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At least 19 records

Substrate Effects on Electronic Properties of Atomic Chains

When the device size is reduced down to 0.07 micrometers, the number of dopant atoms in the channel will no longer be macroscopic, typically less than a hundred. A spatial distribution of these dopant atoms will fluctuate statistically from device to device even in identically designed devices, and this places a serious limitation for integration. It is, however, impractical to control dopant positions within atomic dimension. One fundamental solution to this problem is to create electronics with atomically precise, but preferably simple structures. Atomic chains, precise structures of adatoms created on an atomically regulated surface, are candidates for constituent components in future electronics. All the adatoms will be placed at designated positions on the substrate, and all the device structures will be precise, free from any deviations. It was predicted using the tight-binding calculation with universal parameters that silicon chains were metallic and magnesium chains were semiconducting regardless of the lattice spacing, and a possible doping method was also proposed. In these treatments, the substrate was assumed to serve as a non-interacting template holding the adatoms without a formation of chemical bonding with substrate atoms. However, this scheme may not be easy to implement experimentally. Adatoms will have to be fixed with a van der Waals force on the substrate, but the force is generally weak and an extremely low temperature environment has to be prepared to suppress their unwanted thermal displacement. It may be logical to seek a scheme to allow the adatoms to form chemical bonding with the substrate atoms and secure their positions. The substrate effects are studied in detail.

Yamada, Toshishige↗

Substrate Effects for Atomic Chain Electronics

A substrate for future atomic chain electronics, where adatoms are placed at designated positions and form atomically precise device components, is studied theoretically. The substrate has to serve as a two-dimensional template for adatom mounting with a reasonable confinement barrier and also provide electronic isolation, preventing unwanted coupling between independent adatom structures. For excellent structural stability, we demand chemical bonding between the adatoms and substrate atoms, but then good electronic isolation may not be guaranteed. Conditions are clarified for good isolation. Because of the chemical bonding, fundamental adatom properties are strongly influenced: a chain with group IV adatoms having two chemical bonds, or a chain with group III adatoms having one chemical bond is semiconducting. Charge transfer from or to the substrate atoms brings about unintentional doping, and the electronic properties have to be considered for the entire combination of the adatom and substrate systems even if the adatom modes are well localized at the surface.

Yamada, Toshishige↗

Substrate Effects on Electronic Properties of Atomic Chains

Atomic chains, precise structures of adatoms created on an atomically regulated surface, are candidates for constituent elements in future electronics. It was predicted that Si chains were metallic and Mg chains were semiconducting, and a doping method was also discussed. The substrate was assumed to work as a non-interacting template holding the adatoms. However, this scheme requires a low-temperature environment so that the adatoms will not displace from their ideal positions due to unwanted thermal agitation. For better structural stability, we may seek a scheme to allow the adatoms to form chemical bonding with the substrate atoms and secure their positions. The chemical bonding has two major effects on the chain electronic properties. First, only the remaining s and p orbitals in an adatom not used for the chemical bonding can decide chain band structures, rather than the full set of orbitals previously assumed. Second, because of a possible HOMO energy difference between adatom and substrate atom, semiconducting chains are unintentionally doped. These effects are studied with a self-consistent tight-binding method with universal parameters. With one adatom per unit cell, adatom chains are semiconducting: (1) if adatoms are of group III and form one chemical bond per adatom, or (2) if adatoms are of group IV and form two chemical bonds. 'Me previous result [I I of realizing semiconducting chains by group II adatoms without chemical bonds is consistent with this picture. When the HOMO energy in an adatom is shallower than that in a substrate atom, the entire chain is positively polarized, unintentionally achieving p-type doping. When deeper, the chain is negatively charged, achieving n-type doping.

Yamada, Toshishige↗

Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

Xing, G. C.↗

Porous glass makes effective substrate for ozone-sensing reagent

Porous-glass substrate is used for absorption of a dye used in measuring the concentration of atmospheric ozone at high altitudes. This measurement is based on the chemiluminescence produced in the reaction between ozone and the dye, rhodamine B. The porous glass provides a large interstitial surface area which promotes this reaction.

Source record↗

Substrate Effects on Electronic Properties of Adatom Chains

About VI author/originator verification in form 1676: (1) There is no export controlled, confidential commercial information. (2) Regarding the patent, the technical field covered here is related to ARC-14246, 'Doping Method of Semiconducting Atomic Chains." Most results are covered by ARC-14246.

