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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Sub-THz passive detector performance evaluation with RadiaBeam photoinjector

Wakefield accelerators, based on THz and mm-wave structures, promise to reach the highest energies in record small footprints. However, operation at such frequencies is associated with strong generation of dipole modes that can destroy the beams, which requires controlling the electron beam position at the micron scale. The existing conventional techniques for electron beam position monitoring are not applicable for sub-THz structures due to the space constraints. Here, on the other hand, if dipole modes amplitudes can be measured precisely at different planes, one can derive beam position relative to the central axis. For such a technique a reliable and cost-effective sensor capable of operating in high repletion rate regime is required. In this paper we review the experimental evaluation of a passive sensor candidate for such applications using RadiaBeam 4.5 MeV photoinjector.

Accelerator↗

Control of wakefield in sub-THz dielectric-lined waveguides using multiple-bunch excitation

Beam-driven wakefield accelerators offer the potential to achieve accelerating fields approaching the sub-GV/m range, paving the way for compact and cost-effective next-generation high-energy colliders. This method typically employs a two-bunch system: a drive bunch that excites an electromagnetic wakefield in a solid-state or plasma medium, and a witness bunch that extracts energy from the wake for acceleration. Our research focuses on two key challenges in wakefield acceleration using structures. First, we investigate strategies to suppress transverse instabilities by employing non-cylindrical geometries that damp dipole modes. Second, we explore methods to precisely terminate the wakefield after the interaction region, thereby improving the efficiency of energy transfer. This paper presents detailed simulation results and the corresponding experimental design developed to validate these concepts. Furthermore, the proposed experiment will be carried out at the Argonne Wakefield Accelerator (AWA) facility, focusing on controlling wakefield duration through tailored drive and witness bunch configurations and evaluating dielectric-lined structures with non-cylindrical cross sections.

43 PARTICLE ACCELERATORS↗

A Sub-THz CMOS Molecular Clock with 20 ppt Stability at 10,000 s Based on A Dual-Loop Spectroscopic Detection and Digital Frequency Error Integration

This paper presents a dual-loop chip-scale molecular clock (CSMC), which enhances the Allan Deviation performance by combining high signal-to-noise ratio of using fundamental mode and long-term stability of using higher order modes in derivative molecular absorption spectroscopy. In addition, digital frequency-error integration is adopted in the frequency-locked loop to provide an infinite open-loop DC gain, which fully suppresses any frequency drift caused by the temperature-sensitive crystal oscillator. This new generation CSMC is implemented in 65-nm CMOS, and achieves 20 ppt (part-per-trillion) Allan Deviation at 10,000 s averaging time with 71-mW power consumption.

Han, Ruonan↗

Interferometric bunch length measurements of 3 MeV picocoulomb electron beams

We report picosecond bunch length measurements using an interferometric method for a 3 MeV electron beam having bunch charge ranging from 1 to 14 pC. The method senses the single-cycle sub-terahertz (THz) pulse emitted by each electron bunch as coherent transition radiation which, in turn, is analyzed using a Michelson-type interferometer, forming an interferogram that is then processed to yield the nominal electron bunch length. This sub-THz coherent radiation intensity was measured using a quasi-optical detector (QOD) operated at room temperature. This experiment was quite challenging since the divergence angle of the sub-THz pulse emitted by the low-energy electron bunch exceeds ±10°, and its pulse energy at the entrance to the detector was as low as 100 pJ. When compared to a conventional helium-cooled silicon composite bolometer designed for frequencies above 0.5 THz, the QOD provided much better signal-to-noise ratio in the ~80 GHz frequency range, which was critical for the successful measurement of the bunch length.

36 MATERIALS SCIENCE↗

Experimental design of a W-band corrugated waveguide for wakefield acceleration studies

Radiofrequency (RF) structures in the sub-terahertz (sub-THz) regime are of interest for applications in structure wakefield acceleration due to their compact size and potential for high gradients. Here, we present the design, fabrication, and experimental setup of a metallic corrugated waveguide at 110 GHz, optimized for the 42 MeV electron beam parameters at the Argonne Wakefield Accelerator (AWA). The emittance exchange (EEX) beamline at AWA was used to perform longitudinal bunch shaping for two cases: (1) a high decelerating gradient experienced by a single drive electron bunch about 250 μm long; (2) a high transformer ratio using a two-bunch train consisting of a triangularly shaped drive bunch followed by a long witness bunch to probe the wakefield. Preliminary experimental results are presented, and data analysis is ongoing.

