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At least 19 records

Sintering of BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta) with/without SrTiO3 Dopant

The perovskite composition, BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta), displays excellent protonic conduction at high temperatures making it a desirable candidate for hydrogen separation membranes. This paper reports on the sintering behavior of BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta) powders doped with SrTiO3. Two methods were used to synthesize BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta) powders: (1) solid state reaction and (2) wet chemical co-precipitation. Co-precipitated powder crystallized into the perovskite phase at 1000 C for 4 hrs. Complete reaction and crystallization of the perovskite phase by solid state was achieved by calcining at 1200 C for 24 hrs. Solid state synthesis produced a coarser powder with an average particle size of 1.3 microns and surface area of 0.74 sq m/g. Co-precipitation produced a finer powder with a average particle size of 65 nm and surface area of 14.9 sq m/g. Powders were doped with 1, 2, 5, and 10 mole % SrTiO3. Samples were sintered at 1450 C, 1550 C and 1650 C. SrTiO3 enhances sintering, optimal dopant level is different for powders synthesized by solid state and co-precipitation. Both powders exhibit similar grain growth behavior. Dopant levels of 5 and 10 mole % SrTiO3 significantly enhances the grain size.

Dynys, F.

Erase-mode recording characteristics of photochromic CaF2, SrTiO3, and CaTiO3 crystals.

Erase-mode optical recording characteristics of photochromic crystal wafers of CaF2:La,Na; CaF2:Ce,Na; SrTiO3:Ni,Mo,Al; and CaTiO3:Ni,Mo have been measured. An argon laser operating at 5145 A was used for both optical recording and optical readout. Sensitometric curves of optical-density change versus logarithm of exposure are shown for a number of erase-beam intensities between 0.2 mW/sq cm and 2 W/sq cm. In this range, time-intensity reciprocity holds for the CaF2 materials but fails for the titanates, particularly at low intensities. The dependences of sensitivity, gamma, and maximum transmission contrast ratio on wafer thickness and material are discussed. Wafers of SrTiO3, CaTiO3, and CaF2 exhibiting approximately equal maximum contrast ratios have relative sensitivities approximately in the ratio 5:2:1, respectively, at an erase intensity of 1 W/sq cm.

Duncan, R. C., Jr.

Crystalline orientations of Tl2Ba2Ca2Cu3O(x) grains on MgO, SrTiO3, and LaAlO3 substrates

Crystalline orientations of Tl2Ba2Ca2Cu3O(x) grains in magnetron sputtered films on MgO (001), SrTiO3 (001), and LaAlO3 (001) substrates were investigated by scanning electron microscopy. In contrast to the nearly single crystalline films on the lattice matched substrates SrTiO3 and LaAlO3, films on the MgO (001) substrate, being polycrystalline in nature, exhibit several preferred in-plane grain orientations. These orientations agree well with a simplified theory of near-coincidence site lattices between Tl2Ba2Ca2Cu3O(x) and MgO.

Liou, S. H.

Protonic Conduction of BaCe0.85YO. 1503 Doped with SrTiO3

Reformers based on ceramic membrane technology potentially offer hydrogen production that is comparable to the cost of fossil fuels. Protonic conducting ceramic with the chemical formula AB03 offers the promise of highly selective hydrogen separation at intermediate temperature (400-800 C). Among different perovskite-type oxides, BaCe03 and SrCe03 based compositions show high protonic conductivities but strong resistance to densification. X-ray diffraction studies on sintered specimens of BaCe0.85Y0.1503-6 show multi-phase formation which was found to show dependence upon powder synthesis method. Doping with SrTiO3 suppresses multi-phase formation and enhances grain growth. Conductivity measurements in temperature range of 200 to 1000 C were performed by ac impedance spectroscopy under dry and wet conditions. Sintering behavior, phase formation and conductivity results will be reported.

Dynys, Frederick W.

