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Micromachined Millimeter- and Submillimeter-wave SIS Heterodyne Receivers for Remote Sensing
This is a progress report for the second year of a NASA-sponsored project. The report discusses the design and fabrication of micromachined Superconductor Insulator Superconductor (SIS) heterodyne receivers with integrated tuning elements. These receivers tune out the functional capacitance at desired frequencies, resulting in less noise, lower temperatures and broader bandwidths. The report also discusses the design and fabrication of the first monolithic 3x3 focal-plane arrays for a frequency range of 170-210 GHz. Also addressed is the construction of a 9-channel bias and read-out system, as well as the redesign of the IF connections to reduce cross talk between SIS junctions, which become significant a frequency of 1.5 GHz IF. Uniformity of the junction arrays were measured and antenna beam patterns of several array elements under operating conditions also were measured. Finally, video and heterodyne responses of our focal-plane arrays were measured as well. Attached is a paper on: 'Development of a 170-210 GHz 3x3 micromachined SIS imaging array'.
Micromachined Millimeter- and Submillimeter-Wave SIS Heterodyne Receivers for Remote Sensing
A heterodyne mixer with a micromachined horn antenna and a superconductor -insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30+/-3 K without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.
Submillimeter-Wave Receiver Containing An SIS Mixer
Submillimeter-wave heterodyne receiver designed to operate at input frequencies in range of 480 to 650 GHz. Intended for use in radio astronomy at frequency of 547 or 626 GHz. Heart of receiver is waveguide mixer that includes adjustable backshort and electric-field-plane tuner. Mixing element high-current-density superconductor/insulator/superconductor (SIS) tunnel junction integrated with superconductive microstrip radio-frequency circuit that tunes out capacitance of junction; matching complex impedance of junction to available tuning range of waveguide mount.
Generating Submillimeter-Wave Frequencies From Laser Pulses
Semiconductor photoconductive switches generate electrical pulses containing submillimeter-wavelength carrier signals (frequency between 300 and 3,000 GHz) and harmonics thereof when illuminated with short-rise-time pulses from lasers. Device of this type used as local oscilator in heterodyne submillimeter-wave receiver. Electrical output of device coupled via transmission line, waveguide, or antenna to mixer circuitry of receiver. Phase delays between optically activated semiconductor switches determine output carrier frequencies. N electrical pulses generated by each laser pulse. Thus, fundamental output frequency is N times laser-pulse-repetition rate.
Sideband-Separating, Millimeter-Wave Heterodyne Receiver
Researchers have demonstrated a submillimeter-wave spectrometer that combines extremely broad bandwidth with extremely high sensitivity and spectral resolution to enable future spacecraft to measure the composition of the Earth s troposphere in three dimensions many times per day at spatial resolutions as high as a few kilometers. Microwave limb sounding is a proven remote-sensing technique that measures thermal emission spectra from molecular gases along limb views of the Earth s atmosphere against a cold space background.
A wide-band 760-GHz planar integrated Schottky receiver
A wideband planar integrated heterodyne receiver has been developed for use at submillimeter-wave to FIR frequencies. The receiver consists of a log-periodic antenna integrated with a planar 0.8-micron GaAs Schottky diode. The monolithic receiver is placed on a silicon lens and has a measured room temperature double side-band conversion loss and noise temperature of 14.9 +/- 1.0 dB and 8900 +/- 500 K, respectively, at 761 GHz. These results represent the best performance to date for room temperature integrated receivers at this frequency.
Report of the heterodyne submillimeter-wave sensors panel
After reviewing the science goals of the Astrotech 21 mission set, and comparing the resulting receiver performance requirements with existing technology, the panel determined that there were significant unmet requirements in four areas: local oscillator power and mixer sensitivity in the Tera-Hz regime, infrared spectrometer channel count, and array technology in any form. A comprehensive development plan has been prepared to provide these capabilities in the time frame needed before technology freeze dates of the respective missions. It was also noted that development of these capabilities has immense payoff for future astrophysics missions, as it opens entire new areas of spectroscopy and imaging in the critical submillimeter wave regime rich in molecular transitions.
