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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Rooting binder-free tin nanoarrays into copper substrate via tin-copper alloying for robust energy storage

The need for high-energy batteries has driven the development of binder-free electrode architectures. However, the weak bonding between the electrode particles and the current collector cannot withstand the severe volume change of active materials upon battery cycling, which largely limit the large-scale application of such electrodes. Using tin nanoarrays electrochemically deposited on copper substrate as an example, here we demonstrate a strategy of strengthening the connection between electrode and current collector by thermally alloying tin and copper at their interface. The locally formed tin-copper alloys are electron-conductive and meanwhile electrochemically inactive, working as an ideal "glue" robustly bridging tin and copper to survive harsh cycling conditions in sodium ion batteries. The working mechanism of the alloy "glue" is further characterized through a combination of electrochemical impedance spectroscopy, atomic structural analysis and in situ X-ray diffraction, presenting itself as a promising strategy for engineering binder-free electrode with endurable performance. The authors here report a binder-free electrode based on tin nanoarrays deposited on copper substrate. It is found that the locally formed electrochemically inactive tin-copper alloys work as a glue that bridges tin and copper to survive harsh cycling conditions in sodium ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2020

Surface-Activated Corrosion in Tin–Lead Halide Perovskite Solar Cells

Mixed tin–lead halide perovskite solar cells have promising power conversion efficiencies, but long-term stability is still a challenge. Here, we examine the stability of a 60:40 tin–lead perovskite to better understand diminished device performance upon thermal treatment, both in ambient and inert atmosphere. Operando X-ray diffraction shows a stable bulk structure of the perovskite absorber, leading to the hypothesis that surface chemistry dominates the degradation mechanism. X-ray photoelectron spectroscopy reveals two new observations post-thermal annealing that accompany previously reported Sn 4+ evolution: (i) the formation of I 3 – intermediates preceding I 2 loss at the surface and (ii) evidence of under-coordinated tin and lead surface sites (Sn δ<2+ and Pb δ<2+ , respectively) in inert and ambient conditions. These two species indicate an activated corrosion (i.e., both oxidation and reduction) process at the surface as a possible chemical pathway for degradation, which is expected to be accelerated under operando voltage and light biases.

14 SOLAR ENERGY↗
NASA NTRS1975

Friction and wear of tin and tin alloys from minus 100 C to 150 C

Sliding friction experiments were conducted with an iron (110) single-crystal pin sliding on single and polycrystalline tin and tin alloys. Specimens were examined at various ambient temperatures from -100 to 150 C. Applied loads varied from 1 to 50 grams, and sliding velocity was constant at 0.7 mm/min. Results indicate that the crystal transformation of tin influences the friction coefficient. Friction was higher for the diamond structure (gray tin) than it was for the body-centered tetragonal structure (white tin). Bismuth arrested the crystal transformation, which resulted in constant friction over the temperature range -100 to 150 C. Both copper and aluminum enhanced the kinetics of transformation, with aluminum producing a nearly twofold change in friction with the crystal transformation.

Buckley, D. H.↗
DOE OSTI2023

Modeling the Effect of Surface Platinum–Tin Alloys on Propane Dehydrogenation on Platinum–Tin Catalysts

