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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
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NASA NTRS2006

The Development Of Enabling Technologies For Submillimeter-Wave Remote Sensing of Ice Clouds From Space

This paper presents the chronological development of technologies and techniques that have led to a satellite mission concept aimed at quantifying the temporal and spatial distributions of upper tropospheric ice clouds. The Submillimeter-wave and Infrared Ice Cloud Experiment (SIRICE) is an Earth System Science Pathfinder mission concept designed to improve our understanding of the upper tropospheric water cycle and its coupling to the Earth s radiation budget. Ice outflow from convective storm systems is known to play an important role in regional energy budgets; however, ice generation and subsequent precipitation and sublimation are poorly quantified. SIRICE will provide measurements of ice cloud distributions and microphysical properties which are needed for understanding the crucial link between the hydrologic and energy cycles. The SIRICE measurement platform is comprised of two integrated instruments, the Submillimeter/millimeter-wave radiometer (SM4) and the Infrared Cloud Ice Radiometer (IRCIR). The primary instrument is the SM4, a conical scanner that provides a 1600 km swath of the Earth's surface at 53 degree incidence. The SM4 has 6 linearly polarized receivers measuring 12 spectral bands centered at 183 GHz, 325 GHz, 448 GHz, 643 GHz and 874 GHz; two receivers at 643 GHz measure horizontal and vertical polarizations. Submillimeter-wavelengths are well suited to the remote sensing of ice clouds due to the relative size of the wavelengths to particle sizes. Upwelling emission from lower tropospheric water vapor is scattered by the ice clouds thus causing a brightness temperature depression at submillimeter wavelengths. The IRCIR is a push broom imager with approximately 1500 km swath and spectral channels at 11 and 12 micrometers. This combination of coincident infrared and submillimeter-wavelength measurements were chosen because of its ability to provide retrieval of ice water path and median particle size for a wide range of ice clouds from thin cirrus to thick anvil structures. Over the past decade there has been a parallel development of submillimeter-wave technologies, demonstration instruments, and remote sensing techniques that have led to the present SIRICE mission concept. Mapping of these developmental paths reveals the origins, rational and maturity of features of the SIRICE payload such as its channel selection, compact design, and multipoint calibration. This presentation traces the evolution of the SIRICE mission concept from the early 1990's to its present status.

Racette, Paul↗
NASA NTRS2010

Planar Submillimeter-Wave Mixer Technology with Integrated Antenna

High-performance mixers at terahertz frequencies require good matching between the coupling circuits such as antennas and local oscillators and the diode embedding impedance. With the availability of amplifiers at submillimeter wavelengths and the need to have multi-pixel imagers and cameras, planar mixer architecture is required to have an integrated system. An integrated mixer with planar antenna provides a compact and optimized design at terahertz frequencies. Moreover, it leads to a planar architecture that enables efficient interconnect with submillimeter-wave amplifiers. In this architecture, a planar slot antenna is designed on a thin gallium arsenide (GaAs) membrane in such a way that the beam on either side of the membrane is symmetric and has good beam profile with high coupling efficiency. A coplanar waveguide (CPW) coupled Schottky diode mixer is designed and integrated with the antenna. In this architecture, the local oscillator (LO) is coupled through one side of the antenna and the RF from the other side, without requiring any beam sp litters or diplexers. The intermediate frequency (IF) comes out on a 50-ohm CPW line at the edge of the mixer chip, which can be wire-bonded to external circuits. This unique terahertz mixer has an integrated single planar antenna for coupling both the radio frequency (RF) input and LO injection without any diplexer or beamsplitters. The design utilizes novel planar slot antenna architecture on a 3- mthick GaAs membrane. This work is required to enable future multi-pixel terahertz receivers for astrophysics missions, and lightweight and compact receivers for planetary missions to the outer planets in our solar system. Also, this technology can be used in tera hertz radar imaging applications as well as for testing of quantum cascade lasers (QCLs).

Chattopadhyay, Gautam↗
NASA NTRS2001

A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips

Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.

