Stacking Faults Assist Lithium-Ion Conduction in a Halide-Based Superionic Conductor
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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
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The role of intrinsic stacking fault in facilitating the pressure-induced phase transition in CoCrFeMnNi high entropy alloys
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Lin, Chih-Ming (ORCID:0000000157344400)↗
Stacking Fault Energy Based Alloy Screening for Hydrogen Compatibility
The selection of austenitic stainless steels for hydrogen service is challenging since there are few intrinsic metrics that relate alloy composition to hydrogen degradation. One such metric, explored here, is intrinsic stacking fault energy. Stacking fault energy has an influence on the character and structure of dislocations and on the formation of secondary crystalline phases created during mechanical deformation in austenitic alloys. In this work, a data-driven model for the intrinsic stacking fault energy of common austenitic stainless steel alloys is applied to compare the relative degradation of tensile performance in the presence of hydrogen. A transition in the tensile reduction of area of both 300-series and manganese stabilized stainless steels is observed at a calculated stacking fault energy of approximately 43 mJ m -2 , below which pronounced hydrogen degradation on tensile ductility is observed. The model is also applied to suggest alloying strategies for low nickel austenitic stainless steels for hydrogen service. Lastly, through this investigation, we find that calculated intrinsic stacking fault energy is a high-throughput screening metric that enables the ranking of the performance of a diverse range of austenitic stainless steel compositions, as well as the identification of new alloys, with regard to hydrogen compatibility.
08 HYDROGEN↗
Linking electronic structure calculations to generalized stacking fault energies in multicomponent alloys
Abstract The generalized stacking fault energy is a key ingredient to mesoscale models of dislocations. Here we develop an approach to quantify the dependence of generalized stacking fault energies on the degree of chemical disorder in multicomponent alloys. We introduce the notion of a “configurationally-resolved planar fault” (CRPF) energy and extend the cluster expansion method from alloy theory to express the CRPF as a function of chemical occupation variables of sites surrounding the fault. We apply the approach to explore the composition and temperature dependence of the unstable stacking fault energy (USF) in binary Mo–Nb alloys. First-principles calculations are used to parameterize a formation energy and CRPF cluster expansion. Monte Carlo simulations show that the distribution of USF energies is significantly affected by chemical composition and temperature. The formalism is broadly applicable to arbitrary crystal structures and alloy chemistries and will enable the development of rigorous models for deformation mechanisms in high-entropy alloys.
Natarajan, Anirudh Raju (ORCID:0000000202529480)↗
On the distribution of stacking faults at dissociated medium-angle grain boundaries: Crystallographic geometry and metastability
Grain boundaries in FCC metals with low stacking-fault energy can form in dissociated configurations of stacking faults. Perhaps the most studied example is 9R stacking at boundaries near Σ3{112}, where the distribution of stacking faults is related to the emission of Shockley partial dislocations. Here, we combine atomic-resolution electron microscopy, atomistic simulations, and dislocation theory to demonstrate that boundaries vicinal to Σ33a support the stabilization of dissociated 9R stacking within a narrow range of inclinations. This boundary is interesting since its misorientation (20.05°) lies in the medium-angle regime, just past the upper misorientation limit for low-angle boundaries, motivating questions for how best to describe it in terms of dislocations. Our HAADF-STEM observations of thin film bicrystals, supported by atomistic modeling, reveal that this inclination dependence arises from specific geometric constraints on the arrangement of Shockley partial dislocations at the interface. Quantification of stacking-fault distributions across multiple boundaries indicates that the density and spacing of faults closely follow the ideal 9R motif, with subtle variations reflecting the complex energy landscape of these boundaries. Through energetic analysis, we establish the presence of competing metastable states enabled by variations in stacking sequences, emphasizing the significant role of crystallographic geometry. We generalize our analysis as a function of misorientation, showing how 9R at the Σ33a boundary is related to previous observations and calculations of HCP at a 29.7° boundary. This study provides a crystallographically grounded framework connecting dislocation structures, stacking-fault distributions, and metastability at grain boundaries in FCC metals.