Uncertainty analysis, reported experimental literature data, and density functional theory were synthesized to model the effect of surface tin coverage on platinum-based catalysts for nonoxidative propane dehydrogenation to propylene. Here, this study tests four different platinum–tin skin surface models as potential catalytic sites, Pt 3 Sn/Pt(100), PtSn/Pt(100), Pt 3 Sn/Pt(111), and Pt 2 Sn/Pt(211), and compares them to the corresponding pure Pt surface sites using an uncertainty analysis methodology that uses BEEF-vdW with its ensembles (BMwE) to generate the uncertainty for the energies of the intermediates and transition states. One experimental data set with two experimental observations, selectivity to propylene and turnover frequency of propylene, was used as a calibration data set to evaluate the impact of the experimental data on informing the models. This study finds that the prior model for Pt 3 Sn/Pt(100) is the most active and Pt 2 Sn/Pt(211) is the most selective toward propylene. Active sites on the (100) facet have the highest probability of being responsible for C 1 and C 2 product formations (C–C bond cleavage). Increasing the Sn coverage on the (100) surface facet to a PtSn/Pt(100) active site leads to a significantly reduced rate and might explain the experimentally observed higher selectivity of Sn-doped catalysts relative to pure Pt catalysts. Next, this study finds that for all surfaces, except PtSn/Pt(100), the rate-controlling steps are the initial dehydrogenation steps alongside some partially rate-controlling second dehydrogenation steps. For PtSn/Pt(100), only the initial terminal dehydrogenation step to CH 3 CH 2 CH 2 * and second dehydrogenation steps are rate-controlling. Next, the calibrated models for all surfaces were found to be selective toward propylene production and model the reported turnover frequency successfully. Nevertheless, Pt 2 Sn/Pt(211) emerges as the active site with some (minor) evidence as the main active site based on Jeffreys’ scale interpretation of Bayes factors. This observation agrees with prior studies that also found step sites to be most likely the most relevant active sites for pure Pt catalysts. Overall, the results indicate that tin, in addition to affecting the binding strength of the adsorbed species, prevents deeper dehydrogenation (reducing coking) and cracking reactions through increasing activation barriers for unwanted side reactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Evaluating MetGlasTM Solderability with Tin-Silver-Copper and Tin-Silver-Bismuth Solder Alloys

The solderability of MetGlas TM (subsidiary of Hitachi Metals, America Ltd) 2826 MB, a rapidly solidified metallic foil, was evaluated by the meniscus height/wetting force method for tin-silver-copper (SnAgCu) and tin-silver-bismuth (SnAgBi) solders to understand the effects of the extreme non-equilibrium condition of the MetglasTM surface on solderability performance. Of the variables studied here (solder temperature, heat treatment, and solder composition), solder composition had the largest impact on contact angle. Flux and foil composition remained constant throughout; but, these factors would also be predicted to significantly affect solderability. A greater understanding of the manner whereby non-equilibrium cooling affects solderability of these foils will broaden the application of soldering technology of structures fabricated by rapid cooling process (i.e. additively manufactured coatings and parts). Developing a robust database for Pb-free solderability behavior is also necessary, as industry transitions from tin-lead (SnPb) to lead free (Pb-free) solders.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Contact resistivities of sputtered TiN and Ti-TiN metallizations on solar-cell-type-silicon

The resistivities of TiN and Ti-TiN contacts on a shallow junction solar-cell-type silicon substrate have been determined by the method of the transmission line model. The contacts investigated are shown to be suitable for standard solar cells from an electrical point of view. Contact resistivity values of the order of 0.0001 ohm/sq cm as obtained for the n(+)Si-TiSi2-TiN contact system may be acceptable for concentrations up to 100 times, but lower values are necessary beyond this point.

Maenpaa, M.↗
DOE OSTI2022

High Carrier Lifetimes in Epitaxial Germanium-Tin/Al(In)As Heterostructures with Variable Tin Compositions

Group IV-based germanium-tin (Ge1-ySny) compositional materials have recently shown great promise for infrared detection, light emission and ultra-low power transistors. High carrier lifetimes are desirable for enhancing the detection limit and efficiency of photodetectors, low threshold current density in lasers, and low tunneling barrier height by lowering defects and dislocations at the heterointerface of a source and a channel. Here, carrier lifetimes in epitaxial germanium (Ge) and variable tin (Sn) compositional Ge1-ySny materials were experimentally determined on GaAs substrates using the contactless microwave photoconductive decay (u-PCD) technique at an excitation wavelength of 1500 nm. Sharp (2 x 2) reflection high energy electron diffraction patterns and low surface roughness were observed from the surface of the Ge0.97Sn0.03 epilayer. X-ray rocking curves from Ge0.97Sn0.03 and Ge0.94Sn0.06 layers demonstrated the pseudomorphic and lattice-matched growth on AlAs and In0.12Al0.88As buffers, respectively, further substantiated by reciprocal space maps and abrupt heterointerfaces evident from the presence of Pendellosung oscillations. High effective carrier lifetimes of 150 ns to 450 ns were measured for Ge1-ySny epilayers as a function of Sn composition, surface roughness, growth temperature, and layer thickness. The observed increase in the carrier lifetime with an increasing Ge layer thickness and a reducing surface roughness, by incorporating Sn, were explained. The enhancement of the carrier lifetime with an increasing Sn concentration was achieved by controlling the defects with lattice-matched Ge0.94Sn0.06/In0.12Al0.88As heterointerfaces or the pseudomorphic growth of Ge0.94Sn0.06 on GaAs. Therefore, our monolithic integration of variable Sn alloy compositional Ge1-ySny materials with high carrier lifetimes opens avenues to realize electronic and optoelectronic devices.

