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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.

42 ENGINEERING↗
DOE OSTI2026

TCAD-Machine Learning Enabled TID Compact Model Development for Commercial SiC MOSFET

We propose a TCAD (Technology Computer Aided Design)-machine learning coupled approach that combines a TCAD tool (Charon), optimization/uncertainty quantification tool (Dakota), surrogate models, and Bayesian learning capabilities. The coupling approach is used for accurate modeling and calibration of total ionizing dose (TID) induced threshold voltage (V th ) shifts in Commercial-Off-The-Shelf (COTS) semiconductor devices and to develop physics-informed TID compact models. This versatile approach is applied to model the TID effect in an exemplar COTS 3.3 kV SiC power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). With the Charon-Dakota coupling, we can determine key device geometry and doping values based on device physics, which are difficult to obtain or not available for COTS devices but important for TCAD simulation; additionally, we can efficiently generate thousands of simulation results in a large parameter space, which makes it possible to develop data-driven surrogate models and perform Bayesian calibration. Utilizing the full tool-coupling approach, we achieve calibrated TCAD simulation models that accurately capture the average TID-induced V th shifts behavior with total doses and V th shifts saturation at high doses as observed in experimental data. More importantly, the calibrated TCAD simulations are obtained with determined TID model parameters (e.g., hole trap density and capture cross section) values that contain well quantified uncertainties. Furthermore, we can isolate and quantify the noises that are not captured by the TCAD models but exist in the measured data due to measurements and devices variabilities. Lastly, the calibrated surrogate models are used to develop physics-informed TID compact models. The method is generalizable to other devices and/or radiation conditions with few modifications and can provide well-determined uncertainties.

COTS↗
DOE OSTI2025

Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

Here, this article presents a comparative analysis of total ionizing dose (TID) response in GlobalFoundries’ (GF) 12 low-power (LP) and 12LP+12-nm bulk fin field effect transistor (FinFET) technologies using 10-keV X-rays. Our findings show that 12LP+ n-type transistors demonstrate higher sensitivity to TID degradation of the off-state leakage drain current compared to 12LP. Data indicate that for both 12LP and 12LP+, transistors with higher threshold voltages (VTs) exhibit lower off-state drain-source leakage postirradiation compared to transistors with lower VTs. Data consistently show that transistors with fewer fins per transistor show superior TID tolerance, in both 12LP and 12LP+ technologies. Lower VT transistors in both technologies display similar preirradiation leakage currents. On the other hand, higher VT transistors in 12LP+ show lower preirradiation leakage currents than those in 12LP, highlighting that the front-end-of-line of 12LP+ technology has been modified compared to 12LP. p-type devices in 12LP+ presented negligible degradation. Larger TID sensitivity in 12LP+ might be attributed to the implementation of dual-metal gate work functions, reduced halo doping, deeper source/drain (S/D) doping profiles, and/or 12LP+ having narrower fins compared to 12LP.

Dual-metal gate work functions↗
DOE OSTI2025

Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams

Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.

MOSFET↗
DOE OSTI2018

Tamper Indicating Device: Initial Training, Course 50112

Tamper Indicating Device (TID): Initial Training, course #50112, covers Los Alamos National Laboratory (LANL) Material Control & Accountability (MC&A) TID Program procedures for the application and removal of TIDs. LANL’s policy is to comply with Department of Energy (DOE) requirements for the use of TIDs consistent with the graded safeguards described in DOE Manual DOE O 474.2, Nuclear Material Control and Accountability. When you have completed this course, you will: recognize standard practices and procedures of the LANL TID Program; have hands-on experience in the application and removal of LANL TIDs, and; verify the application and removal of LANL TIDs.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2019

How variable are the volumetric measurements from gated perfusion SPECT when a one-day stress-rest protocol is used?

Background: Using myocardial perfusion scintigraphy (MPS), an increase in left ventricular (LV) volumes or a decrease in ejection fraction (EF) from rest to stress may be clinically important. The variation in these measures between the low-dose stress acquisition and high-dose rest acquisition in a one-day stress-rest protocol has not been established. We assessed the reproducibility of gated volumetric indices between stress and rest and the normal variation in ungated TID ratio for a one-day stress-rest {sup 99m}Tc-tetrofosmin protocol. Methods: Two thousand and one hundred and fifty eight (2158) {sup 99m}Tc-tetrofosmin MPS patient studies were analyzed retrospectively. Studies were excluded for incomplete data, significant technical difficulties, or (for gated analysis but not for analysis of TID ratio) if the LV EF was > 75%. An analysis of gated data was undertaken to establish the reproducibility of ventricular volumes and EF between stress and rest scans. Ungated volume data were analyzed to determine the confidence limits of TID ratio according to ventricular volume. Results: Gated data were analyzed for 621 patients without inducible hypoperfusion. Mean EF at rest was slightly higher than after stress (62.4% ± 10.3% vs 61.2% ± 10.4%, P < 0.001), and the standard deviation of the difference was 5.2% (95% CI 4.9% to 5.5%). Ungated volumes were available for 992 non-ischaemic patients. The upper 95% CI for TID ratio was 1.23. This increased from 1.20 to 1.37 between the highest and lowest deciles of rest ungated volume. Conclusion: Using a one-day stress-rest {sup 99m}Tc-tetrofosmin protocol, a fall in LV EF between rest and stress of > 11.6% or a TID ratio of > 1.23 is likely to be clinically reliable. The upper limit of normal for TID ratio needs to be increased for patients with small LV chamber volumes.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2025

Time-interval distributions in a digital gamma multi-channel analyzer at extreme input rates

Here, this study explores the relationship between experimentally observed inter-event time-interval distributions (TIDs) and measured dead times for pulses generated by a HPGe gamma detector and processed by a digital spectrometer. The system utilizes a fast and slow channel, pile-up rejector, trapezoid filtering, and flash analog-to-digital converter. The experimentally derived TIDs were compared with theory for validation. The results demonstrate that the theoretical model reliably describes measured TIDs up to 40% dead time. However, significant distortion effects become increasingly pronounced at higher input rates. It appears that the deviation between the measured and calculated time-interval distributions take the shape of higher-order convolutions of the TID, which represent the time difference between counts for more than two successive events. In this work, theoretical functions for the TID are expanded to reproduce measurements up to 90%. This refinement in the interpretation and treatment of the measured TIDs provides improved accuracy and precision in the prediction of the true event rate and measured dead time in the counter. Even though it reflects occasional count loss that is specific to the set-up, it is expected that a similar adjustment may be applicable to other detection systems as well.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