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Results for “THRESHOLD CURRENT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Very low threshold-current temperature sensitivity in constricted double-heterojunction AlGaAs lasers

The temperature dependence of threshold currents in constricted double-heterojunction diode lasers with strong lateral mode confinement is found to be significantly milder than for other types of lasers. The threshold-current relative variations with ambient temperature are typically two to three times less than for other devices of CW-operation capability. Over the interval 10-70 C the threshold currents fit the empirical exponential law exp/(T2-T1)/T0/ with T0 values in the 240-375 C range in pulsed operation, and in the 200-310 C range in CW operation. The external differential quantum efficiency and the mode far-field pattern near threshold are virtually invariant with temperature. The possible causes of high-T0 behavior are analyzed, and a new phenomenon - temperature-dependent current focusing - is presented to explain the results.

Botez, D.↗
NASA NTRS1977

The influence of stripe width on the threshold current of double-heterojunction lasers

Experimental measurements of the threshold current of oxide-isolated stripe laser as a function of stripe width and p-layer resistivity are presented. A calculation of the influence of carrier outdiffusion has been made, including the effect of current leakage beyond the stripe edges. The calculated threshold increase is in substantial agreement with experiment for stripe widths down to about 10 microns. The data also yield an effective diffusion length of about 7 microns for the lasers studied. Deviations between experimental and calculated thresholds occurring at stripe widths of 4-6 microns are represented by an empirical curve which is compared with previously published calculations of threshold gain.

Ladany, I.↗
NASA NTRS2003

New Voltage and Current Thresholds Determined for Sustained Space Plasma Arcing

It has been known for many years, based partly on NASA Glenn Research Center testing, that high-voltage solar arrays arc into the space plasma environment. Solar arrays are composed of solar cells in series with each other (a string), and the strings may be connected in parallel to produce the entire solar array power. Arcs on solar arrays can damage or destroy solar cells, and in the extreme case of sustained arcing, entire solar array strings, in a flash. In the case of sustained arcing (discovered at Glenn and applied to the design and construction of solar arrays on Space Systems/Loral (SS/Loral, Palo Alto, CA) satellites, Deep-Space 1, and Terra), an arc on one solar array string can couple to an adjacent string and continue to be powered by the solar array output until a permanent electrical short is produced. In other words, sustained arcs produced by arcs into the plasma (so-called trigger arcs) may turn into disastrous sustained arcs by involving other array strings.

Dale C. Ferguson↗
NASA NTRS1990

The effect of neutron irradiation on the properties of AlGaAs/GaAs laser diodes

The effects of neutron irradiation on several properties of both single and multiple stripe laser diodes have been examined. Prior to fast neutron irradiation, total light output as a function of laser current, threshold current, near-field pattern, far-field pattern, and laser output wavelength spectra were measured at room temperature. These measurements were then repeated at intermittent neutron fluence levels. It was observed that the threshold current increased with neutron fluence for all devices examined. In contrast, neutron irradiation had only an indirect effect on the remainder of the laser diode properties in that the higher currents required for operation after irradiation caused variations in these properties.

Barnes, C. E.↗
NASA NTRS1987

Electrical and optical study of semiconductor laser diodes and materials

The characterization of a 2-D diode laser array from McDonald Douglas has been completed. The array consisted of 8 linear arrays of approximately 11 mm x 0.18 mm. Each array has between 7 and 8 diodes per mm. The threshold current is approximately 15 amps. The power output vs drive current (above threshold) of the array was measured. A peak power of 50 W was obtained at a drive current of 26 amps. Its far field pattern has a double lobe.

Albin, Sacharia↗
NASA NTRS1984

Lead salt diode lasers and development of tunable solid state lasers for remote sensing

Extensive studies of the output characteristics of single quantum well lead-telluride lasers developed at the General Motors Research Laboratories were carried out. Threshold currents, output powers and line structures were measured as a function of temperature. Very low-current lasing thresholds, record high operating temperatures and over 30% tuning ranges were achieved. Excellent reproducibilities, good far-field patterns and reasonable linewidths (approx. 500 kHz) were found.

Freed, C.↗
NASA NTRS1989

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

Kim, Jae-Hoon↗
NASA NTRS1988

Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers

Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.

Derry, P. L.↗
NASA NTRS1989

Evaluation of the feasibility of a far-infrared laser based on intersubband transitions in GaAs quantum wells

The threshold current and quantum efficiency are calculated for an FIR injection laser based on intersubband transitions in GaAs single quantum wells. By considering the balance of gain against the free carrier and transverse optical phonon absorption, and the intersubband transition time, the wavelength dependence of the threshold current is calculated. For the wavelength range 50-120 microns, the required threshold currents are the lowest and have reasonable values of 1-10 kA/sq cm. The threshold quantum efficiency in that range is expected to be about 0.0001.

