Direct frequency measurements of transitions at 520 THz /576 nm/ in iodine and 260 THz /1.15 micron/ in neon
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Pollock, C. R.↗
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Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells
In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.
Liu, Ansheng↗
Terahertz (THz) Wireless Systems for Space Applications
NASA has been leading the Terahertz (THz) technology development for the sensors and instruments in astronomy in the past 20 years. THz technologies are expanding into much broader applications in recent years. Due to the vast available multiple gigahertz (GHz) broad bandwidths, THz radios offer the possibility for wireless transmission of high data rates. Multi-Gigabits per second (MGbps) broadband wireless access based on THz waves are closer to reality. The THz signal high atmosphere attenuation could significantly decrease the communication ranges and transmittable data rates for the ground systems. Contrary to the THz applications on the ground, the space applications in the atmosphere free environment do not suffer the atmosphere attenuation. The manufacturing technologies for the THz electronic components are advancing and maturing. There is great potential for the NASA future high data wireless applications in environments with difficult cabling and size/weight constraints. In this study, the THz wireless systems for potential space applications were investigated. The applicability of THz systems for space applications was analyzed. The link analysis indicates that MGbps data rates are achievable with compact sized high gain antennas.
Hwu, Shian U.↗
THz Spectroscopy of the Atmosphere
THz spectroscopy of the atmosphere has been driven by the need to make remote sensing measurements of OH. While the THz region can be used for sensitive detection on many atmospheric molecules, the THz region is the best region for measuring the diurnal behavior of stratospheric OH by remote sensing. The infrared region near 3 microns suffers from chemiluminescence and from spectral contamination due to water. The ultraviolet region near 300 nm requires solar illumination. The three techniques for OH emission measurements in the THz region include Fourier Transform interferometry, Fabry-Perot interferometry, and heterodyne radiometry. The first two use cryogenic direct detectors while the last technique uses a local oscillator and a mixer to down convert the THz signal to GHz frequencies. All techniques have been used to measure stratospheric OH from balloon platforms. OH results from the Fabry-Perot based FILOS instrument will be given. Heterodyne measurement of OH at 2.5 THz has been selected to be a component of the Microwave Limb Sounder on the Earth Observing System CHEM-1 polar satellite. The design of this instrument will be described. A balloon-based prototype heterodyne 2.5 THz radiometer had its first flight on, 24 May 1998. Results form this flight will be presented.
Pickett, Herbert M.↗
An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz
Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.
Siles, Jose V.↗
THz Limb Sounder (TLS) for Lower Thermospheric Wind, Oxygen Density, and Temperature
Neutral winds are one of the most critical measurements in the lower thermosphere and E region ionosphere (LTEI) for understanding complex electrodynamic processes and ion-neutral interactions. We are developing a high-sensitivity, low-power, noncryogenic 2.06 THz Schottky receiver to measure wind profiles at 100-140 km. The new technique, THz limb sounder (TLS), aims to measure LTEI winds by resolving the wind-induced Doppler shift of 2.06 THz atomic oxygen (OI) emissions. As a transition between fine structure levels in the ground electronic state, the OI emission is in local thermodynamic equilibrium(LTE) at altitudes up to 350km. This LTE property, together with day-and-night capability and small line-of-sight gradient, makes the OI limb sounding a very attractive technique for neutral wind observations. In addition to the wind measurement, TLS can also retrieve [OI] density and neutral temperature in the LTEI region. TLS leverages rapid advances in THz receiver technologies including subharmonically pumped (SHP)mixers and Schottky-diode-based power multipliers. Current SHP Schottky receivers have produced good sensitivity for THz frequencies at ambient environment temperatures (120-150 K), which are achievable through passively cooling in spaceflight. As an emerging technique, TLS can fill the critical data gaps in the LTEI neutral wind observations to enable detailed studies on the coupling and dynamo processes between charged and neutral molecules.
wind profiles↗
Micromachined TWTs for THz Radiation Sources
The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.