Performance Limitations of Niobium-based Submillimeter-Wave Quasiparticle Mixers Operating Near the Gap Frequency
We have measured the noise temperature of heterodyne receivers employing.
Submillimeter-wave receivers - A status report
A development status assessment is presented for the work of U.S. and Western European research groups on heterodyne sub-mm receivers in the 300-1000 GHz frequency range. The applications driving sub-mm receiver and local oscillator source technologies are radio astronomy, atmospheric measurements, plasma diagnostics, and laboratory spectroscopy. Progress is concentrated in two areas, cooled Schottky diode mixers and solid state local oscillators employing frequency multipliers.
Integrated Arrays on Silicon at Terahertz Frequencies
In this paper we explore various receiver font-end and antenna architecture for use in integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies and use of novel integrated antennas with silicon micromachining are reported. We report novel stacking of micromachined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages which easily leads to the development of 2- dimensioanl multi-pixel receiver front-ends in the terahertz frequency range. We also report an integrated micro-lens antenna that goes with the silicon micro-machined front-end. The micro-lens antenna is fed by a waveguide that excites a silicon lens antenna through a leaky-wave or electromagnetic band gap (EBG) resonant cavity. We utilized advanced semiconductor nanofabrication techniques to design, fabricate, and demonstrate a super-compact, low-mass submillimeter-wave heterodyne frontend. When the micro-lens antenna is integrated with the receiver front-end we will be able to assemble integrated heterodyne array receivers for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.
Miniature Low Power Submillimeter-Wave Spectrometer for Detection of Water in the Solar System
The mass and power of a heterodyne spectrometer must be greatly reduced to satisfy small space mission constraints. We report on a 220 GHz receiver, requiring less than 4.8 W, with a mass of 1.25 kg. The mass and power savings are achieved through reducing components to a minimum, while providing performance for a Martian atmospheric sounder.
Miniature Low Power Submillimeter-Wave Spectrometer For Detection of Water in The Solar System
Mass and power for the next generation of NASA's heterodyne spectrometers must be greatly reduced to satisfy the constraints of future small-spacecraft missions. Here we present a new receiver concept for remote sensing in the Solar System, with greatly reduced mass, power, and size compared to instruments implemented in current missions.
Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies
Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.
Three-Stage InP Submillimeter-Wave MMIC Amplifier
A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.
Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers
The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work for this design is to apply the high output power from both the 250 and 300 GHz to multiple chains in order to generate milliwatts at 2.3 THz. Using the first generation of results for this innovation, 40 mW of output power were produced from a 240-GHz tripler at 350-mW input power, and 27- mW output power was produced from a 300-GHz tripler at 408-mW input power. This is two times higher than the current state-of-the-art output power capability. A finite-element thermal simulation also shows that 30-microns thick diamond dropped the temperature of the anodes by at least 200 C.
A Submillimeter Wave SIS Heterodyne Receiver Using Nb Tunnel Junctions with Integrated Tuning Circuits for 626 GHz
So far, the most sensitive heterodyne receivers in the millimeter-wave and submillimeter-wave frequency ranges have used the mixing response of the quasiparticle currents in SIS tunnel junctions.
Power Amplifier Module with 734-mW Continuous Wave Output Power
Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers-to generate higher frequency signals in nonlinear Schottky diode-based LO sources. By advancing PA technology, the LO system performance can be increased with possible cost reductions compared to current GaAs PAs. High-power, high-efficiency GaN PAs are cross-cutting and can enable more efficient local oscillator distribution systems for new astrophysics and planetary receivers and heterodyne array instruments. It can also allow for a new, electronically scannable solid-state array technology for future Earth science radar instruments and communications platforms.