carrier lifetimes↗
DOE OSTI2022

Carbazole-Based Hole Transport Polymer for Methylammonium-Free Tin-Lead Perovskite Solar Cells with Enhanced Efficiency and Stability

As the most commonly used hole transport material (HTM) in tin-lead (Sn-Pb) perovskite solar cells (PSCs), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) limits the power conversion efficiency (PCE) and stability of the PSCs due to its acidic characteristics. Herein, an easily synthesized polymer HTM poly[(phenyl)imino[9-(2-ethylhexyl)carbazole]-2,7-diyl] (CzAn) with a shallow highest occupied molecular orbital (HOMO) level of -4.95 eV is used in a p-i-n structure, methylammonium-free, Sn-Pb PSC to replace PEDOT:PSS. Upon optimization using doping and surface engineering, high quality Sn-Pb PSCs could be successfully fabricated, boosting the PCE to 22.6% (stabilized PCE of 21.3%) compared with 21.2% for PEDOT:PSS. The perovskite films prepared on the modified CzAn HTM possess improved crystallinity, reduced trap-state density, and larger carrier mobility resulting in PSCs with greatly improved stability.

carrier mobility↗
DOE OSTI2022

Free Energy Dependencies for Interfacial Electron Transfer from Tin-Doped Indium Oxide (ITO) to Molecular Photoredox Catalysts

John B. Goodenough proposed that interfacial electron transfer kinetics from main group metal oxides should be fundamentally different from that of transition metal oxides, an expectation that has not been widely tested. Herein, the kinetics for interfacial electron transfer from mesoporous transparent conductive oxide Tin-doped Indium Oxide (ITO) to four photoredox catalysts (PCs) were characterized in acetonitrile electrolytes. The photocatalysts had the form: [Ru(4,4ʹ-R 2 -2,2′-bipyridine) 2 (4,4ʹ-(PO 3 H 2 ) 2 -2,2′-bipyridine)] 2+ , where R was H, methoxy, tert -butyl, and Br. The impact of the surface binding group was characterized with [Ru(2,2′-bipyridine) 2 (4,4ʹ-(CO 2 H) 2 -bpy)] 2+ . The interfacial electron transfer reaction ITO(e − )∣PC + → ITO∣PC was quantified by nanosecond absorption spectroscopy as a function of the applied potential (and hence ‒Δ G °). Specific conditions of applied potential were identified where the kinetics were sensitive to the incident irradiance. A layer-by-layer method was used to insert ionic methylene bridge(s) between the PC and the oxide surface. Marcus-Gerischer analysis of the kinetic data indicates non-adiabatic interfacial electron transfer with total reorganization energies that increase when bridges were placed between the photocatalyst and the ITO surface.

Bangle, Rachel E.↗
NASA NTRS1982

Low gravity solidification structures in the tin-15 wt pct lead and tin-3 wt pct bismuth alloys

The tin-15 wt pct lead and tin-3 wt pct bismuth alloys have been solidified in the low-gravity environment provided by the Space Processing Applications Rocket (SPAR), on the KC-135 airplane, and at high 'g' levels in a centrifuge furnace. In each case the resultant cast structure was significantly different from that obtained in ground based experiments. Earlier low-gravity studies with the metal-model system NH4Cl-H2O presaged these results. This paper presents and discusses the influence of changes in the gravity force on the grain structure of these materials.