Atomistic modeling↗
Microscopic model for the stacking-fault potential and the exciton wave function in GaAs
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging cou- pled with density functional and effective-mass theory to build a microscopic model of the stacking- fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Effect of stacking fault energy on damage microstructure in ion-irradiated CoCrFeNiMn concentrated solid solution alloys
In order to understand the effect of stacking fault energy on microstructural evolution in concentrated solid solution alloys, Kr 2+ ion irradiation was performed for FCC-type CoCrFeNiMnx alloys. During Kr 2+ ion irradiation at 500 degrees C the formation of black dots, self-interstitial atom faulted loops and perfect loops were observed, but no observable voids were found in all the alloys. The comparison of microstructural evolution among CoCrFeNiMn x (x = 0.7, 1, 1.3) alloys revealed less faulted loop number density and size in CoCrFeNiMn 1.3 . The stacking fault energy of each alloy was investigated using the deformed CoCrFeNiMn x alloys, and it was revealed that CoCrFeNiMn 1.3 had the highest stacking fault energy, which is higher value than that of 316SS. From these results, it is suggested that FeCrNiMn-based concentrated solid solution alloys could be well-designed by controlling the stacking fault energy with optimized Mn concentration as one of high radiation resistance structure materials. (C) 2020 Elsevier B.V. All rights reserved.
36 MATERIALS SCIENCE↗
Stacking fault analysis for the early-stages of PVT growth of 4H-SiC crystals
Here, four types of stacking fault formation mechanisms are identified and discussed for early stage PVT growth of 4H-SiC crystals: Type 1: Shockley / double Shockley stacking fault formation inside the facet; Type 2: Stacking fault formation via 2D nucleation; Type 3: Frank + Shockley (S) stacking fault formation due to deflection of threading mixed dislocation (TMD) by macrosteps; Type 4: “Carrot” defect formation related to overgrowth of the terrace formed by separation of 3c/4 and c/4 step risers after deflection of a TMD by vicinal steps. The results help further reduction of defect generation in 4H-SiC substrates.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
The influence of stacking faults on mechanical behavior of advanced materials
We report there are abundant studies on deformation mechanisms in metallic materials dominated by grain boundaries and twin boundaries. In comparison, the influence of stacking faults on deformation mechanisms of materials remains less well understood. Recent studies have shown that when the density of stacking faults increases sharply, their influence on mechanical behavior of metallic or ceramic materials becomes prominent, and in fact, dominates in some cases. This article reviews recent research progress on how nanoscale stacking faults impact the mechanical behavior of metallic and ceramic materials. We primarily focus on studies that reveal the formation of pre-existing stacking faults, their interactions with dislocations, and phase transformations during plastic deformation as evidenced by experiments and simulations. The aim of this review is to highlight the potential opportunities in using stacking faults to tailor the deformation mechanisms of advanced materials.
36 MATERIALS SCIENCE↗
Influence of stacking fault energy and hydrogen on deformation mechanisms in high Mn austenitic steels during in-situ tensile testing
High Mn austenitic steels are considered an economical alloy system for hydrogen storage and transport applications. This study used stacking fault energy (SFE) as a design parameter to achieve hydrogen embrittlement (HE)-resistant high Mn austenitic alloys. The role of hydrogen on the deformation mechanisms of low (29 mJ/m 2 ) and high SFE (49 mJ/m 2 ) alloys was evaluated through in-situ neutron diffraction during tensile loading. Hydrogen-precharging increased yield strength, partly due to hydrogen-induced lattice distortion (i.e., solute strengthening). Hydrogen accelerated the increase in defect density, including dislocations and stacking faults. The formation of planar deformation structures (twins and stacking faults), relative to dislocations, plays a critical role in promoting hydrogen-assisted fracture. The stacking fault frequency parameter obtained from neutron diffraction quantifies planar deformation tendencies, correlated with HE sensitivity. The higher SFE alloy exhibited greater resistance to HE, associated with the reduced propensity to form stacking faults and twins upon deformation in the hydrogen-precharged condition.
