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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Effect of (Al)GaAs/AlGaAs quantum confinement region parameters on the threshold current density of laser diodes

An approach has been proposed for choosing parameters (width and depth) of an (Al)GaAs/AlGaAs quantum confinement region via calculation of the threshold current density of a semiconductor laser. A detailed assessment of its components has made it possible to find criteria for optimising the range of quantum well widths so as to minimise the threshold current for lasers with different heterostructure geometries. The data presented in this paper demonstrate the feasibility of further improving output characteristics of semiconductor lasers by optimising the design and technology of quantum well heterostructures. Owing to this, we have simultaneously reduced the threshold current, carrier escape and internal optical loss, which has allowed us to obtain high (60 % to 70 %) efficiencies of a semiconductor laser operating in the spectral range 800 – 850 nm. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz

The active region of a THz (terahertz) quantum-cascade laser based on three tunnel-coupled GaAs/Al{sub 0.15}Ga{sub 0.85}As quantum wells with a resonance-phonon depopulation scheme is designed. Energy levels, matrix elements of dipole transitions, and gain spectra are calculated as functions of the applied electric-field strength F and temperature. It is shown that the maximum gain is implemented at a frequency of 3.37 THz and F = 12.3 kV/cm. Based on the proposed design, a quantum-cascade laser emitting at ~3.3 THz with a double metal waveguide and T{sub max} ~ 84 K is fabricated. The activation energy E{sub a} = 23 meV for longitudinal-optical (LO) phonon emission upon the stimulated recombination of hot electrons from the upper laser level to the lower one is determined from the Arrhenius temperature dependence of the output power.

36 MATERIALS SCIENCE↗

Resonance Suppression based on Predictive Control of Grid-following Inverters with LCL Filter in Weak Grid Condition

This paper presents an effective resonance suppression control when grid interactive inverter with LCL filter experience weak grid conditions. The resonance suppression mechanism is based on finite-set model predictive control (FSMPC) with adaptive cost function to alter the controller objectives seamlessly. The large parasitic impedance and low short circuit ratio (SCR) of weak grid challenges the operation of gridconnected inverters. Specifically, the LCL filter resonance may get excited, resulting in collapse of the inverter operation. To address this issue, an effective active damping approach is implemented in the proposed control. In the proposed active damping scheme for resonance suppression, the feedback currents are switched based on the operating conditions of inverter. During the stiff grid conditions, grid current serves as feedback to the controller. While in the weak grid conditions, the inverter current is selected as feedback signal. The toggling action between these two feedback currents is determined by comparing moving RMS of grid current with threshold current as constraint in the cost function of the proposed MPC scheme. The threshold current for toggling action is based on the reference active and reactive power setpoints plus an acceptable band of variation. The theoretical analysis is verified by several case studies.

Umar, Muhammad Farooq↗

Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers

The GaSb-based epitaxially regrown monolithic diode PCSELs operating near 2 μm at room temperature in continuous wave regime and generating 30 mW of output power from 200 μm diameter aperture have been designed and fabricated. Here, the devices demonstrated CW threshold current density of about 500 A/cm 2 . The laser output power was enhanced thanks to increased buried void area fill-factor in the photonic crystal layer with multiple voids per unit cell. The PCSEL generated ultra-low divergence donut shape beams at the currents near threshold. At higher injection currents, the device brightness was limited by excitation of the higher order lateral modes. Generation of the vector-vortex beams of different types by different band edge states of the buried photonic crystal was observed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

A Stabilizer based Predictive Control Scheme for Smart Inverters in Weak Grid

This paper presents a self-stabilization mechanism based on finite-set model predictive control (FCS-MPC) framework for smart inverters operating in weak grid conditions. As weak grid’s large parasitic impedance and low short-circuitratio (SCR) challenge the stable operation of grid-connected inverters. Specifically, the inverter may experience frequencies that might excite the LCL filter resonance phenomenon. The inverter stability collapses if this LCL resonance is triggered. To address this issue, a robust predictive controller is proposed that features a self-stabilization mechanism for smart inverters interacting with a weak grid. The proposed methodology utilizes the idea that in stiff grid conditions the grid current feedback (GCF) is stable and in weak grid conditions the inverter current feedback (ICF) is stable. Therefore, the proposed FCS-MPC toggles between GCF and ICF to achieve inherent LCL filter resonance damping. The toggling action between GCF and ICF is leveraged by comparing the moving RMS grid current with threshold current as a constrained in the proposed FCS-MPC cost function. The theoretical analyses are verified by several case studies for a single-phase grid-connected inverter. The analysis and results demonstrated that the proposed FCS-MPC operates well under weak, ultra-weak and stiff grid conditions.