Photoelectrolysis of water at high current density - Use of ultraviolet laser excitation

The behavior of TiO2 and SrTiO3 photoanodes in cells for the photoelectrolysis of H2O has been investigated for high-intensity 351-,364-nm excitation from an Ar ion laser. Intensities up to 380 W/sq cm have been used. For TiO2 a small amount of surface decomposition is found after irradiation at high intensity, whereas SrTiO3 undergoes no detectable changes. Current-voltage properties for both electrodes are essentially independent of light intensity up to the level of 380 W/sq cm, and there is little if any change in quantum efficiency for electron flow. Photocurrent densities have been shown to exceed 5 A/sq cm for O2 evolution. Data show that the energy storage rate associated with the SrTiO3 photoelectrolysis can exceed 30 W/sq cm; this represents the highest demonstrated rate of sustained optical-to-chemical energy conversion.

Bocarsly, A. B.

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Valco, George J.

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

Warner, J. D.

Construction and performance of a high-temperature-superconductor composite bolometer

A high-Tc superconducting bolometer has been constructed using a YBa2Cu3O(x) thin-film meander line 20 microns wide and 76,000 microns long, deposited on a SrTiO3 substrate. Radiation is absorbed by a thin film of Bi with well-characterized absorption properties deposited on a Si substrate in contact with the SrTiO3. At 1.8 Hz the measured bolometer response to a 500-K blackbody is 5.2 V/W (820 V/W extrapolated to dc). The impact of apparent nonohmic behavior at the transition is discussed, as are ways of reducing the observed 1/f noise. The response time is 32 s and is dominated by the heat capacity of the SrTiO3 substrate.

Brasunas, J. C.

Microwave properties and characterization of co-evaporated BSCCO thin films

An extensive characterization of Bi-Sr-Ca-Cu-O (BSCCO) thin films deposited by co-evaporation on LaAlO3 and SrTiO3 substrates was performed. The films had a T(sub c) (R = O) of approximately 78 K, and were predominantly c-axis oriented, with critical current densities (J(sub c)) at 4.5 K of 1.6 x 10(exp 6) and 1.1 x 10(exp 6) A cm(sup -2), for the samples on SrTiO3 and LaAlO3, respectively. The microwave properties of the films were examined by three techniques. The complex conductivity sigma(sub *) = sigma(sub 1) - j(sigma(sub 2)) and the magnetic penetration depth (A) were measured by power transmission at 30.6 GHz; the surface resistance (R(sub s)) was measured using a cavity resonator at 58.9 GHz, and the transmission line losses were determined by measuring the quality factor (Q) of a linear microstrip resonator at 10.4 and 20.2 GHz. The complex conductivity for the film on LaAlO3 was determined to be (2.0-j10) x 10(exp 5) S/m at 77 K. It was observed that in the superconducting state sigma(sub 1) deviates from both the Bardeen-Cooper-Schrieffer (BCS) theory and the two-fluid model. Values of lambda were found to be approximately 2.0 and 1.1 microns at 77 K and 20 K respectively, and were obtained for the film on LaAlO3. The value of lambda at 20 K was approximately three times larger than that of BSCCO single crystals. R(sub s) values of 865 and 1391 mOmega were obtained for the films on SrTiO3 and LaAlO3, respectively, at 77 K and 58.9 GHz. Unloaded Q factors at 20 K of approximately 1100 and 800 at 10.4 and 20.2 GHz respectively, were measured for the BSCCO resonator. Unloaded Q values of 290 and 405 at 20 K were obtained at 10.4 GHz and 20.2 GHz respectively, for an all gold (Au) resonator.

Miranda, F. A.