High Mn austenitic steel↗
An in situ ambient and cryogenic transmission electron microscopy study of the effects of temperature on dislocation behavior in CrCoNi-based high-entropy alloys with low stacking-fault energy
Temperature is known to affect deformation mechanisms in metallic alloys. As temperature decreases, the stacking-fault energy in many face-centered cubic (fcc) alloys decreases, resulting in a change of deformation mode from dislocation slip to deformation twinning. Such an impact of temperature can be more complex in compositionally heterogeneous microstructures that exhibit, for example, local concentration fluctuation such as that in multi-principal element alloys. In this work, we compare the dislocation behavior and mechanical properties of a fcc Cr 20 Mn 10 Fe 30 Co 30 Ni 10 high-entropy alloy at ambient and liquid-nitrogen temperatures. We find that a network of stacking faults is formed by uniformly extended dislocations at ambient temperatures with low stacking-fault energy, whereas at lower temperatures, uneven dissociation of dislocations becomes significant, which results in severe dislocation pile-ups together with their pronounced entanglement. Our findings indicate that as the stacking-fault energy decreases with decreasing temperature, the heterogeneity of the distribution of elements becomes more dominant in tuning the local variation of lattice resistance. As a result, the change in dislocation behavior at low temperatures strongly affects microstructural evolution and consequently leads to significantly more pronounced work hardening.
36 MATERIALS SCIENCE↗
PyFaults: A Python Toolkit for Stacking Fault Screening
PyFaults is an open-source Python library designed to model stacking fault disorder in crystalline materials and qualitatively assess the characteristic selective broadening effects in powder X-ray diffraction (PXRD). Here, the main capabilities of PyFaults are presented, including unit cell and supercell model construction, PXRD pattern calculation, assessment against experimental PXRD, and methods for rapid screening of candidate models within a set of possible stacking vectors and fault occurrence probabilities. This program aims to serve as a computationally inexpensive tool for identifying and screening potential stacking fault models in materials with planar disorder. Three diverse case studies, involving GaN, Li2MnO3 and Li3YCl6, are presented to illustrate the program functionality across a range of structure types and stacking fault modalities.
MATHEMATICS AND COMPUTING↗
Atomic Structural Features of Stacking Faults and Domain Connections in the Li- and Mn-Rich Cathode
Li- and Mn-rich layered oxides (LMRs), a class of earth-abundant materials for rechargeable Li-ion battery cathodes, crystallize into layered structures of two different symmetries: C2/m represented by Li 2 MnO 3 and R$\overline{3}$m represented by LiMn 0.5 Ni 0.5 O 2 . Fundamental questions about how the C2/m and R$\overline{3}$m domains spatially correlate within the same oxide grain and how the C2/m stacking faults arrange themselves when this happens still remain. Here, by using integrated differential phase contrast imaging in scanning transmission electron microscopy (STEM-iDPC), we probe the structural and compositional details of a prototypical, cobalt-free LMR material, 0.3Li 2 MnO 3 •0.7LiMn 0.5 Ni 0.5 O 2 (Li 1.13 Mn 0.57 Ni 0.3 O 2 ). The connection between the C2/m and R$\overline{3}$m domains is found to be abrupt, facilitated by the small lattice mismatch between the two structures. Stacking faults in the C2/m domains feature atomic plane shifting that accommodates stacking sequence changes, which explains why the stacking faults form in a random manner. Furthermore, a local disordering mechanism was identified to correlate with the C2/m stacking faults. Chemically, it is found that Ni coexists with Mn at the transition metal sites within the nominal Li 2 MnO 3 domain. As a result, this study demonstrates that STEM-iDPC is a very useful tool for capturing all the elements in a single image, revealing atomic details on domain connections and stacking faults in the LMRs.