Booske, John H.↗
Laser Micromachining Fabrication of THz Components
Laser micromachining techniques can be used to fabricate high-quality waveguide structures and quasi-optical components to micrometer accuracies. Successful GHz designs can be directly scaled to THz frequencies. We expect this promising technology to allow the construction of the first fully integrated THz heterodyne imaging arrays. At the University of Arizona, construction of the first laser micromachining system designed for THz waveguide components fabrication has been completed. Once tested and characterized our system will be used to construct prototype THz lx4 focal plane mixer arrays, magic tees, AR coated silicon lenses, local oscillator source phase gratings, filters and more. Our system can micro-machine structures down to a few microns accuracy and up to 6 inches across in a short time. This paper discusses the design and performance of our micromachining system, and illustrates the type, range and performance of components this exciting new technology will make accessible to the THz community.
DrouetdAubigny, C.↗
All-Solid-State 2.45-to-2.78-THz Source
Sources in the THz range are required in order for NASA to implement heterodyne instruments in this frequency range. The source that has been demonstrated here will be used for an instrument on the SOFIA platform as well as for upcoming astrophysics missions. There are currently no electronic sources in the 2 3- THz frequency range. An electronically tunable compact source in this frequency range is needed for lab spectroscopy as well as for compact space-deployable heterodyne receivers. This solution for obtaining useful power levels in the 2 3- THz range is based on utilizing power-combined multiplier stages. Utilizing power combining, the input power can be distributed between different multiplier chips and then recombined after the frequency multiplication. A continuous wave (CW) coherent source covering 2.48 2.75 THz, with greater than 10 percent instantaneous and tuning bandwidth, and having l 14 W of output power at room temperature, has been demonstrated. This source is based on a 91.8 101.8-GHz synthesizer followed by a power amplifier and three cascaded frequency triplers. It demonstrates that purely electronic solid-state sources can generate a useful amount of power in a region of the electromagnetic spectrum where lasers (solid-state or gas) were previously the only available coherent sources. The bandwidth, agility, and operability of this THz source has enabled wideband, high-resolution spectroscopic measurements of water, methanol, and carbon monoxide with a resolution and signal-to-noise ratio unmatched by other existing systems, providing new insight in the physics of these molecules. Further - more, the power and optical beam quality are high enough to observe the Lamb-dip effect in water. The source frequency has an absolute accuracy better than 1 part in 1012, and the spectrometer achieves sub-Doppler frequency resolution better than 1 part in 108. The harmonic purity is better than 25 dB. This source can serve as a local oscillator for a variety of heterodyne systems, and can be used as a method for precision control of more powerful but much less frequency-agile quantum mechanical terahertz sources.
Mehdi, Imran↗
Development of 3-5 THz Harmonic Mixer
There is a high need for 2 THz room temperaturedirect-detectorsharmonic-mixers to characterize THz opticalsources, phase lock THz-QCLs as LO sources for multi-pixelreceivers, and realize absolute frequency calibration sources forapplications in astrophysics, earth science, and remote sensing.Thus, we have developed a WM-52 (WR0.22) harmonic mixerfor the 3-5 THz operation. The design, fabrication and assemblyof the THz mixer are discussed.
Microwave Devices↗
Near-Infrared Laser Pumped Intersubband THz Laser Gain in InGaAs-AlAsSb-InP Quantum Wells
We investigate the possibility of using InGaAs-AlAsSb-InP coupled quantum wells to generate THz radiation by means of intersubband optical pumping. We show that large conduction band offsets of these quantum wells make it possible to use conventional near-infrared diode lasers around 1.55 micron as pump sources. Taking into account the pump-probe coherent interaction and the optical nonlinearity for the pump field, we calculate the THz gain of the quantum well structure. We show that resonant Raman scattering enhances the THz gain at low and moderate optical pumping levels. When the pump intensity is strong, the THz gain is reduced by pump-induced population redistribution and pump-probe coherent interactions.
Liu, An-Sheng↗
Silicon Micromachined Microlens Array for THz Antennas
5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a smooth curvature. The measured height of the silicon microlens is about 280 microns. In this case, the original height of the photoresist was 210 microns. The change was due to the etching selectivity of 1.33 between photoresist and silicon. The measured surface roughness of the silicon microlens shows the peak-to-peak surface roughness of less than 0.5 microns, which is adequate in THz frequency. For example, the surface roughness should be less than 7 microns at 600 GHz range. The SEM (scanning electron microscope) image of the microlens confirms the smooth surface. The beam pattern at 550 GHz shows good directivity.
