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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Structural changes across thermodynamic maxima in supercooled liquid tellurium: a water-like scenario

Liquid polymorphism is an intriguing phenomenon which has been found in a few single-component systems, the most famous being water. By supercooling liquid Te to more than 130 K below its melting point and performing simultaneous small-angle and wide-angle X-ray scattering measurements, we observe clear maxima in its thermodynamic response functions around 615 K, suggesting the possible existence of liquid polymorphism. A close look at the underlying structural evolution shows the development of intermediate-range order upon cooling, most strongly around the thermodynamic maxima, which we attribute to bond-orientational ordering. The striking similarities between our results and those of water, despite the lack of hydrogen-bonding and tetrahedrality in tellurium, indicate that water-like anomalies may be a general phenomenon among liquid systems with competing bond- and density-ordering.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Study of the structure of crystalline tellurium on different substrates

The epitaxial growth of tellurium films by chemical vapor deposition is investigated. It is established that, under thermochemical activation conditions, tellurium films grow from vapor phase in the (10 1̄0) plane, parallel to the (001) muscovite substrate and the (0001) sapphire substrate. It is demonstrated that tellurium films on (001) muscovite substrates are more homogeneous and can be detached from the substrate, which makes them interesting for carrying out experiments on epitaxy of CdTe films. Tellurium films on sapphire are more heterogeneous and mosaic; however, their growth is accompanied by the formation of hexagonal tellurium microtubes with a high aspect ratio: a diameter of ~1–10 μm and a length of ~1–10 mm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Mid-Infrared Photoluminescence from Tellurium Thin Films

Tellurium is an elemental semiconductor with a 0.34 eV optical band gap, showing promise for mid-infrared (MIR) optoelectronics including light-emitting diodes. However, quantitative measurement of the tellurium luminescence efficiency has not yet been investigated, and growing optically active films remain challenging. Here, we demonstrate the low-temperature growth of bright tellurium thin films by using physical vapor transport. The sample morphology is controlled by varying the growth temperature, yielding continuous thin films, microparticles, or nanowires. Additionally, we demonstrated patterned growth by using a seed layer for selective nucleation. Quantitative photoluminescence measurements at room temperature reveal an internal quantum yield of 2.0% at 0.34 eV for the as-grown tellurium films, comparable to the best-reported efficiencies of III-V and II-VI compound semiconductors with similar band gaps. Furthermore, we demonstrate band-gap tunability with Te-Se alloys, where up to 20% selenium incorporation gradually blue-shifts the band gap to 0.55 eV. The work demonstrates the potential use of tellurium for efficient MIR devices.

Wang, Shu↗
DOE OSTI2016

Tellurium-based nanocomposites for plastic electronic applications

Owing to the very brittle nature of the tellurium powder, nanoscopic grains with average size of 4.8 nm were produced by dry vibration milling technique using a Mixer mill apparatus. A novel material was obtained by binding the nanosized tellurium grains with poly(methyl methacrylate) (PMMA). The morphology, elemental composition, and structural properties of Te/PMMA films were investigated. The prepared material was composed of hexagonal tellurium and α-phase of tellurium oxide. The electrical properties of the films were studied in dark condition and under white light illumination varying the optical power density from 10 to 170 mW/cm{sup 2} and turning on and off the light cyclically.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Sulfide Transformation with Tellurium Treatment for Y15 Free-Cutting Steel

To investigate the effect of tellurium on the morphology of sulfide, various amounts of tellurium powders were added to the Y15 free-cutting commercial steel melt and then the melt was cooled in different cooling modes. The composition and morphology of sulfide and telluride in steel were analyzed to investigate the mechanism of MnS transformation combined with in situ observation. The results showed that the precipitation of chain-like MnS inclusions was significantly inhibited due to the addition of tellurium, and these MnS inclusions were transformed into complex inclusions with lower aspect ratios, which were composed of MnS and MnTe. In air-cooling mode, the MnS inclusions were effectively spheroidized when the w([Te])/w([S]) in steel was 0.2, whereas tellurium had almost no effect on the morphology of sulfide in furnace-cooling mode. The mechanism of sulfide spheroidization is discussed. The mechanism was verified by in situ observation experiment through high-temperature laser confocal microscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Intrinsic helical twist and chirality in ultrathin tellurium nanowires

