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Observation of interface piezoelectricity in superconducting devices on silicon
The development of superconducting quantum processors relies on understanding and mitigating decoherence in superconducting qubits. Piezoelectric coupling contributes to decoherence by mediating energy exchange between microwave photons and acoustic phonons. Although bulk centrosymmetric materials like silicon and sapphire are non-piezoelectric and commonly used as qubit substrates, the lack of centrosymmetry at interfaces may induce piezoelectric losses. This effect was predicted decades ago but never experimentally observed in superconducting devices. Here, we report interface piezoelectricity at aluminum-silicon junctions and demonstrate it as a significant loss channel in superconducting devices. Using aluminum interdigital transducers on silicon, we observe piezoelectric transduction from room to millikelvin temperatures, with an effective electromechanical coupling factor K 2 ≈ (3 ± 0.4) × 10−5%, comparable to weakly piezoelectric substrates. Modeling shows this mechanism limits qubit quality factors to Q ~ 10 4 − 10 8 , depending on surface participation and mode matching. These findings reveal interface piezoelectricity as a major dissipation channel and highlight the need for heterostructure and phononic engineering in next-generation superconducting qubits.
Analog-to-digital converter based on voltage-controlled superconducting devices
The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.
Simulating Superconducting Devices in Novel Materials Using the G4CMP Simulation Toolkit
Understanding the kinematics of phonons and charge propagation in superconducting devices is crucial for conducting low-threshold dark matter searches and minimizing correlated errors in superconducting qubits. For nearly a decade, the Geant4 Condensed Matter Physics (G4CMP) package, originally developed for the Cryogenic Dark Matter Search (CDMS) experiment, has been limited to simulating charge and phonon transport in silicon and germanium materials. In this work, we have expanded the capabilities of G4CMP to include novel substrate materials such as sapphire (Al2O3), Gallium Arsenide (GaAs), Lithium Fluoride (LiF), Calcium Tungstate (CaWO4), and Calcium Fluoride (CaF2). We demonstrate the use of this toolkit in generating phonon transport properties for these materials and compare the results with experimentally determined values where available. Additionally, we explore the performance of superconducting devices utilizing these materials.
A role for high frequency superconducting devices in free space power transmission systems
Major advances in space power technology are being made in photovoltaic, solar thermal, and nuclear systems. Despite these advances, the power systems required by the energy and power intensive mission of the future will be massive due to the large collecting surfaces, large thermal management systems, and heavy shielding. Reducing this mass on board the space vehicle can result in significant benefits because of the high cost of transporting and moving mass about in space. An approach to this problem is beaming the power from a point where the massiveness of the power plant is not such a major concern. The viability of such an approach was already investigated. Efficient microwave power beam transmission at 2.45 GHz was demonstrated over short range. Higher frequencies are desired for efficient transmission over several hundred or thousand kilometers in space. Superconducting DC-RF conversion as well as RF-DC conversion offers exciting possibilities. Multivoltage power conditioning for multicavity high power RF tubes could be eliminated since only low voltages are required for Josephson junctions. Small, high efficiency receivers may be possible using the reverse Josephson effects. A conceptual receiving antenna design using superconducting devices to determine possible system operating efficiency is assessed. If realized, these preliminary assessments indicate a role for superconducting devices in millimeter and submillimeter free space power transmission systems.
Magnetic Penetration Effects in Small Superconducting Devices
The temperature dependent behavior of a superconducting body in an applied magnetic field involves flux penetration/expulsion both from screening currents (within a magnetic penetration depth) and variations in the superconducting order parameter (locally to form vortices or a mixed state, or globally in the Meissner effect). The temperature dependence of the magnetic penetration depth, in particular, has been used to make highly sensitive macroscopic thermometers. For the microscopic device volumes required in sensitive low temperature photon detectors, properties of actual thin film materials, non-uniformity of applied magnetic fields, and the influence of measurement circuit dynamics are complicating factors. We discuss the various penetration effects as demonstrated in a particularly promising combination of material and geometry that we have used to make sensitive x-ray microcalorimeters.
Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices
Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for pentoxides of Nb (Nb2O5) and Ta (Ta2O5) in order to further understand limiting losses in qubits. Nb and Ta pentoxides of three thicknesses are deposited via pulsed laser deposition onto identical coplanar waveguide resonators. The two-level system (TLS) loss in Nb2O5 is determined to be about 30% higher than that of Ta2O5. This work indicates that qubits with Nb wiring are affected by higher loss arising from the native pentoxide itself, likely in addition to the presence of suboxides, which are largely absent in Ta.
Superconductivity devices: Commercial use of space
High T sub C superconducting thick film were prepared by a screen printing process. Y-based (YBa2Cu3O(7-x) superconducting thick film were printed on 211/Al2O3, SNT/Al2O3, and YSZ substrates. Because of poor adhesion of the superconductor thick films to 211/Al2O3 and SNT/Al2O3 substrates, relatively low T sub C and J sub C values were obtained from the films printed on these substrates. Critical temperatures (T sub C) of YBa2Cu3O(7-x) thick films deposited on 211/Al2O3 and SNT/Al2O3 substrates were about 80 K. The critical current densities (J sub C) of these films were less than 2 A/sq cm. Higher T sub C and J sub C YBa2Cu3O(7-x) thick films were printed on YSZ substrates. A YBa2Cu3O(7-x) thick film with T sub C=86.4 and J sub C= 50.4 A/sq cm was prepared by printing the film on YSZ substrate and firing at 990 C for 10 minutes. Multiple-lead samples were also prepared on the YSZ substrates. The multiple-lead samples showed lower T sub C and/or J sub C values than those of the plain samples. The electrical properties of YBa2Cu3O(7-x) thick films were determined by the microstructures of the films. The YBa2Cu3O(7-x) thick films printed on the YSZ substrates, which had the best properties among the films printed on the three different kinds of substrates, had the highest density and the best particle interconnection. The YBa2Cu3O(7-x) thick films with preferred orientation in (001) direction were obtained on the YSZ substrates. Cracks, which retard the properties of the films, were found from the films deposited on the YSZ substrates. Currently, a MSZ (Magnesium Stabilized Zirconia) substrate, which had higher thermal expansion coefficient than the YSZ substrate, is used as substrate for the YBa2Cu3O(7-x) thick film in order to eliminate the cracks on the film. Bi-based superconductor thick films were printed on polycrystalline MgO and YSZ substrates. Interactions between BSCCO thick films and the YSZ substrates were observed. Various buffer layer materials were applied onto the substrates in order to avoid the interactions between the BSCCO thick films and the ZrO2-based substrates. So far, a BSCCO printed on MgO substrate with T Sub C=89K was obtained. The J sub C of the film was lower than 0.1 A/sq cm by reason of poor interconnectivity of the BSCCO particles.
Superconductivity devices: Commercial use of space
The high T(sub c) superconducting ceramic materials, developed in 1987, are now being extensively investigated for a variety of engineering applications. These applications include such devices as conducting links, rotating and linear bearings, sensors, filters, switches, high Q cavities, magnets, and motors. Some of these devices take advantage of the material's ability to lose all electrical resistance at a critical temperature, T(sub c), while others make use of the repulsion forces generated between the magnetic field of a permanent magnet and a superconductor which is cooled below its T(sub c), Meissner effect. This report describes the work accomplished to date by: (1) reviewing the present state of the art in actuator technology, (2) evaluating processing and fabrication of high strain electrostrictive materials, and (3) testing these electrostrictive materials.
Superconductivity devices: Commercial use of space
The processing and screen printing of the superconducting BSCCO and 123 YBCO materials on substrates is described. The resulting superconducting properties and the use of these materials as possible electrode materials for ferroelectrics at 77 K are evaluated. Also, work performed in the development of solid-state electromechanical actuators is reported. Specific details include the fabrication and processing of high strain PBZT and PLZT electrostrictive materials, the development of PSZT and PMN-based ceramics, and the testing and evaluation of these electrostrictive materials. Finally, the results of studies on a new processing technology for preparing piezoelectric and electrostrictive ceramic materials are summarized. The process involves a high temperature chemical reduction which leads to an internal pre-stressing of the oxide wafer. These reduced and internally biased oxide wafers (RAINBOW) can produce bending-mode actuator devices which possess a factor of ten more displacement and load bearing capacity than present-day benders.