Umar, Muhammad Farooq↗

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗

Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures

InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated that a certain level of carbon doping (10{sup 12} cm{sup –2} per a single quantum well) allows one to reduce the temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic temperature of threshold current and differential efficiency at temperatures from 16 to ~50°C. These changes are accompanied by an increase in threshold current density and a reduction in differential efficiency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High‐Efficiency Magnon‐Mediated Magnetization Switching in All‐Oxide Heterostructures with Perpendicular Magnetic Anisotropy

Abstract The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted extensive attention. One of the most promising approaches is the electrical manipulation of magnetization through electron‐mediated spin torque. However, the Joule heat generated via electron motion unavoidably causes substantial energy dissipation and potential damage to spintronic devices. Here, all‐oxide heterostructures of SrRuO 3 /NiO/SrIrO 3 are epitaxially grown on SrTiO 3 single‐crystal substrates following the order of the ferromagnetic transition metal oxide SrRuO 3 with perpendicular magnetic anisotropy, insulating and antiferromagnetic NiO, and metallic transition metal oxide SrIrO 3 with strong spin–orbit coupling. It is demonstrated that instead of the electron spin torques, the magnon torques present in the antiferromagnetic NiO layer can directly manipulate the perpendicular magnetization of the ferromagnetic layer. This magnon mechanism may significantly reduce the electron motion‐related energy dissipation from electron‐mediated spin currents. Interestingly, the threshold current density to generate a sufficient magnon current to manipulate the magnetization is one order of magnitude smaller than that in conventional metallic systems. These findings suggest a route for developing highly efficient all‐oxide spintronic devices operated by magnon current.

Zheng, Dongxing↗

Vertical Coupled Bunched-Beam Breakup Due to Resistive-Wall Wake

We estimate in this note the magnitude of the vertical rigid coupled-bunch mode of Courant and Sessler [1] at NSLS-II. If the proposed mini gap undulators (MGUs) are operated at the room temperature, the threshold current is calculated to be about 10 mA; this is to be compared to the designed beam current of 500 mA. If the MGUs are operated at 4.2 Kelvins, the threshold current is about 120 mA. In either case, a feedback damper is needed in order to operate NSLS-II at 500 mA.

43 PARTICLE ACCELERATORS↗

Vertical Coupled Bunched-Beam Breakup Due to Resistive-Wall Wake

We estimate in this note the magnitude of the vertical rigid coupled-bunch mode of Courant and Sessler at NSLS-II. If the proposed mini gap undulators (MGUs) are operated at the room temperature, the threshold current is calculated to be about 10 mA; this is to be compared to the designed beam current of 500 mA. If the MGUs are operated at 4.2° Kelvins, the threshold current is about 120 mA. In either case, a feedback damper is needed in order to operate NSLS-II at 500 mA.

36 MATERIALS SCIENCE↗

Low-threshold, single-transverse-mode, 940-nm vertical-cavity surface-emitting laser with a mode filter and half-wavelength cavity

We demonstrate a structure for a vertical-cavity surface-emitting laser (VCSEL) with a mode filter and half-wavelength (λ/2) cavity. The effects of λ/2- and λ-cavities on the threshold current are studied. The thickness and etched diameter of the mode filter are optimised to achieve single-transverse-mode output. The results show that when changing from λ-cavity to λ/2-cavity, the threshold current of the VCSEL decreases by 30.7% (from 0.85 mA to 0.65 mA). In addition, for the mode-filter thickness of 80 nm, and the etched diameter of 2.5 μm, the side mode suppression ratio reaches 90 dB, which meets the requirement of single-transverse-mode output. The VCSELs with the optimised design can overcome many difficulties and have great potential in 3D face recognition. (paper)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Linewidth narrowing in self-injection-locked on-chip lasers

Abstract Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated III–V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index, which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth, output power, and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities, the former emits at a higher optical power in the self-injection-locked state, while the latter is more energy-efficient. Lastly, a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser, minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser, increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

47 OTHER INSTRUMENTATION↗

Beam breakup instability studies of powerful energy recovery linac for experiments

The maximum achievable beam current in an energy recovery linac (ERL) is often constrained by beam breakup (BBU) instability. Our previous research highlighted that filling patterns have a substantial impact on BBU instabilities in multipass ERLs. In this study, we extend our investigation to the eight-cavity model of the Powerful ERL for Experiment (PERLE). We evaluate its requirements for damping cavity higher order modes (HOMs) and propose optimal filling patterns and bunch timing strategies. Our findings reveal a significant new insight: while filling patterns are crucial, the timing of bunches also plays a critical role in mitigating HOM beam loading and BBU instability. This previously underestimated factor is essential for effective BBU control. We estimated the PERLE threshold current using both analytical and numerical models, incorporating the designed PERLE HOM dampers. During manufacturing, HOM frequencies are expected to vary slightly. Our study found no significant difference in BBU suppression for relative rms frequency jitters of 0.001, 0.002, and 0.005 for the same HOM. Introducing a jitter of 0.001 into our models, we found that the dampers effectively suppressed BBU instability, achieving a threshold current an order of magnitude higher than the design requirement. Our results offer new insights into ERL BBU beam dynamics and have important implications for the design of future ERLs. Published by the American Physical Society 2025

