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Results for “Solid-State Power Amplifiers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Evaluation of the JPL X-band 32 element active array

Tests performed on an X-band 32-element active array are described. Antenna pattern characteristics of the array were tested in its standard operating mode as well as several degraded performance modes, including failures of 1, 2, 3, 4, 8, 16, and 31 elements. Additionally, the array was characterized with the addition of a metallic shroud, and also characterized versus rf drive level and at a single off-axis electronic beamsteered position. Characterization was performed on several of the 3/4-watt, three-stage, X-band solid-state power amplifier modules. The characterization included swept amplitude response, amplitude and phase versus temperature from -20 to +60 C, and intermodulation distortion of selected modules. The array is described and conclusions and recommendations based upon the experience and results achieved are included.

Boreham, J. F.↗
NASA NTRS1980

Emerging SPS Concepts

Four technologies were evaluated to determine their effect on Satellite Power System concepts. Two of these technologies, solid-state power amplifiers and magnetrons, are replacements for the Klystrons used for dc to RF conversion on the satellite. A third technology, laser power transmission, transmits the energy at laser frequencies rather than microwave frequencies. The fourth technology, multibandgap solar cells, has the promise of significantly increased solar to dc conversion efficienty as compared to the reference-concept silicon and gallium arsenide solar cells. The design characteristics of concepts resulting from application of these technologies are summarized.

Hanley, G.↗
NASA NTRS1972

S-band microcircuit power amplifier

Research, design, development, and fabrication of a two-stage, solid-state, microcircuit power amplifier operating in the 2.25 GHz region of the S-band are summarized. Output is typically 7.0 watts for an input of approximately 400 mw. Input stage is an MSC 3001 transistor; output stage is an MSC 3005 transistor. Input VSWR is 1.4:1.0, or less. Efficiency of 33.3 percent or more is achieved. Second and third harmonic suppression is 30 db. Operating power is 28 VDC. The entire unit has a length of 3.80 inches, a width of 2.08 inches, and a height of 1.00 inch.

Mcgann, W. E.↗
NASA NTRS1972

Development of a 20-W solid-state S-band power amplifier

As an alternative to the use of traveling wave tube amplifiers in spacecraft with long life mission requirements, a solid state S band amplifier was developed. A solid state amplifier with an output of 20 W at 2295 MHz, a dc/RF efficiency of 38%, and a gain of 27 dB was developed. The physical and electrical performance of the solid state amplifier are described.

Vandercapellen, A. G.↗
NASA NTRS1975

The solid-state Ku-band power amplifier

A survey of IMPATT diodes and negative resistance amplifiers is presented. The first phase of the amplifier effort is discussed in which a single diode reflection amplifier delivering 0.5 watt at 15 GHz with 10-dB gain over a 1-GHz band was developed. The design of a dominant mode resonant combiner is described along with the characterization of the IMPATT diodes. Results are given on the complete amplifier and on the thermal and graceful failure characteristics of the unit.

Geller, B. D.↗
NASA NTRS1972

Solid state ku-band power amplifiers, phase 1

A proposed solid-state K sub u-band power amplifier utilizing a circularly symmetric array of IMPATT diodes mounted in a single radial line power combiner is discussed and its performance predicted. The proposed amplifier configuration consists of a TM sub 030 mode radial line cavity containing 20 IMPATT diodes, with separate input and output ports provided by a ferrite circulator. Conventional IMPATT amplifier techniques preclude the achievement of gain, power output, efficiency, and IMP suppression specifications simultaneously; there fore, several novel techniques with the potential of reducing the intermodulation product level are discussed.

Cohn, M.↗
NASA NTRS1980

Beamed microwave power transmitting and receiving subsystems radiation characteristics

Measured characteristics of the spectrum of typical converters and the distribution of radiated Radio Frequency (RF) energy from the terminals (transmitting antenna and rectenna) of a beamed microwave power subsystem are presented for small transmitting and receiving S-band (2.45 GHz) subarrays. Noise and harmonic levels of tube and solid-state RF power amplifiers are shown. The RF patterns and envelope of a 64 element slotted waveguide antenna are given for the fundamental frequency and harmonics through the fifth. Reflected fundamental and harmonic patterns through the fourth for a 42 element rectenna subarray are presented for various dc load and illumination conditions. Bandwidth measurements for the waveguide antenna and rectenna are shown.