High-Temperature Superconducting/Ferroelectric Structures for Tunable Microwave Components

At the NASA Lewis Research Center, ferroelectric films, such as SrTiO3 and Ba(x)Sr(1-x)TiO3, are being used in conjunction with YBa2Cu3O(7-delta) high-temperature superconducting (HTS) thin films to fabricate tunable microwave components, such as filters, varactors, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a dc electric field as well as on the low microwave losses exhibited by the high-temperature superconducting films relative to their conventional conductor counterparts. (For example, the surface resistance for a YBa2Cu3O(7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper at the same frequency and temperature.) SrTiO3 and Ba(x)Sr(1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa2Cu3O(7-delta), thus enabling the growth of highly textured YBa2Cu3O(7-delta) films with high critical current densities on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa2Cu3O(7-delta) film. Our efforts have been concentrated so far in determining the deposition parameters required for optimal ferroelectric thin-film growth (i.e., maximum tunability and lowest loss) and in investigating different varactor configurations to determine which geometry is the most advantageous in terms of tunability, losses, and required bias for a given communication application. For example, we have observed that for optimized SrTiO3 films in a parallel plate capacitor, tunabilities of up to 47 percent and dissipation losses (tan d) of 0.05 are attainable at 1 MHz , 80 K, and within the 0- to 5-V bias range. In contrast, for an interdigital configuration, tunabilities of up to 70 percent and tan d ranging from 0.015 to 0.001 (depending on bias) have been observed at 1 MHz and 77 K within the 0- to 100-V bias range. Efforts are underway to use these results in developing tunable receiver front-end preselect filters as well as in low-phase noise, tunable local oscillators for K-band applications. These components represent a hitherto unavailable technology to meet the stringent performance requirements of foreseeable satellite and wireless communication systems (e.g., bandwidth, in-band insertion losses, out-of-band rejection, and noise, amongst others) in a more advantageous fashion than with currently available technology (e.g., dielectric-filled cavity and waveguide filters, and dielectric resonator oscillators). Prototypes of high-temperature superconducting/ferroelectric tunable components such as a low-phase noise K-band local oscillator, a preselect C-band filter, and a low-loss K-band phase shifter are under development at NASA Lewis.

Miranda, Felix A.

Correlation of photocurrent-voltage curves with flat-band potential for stable photoelectrodes for the photoelectrolysis of water

Using the differential capacitance technique, the flat-band potential of n-type TiO2, SnO2, SrTiO3, KTaO3, and KTa(0.77)Nb(0.23)O3 electrodes has been determined as a function of pH in aqueous electrolytes. Plots of flat-band potential vs. pH are linear in all cases and have a slope of approximately 0.059 V/pH unit. The flat-band potential correlates nicely with the onset for photoanodic currents corresponding to O2 evolution at the n-type semiconductor and H2 at the dark Pt cathode. The ordering of flat-band potentials at a given pH is SrTiO3 of the order of KTaO3 of the order of KTa(0.77)Nb(0.23)O3 greater than TiO2 greater than SnO2 (SnO2 most positive vs a saturated calomel electrode).

Bolts, J. M.

Status of photoelectrochemical production of hydrogen and electrical energy

The efficiency for conversion of electromagnetic energy to chemical and electrical energy utilizing semiconductor single crystals as photoanodes in electrochemical cells was investigated. Efficiencies as high as 20 percent were achieved for the conversion of 330 nm radiation to chemical energy in the form of hydrogen by the photoelectrolysis of water in a SrTiO3 based cell. The SrTiO3 photoanodes were shown to be stable in 9.5 M NaOH solutions for periods up to 48 hours. Efficiencies of 9 percent were measured for the conversion of broadband visible radiation to hydrogen using n-type GaAs crystals as photoanodes. Crystals of GaAs coated with 500 nm of gold, silver, or tin for surface passivation show no significant change in efficiency. By suppressing the production of hydrogen in a CdSe-based photogalvanic cell, an efficiency of 9 percent was obtained in conversion of 633 nm light to electrical energy. A CdS-based photogalvanic cell produced a conversion efficiency of 5 percent for 500 nm radiation.