Robust atomic-to-meso-scale chirality is now observed in the one-dimensional form of tellurium. This enables a large and counter-intuitive circular-polarization dependent second harmonic generation response above 0.2 which is not present in two-dimensional tellurium. Orientation variations in 1D tellurium nanowires obtained by four-dimensional scanning transmission electron microscopy (4D-STEM) and their correlation with unconventional non-linear optical properties by second harmonic generation circular dichroism (SHG-CD) uncovers an unexpected circular-polarization dependent SHG response from 1D nanowire bundles – an order-of-magnitude higher than in single-crystal two-dimensional tellurium structures – suggesting the atomic- and meso-scale crystalline structure of the 1D material possesses an inherent chirality not present in its 2D form; and which is strong enough to manifest even in the aggregate non-linear optical (NLO) properties of aggregates.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Exfoliation energy, quasiparticle band structure, and excitonic properties of selenium and tellurium atomic chains

Effects that are not captured by the generalized-gradient density-functional theory have a prominent effect on the structural binding and on the electronic and optical properties of reduced-dimensional and weakly bound materials. Here, we report the exfoliation energy of selenium and tellurium atomic chains with nonempirical van der Waals corrections, and their electronic and optical properties with the GW and Bethe-Salpeter formalisms. The exfoliation energy is found to be within 0.547–0.719 eV/u.c. for the selenium atomic chain, and 0.737–0.926 eV/u.c. for the tellurium atomic chain (where u.c. stands for unit cell), depending on the approximation for the van der Waals interaction and the numerical tool chosen. The GW electronic band gap turned out to be 5.22–5.47 (4.44–4.59) eV for the Se (Te) atomic chains, with the lowest bound obtained with the Godby-Needs (GN), and the upper bound to the Hybertsen-Louie (HL) plasmon-pole models (PPMs). The binding energy of the ground-state excitonic state ranges between 2.69 and 2.72 eV for selenium chains within the HL and GN PPM, respectively, and it turned out to be 2.35 eV for tellurium chains with both approximations. In conclusion, the ground-state excitonic wave function is localized within 50 Å along the axis for both types of atomic chains, and its energy lies within the visible spectrum: blue [2.50(GN)–2.78(HL) eV] for selenium and yellow-green [2.09(GN)–2.28(HL) eV] for tellurium, which could be useful for LED applications in the visible spectrum.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Tellurium Corrosion of Type 304/304L Stainless Steel, Iron, Chromium, and Nickel in High-Temperature Liquid Sodium

Investigating tellurium (Te) corrosion on structural materials is crucial for sodium-cooled fast reactors (SFRs) due to radionuclide presence and knowledge gaps. In this study, Type 304/304L stainless steel (SS304), chromium (Cr), iron (Fe), and nickel (Ni) samples were immersed in low-oxygen environments with Te in liquid sodium at 773 K for 30 days. At 10 ppm oxygen, SS304 showed multiple oxide layers, including a compact NaCrO 2 interlayer and porous Na-Fe-Ni-O outer layers. Tellurium penetrated through the porous layers but was hindered by the NaCrO 2 interlayer. At 0.01 ppm oxygen, Cr had no oxide layer, while Fe and Ni had unstable ones. Tellurium-induced pitting was deeper in Fe and Ni compared to Cr. Oxygen levels and Cr composition are critical factors affecting stable oxide compound layer formation and mitigating Te-induced pitting.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Tellurium n-type doping of highly mismatched amorphous GaN 1-x As x alloys in plasma-assisted molecular beam epitaxy

In this paper we report our study on n-type Te doping of amorphous GaN 1-x As x layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN 1-x As x layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN 1-x As x layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN 1-x As x layers has been determined.

Novikov, S. V.↗
DOE OSTI2022

Desorption characteristics of selenium and tellurium thin films

The temperature-dependent desorption behavior of selenium and tellurium is investigated using a heated quartz crystal microbalance. Prior to heating the quartz crystal microbalance, selenium and tellurium films with varying thickness were deposited using thermal effusion cells in a molecular beam epitaxy system for subsequent determination of temperature-dependent mass loss of the deposited films. The desorption rate for tellurium was found to exhibit one sharp peak around 190°C, indicating the loss of the entire film irrespective of film thickness within a temperature window of 20°C, which was completely evaporated at 200°C. Similar experiments for selenium revealed that the thermal desorption took place via a two-stage process with a smaller portion of the material desorbing within an even narrower temperature window of 5°C at a much lower peak temperature of 65°C, while most selenium desorbed within a temperature range of 10°C around 90°C. This two-stage behavior indicated the presence of at least two chemically distinct selenium species or binding states. The direct and quantitative determination of the chalcogen desorption process provides important insights into the kinetics of chalcogenide-based film growth and is in addition of applied benefit to the research community in the area of Se/Te capping and decapping of air sensitive materials as it provides temperature ranges and rates at which full desorption is achieved. Our work furthermore points toward the need for a more detailed understanding of the chemical composition state of atomic and molecular beams supplied from thermal evaporation sources during growth.