Lee, Choonsup↗
THz Local Oscillator Technology
The last decade has seen a number of technological advancements that have now made it possible to implement fully solid state local oscillator chains up to 2 THz. These chains are composed of cascaded planar multiplier stages that are pumped with W-band high power sources. The high power W-band sources are achieved by power combining MMIC amplifiers and can provide in access of 150 mW with about 10% bandwidth. Planar diode technology has also enabled novel circuit topologies that can take advantage of the high input power and demonstrate significant efficiencies well into the THz range. Cascaded chains to 1.9 THz have now been demonstrated with enough output power to successfully pump hot-electron bolometer mixers in this frequency range. An overview of the current State-of-the-Art of the local oscillator technology will be presented along with highlighting future trends and challenges.
multipliers↗
Design and Performance of a 2.7 THz Waveguide Tripler
The design and performance of a 0.9 THz to 2.7 THz waveguide tripler are presented. An unusual split block configuration with parallel input and output waveguides accommodates a monolithic membrane diode (MoMeD) circuit. Submicron planar GaAs Schottky diodes in single and antiparallel pairs are implemented with matching filters on a 3-micrometer thick suspended substrate as part of the MoMeD structure. The filters are a combination of short hammerheads and high-low impedance elements. Only a few circuit variations have been measured to date. The best current performance shows an output power of 0.1 microW and an efficiency of 0.002% at the band center frequency of 2.55 THz.
Maiwald, Frank↗
Observations in the 1.3 and 1.5 THz atmospheric windows with the Receiver Lab Telescope
The Receiver Lab Telescope (RLT) is a groundbased terahertz telescope; it is currently the only instrument producing astronomical data between 1 and 2 THz. The capabilities of the RLT have been expanding since observations began in late 2002. Initial observations were limited to the 850 GHz and 1.03 THz windows due to the availability of solid state local oscillators. In the last year we have begun observations with new local oscillators for the 1.3 and 1.5 THz atmospheric windows.
ground based observations↗
Dual-Polarization, Sideband-Separating, Balanced Receiver for 1.5 THz
A proposed heterodyne receiver would be capable of detecting electromagnetic radiation in both of two orthogonal linear polarizations, separating sidebands, and providing balanced outputs in a frequency band centered at 1.5 THz with a fractional bandwidth greater than 40 percent. Dual polarization, sideband-separating, and balanced-output receivers are well-known and have been used extensively at frequencies up to about 100 GHz; and there was an earlier proposal for such a receiver for frequencies up to 900 GHz. However, the present proposal represents the first realistic design concept for such a receiver capable of operating above 1 THz. The proposed receiver is intended to be a prototype of mass-producible receiver units, operating at frequencies up to 6 THz, that would be incorporated into highly sensitive heterodyne array instruments to be used in astronomical spectroscopic and imaging studies.
Chattopadhyay, Goutman↗
THz Instruments for Space Exploration
THz heterodyne spectrometers, capable of providing spectral resolution of >106 and detection sensitivity in the parts-per-billion range, provide a unique capability for space exploration. The exact operating frequency and technology for the instrument is driven largely by the science that is being investigated along with pragmatic concerns for mass and power requirements. These instruments are examples of highly complex systems that involve design, integration and testing of diverse technologies such as THz cryogenic detectors, optical elements, and microwave and submillimeter-wave components. This paper will review some of the advanced microwave and submillimeter-wave technologies that are being developed to create the next generation of THz instruments for space exploration.
Mehdi, Imran↗
4-Pixel Heterodyne Receiver at 1.9 THz using a CMOS Spectrometer
We present results from a 4x1-pixel 1.9 THz heterodyne array for the astrophysically important [CII] spectral line. A 4-pixel multiplier chain at 1.9 THz, with a compact spacing of 5 mm, is used as an LO. Receiver performance is verified by y-factor measurements with measured sensitivities of 900 K. Finally, using a coherent source near the target frequency of 1.9 THz, we down convert to baseband and measure spectra with both an IBOB and a new CMOS-based spectrometer. The CMOS spectrometer provides several advantages over more traditional spectrometers because of its compact size and low power consumption. This receiver prototype is easily scalable to other frequencies and larger focal plane arrays. Furthermore, because of its compact configuration, it can be easily packaged for orbital or sub-orbital missions.
Mehdi, Imran↗