Dickinson, R. M.↗
NASA NTRS1980

Satellite Power Systems (SPS) concept definition study. Volume 6: In-depth element investigation

The fabrication parameters of GaAs MESFET solid-state amplifiers considering a power added conversion efficiency of at least 80% and power gains of at least 10dB were determined. Operating frequency was 2.45 GHz although 914 MHz was also considered. Basic circuit to be considered was either Class C or Class E amplification. Two modeling programs were utilized. The results of several computer calculations considering differing loads, temperatures, and efficiencies are presented. Parametric data in both tabular and plotted form are presented.

Hanley, G. M.↗
NASA NTRS1980

Solid-state alternatives for the Solar Power Satellite

A solid-state transmitter at S-band frequencies will allow many low-power antenna array elements fed directly by the solid-state amplifier modules to combine power for transmission to earth in space. Two configurations, one the separate antenna and the other a sandwich concept are discussed. The results of two small hardware development studies are presented.

Leopold, L.↗
NASA NTRS1981

High-power solid-state microwave transmitter

Transmitter phases outputs from individual amplifier modules then combines them in multielement array feed antenna. Size and power capability of system are variable for radar and small-angle scanning applications.

Boreham, J. D.↗
NASA NTRS1979

A 4-W 56-dB gain microstrip amplifier at 15 GHz utilizing GaAs FET's and IMPATT diodes

Performance results and design considerations are presented for an all solid-state Ku-band power amplifier which is feasible for use in PM communication systems for airborne or spacecraft transmitter applications. A six-stage GaAs FET preamplifier and a driver and balanced power amplifier utilizing GaAs IMPATT diodes operating in the injection locked oscillator mode are discussed. For high power and efficiency Schottky-Read IMPATT's with low-high-low doping profiles are employed. For improved reliability the IMPATT's incorporate a TiW barrier metallization to retard degradation of the IMPATT's. Results of accelerated life testing of the IMPATT devices are also presented.

Sokolov, V.↗
NASA NTRS1979

Solid-state X-band Combiner Study

The feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.

Pitzalis, O., Jr.↗
NASA NTRS1980

A reliable solid-state RF transfer switch

Highly-reliable lightweight solid-state RF (radio frequency) transfer switch replaces less reliable mechanical switch in handling medium power for S-band power amplifier.

Dodd, R. W.↗
NASA NTRS1970

Log amplifier instrument measures physiological biopotentials over wide dynamic range

To record biopotentials with extreme dynamic ranges, biopotential inputs are capacitatively coupled to a miniature, low power, solid-state signal conditioner consisting of a two-stage differential preamplifier that has a low noise figure. The ouput of the preamplifier uses diodes to provide an overall gain which is nearly logarithmic.

Kado, R. T.↗
NASA NTRS1970

A new solid-state logarithmic radiometer

Combination of temperature-compensated logarithmic amplifiers and p-i-n photodiodes operating in zero-bias mode provides lightweight radiometer for detecting spectral intensities encompassing more than three decades over a range of at least 300 to 800 nanometers at low power levels.

Burrous, C. N.↗
NASA NTRS1981

Development of design, qualification, screening, and application requirements for plastic encapsulated solid-state devices for space applications

Test data were collected on 1035 plastic encapsulated devices and 75 hermetically scaled control group devices that were purchased from each of five different manufacturers in the categories of (1) low power Schottsky TTL (bipolar) digital circuits; (2) CMOS digital circuits; (3) operational amplifier linear circuits; and (4) NPN transistors. These parts were subjected to three different initial screening conditions, then to extended life testing, to determine any possible advantages or trends for any particular screen. Several tests were carried out in the areas of flammability testing, humidity testing, high pressure steam (auroclave) testing, and high temperature storage testing. Test results are presented. Procurement and application considerations for use of plastic encapsulated semiconductors are presented and a statistical analysis program written to study the log normal distributions resulting from life testing is concluded.

Source record↗