Toshishige, Yamada↗

Effects of substrate deformation and sip thickness on tile/sip interface stresses for shuttle thermal protection

A nonlinear analysis was used to study the effects of substrate deformation characteristics and strain isolator pad (SIP) thickness on TILE/SIP interface stresses for the space shuttle thermal protection system. The configuration analyzed consisted of a 5.08 cm thick, 15.24 cm square tile with a 12.7 cm square SIP footprint bordered by a 1.27 cm wide filler bar and was subjected to forces and moments representative of a 20.7 kPa aerodynamic shock passing over the tile. The SIP stress deflection curves were obtained after a 69 kPa proof load and 100 cycles conditioning at 55 kPa. The TILE/SIP interface stresses increase over flat substrate values for zero to peak substrate deformation amplitudes up to 0.191 cm by up to a factor of nearly five depending on deformation amplitude, half wave length, and location. Stresses for a 0.23 cm thick SIP found to be up to 60 percent greater than for a 0.41 cm thick SIP for identical loads and substrate deformation characteristics. A simplified method was developed for approximating the substrate location which produces maximum TILE/SIP interface stresses.

Shore, C. P.↗

Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

Radulescu, D. C.↗

Effects of substrates and phosphate on INT (2-(4-iodophenyl)-3-(4-nitrophenyl)-5-phenyl tetrazolium chloride) and CTC (5-cyano-2,3-ditolyl tetrazolium chloride) reduction in Escherichia coli

The effects of substrates of primary aerobic dehydrogenases, and inorganic phosphate on aerobic INT and CTC reduction in Escherichia coli were examined. In general, INT produced less formazan than CTC, but INT (+) cell counts remained near values of CTC (+) cells. INT and CTC (+) cell numbers were higher than plate counts on R2A medium using succinate, formate, lactate, casamino acids, glucose, glycerol (INT only) and no substrate. Formate resulted in the greatest amount of INT and CTC formazan. Reduction of both INT and CTC was inhibited above 10 mmol l-1 phosphate, and this appeared to be related to decreased rates of O2 consumption. Formation of fluorescent CTC (+), but not INT (+) cells was also inhibited in a concentration dependent manner by phosphate above 10 mmol l-1. From light microscopic observations it appeared CTC formed increasing amounts of poorly or non-fluorescent formazan with increasing phosphate. Therefore, use of phosphate buffer in excess of 10 mmol l-1 may not be appropriate in CTC and INT reduction assays.

NASA Program Environmental Health↗

Deposition rate and substrate temperature effects on the structure and properties of bulk-sputtered OFHC Cu and Cu-0.15Zr

Bulk-sputtered OFHC Cu and Cu-0.15 Zr used as inner walls of advanced regeneratively cooled thrust chambers are evaluated as to microstructure, surface topography, and fractography. It is found that under conditions of low substrate temperature, crystallite size and openness of the structure increase with increasing deposition rate for both materials. At elevated temperatures, an equiaxed ductile structure of OFHC Cu is produced only at low deposition rates; at higher deposition rate, open structures are observed with recrystallized equiaxed grains within large poorly bonded crystallites. The Cu-0.15 Zr alloy sputtered from the hollow cathode using a diode discharge shows open-type structures for all conditions evaluated. The use of a triode discharge in generating a dense non-voided structure of Cu-0.15 Zr is discussed.

Hecht, R. J.↗

The Effects of Substrate Material and Thermal Processing Atmosphere on the Strength of PS304: A High Temperature Solid Lubricant Coating

PS304, a plasma spray deposited solid lubricant coating developed for high temperature sliding contacts was deposited on nine different substrate metals, heat treated at 650C in either air or argon and subsequently tested for strength using a commercially available pull-off adhesion test. Some samples were examined metallographically to help elucidate and explain the results. As deposited coatings exhibit pull-off strengths typically between 16 and 20 MPa with failure occuring (cohesively) within the coating. Heat treatment in argon at 650 C results in a slight increase in coating (cohesive) strength of about 30 percent to 21 to 27 MPa. Heat treatment in air at 650 C results in a dramatic increase in strength to over 30 MPa, exceeding the strength of the epoxy used in the pull test. Cross section metallographic analyses show that no microstructural coating changes occur following the argon heat treatments, however, exposure to air at 650C gives rise to the formation of a second chromium-rich phase precipitate within the PS304 NiCr constituent which provides a strengthening effect and a slight (approximately 5 percent) coating thickness increase. Subsequent heat treatments do not result in any further coating changes. Based upon these studies, PS304 is a suitable coating for use on a wide variety of high temperature substrates and must be heat treated following deposition to enhance strength and ensure dimensional stability.

