled to a miniature, low power, solid-state signal conditioner consisting of a two-stage differential preamplifier that has a low noise figure. The ouput of the preamplifier uses diodes to provide an overall gain which is nearly logarithmic.

Kado, R. T.↗
NASA NTRS1970

A new solid-state logarithmic radiometer

Combination of temperature-compensated logarithmic amplifiers and p-i-n photodiodes operating in zero-bias mode provides lightweight radiometer for detecting spectral intensities encompassing more than three decades over a range of at least 300 to 800 nanometers at low power levels.

Burrous, C. N.↗
DOE OSTI2025

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Compensating for Amplifier Non-Linearity in a SEL Controller

The Self-Excited Loop (SEL) architecture, used in some continuous-wave (CW) superconducting linacs, relies on a positive feedback mechanism that requires carefully defined operating limits to ensure stable operation. These limits are typically derived from amplifier calibration, which characterizes the relationship between forward power and DAC drive. However, amplifier non-linearity often prevents a simple linear fit of this characteristic, introducing errors that can compromise stability. To address this, we present a modified calibration procedure that incorporates amplifier non-linearity into the SEL framework. The approach is validated with test data from a 32 kW solid-state amplifier (SSA) and a cavity emulator developed for the Fermilab PIP-II linac.

Raman, S. [Fermilab] (ORCID:0009000735937206)↗