Impact of surface growth method and surface treatment in niobium-based superconducting devices
We explore the comparison between two growth methods for niobium film - sputtering and electron-cyclotron resonance growth - for niobium-based superconducting resonators. We discuss some of the key properties of the films, including surface characterization and residual resistance measurements metrics. We present our design of various devices used in this study including superconducting resonators and qubits, both in planar configurations and integrated in 3D cavities, as well as experimental characterization of coherence metrics.
Advanced superconducting devices for high-performance computing
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Preformed Superconductive Devices
Process forms high-temperature superconductors into electrical components as connectors, coils, and conductors. Brittleness no obstacle because material preformed before heated to turn it into ceramic. Substrates made of glass-fiber-reinforced circuit-board material, reduce leakage of heat into ceramic, unlike silver or copper substrates used in making sintered-in-place superconducting ceramics.
Superconductivity devices: Commercial use of space
A YBCO thick film containing 20 percent Ag2O with a T(sub c) of 86.8 K and J(sub c) of 108 A/sq cm was obtained. The film was fabricated by a two-step firing process, i.e., firing the film at 1000 C for 10 minutes and annealing at 970 C for 30 minutes. The two-step firing process, however, was not suitable for the multiple-lead YBCO sample due to the formation of the 211 green phase at 1000 C in the multiple-lead YBCO sample. A BSCCO thick film printed on a MgO coated MSZ substrate and fired at 845 C for 2 hours exhibited a superconducting behavior at 89 K. Because of its porous microstructure, the critical current density of the BSCCO thick film was limited. This report also includes the results of the YBCO and BSCCO materials used as oxide electrodes for ferroelectric materials. The YBCO electroded PLZT showed higher remanent polarization and coercive field than the sample electroded with silver paste. A higher Curie temperature for the PLZT was obtained from the YBCO electroded sample. The BSCCO electroded sample, however, exhibited the same Curie temperature as that of a silver electroded sample. Dissipation factors of the ferroelectric samples increased when the oxide electrode was applied.
XeF 2 gas assisted focused electron beam induced etching of niobium thin films: towards direct write editing of niobium superconducting devices
Focused electron beam induced etching (FEBIE) of Nb films produced a maximum etching yield of 3 Nb atoms/e − while varying beam energy, beam current, dwell time, and XeF 2 precursor working pressure. An optimized etch resolution of 17 nm was achieved.
Cryogenic optical beam steering for superconducting device calibration
We have developed a calibration system based on a micro-electromechanical systems (MEMS) mirror that is capable of delivering an optical beam over a wavelength range of 180 -- 2000 nm (0.62 -- 6.89 eV) in a sub-Kelvin environment. This portable, integrated system can steer the beam over a $\sim$3 cm $\times$ 3 cm area on the surface of any sensor with a precision of $\sim$100 $μ$m, enabling characterization of device response as a function of position. This fills a critical need in the landscape of calibration tools for sub-Kelvin devices, including those used for dark matter detection and quantum computing. These communities have a shared goal of understanding the impact of ionizing radiation on device performance, which can be pursued with our system. This paper describes the design of the first-generation calibration system and the results from successfully testing its performance at room temperature and 20 mK.
Microelectronic fabrication of superconducting devices and circuits
It is expected that thin-film superconductors can be used as detectors or sources of infrared and microwave radiation, as magnetometers, as voltage standards, and for voltage and current measurements, for electronic signal processing, and in digital circuitry.
Design of Cryocoolers for Microwatt Superconducting Devices
The primary applications of the cryocoolers are for cooling various Josephson devices such as SQUID magnetometers and amplifiers, voltage standards, and microwave mixers and detectors. The common feature of these devices is their extremely low inherent bias power requirement, of the order of 10/1 W per junction. This provides the possibility of designing compact, low-power cryocoolers for these applications. Several concepts were explored and a number of laboratory model cryocoolers were built. These include low-power nonmagnetic regenerative machines of the Stirling or Gifford-McMahon type, three or four-stage Joule-Thomson machines, liquid-helium dewars with integral small cryocoolers to reduce the evaporation rate, and liquid-helium dewars with integral continuously or intermittently operated small helium liquefiers to permit operation of cryogenic devices for indefinite time periods.