Li-rich and Mn-rich oxides↗
Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires
While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe 1–x S x ) alloys, obtained by vapor–liquid–solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe 1–x S x alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Here, our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Stacking Faults and Topological Properties in MnBi 2 Te 4 : Reconciling Gapped and Gapless States
Despite theoretical predictions of a gapped surface state for the magnetic topological insulator MnBi 2 Te 4 (MBT), there has been a series of experimental evidence pointing toward gapless states. Here, we theoretically explore how stacking faults could influence the topological characteristics of MBT. We envisage a scenario that a stacking fault exists at the surface of MBT, causing the uppermost layer to deviate from the ground state and its interlayer separation to be expanded. This stacking fault with modulated interlayer couplings hosts a nearly gapless state within the topmost layer due to charge redistribution as the outermost layer recedes. Furthermore, we find evidence of spin-momentum locking and preservation of weak band inversion in the gapless surface state, suggesting the nontrivial topological surface states in the presence of the stacking fault. In conclusion, our findings provide a plausible elucidation to the long-standing conundrum of reconciling the observation of gapped and gapless states on MBT surfaces.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Machine-learning-aided density functional theory calculations of stacking fault energies in steel
A combined large-scale first principles approach with machine learning and materials informatics is proposed to quickly sweep the chemistry-composition space of advanced high strength steels (AHSS). AHSS are composed of iron and key alloying elements such as aluminum and manganese. A systematic exploration of the distribution of aluminum and manganese atoms in iron is used to investigate low stacking fault energies configurations using first principles calculations. To overcome the computational cost of exploring the composition space, this process is sped up using an automated machine learning tool: DeepHyper. Here our results predict that it is energetically favorable for Al to stay away from a stacking fault, but Mn atoms do not affect the stacking fault energy and can stay in the vicinity of the fault. The distribution of Al and Mn atoms in systems containing stacking faults and the effects of their interactions on the equilibrium distribution are systematically analyzed.
36 MATERIALS SCIENCE↗
Towards stacking fault energy engineering in FCC high entropy alloys
Stacking Fault Energy (SFE) is an intrinsic alloy property that governs much of the plastic deformation mechanisms observed in fcc alloys. While SFE has been recognized for many years as a key intrinsic mechanical property, its inference via experimental observations or prediction using, for example, computationally intensive first-principles methods is challenging. This difficulty precludes the explicit use of SFE as an alloy design parameter. In this work, we combine DFT calculations (with necessary configurational averaging), machine-learning (ML) and physics-based models to predict the SFE in the fcc CoCrFeMnNiV-Al high-entropy alloy space. The best-performing ML model is capable of accurately predicting the SFE of arbitrary compositions within this 7-element system. Finally, this efficient model along with a recently developed model to estimate intrinsic strength of fcc HEAs is used to explore the strength–SFE Pareto front, predicting new-candidate alloys with particularly interesting mechanical behavior.
36 MATERIALS SCIENCE↗
Stacking Faults Originating from Star-Defects in 4H-SiC
Intense efforts are currently in progress to study various sources of basal plane dislocations (BPDs) in SiC epitaxial layers. BPDs can generate Shockley-type stacking faults (SSFs) in SiC epitaxial layers, which have been shown to be associated with the degradation of power devices. This study shows that the star-shaped defect can be a source of several BPDs in the epitaxial layer. We investigate the complex microstructure of the star defect, the generation of BPDs, and expansion of SSFs using various complementary microscopy and optical techniques. We show direct evidence that star-defects can be a nucleation point of single-SSFs that can expand at the core of the defect. Newly found secondary dislocation arrays extending over a few centimeters away are found to be emanating from the primary arms of the star defect. The presence of such dislocation walls and the expansion of single-SSFs will affect the yield of numerous die on a wafer. Further understanding of the formation mechanism of stacking faults generated from star-defects as provided in this study helps understand their effect on SiC-based devices, which is crucial to assess device reliability.
36 MATERIALS SCIENCE↗