Borenstain, Shmuel I.↗
NASA NTRS1981

High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

Botez, D.↗
DOE OSTI2025

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗
NASA NTRS1971

Ion-wave current instabilities and anomalous resistivity.

A theory of ion-wave current instabilities which takes into account, in a self-consistent manner, the inhomogeneities generated by field-aligned currents in a collisionless plasma is presented. Diamagnetic current associated with the current-produced density gradient is included in the distribution. The theory predicts that for a given frequency, the current threshold for ion-wave current instabilities is, in general, much below the threshold of ion acoustic instability in a uniform plasma as given by Fried and Gould. The current threshold is essentially zero in the limit when the ion Landau damping effect is negligible, or equivalently, the ion-wave current instabilities are absolute if there are no limitations on the wavelength. This is true even in the absence of externally applied density gradients in contrast to Kadomtsev's drift-wave results. For dimensions of interest in laboratory plasmas, the predicted linear growth rate increases with increasing longitudinal wavelength and with decreasing wavelength parallel to the diamagnetic current. Under the conditions of an experiment on anomalous resistivity (the dimensions but not the geometry of the machine have been considered), there is good agreement between the predicted onset of ion-wave current instabilities and the experimental data on the onset of anomalous resistivity.

Kan, J. R.↗
NASA NTRS2001

2D Quantum Transport Modeling in Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRS2004

Rapid Switching and Modulation by use of Coupled VCSELs

Devices incorporating coupled vertical-cavity surface-emitting lasers (VCSELs) have been proposed as means to effect unprecedentedly rapid modulation and/or switching of light beams in advanced optical communication and information-processing systems. A basic device according to the proposal would comprise two or more VCSELs (1) positioned so close to each other that they are coupled and (2) connected to a current source that biases them at a steady current above the threshold current for lasing. The operation of VCSELs under the conditions stated above has been simulated computationally with an algorithm that solves an approximation of the Maxwell-Bloch equations. (These are nonlinear coupled partial differential equations that model the relevant aspects of the physics of semiconductor lasers.) The results of the simulations show that the intensities of the beams oscillate, out of phase relative to each other, at a frequency that is typically of the order of tens of gigahertz. In particular, one simulation was performed for two coupled VCSELs, each having a circular aperture 5.6 microns in diameter, operating at a wavelength of 980 nm. The results of the simulation showed that the intensities of the two beams oscillated in opposite phase (see Figure 1) at a frequency of 42 GHz. In the far field, the beams were found to be separated by an angle of approx.=8deg. The intensities of the beams were also found to oscillate in the near field, 90deg out of phase with the oscillation in the far field. Figure 2 depicts a simple near-field switching device in which an assembly of microlenses would couple the two oscillating beams to two receivers.

Goorjian, Peter M.↗
NASA NTRS1978

Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes

Double-heterojunction A2(0.3)Ga(0.7)As/Al(0.08)Ga(0.92)As lasers (oxide-striped and Al2O3 facet coated) were subjected to step-temperature aging from 60 to 100 C. The change in threshold current and spontaneous output was monitored at 22 C. The average time required for a 20% pulsed threshold current increase ranges from about 500 h, when operating at 100 C, to about 5000 h at a 70 C ambience. At 22 C, the extrapolated time is about 1 million h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting activation energies are approximately 0.95 eV for laser degradation and approximately 1.1 eV for the spontaneous output decrease

Kressel, H.↗
NASA NTRS1988

High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrats, grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30 percent without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/sq cm when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high-quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.

Kim, Jae-Hoon↗
NASA NTRS1991

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Kim, Jae-Hoon↗
DOE OSTI2025

Beam breakup instability studies of powerful energy recovery linac for experiments

The maximum achievable beam current in an energy recovery linac (ERL) is often constrained by beam breakup (BBU) instability. Our previous research highlighted that filling patterns have a substantial impact on BBU instabilities in multipass ERLs. In this study, we extend our investigation to the eight-cavity model of the Powerful ERL for Experiment (PERLE). We evaluate its requirements for damping cavity higher order modes (HOMs) and propose optimal filling patterns and bunch timing strategies. Our findings reveal a significant new insight: while filling patterns are crucial, the timing of bunches also plays a critical role in mitigating HOM beam loading and BBU instability. This previously underestimated factor is essential for effective BBU control. We estimated the PERLE threshold current using both analytical and numerical models, incorporating the designed PERLE HOM dampers. During manufacturing, HOM frequencies are expected to vary slightly. Our study found no significant difference in BBU suppression for relative rms frequency jitters of 0.001, 0.002, and 0.005 for the same HOM. Introducing a jitter of 0.001 into our models, we found that the dampers effectively suppressed BBU instability, achieving a threshold current an order of magnitude higher than the design requirement. Our results offer new insights into ERL BBU beam dynamics and have important implications for the design of future ERLs. Published by the American Physical Society 2025

43 PARTICLE ACCELERATORS↗