36 MATERIALS SCIENCE↗
NASA NTRS1968

Technological survey of tellurium and its compounds

Review includes data on the chemical and physical properties of tellurium, its oxides, and fluorides, pertinent to the process problem of handling fission product tellurium in fluoride form. The technology of tellurium handling in nonaqueous processing of nuclear fuels is also reviewed.

Steindler, M. J.↗
DOE OSTI2020

Anode-free, Lean-Electrolyte Lithium-Sulfur Batteries Enabled by Tellurium-Stabilized Lithium Deposition

For realizing practically viable lithium-sulfur (Li-S) batteries, it is imperative to stabilize Li deposition and improve cyclability while reducing excess Li and electrolyte. We have discovered that introducing tellurium (Te) into the Li-S system as a cathode additive significantly improves the reversibility of Li plating and stripping by forming a tellurized and sulfide-rich solid-electrolyte interphase (SEI) layer on the Li surface. A remarkable improvement in cyclability is demonstrated in anode-free full cells with limited Li inventory and large-area Li-S pouch cells under lean electrolyte conditions. Tellurium reacts with polysulfides to generate soluble polytellurosulfides that migrate to the anode side and form stabilizing lithium thiotellurate and lithium telluride in situ as SEI components. A significant reduction in electrolyte decomposition on the Li surface is also engendered. This work demonstrates Te inclusion as a viable strategy for stabilizing Li deposition and establishes a robust evaluation framework for preserving electrochemical performance under limited Li and limited electrolyte conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A method to load tellurium in liquid scintillator for the study of neutrinoless double beta decay

Herein, a method has been developed to load tellurium into liquid scintillator so as to permit searches for neutrinoless double beta decay with high sensitivity. The approach involves the synthesis of an oil-soluble tellurium compound from telluric acid and an organic diol. The process utilises distillable chemicals that can be safely handled underground and affords low radioactive backgrounds, low optical absorption and high light yields at loading levels of at least several percent Te by weight.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2015

Electron Ionization Mass Spectrum of Tellurium Hexafluoride

The first electron ionization mass spectrum of tellurium hexafluoride (TeF6) is reported. The starting material was produced by direct fluorination of Te metal or TeO2 with nitrogen trifluoride. Formation of TeF6 was confirmed through cryogenic capture of the tellurium fluorination product and analysis through Raman spectroscopy. The eight natural abundance isotopes were observed for each of the set of fragment ions: TeF5+, TeF4+ TeF3+, TeF2+, TeF1+, and Te+, Te2+. A trend in increasing abundance was observed for the even fluoride bearing ions: TeF1+ < TeF3+ < TeF5+, and a decreasing abundance was observed for the even fragment series: Te(0)+ > TeF2+ > TeF4+ > TeF6+, with the molecular ion TeF6+ not observed at all. Density functional theory based electronic structure calculations were used to calculate optimized ground state geometries of these gas phase species and their relative stabilities explain the trends in the data and the lack of observed signal for TeF6+.

Tellurium Hexafluoride, Nitrogen Trifluoride, Mass↗
DOE OSTI2015

The synthesis of ternary acetylides with tellurium: Li 2 TeC 2 and Na 2 TeC 2

The synthesis of ternary acetylides Li 2 TeC 2 and Na 2 TeC 2 is presented as the first example of ternary acetylides with metalloid elements instead of transition metals. The synthesis was carried out by the direct reaction of the corresponding bialkali acetylides with tellurium powder in liquid ammonia. Alternatively, the synthesis of Na 2 TeC 2 was also carried out by the direct reaction of tellurium powder and two equivalents of NaC 2 H in liquid ammonia leading to Na 2 TeC 2 and acetylene gas through an equilibrium containing the assumed NaTeC 2 H molecules besides the reactants and the products. The resulting disordered crystalline materials were characterized by X-ray diffraction and Raman spectroscopy. Implications of these new syntheses on the synthesis of other ternary acetylides with metalloid elements and transition metals are also discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