Terahertz technology and applications
THz applications and instrument technology drivers are briefly reviewed.
THz submillimeter technology↗
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Local oscillator chain for 1.55 to 1.75 THz with 100-(mu)W peak power
We report on the design and performance of a fix-tuned x2x 3x 3 frequency multiplier chain that covers 1.55-1.75 THz. The chain is nominally pumped with 100 mW at W-band. At 120 K the measured output power is larger than 4 (mu)W across the band with a peak power of 100 (mu) W at 1.665 THz. A similar chain operated at room temperature produced a peak power of 21 (mu)W. These power levels now make it possible to deploy multipixel heterodyne imaging arrays in this frequency range.
frequency multiplier↗
THz Instruments for Space Exploration
THz heterodyne spectrometers, capable of providing spectral resolution of >106 and detection sensitivity in the parts-per-billion range, provide a unique capability for space exploration. The exact operating frequency and technology for the instrument is driven largely by the science that is being investigated along with pragmatic concerns for mass and power requirements. These instruments are examples of highly complex systems that involve design, integration and testing of diverse technologies such as THz cryogenic detectors, optical elements, and microwave and submillimeter-wave components. This paper will review some of the advanced microwave and submillimeter-wave technologies that are being developed to create the next generation of THz instruments for space exploration.
Mehdi, Imran↗
A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips
Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.
Bruston, J.↗
Applications of submillimeter wave technology for SDI
This paper examines the potential use of using submillimeter wave technology (actually 3 mm to 100 microns, or frequencies between 100 GHz and 3 THz) for SDI applications, especially for endo-KEW systems. The requirements and functions for a multipurpose weapon sensor are considered. The emphasis is on active sensors, but certain elements of passive sensors are mentioned that could play an important role. The rest of the paper provides information on the state-of-the-art in submillimeter wave technology, especially current component activity, and future plans.
Kile, J. N.↗
THz Electronics
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submillimeter wave technology mixer↗
Sensor Technology at Submillimeter Wavelengths for Space Applications
Our universe is most luminous at far-infrared and submillimeter wavelengths (100 GHz - 10 THz) after the Cosmic Microwave Background (CMB) radiation. This region of the electromagnetic spectrum provides critical tracers for the study of a wide range of astrophysical and planetary phenomena. This spectral range contains information on the origin of the planets, stars, galaxies, and clusters; the geometry and matter/energy content of the Universe, atmospheric constituents and dynamics of the planets and comets and tracers for global monitoring and the ultimate health of the Earth. Sensors at far-infrared and submillimeter wavelengths provide unprecedented sensitivity for astrophysical, planetary, and earth observing instruments. Very often, for a spaced based platform where the instruments are not limited by atmospheric losses and absorption, the overall instrument sensitivity is dictated by the sensitivity of the sensors themselves. Moreover, some of the cryogenic sensors at submillimeter wavelengths provide almost quantum-limited sensitivity. This paper provides an overview of the submillimeter-wave sensors and their performance and capabilities for space applications.
terahertz↗
Submillimeter wave detection with superconducting tunnel diodes
Superconductor-Insulator-Superconductor (SIS) diodes are the detector elements in the most sensitive heterodyne receivers available from 100 to 500 GHz. SIS mixers are the front end of radio astronomical systems around the world. SIS mixer technology is being extended to 1 THz and higher frequencies for eventual use on spaceborne astronomical experiments. Here is a short review of submillimeter SIS mixers. The role of impedance matching in the proper design of an SIS mixer is described. A variety of methods for achieving good impedance match at submillimeter frequencies are presented. The experimental state of the submillimeter SIS mixer art is described and summarized.
Wengler, Michael J.↗
Micromachined TWTs for THz Radiation Sources
The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.
Booske, John H.↗
Terahertz Schottky Multiplier Sources
This viewgraph presentation reviews the multiplier source technologies and the status/Performance of THz multiplier sources. An example of a THz application is imaging radar. The presentation reviews areas of requirements for THz sources: (1) Figures of merit, (i.e., Frequency Terahertz for high resolution Bandwidth of at least 15 GHz for high range resolution Efficiency (i.e., minimize power supply requirements) (2) Output power: (i.e., Milliwatts below 800 GHz, 10s of microwatts above 1 THz, 1-2 microwatts near 2 THz (3) Mechanical--stability, compact, low mass (4) Environmental -- radiation, vibration, thermal. Several sources for 0.3 - 2 THz are reviewed: FIR lasers, quantum cascade lasers (QCL), backward-wave oscillator (BWO), and Multiplier sources. The current state of the art (SoA) is shown as Substrateless Technology. It also shows where the SoA is for devices beyond 1 THz. The presentation concludes by reviewing the options for future development, and 2 technology roadmaps
submillimeter wave↗
International Symposium on Space Terahertz Technology, 1st, University of Michigan, Ann Arbor, Mar. 5, 6, 1990, Proceedings
Problems, proposed solutions, and recent results related to the development of solid-state oscillators, detectors, mixers, diode multipliers, and antennas at THz frequencies are addressed. Individual topics considered include: submillimeter heterodyne remote sensing of upper atmospheric gases, planar dipole array antenna with an elliptical lens, twin slot antenna structures integrated with microbolometer detectors for 94-GHz imaging. Also discussed are: quantum-well and quantum-barrier diodes for generating submillimeter wave power, planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths, GaAs Schottky barrier varactor diodes for submillimeter wavelength power generation, planar doped barrier devices for subharmonic mixers.
