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We designed and fabricated a fix-tuned balanced frequency tripler working in the 260-340 GHz band to be the first stage of a x3x3x3 multiplier chain to 2.7 THz. The design of a dual-chip version of this multiplier featuring an input splitter / output combiner as part of the input / output matching networks of both chips - with no degradation of the expected bandwidth and efficiency- will be presented.
A three laser system based on 852nm DBR lasers has been constructed and used to generate radiation in the 750 GHz to 1600 GHz frequency region. The system works by locking two of the three lasers to modes of an ultra low expansion Fabry-Perot cavity. The third laser is offset locked to one of the cavity locked lasers with conventional microwave techniques. The signal from the offset laser and the other cavity locked laser are injected into a Master Oscillator Power Amplifier (MOPA), amplified and focused on a low temperature grown GaAs photomixer, which radiates the difference frequency. The system has been calibrated with molecular lines to better than one part in 10(exp 7). In this paper we present the application of this system to the v(sub 2) in inversion band of Ammonia and the ground and v(sub 2) states of water. A discussion of the system design, the calibration and the new spectral measurements will be presented.
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Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range from 1.1 THz to 2.5 THz.
Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.
Tapered slot-line endfire antennas, of BLTSA type, have been fabricated on 1.7 micron thin SiO2/Si3N4 (epsilon (sub r) = 4.5) dielectric membranes. The antenna patterns, in the E-, H-, D- and D-cross planes, were measured at 270, 348, 370, and 802 GHz using bismuth micro bolometer detectors. The antennas have approximately 12 dB directivity, and the -10 dB beam widths are 50 and 55 degrees in the E- and H-planes at 348 GHz, respectively. The measurements at millimeter/submillimeter wavelengths compare well with scale measurements at 45 GHz as well as with theoretical predictions. The overall results are encouraging and show that slot-line antennas can be fabricated for use at THz frequencies. Furthermore, it is shown that the very thin SiO2/Si3N4 membranes are strong enough to be used in practical applications.
A tunerless 1.2 THz waveguide frequency tripler using Schottky planar varactor diodes has been designed, fabricated and tested.
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Planar GaAs Schottky diodes will be utilized for all of the LO chains on the HIPI instrument for the Herschel Space Observatory. A better understanding of device degradation mechanisms is desirable in order to specify environmental and operational conditions that do not reduce device life times. Failures and degradation associated with ESD (Electrostatic Discharge), high temperatures, DC currents and RF induced current and heating have been investigated. The goal is to establish a procedure to obtain the safe operating range for a given frequency multiplier.
The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory is comprised of five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The NASA developed components represent a significant advancement in the available performance. The current state of the art for each of these devices is presented along with a programmatic view of the development effort.
The Herschel Space Observatory (HSO), an ESA cornerstone mission with NASA contribution, will enable a comprehensive study of the galactic as well as the extra galactic universe. At the heart of this exploration are ultra sensitive coherent detectors that can allow for high-resolution spectroscopy. Successful operation of these receivers is predicated on providing a sufficiently powerful local oscillator (LO) source. Historically, a versatile space qualified LO source for frequencies beyond 500 GHz has been difficult if not impossible. This paper will focus on the effort under way to develop, build, characterize and qualify a LO chain to 1200 GHz (Band 5 on HSO) that is based on planar GaAs diodes mounted in waveguide circuits. State-of-the-art performance has been obtained from a three-stage ( x2 x 2 x 3 ) multiplier chain that can provide a peak output power of 120 uW (1178 GHz) at room temperature and a peak output power of 190 uW at 1183 GHz when cooled to 113 K. Implementation of this LO source for the Heterodyne Instrument for Far Infrared (HIFI) on HSO will be discussed in detail.
Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.
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A carbon nanotube-based high current density electron field emission source is under development at Jet Propulsion Laboratory (JPL) for submillimeter-wave power generation.
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