43 PARTICLE ACCELERATORS↗

Broadband THz Modulation via Solid–State Organic Electrochemical Devices

The sub-Terahertz and Terahertz bands play a critical role in next-generation wireless communication and sensing technologies, thanks to the large amount of available bandwidth in this spectral regime. While long-wavelength (microwave to mm-Wave) and short-wavelength (near-infrared to ultraviolet) devices are well-established and studied, the sub-THz to THz regime remains relatively underexplored and underutilized. Traditional approaches used in the aforementioned spectral regions are more difficult to replicate in the THz band, leading to the need for the development of novel devices and structures that can manipulate THz radiation effectively. Herein a novel organic, solid-state electrochemical device is presented, capable of achieving modulation depths of over 90% from ≈500 nm of a conducting polymer that switches conductivity over a large dynamic range upon application of an electronically controllable external bias. The stability of such devices under long-term, repeated voltage switching, as well as continuous biasing at a single voltage, is also explored. Switching stabilities and long-term bias stabilities are achieved over two days for both use cases. Additionally, both depletion mode (always “ON”) and accumulation mode (always “OFF”) operation are demonstrated. These results suggest applications of organic electrochemical THz modulators in large area and flexible implementations.

36 MATERIALS SCIENCE↗

MetaHeart: Metasurface enabled biometrics camouflage

Privacy-invading biometrics monitoring is becoming a prominent security threat as modern sensing systems move to higher operating frequencies (mmWave, sub-THz), increasing sensing resolution and accuracy. As such, developing systems that can protect or obfuscate biometrics from adversarial intrusion becomes pivotal to preserving user privacy. In this work, we develop and implement MetaHeart, a real-time biometrics misinformation system based on reflective, programmable metasurfaces and dynamic phase-front manipulation of radar inferences. MetaHeart’s key goal is to prevent the leakage of a legitimate user’s heartbeat biometrics by spoofing fake heartbeat signals at a malicious, radar-equipped, heart rate sensing intruder. Furthermore, we experimentally demonstrate MetaHeart’s ability to fake Alice’s presence when she is not there and to fool Trudy’s inferences even when Alice is present, achieving an overall accuracy above 98%. Finally, we conduct a robustness analysis to determine MetaHeart’s required spatial placement within the intruder’s monitoring area that would allow for effective spoofing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Observation of a THz-sub-THz spontaneous coherent undulator radiation driven by a low energy electron beam from a thermionic RF electron gun

In this work, we report observations of an intense, multi-band, sub-THz and THz radiation extracted from a similar to 2-3 MeV electron beam with a flat transverse profile propagating in an oversized rectangular waveguide placed into a 3.25 mm gap of a planar undulator having 1.3 cm period and similar to 20 cm length. Radiation outcoupling is accomplished using a horn antenna and a miniature permanent in-vacuum magnet separating the mm-sub-mm-waves and electron beam. A table-top experiment utilizes a radio frequency thermionic electron gun delivering a thousand momentum-chirped microbunches per macropulse and an alpha-magnet producing microbunches of a sub-mm length. Total radiated energy of a sub-millijoule per a microsecond radio frequency macropulse is demonstrated with flux more than ten micro-Joules per centimeter squared. With 1 THz filter the energy measured is about 1 microjoule and flux of a few micro-Joules per centimeter squared.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

High frequency atomic tunneling yields ultralow and glass-like thermal conductivity in chalcogenide single crystals

Crystalline solids exhibiting glass-like thermal conductivity have attracted substantial attention both for fundamental interest and applications such as thermoelectrics. In most crystals, the competition of phonon scattering by anharmonic interactions and crystalline imperfections leads to a non-monotonic trend of thermal conductivity with temperature. Defect-free crystals that exhibit the glassy trend of low thermal conductivity with a monotonic increase with temperature are desirable because they are intrinsically thermally insulating while retaining useful properties of perfect crystals. However, this behavior is rare, and its microscopic origin remains unclear. Here, we report the observation of ultralow and glass-like thermal conductivity in a hexagonal perovskite chalcogenide single crystal, BaTiS 3 , despite its highly symmetric and simple primitive cell. Elastic and inelastic scattering measurements reveal the quantum mechanical origin of this unusual trend. A two-level atomic tunneling system exists in a shallow double-well potential of the Ti atom and is of sufficiently high frequency to scatter heat-carrying phonons up to room temperature. While atomic tunneling has been invoked to explain the low-temperature thermal conductivity of solids for decades, our study establishes the presence of sub-THz frequency tunneling systems even in high-quality, electrically insulating single crystals, leading to anomalous transport properties well above cryogenic temperatures.