Bruston, J.↗
NASA NTRS2010

NASA Tech Briefs, May 2010

Topics covered include: Instrument for Analysis of Greenland's Glacier Mills Cryogenic Moisture Apparatus; A Transportable Gravity Gradiometer Based on Atom Interferometry; Three Methods of Detection of Hydrazines; Crossed, Small-Deflection Energy Analyzer for Wind/Temperature Spectrometer; Wavefront Correction for Large, Flexible Antenna Reflector; Novel Micro Strip-to-Waveguide Feed Employing a Double-Y Junction; Thin-Film Ferro Electric-Coupled Microstripline Phase Shifters With Reduced Device Hysteresis; Two-Stage, 90-GHz, Low-Noise Amplifier; A 311-GHz Fundamental Oscillator Using InP HBT Technology; FPGA Coprocessor Design for an Onboard Multi-Angle Spectro-Polarimetric Imager; Serrating Nozzle Surfaces for Complete Transfer of Droplets; Turbomolecular Pumps for Holding Gases in Open Containers; Triaxial Swirl Injector Element for Liquid-Fueled Engines; Integrated Budget Office Toolbox; PLOT3D Export Tool for Tecplot; Math Description Engine Software Development Kit; Astronaut Office Scheduling System Software; ISS Solar Array Management; Probabilistic Structural Analysis Program; SPOT Program; Integrated Hybrid System Architecture for Risk Analysis; System for Packaging Planetary Samples for Return to Earth; Offset Compound Gear Drive; Low-Dead-Volume Inlet for Vacuum Chamber; Simple Check Valves for Microfluidic Devices; A Capillary-Based Static Phase Separator for Highly Variable Wetting Conditions; Gimballing Spacecraft Thruster; Finned Carbon-Carbon Heat Pipe with Potassium Working Fluid; Lightweight Heat Pipes Made from Magnesium; Ceramic Rail-Race Ball Bearings; Improved OTEC System for a Submarine Robot; Reflector Surface Error Compensation in Dual-Reflector Antennas; Enriched Storable Oxidizers for Rocket Engines; Planar Submillimeter-Wave Mixer Technology with Integrated Antenna; Widely Tunable Mode-Hop-Free External-Cavity Quantum Cascade Laser; Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise; Using Whispering-Gallery-Mode Resonators for Refractometry; RF Device for Acquiring Images of the Human Body; Reactive Collision Avoidance Algorithm; Fast Solution in Sparse LDA for Binary Classification; Modeling Common-Sense Decisions in Artificial Intelligence; Graph-Based Path-Planning for Titan Balloons; Nanolaminate Membranes as Cylindrical Telescope Reflectors; Air-Sea Spray Airborne Radar Profiler Characterizes Energy Fluxes in Hurricanes; Large Telescope Segmented Primary Mirror Alignment; and Simplified Night Sky Display System.

Source record↗
NASA NTRS2008

Three-Stage InP Submillimeter-Wave MMIC Amplifier

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

Pukala, David↗
NASA NTRS2001

NASA Tech Briefs, January 2001

The topics include: 1) A "Model" of Interactive Engineering; 2) Feature Section: Communications Technology; 3) lnReview; 4) Application Briefs; 5) Submillimeter-Wave Image Sensor; 6) Ultrasonic/Sonic Drill/Corers With Integrated Sensors; 7) Normally Closed, Piezoelectrically Actuated Microvalve; 8) Magnetostrictively Actuated Valves for Cryosurgical Probes; 9) Remote Sensing of Electric Fields in Clouds; 10) Wireless-Communication Headset Subsystem To Enhance Signaling; 11) Power Amplifier With 9 to 13 dB of Gain From 65 to 146 GHz; 12) Humidity Interlock for Protecting a Cooled Laser Crystal; 13) A Lightweight Ambulatory Physiological Monitoring System; 14) Improvements in a Lightning-Measuring Instrument; 15) Broad-Band, Noninvasive Radio-Frequency Current Probe; 16) Web-Based Technology Distributes Lean Models; 17) Software Guides Aeroelastic-Systems Design; and 18) Postprocessing Software for Micromechanics Analysis Code. A Photonics West 2001 Preview Tech Brief supplement to this January 2001 issue is also included.