Ulaby, Fawwaz↗
Recent progress in submillimeter heterodyne receiver development
The progress made in relation to the development of sensitive submillimeter heterodyne receiver systems is reviewed. Sensitive superconductor-insulator-superconductor (SIS) tunnel junction mixers were demonstrated at frequencies of greater than 1 THz, with noise temperatures of below 1000 K. An alternative mixer technology is that of the superconducting hot electron bolometer, for which sensitivities of 1.2 THz and 2.5 THz were demonstrated. Local oscillator technology is under development. Gunn oscillators followed by Schottky varactor frequency multipliers have sufficient output power to drive SIS mixers at 1 THz. It is considered that optical photomixer local oscillators have potential for driving hot electron bolometers above 1 THz.
Zmuidzinas, J.↗
THz Imaging Radar: Technology Development for Multi-Pixel Multi-Color Architectures
No abstract available
imaging arrays↗
THz Spectroscopy and Spectroscopic Database for Astrophysics
Molecule specific astronomical observations rely on precisely determined laboratory molecular data for interpretation. The Herschel Heterodyne Instrument for Far Infrared, a suite of SOFIA instruments, and ALMA are each well placed to expose the limitations of available molecular physics data and spectral line catalogs. Herschel and SOFIA will observe in high spectral resolution over the entire far infrared range. Accurate data to previously unimagined frequencies including infrared ro-vibrational and ro-torsional bands will be required for interpretation of the observations. Planned ALMA observations with a very small beam will reveal weaker emission features requiring accurate knowledge of higher quantum numbers and additional vibrational states. Historically, laboratory spectroscopy has been at the front of submillimeter technology development, but now astronomical receivers have an enormous capability advantage. Additionally, rotational spectroscopy is a relatively mature field attracting little interest from students and funding agencies. Molecular database maintenance is tedious and difficult to justify as research. This severely limits funding opportunities even though data bases require the same level of expertise as research. We report the application of some relatively new receiver technology into a simple solid state THz spectrometer that has the performance required to collect the laboratory data required by astronomical observations. Further detail on the lack of preparation for upcoming missions by the JPL spectral line catalog is given.
THz spectrometer↗
THz Spectroscopy and Spectroscopic Database for Astrophysics
Molecule specific astronomical observations rely on precisely determined laboratory molecular data for interpretation. The Herschel Heterodyne Instrument for Far Infrared, a suite of SOFIA instruments, and ALMA are each well placed to expose the limitations of available molecular physics data and spectral line catalogs. Herschel and SOFIA will observe in high spectral resolution over the entire far infrared range. Accurate data to previously unimagined frequencies including infrared ro-vibrational and ro-torsional bands will be required for interpretation of the observations. Planned ALMA observations with a very small beam will reveal weaker emission features requiring accurate knowledge of higher quantum numbers and additional vibrational states. Historically, laboratory spectroscopy has been at the front of submillimeter technology development, but now astronomical receivers have an enormous capability advantage. Additionally, rotational spectroscopy is a relatively mature field attracting little interest from students and funding agencies. Molecular data base maintenance is tedious and difficult to justify as research. This severely limits funding opportunities even though data bases require the same level of expertise as research. We report the application of some relatively new receiver technology into a simple solid state THz spectrometer that has the performance required to collect the laboratory data required by astronomical observations. Further detail on the lack of preparation for upcoming missions by the JPL spectral line catalog is given.
Pearson, John C.↗
A 2.5-2.7 THz Room Temperature Electronic Source
We report on a room temperature 2.5 to 2.7 THz electronic source based on frequency multipliers. The source utilizes a cascade of three frequency multipliers with W-band power amplifiers driving the first stage multiplier. Multiple-chip multipliers are utilized for the two initial stages to improve the power handling capability and a sub-micron anode is utilized for the final stage tripler. Room temperature measurements indicate that the source can put out a peak power of about 14 microwatts with more than 4 microwatts in the 2.5 to 2.7 THz range.
Varactor diodes↗
Low-loss monolithic transmission lines for submillimeter and terahertz frequency applications
The design and construction of low-loss monolithic transmission lines are critical to systems which require that terahertz-power be guided to the antenna front ends. Two types of novel monolithic guiding structures, designed for the 0.3-2.0 THz and 0.1-0.3 THz ranges, respectively, are proposed. The novel waveguides are constructed from dielectric materials and structures which are available in monolithic technology so that the integration of active devices is possible. Propagation in each of the waveguides is characterized over relevant frequency ranges by applying a mode-matching technique, which takes into account all forms of electromagnetic coupling as well as losses in the dielectrics. The structures are predicted to exhibit excellent power confinement and low losses.
Engel, Andrew G., Jr.↗
Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies
Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.
Silicon micromachining↗