36 MATERIALS SCIENCE↗

Spin pumping from antiferromagnetic insulator spin-orbit-proximitized by adjacent heavy metal: a first-principles Floquet-nonequilibrium Green function study

Motivated by the recent experiment on spin pumping from sub-THz radiation-driven uniaxial antiferromagnetic insulator (AFI) MnF 2 into heavy metal (HM) Pt hosting strong spin-orbit (SO) coupling, we compute and compare pumped spin currents in Cu/MnF 2 /Cu and Pt/MnF 2 /Cu heterostructures. Recent theories of spin pumping by AFI have relied on simplistic Hamiltonians (such as tight-binding) and the scattering approach to quantum transport yielding the so-called interfacial spin mixing conductance (SMC), but the concept of SMC ceases to be applicable when SO coupling is present directly at the interface. In contrast, we use a more general first-principles quantum transport approach which combines noncollinear density functional theory with Floquet-nonequilibrium Green's functions in order to take into account: SO-proximitized AFI as a new type of quantum material, different from isolated AFI and brought about by AFI hybridization with adjacent HM layer; strong SO coupling at the interface; and evanescent wavefunctions penetrating from Pt or Cu into AFI layer to make its interfacial region conducting rather than insulating as in the isolated AFI. The DC component of pumped spin current $I_\mathrm{DC}^{S_z}$ vs. precession cone angle $\theta_{\boldsymbol{l}}$ of the Néel vector l of AFI does not follow putative $I^{S_z}_\mathrm{DC} \propto \sin^2 \theta_{\boldsymbol{l}}$, except for very small angles $\theta_{\boldsymbol{l}} \lesssim 10^\circ$ for which we define an effective SMC from the prefactor and find that it doubles from MnF2/Cu to MnF2/Pt interface. In addition, the angular dependence $I^{S_z}_\mathrm{DC}(\theta_{\boldsymbol{l}})$ differs for opposite directions of precession of the Néel vector, leading to twice as large SMC for the right-handed than for the left-handed chirality of the precession mode.

36 MATERIALS SCIENCE↗

6G Sparse Transmitarray

This powerpoint presents a sparse transmitarray design for 6G technology. The proposed approach leverages aperiodic arrays with large inter-element spacings, offering grating lobe-free operation, enhanced gain, and narrow beamwidths. The transmitarray topology, designed for sub-THz and THz frequencies, simplifies feed-network complexity, and minimizes losses. Numerical analysis and full wave simulation results show this approach is feasible.

Christian, Thomas Edward↗

Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy

The increase of device lifetime and reliability of THz photomixers will play an essential role in their possible future application. Therefore, their optimal work conditions/operation range, i.e., the maximal incident optical power should be experimentally estimated. We fabricated and tested THz photomixer devices based on nitrogen-implanted GaAs integrated with a Bragg reflector. Raman spectroscopy was applied to investigate the material properties and to disclose any reversible or irreversible material changes. The results indicate that degradation effects in the photomixer structures/material could be avoided if the total optical power density does not exceed levels of about 0.7 mW/µm 2 for 100 min of operation. Furthermore, the investigations performed during 1000 min of optical exposure on the photomixer devices’ central region comprising interdigitated metal-semiconductor-metal (MSM) structures suggest a reversible “curing” mechanism if the power density level of ~0.58 mW/µm 2 is not exceeded. Long-term operation (up to 1000 h) reveals that the photomixer structures can withstand an average optical power density of up to ~0.4 mW/µm 2 without degradation when biased at 10 V. Besides the decrease of the position of the A1g (LO) Raman mode from ~291 cm -1 down to ~288 cm -1 with increasing optical power density and operation time, broad Raman modes evolve at about 210 cm -1 , which can be attributed to degradation effects in the active photomixer/MSM area. In addition, the performed carrier lifetime and photomixer experiments demonstrated that these structures generated continuous wave sub-THz radiation efficiently as long as their optimal work conditions/operation range were within the limits established by our Raman studies.

36 MATERIALS SCIENCE↗

Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

Ning, Cun-Zheng↗

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Ning, Cun-Zheng↗

Unusual Emissions at Various Energies Prior to the Impulsive Phase of the Large Solar Flare and Coronal Mass Ejection of 4 November 2003

The GOES X28 flare of 4 November 2003 was the largest ever recorded in its class. It produced the first evidence for two spectrally separated emission components, one at microwaves and the other in the THz range of frequencies.We analyzed the pre-flare phase of this large flare, twenty minutes before the onset of the major impulsive burst. This periodis characterized by unusual activity in X-rays, sub-THz frequencies, H, and microwaves.The CME onset occurred before the onset of the large burst by about 6 min.

Solar X-rays↗