Byvik, C. E.

Sequentially evaporated thin Y-Ba-Cu-O superconductor films: Composition and processing effects

Thin films of YBa2Cu3O(7-beta) have been grown by sequential evaporation of Cu, Y, and BaF2 on SrTiO3 and MgO substrates. The onset temperatures were as high as 93 K while T sub c was 85 K. The Ba/Y ratio was varied from 1.9 to 4.0. The Cu/Y ratio was varied from 2.8 to 3.4. The films were then annealed at various times and temperatures. The times ranged from 15 min to 3 hr, while the annealing temperatures used ranged from 850 C to 900 C. A good correlation was found between transition temperature (T sub c) and the annealing conditions; the films annealed at 900 C on SrTiO3 had the best T sub c's. There was a weaker correlation between composition and T sub c. Barium poor films exhibitied semiconducting normal state resistance behavior while barium rich films were metallic. The films were analyzed by resistance versus temperature measurements and scanning electron microscopy. The analysis of the films and the correlations are reported.

Valco, George J.

High-Temperature Superconducting/Ferroelectric, Tunable Thin-Film Microwave Components

At the NASA Lewis Research Center, ferroelectric films such as SrTiO3 and Ba(sub x)Sr(sub 1-x)TiO3, are being used in conjunction with YBa(sub 2)Cu(sub 3)O(sub 7-delta) high-temperature superconducting thin films to fabricate tunable microwave components such as filters, phase shifters, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a direct-current electric field, as well as on the low microwave losses of high-temperature superconductors relative to their conventional conductor counterparts. For example, the surface resistance for a YBa(sub 2)Cu(sub 3)O(sub 7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper or gold at the same temperature and frequency. SrTiO3 and Ba(sub x)Sr(sub 1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa(sub 2)Cu(sub 3)O(sub 7-delta), thus enabling the growth of highly textured YBa(sub 2)Cu(sub 3)O(sub 7-delta) films with high critical current densities (i.e., greater than 1 MA/sq cm) on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa(sub 2)Cu(sub 3)O(sub 7-delta) film.

Miranda, Felix A.

Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

VanKeuls, Frederick W.

Inorganic photochromic and cathodochromic recording materials.

Discussion of studies at RCA Laboratories of the properties of rare-earth-doped CaF2, transition-metal-doped SrTiO3 and iron- or sulfur-doped sodalite as photochromic materials which change color during light or electron beam exposures. Particular attention is given to their photochromic characteristics in single-crystal and powder forms and to their cathodochromic properties in powder form. Details are given on the photochromic mechanisms, spectra, optical density, thermal decay rates, and coloring and bleaching efficiency of their single crystals and on the diffuse reflectance spectra, saturated photochromic contrast ratio, switching and erase sensitivities, and cathodochromic excitation of their photochromic powders. The many attractive characteristics of these materials when used in display storage systems are indicated.

Duncan, R. C., Jr.

Photoelectrochemical cells - Conversion of intense optical energy

Conversion of optical energy to chemical energy and/or electrical energy using wet photoelectrochemical cells is described. Emphasis is on (1) the photoelectrolysis of H2O to H2 and O2 using cells having n-type semiconductor photoelectrodes fabricated from TiO2, SnO2, SrTiO3, KTaO3, and KTa(0.77)Nb(0.23)O3, and (2) the conversion of light to electrical energy using CdSe- and CdS-based cells with polysulfide electrolytes.

Wrighton, M. S.

Superconductivity of polar many-valley semiconductors and semimetals

A polar, degenerate semiconductor with two equivalent isotropic valleys, and a semimetal with equal effective masses for the holes and electrons were studied within the framework of a modified Gurevich-Larkin-Firsov model by taking into account the intervalley pairing. Concentration dependencies are found for the critical temperature which agree qualitatively with experimental data for SrTiO3 and BaPb(1-x)Bi(x)O3.

Gabovich, A. M.