43 PARTICLE ACCELERATORS↗

Transverse BBU Suppression with Feedback for Energy Recovery Linacs

In this study, we present beam dynamics simulations of the Strong Hadron Cooling (SHC) Energy Recovery Linac (ERL) that incorporate a feedback (FB) system designed to mitigate Beam Breakup (BBU) instabilities. The FB effectively suppresses BBU and increases the threshold current by roughly an order of magnitude. Our analysis revealed the aliasing behavior of the dominant higher-order mode (HOM) and its suppression by the FB, as evident from the power spectral density (PSD) of the beam centroid’s horizontal motion at the exit of the final linac section. Although the FB system— even when affected by noise—successfully reduced the BBU peak, it also amplified the PSD at other frequencies. These results provide important insights into BBU suppression and threshold current enhancement in ERLs.

Setiniyaz, S. [Thomas Jefferson National Accelerat↗

Low Tidal Current Speed Electricity Generation for Power at an Aquaculture Farm

Aquaculture farms are often located where tidal currents speeds are strong enough to ensure the currents supply fresh nutrients but not so strong that they harm the farm infrastructure. Traditional tidal turbines have cut-in speeds of 1 m/s and cannot generate electricity at current speeds below that threshold. Current energy converters that rely on vortex induced vibration (VIV) for movement can generate electricity at current speeds below 1 m/s. Here we discuss a project where researchers from the Pacific Northwest National Laboratory (PNNL) collaborate with researchers from the University of Michigan to investigate the feasibility of using a VIV current energy converter to generate electricity at an aquaculture farm. The VIV current energy converter uses flow induced oscillations of tandem cylinders and adaptive damping to harness the maximum horizontal marine hydrokinetic (MHK) energy by mimicking fish undulations. The current energy converter will be field tested and its power output measured over a range of current speeds. In addition to working with the University of Michigan, the PNNL researchers are collaborating with the Hog Island Oyster Company to assess their electricity usage and quantify the current energy resources at their Humboldt Bay facility. The electricity usage and current resource assessment at the aquaculture farm will be compared to the power produced by VIVACE to determine the feasibility of using VIVACE for power production at the farm.

Branch, Ruth A.↗

Balance-equation method for simulating terahertz quantum-cascade lasers using a wave-function basis with reduced dipole moments of tunnel-coupled states

A model based on a system of balance equations for localised and continuum states is developed to calculate the current − voltage (I − V) and power characteristics of quantum-cascade lasers (QCLs) operating in the terahertz (THz) range. A method for modifying the eigenbasis of the Schrödinger equation by reducing the dipole moments of tunnel-coupled states is proposed to take into account the effect of dephasing on the carrier transport. The calculated and experimental data on the current − voltage characteristics and the dependence of the integrated radiation intensity on current for the THz QCLs lasing at 2.3 THz are compared. The calculated and measured values of the threshold current, lasing current range, and maximum operating temperature T{sub max} are found to be in good agreement. It is shown that T{sub max} can be increased by 25 % by reducing the thickness of the top contact layer n{sup +}-GaAs of the laser structure under study from 800 to 100 nm. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics

A theory of static (threshold and power) characteristics of novel diode lasers – quantum dot (QD) lasers with asymmetric barrier layers (ABLs) – is developed. The barrier layers are asymmetric in that they have considerably different heights for the carriers of opposite signs. The ABL located on the electron- (hole-) injecting side of the structure provides a low barrier (ideally no barrier) for electrons (holes) [so that it does not prevent electrons (holes) from easily approaching the active region] and a high barrier for holes (electrons) [so that holes (electrons) injected from the opposite side of the structure do not overcome it]. The use of ABLs should thus ideally prevent the simultaneous presence of electrons and holes (and hence parasitic electron – hole recombination) outside the QDs. It is shown in this work that in such a case of total suppression of parasitic recombination, the QD lasers with ABLs offer close-to-ideal performance: the threshold current density is below 10 A cm{sup −2} at any temperature, the absolute value of the characteristic temperature is above 1000 K (which manifests a virtually temperature-independent operation), the internal differential quantum efficiency is practically unity, and the light – current characteristic is linear at any pump current. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