Source record↗
NASA NTRS1991

Report of the heterodyne submillimeter-wave sensors panel

After reviewing the science goals of the Astrotech 21 mission set, and comparing the resulting receiver performance requirements with existing technology, the panel determined that there were significant unmet requirements in four areas: local oscillator power and mixer sensitivity in the Tera-Hz regime, infrared spectrometer channel count, and array technology in any form. A comprehensive development plan has been prepared to provide these capabilities in the time frame needed before technology freeze dates of the respective missions. It was also noted that development of these capabilities has immense payoff for future astrophysics missions, as it opens entire new areas of spectroscopy and imaging in the critical submillimeter wave regime rich in molecular transitions.

Wilson, Robert↗
NASA NTRS2001

Micromachined TWTs for THz Radiation Sources

The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.

Booske, John H.↗
NASA NTRS2010

Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows rightward to the diodes. Because the RF is in a quasi- TEM (suspended, microstrip-like) mode, it impinges on the diodes in an anti-parallel mode that does not couple to the waveguide mode. This isolates the LO and RF signals. This operation is similar to a cross-bar mixer used at low frequencies, except the RF signal enters through the back-short end of the waveguide rather than through the side. The RF probe also conveys the down-converted intermediate frequency (IF) signal out to an off-chip circuit board through a simple LC low-pass filter to the left as indicated. The bias is brought to the diodes through a bypass capacitor at the top.

Siegel, Peter↗
NASA NTRS1983

Submillimeter-wave receivers - A status report

A development status assessment is presented for the work of U.S. and Western European research groups on heterodyne sub-mm receivers in the 300-1000 GHz frequency range. The applications driving sub-mm receiver and local oscillator source technologies are radio astronomy, atmospheric measurements, plasma diagnostics, and laboratory spectroscopy. Progress is concentrated in two areas, cooled Schottky diode mixers and solid state local oscillators employing frequency multipliers.

Wilson, W. J.↗
NASA NTRS2009

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).

Samoska, Lorene↗
NASA NTRS2010

Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems

Radisic, Vesna↗
NASA NTRS1992

Novel transmission lines for the submillimeter-wave region

Accounts are given of the two approaches to the design of low-loss sub-mm-wave transmission lines for intelligent computer control guidance, command systems for space applications, and sensors operating in an optically opaque environment. These are: (1) the extension of the mm-wave monolithic technology to higher frequencies, although this approach is restricted to the lower end of the sub-mm spectrum, up to 500 GHz, due to ohmic losses; and (2) the extension of optical techniques to lower frequencies. This second approach is also limited, to the higher end of the sub-mm spectrum. Available characterizations of these technologies' electrical properties are presented.

Katehi, Linda P. B.↗
NASA NTRS1994

Investigation of passive atmospheric sounding using millimeter and submillimeter wavelength channels

Progress by the Georgia Institute of Technology's Laboratory for Radio-science and Remote Sensing in developing techniques for passive microwave retrieval of water vapor profiles and cloud and precipitation parameters using millimeter and submillimeter wavelength channels is reviewed. Channels of particular interest are in the tropospheric transmission windows at 90, 166, 220, 340, and 410 GHz and centered around the water vapor lines at 183 and 325 GHz. Collectively, these channels have potential application in high-resolution precipitation mapping (e.g., from geosynchronous orbit), remote sensing of cloud and precipitation parameters, including cirrus ice mass, and improved retrieval of water vapor profiles. During the period from January 1, 1994 through June 30, 1994 research activities focussed on calibrating and interpreting data from the Millimeter-Wave Imaging Radiometer (MIR). The MIR was deployed on the NASA ER-2 during the Convective Atmospheric Moisture Experiment (CAMEX, September-October 1993) to obtain the first submillimeter-wave tropospheric imagery of convective precipitations. A 325-GHz radiometer consisted of a submillimeter-wave DSB receiver with three IF channels at +/- 1, 3, and 8.5 GHz, and approximately 14 dB DSB noise figure was successfully operated during these experiments. Activities supported under this grant include a study of the impact of local oscillator reflections from the MIR calibration loads, the development of optimal gain and offset filters for radiometric calibration, and the modeling and interpretation of the MIR 325-GHz data over both clear and cloudy atmospheres. In addition, polarimetric radiometer measurements and modeling for ocean surface and atmospheric cloud-ice studies_were supported.

Gasiewski, Albin J.↗