DellaCorte, Christopher↗

Effect of substrate chemical pretreatment on the tribological properties of graphite films

Rubbed films of natural flake Madagascar graphite were applied to ASTM A-355(D) steel with chemical surface pretreatments of zinc phosphate, gas nitride, salt nitride, sulfo-nitride, and with mechanical pretreatment (sandblasting). SAE 1045 steel pins were slid against these films using a pin-on-disk tribometer. The results indicate that two different lubricating mechanisms can occur. In the chemical surface pretreatment, the graphite can mix together to form a surface layer of the two constituents and this plasticity flowing layer provides the lubrication. The longest endurance lives and the lowest pin wear rates were obtained with this mechanism. In the other, surface topography appeared to control the mechanism. A rough surface was necessary to serve as a reservoir to supply the graphite to the flat metallic plateaus where it was sheared in very thin films between the plateaus and the sliding pin surface. For this mechanism, chemical pretreatment seemed to do little more than serve as a means for roughening the surface. Mean friction was not significantly influenced by chemical pretreatment, but surface roughness effects were observed.

Fusaro, R. L.↗

Lubrication and failure mechanisms of molybdenum disulfide films. 2: Effect of substrate roughness

An optical microscope was used to study the lubrication and failure mechanisms of rubbed MoS2 films applied to three substrate surface finishes; polished, sanded, and sandblasted as a function of sliding distance. The lubrication mechanism was the plastic flow of thin films of MoS2 between flat plateaus on the rider and on the metallic substrate. If the substrate was rough, flat plateaus were created during run-in and the MoS2 flowed across them. Wear life was extended by increasing surface roughness since valleys in the roughened substrate served as reservoirs for MoS2 and as deposit sites for wear debris. In moist air the failure mechanism was the transformation of metallic colored MoS2 films to a black, powdery material that was found by X-ray diffraction to be alpha iron, MoO3, and possibly FeMoO3. In dry argon the failure mechanism was the gradual depletion of MoS2 from the contact region by transverse flow, and the wear debris on the track at failure was alpha iron, residual MoS2, and possibly FeS.

Fusaro, R. L.↗

Effect of Substrate Surface Finish on the Lubrication and Failure Mechanisms of Molybdenum Disulfide Films

An optical microscope was used to study the lubrication and failure mechanisms of rubbed (burnished) MoS2 films applied to three substrate surface finishes - polished, sanded, and sandblasted - as a function of sliding distance. The lubrication mechanism was the plastic flow of thin films of MoS2 between flat plateaus on the rider and on the metallic substrate. If the substrates were rough, flat plateaus were created during 'run in' and the MoS2 flowed across them. Wear life was extended by increasing surface roughness since valleys in the roughened substrate served as reservoirs for MoS2 and a deposit site for wear debris. In moist air, the failure mechanism was the transformation of metallic colored MoS2 films to a black, powdery material that was found by X ray diffraction to consist primarily of alpha iron and MoO3 powders. In dry argon, the failure mechanism was the gradual depletion of the MoS2 film from the contact region by transverse flow. Analysis of the wear debris on the wear track at failure showed it consisted mainly of alpha iron and some residual MoS2. No molybdenum oxides were found.

Fusaro, R. L.↗

Effect of substrate surface finish on the lubrication and failure mechanisms of molybdenum disulfide films

An optical microscope was used to study the lubrication and failure mechanisms of rubbed (burnished) MoS2 films applied to three substrate surface finishes - polished, sanded, and sandblasted - as a function of sliding distance. The lubrication mechanism was the plastic flow of thin films of MoS2 between flat plateaus on the rider and on the metallic substrate. If the substrate was rough, flat plateaus were created during 'run-in' and the MoS2 flowed across them. Wear life was extended by increasing surface roughness since valleys in the roughened substrate served as reservoirs for MoS2 and a deposit site for wear debris. In moist air, the failure mechanism was the transformation of metallic-colored MoS2 films to a black, powdery material that was found by X-ray diffraction to consist primarily of alpha-iron and MoO3 powders. In dry argon, the failure mechanism was the gradual depletion of the MoS2 film from the contact region by transverse flow. Analysis of the wear debris on the wear track at failure showed it consisted mainly of alpha-iron and some residual MoS2. No molybdenum oxides were found.

Fusaro, R. L.↗

Effect of substrate preparation on the structure and chemisorption properties of Pd/MgO model catalyst

Pd/MgO model catalysts are prepared by vapor deposition of Pd particles on MgO thin films which are deposited, at different temperatures, on UHV cleaved mica. MgO films and Pd particles are characterized in situ by Auger electron spectroscopy and energy-loss spectroscopy and ex situ by transmission electron microscopy. Succesive temperature programmed desorption (TPD) of CO shows a different evolution of the morphology of the Pd particles deposited on MgO films prepared at low and high temperature. In addition, on MgO prepared at low temperature, the smallest particles show a continuous decay of CO adsorption during TPD due to contamination by support species.

Henry, C. R.↗