Johnston, M. H.↗
DOE OSTI2022

Tin sensitization and silver activation on indium tin oxide surfaces

Adhesion of electrical contacts on electronic and optoelectronic devices is important for reliable device operation. Sn-sensitization is a widely used process that improves uniformity and adhesion of plated metals to glass and polymer surfaces. Electrically conductive substrates can significantly benefit from improved uniformity, adhesion, and contact resistance to metallic contact layers. In this study, we investigate the process of Sn-sensitization and Ag-activation on indium tin oxide (ITO) surfaces—a dominant transparent conducting oxide used in optoelectronic devices. Here, our results show that ITO films exposed to Sn-sensitization solutions with HCl concentrations below 10 mM effectively modify the surface termination through the process of Sn-sensitization (Sn-bonding at the surface hydroxide sites) without etching the ITO film. However, the subsequent Ag-activation on an ITO surface does not seem to follow the typical response on a glass substrate, suggesting that Ag-activation of an ITO surface is likely limited by the Ag ion size relative to the area density of surface hydroxide sensitization sites.

42 ENGINEERING↗
NASA NTRS2016

Design, Fabrication, and Testing of a TiN Ti TiN Trilayer KID Array for 3mm CMB Observations

Kinetic inductance detectors (KIDs) are a promising technology for astronomical observations over a wide range of wavelengths in the mm and sub-mm regime. Simple fabrication, in as little as one lithographic layer, and passive frequency-domain multiplexing, with readout of up to 1000 pixels on a single line with a single cold amplifier, make KIDs an attractive solution for high-pixel-count detector arrays. We are developing an array that optimizes KIDs for optical frequencies near 100GHz to expand their usefulness in mm-wave applications, with a particular focus on CMBB-mode measurement efforts in association with the QUBIC telescope. We have designed, fabricated, and tested a 20-pixel prototype array using a simple quasi lumped microstrip design and pulsed DC reactive magnetron-sputtered TiNTiTiN trilayer resonators, optimized for detecting 100GHz (3mm) signals. Here we present a discussion of design considerations for the array, as well as preliminary detector characterization measurements and results from a study of TiN trilayer properties.

passive frequency-domain multiplexing↗
DOE OSTI2025

(NH 3 (CH 2 ) 7 NH 3 ) 2 Sn 3 I 10 , a Vacancy-Ordered Three-Dimensional Tin(II) Perovskite-Derived Semiconductor

Ordering vacancies in hybrid Sn(II) halide semiconductors provides a strategy for preventing uncontrolled oxidation and formation of mobile holes. In this study, we report the structure and optical and electronic properties of (NH 3 (CH 2 ) 7 NH 3 ) 2 Sn 3 I 10 , a vacancy-ordered perovskite derivative with three-dimensional inorganic connectivity. The crystal structure resembles that of a Dion–Jacobson layered perovskite derivative, but with [SnI 5 ] square pyramids bridging the layers. UV–vis diffuse reflectance spectroscopy reveals a sharp onset of light absorption at 1.86(1) eV with the photoluminescence emission maximum at 1.90(1) eV. However, the maximum excitation occurs from 3.42 to 3.81 eV (325 to 370 nm), revealing a significant Stokes shift of 1.3 eV. The electronic properties determined from dark and time-resolved microwave conductivity measurements reveal a minimum carrier mobility of 4.3 × 10 –2 cm 2 V –1 s –1 and a maximum carrier density of 5.96 × 10 16 cm –3 , a uniquely low value for a hybrid Sn(II) halide semiconductor. The transport behavior in combination with first-principles calculations of the electronic band structure and dielectric permittivity suggest polaron-mediated electronic transport, yet the photogenerated carriers have a fast and fluence-dependent nonradiative recombination rate, suggestive of localized “defect-like” states at the band edge. The observed photoluminescence is most consistent with single-ion-like behavior of an asymmetric Sn(II) environment. Together, these results suggest that defect ordering presents a strategy for the reduction of mobile charge carriers at equilibrium.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