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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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12 records

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NASA NTRS1999

The Future of Electronic Device Design: Device and Process Simulation Find Intelligence on the World Wide Web

We are on the path to meet the major challenges ahead for TCAD (technology computer aided design). The emerging computational grid will ultimately solve the challenge of limited computational power. The Modular TCAD Framework will solve the TCAD software challenge once TCAD software developers realize that there is no other way to meet industry's needs. The modular TCAD framework (MTF) also provides the ideal platform for solving the TCAD model challenge by rapid implementation of models in a partial differential solver.

Biegel, Bryan A.↗

NASA NTRS2015

Role of Clouds, Aerosols, and Aerosol-Cloud Interaction in 20th Century Simulations with GISS ModelE2

We use the new version of NASA Goddard Institute for Space Studies (GISS) climate model, modelE2 with 2º by 2.5º horizontal resolution and 40 vertical layers, with the model top at 0.1 hPa [Schmidt et al., 2014]. We use two different treatments of the atmospheric composition and aerosol indirect effect: (1) TCAD(I) version has fully interactive Tracers of Aerosols and Chemistry in both the troposphere and stratosphere. This model predicts total aerosol number and mass concentrations [Shindell et al., 2013]; (2) TCAM is the aerosol microphysics and chemistry model based on the quadrature methods of moments [Bauer et al., 2008]. Both TCADI and TCAM models include the first indirect effect of aerosols on clouds [Menon et al., 2010]; the TCAD model includes only the direct aerosol effect. We consider the results of the TCAD, TCADI and TCAM models coupled to "Russell ocean model" [Russell et al., 1995], E2-R. We examine the climate response for the "historical period" that include the natural and anthropogenic forcings for 1850 to 2012. The effect of clouds, their feedbacks, as well as the aerosol-cloud interactions are assessed for the transient climate change.

climate models↗

NASA NTRS2008

Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM s state is shown to be based upon the resistive path from the p+-sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are then predicted and compared to recent SRAM test data.

Black, J. D.↗

NASA NTRS2009

High-Speed Single-Event Current Transient Measurements in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: 1) Position correlation. 2) Unique response for different bias schemes. 3) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: 1) Feedback using microbeam data 2) Overcome existing issues of LET and ion range with microbeam Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

Pellish, Jonathan A.↗

NASA NTRS2009

Simulation of SRAM SEU Sensitivity at Reduced Operating Temperatures

A new NanoTCAD-to-Spectre interface is applied to perform mixed-mode SEU simulations of an SRAM cell. Results using newly calibrated TCAD cold temperature substrate mobility models, and BSIM3 compact models extracted explicitly for the cold temperature designs, indicate a 33% reduction in SEU threshold for the range of temperatures simulated.

Sanathanamurthy, S.↗

NASA NTRS2009

Heavy Ion Current Transients in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

Pellish, Jonathan A.↗

NASA NTRS2009

Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

Pellish, Jonathan A.↗

NASA NTRS2010

Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

A Technology Computer Aided Design (TCAD) simulation-based method is developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for single-event gate rupture (SEGR) from much higher energy on-orbit ions for a mission linear energy transfer (LET) requirement. It is shown that a typical derating factor of 0.75 applied to a single-event effect (SEE) response curve defined by high-energy accelerator SEGR test data provides reasonable on-orbit hardness assurance, although in a high-voltage power MOSFET, it did not bound the risk of failure.

Lauenstein, J. M.↗

NASA NTRS2017

Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Javanainen, Arto↗

NASA NTRS2016

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

modeling↗

NASA NTRS2022

Mechanisms of Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Single Event Transients in an Epitaxial Silicon Diode

Heavy ion-, focused X ray-, and pulsed laser induced single event effects in an epitaxial silicon diode were simulated using Sentaurus Technology Computer Aided Design (TCAD). The variation of the potential with time in simulation agrees with previous experimental data, which suggests that the different radiation sources result in different amounts of potential modulation. The charge generation spatial profile strongly affects the potential modulation. The longitudinal range and starting location of generated charge most strongly impacts the amount of potential modulation, while the radial width has a slight effect, and the temporal duration of charge injection has negligible impact on potential modulation

Kaitlyn L. Ryder↗

NASA NTRS2006

Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices

We illustrate inherent differences between Single Event Transients generated by an above bandgap picosecond lasers and MeV heavy ions by comparing transient currents collected with an ion microbeam and picosecond laser with varying track waist.

TCAD↗