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The 1999 evaluation for A = 125 mass chain (1999Ka26) has been revised using experimental results from decays and reactions. Adopted values for the level and decay properties are tabulated. Inconsistencies and discrepancies are noted.
The nuclear structure of the semi-magic isotope {sup 125}Sn was investigated by means of the {sup 124}Sn(n{sub th},{gamma}{gamma}){sup 125}Sn reaction and the {sup 124}Sn(d-vector,p){sup 125}Sn reaction. More than 400 levels, in most cases with their spin, parity, (d,p) spectroscopic factor, and {gamma} decay, were identified. About 750 {gamma} transitions from our (n,{gamma}{gamma}) experiment form the essentially complete {gamma}-decay scheme following thermal neutron capture. Using this extensive {gamma}-decay scheme the neutron binding energy was determined to be 5733.5(2) keV. The strong correlation of the (d,p) strengths and the (n,{gamma}) intensities for more than 50 levels gives evidence for the direct neutron capture process, which was studied in detail. The experimental data were compared with predictions of the quasiparticle phonon model.
The formation of antisite defects in Ge{sub 20}Te{sub 80} and Ge{sub 15}As{sub 4}Te{sub 81} vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the {sup 119mm}Sn({sup 119m}Sn), {sup 119m}Te({sup 119m}Sn), {sup 125}Sn({sup 125}Te), and {sup 125m}Te({sup 125}Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.
Status of thermal cycle test results for a nonfunctional daisy-chained peripheral ceramic column grid array (CCGA) and its plastic ball grid array (PBGA) version. both having 560 I/Os. were presented in last year's conference. Test results included environmental data for three different thermal cycle regimes (-55 C/125 C, -55 C/100 C, and -50 C /75 C). Update information on these - especially failure type for assemblies with high and low solder volumes-were presented. The thermal cycle test procedure followed those recommended IPC-9701 for tin-lead solder joint assemblies. Revision A of this specification covers guideline thermal cycle requirements for Pb-free solder joints. Some background information discussed during release of this specification with its current guideline recommendations were also presented. In a recent reliability investigation a fully populated CCGA with 717 I/Os was also considered for assembly reliability. evaluation. The functional package is a field-programmable gate array that has much higher processing power than its previous version. This new package is smaller in dimension, has no interposer, and has a thinner column wrapped with copper for reliability improvement. This paper will also present thermal cycle test results for this package assembly and its plastic version with 728 I/Os. both of which were exposed to three different cycle regimes. Two cycle profiles were those specified by IPC- 9701A for tin-lead, i.e. -55 to 100 C and -55 to 125 C and one was a cycle profile specified by Mil-Std-883, i.e.. -65 C/150 C which is generally used for ceramic hybrid packages. Per IPC-9701 A, test vehicles were built using daisy chain packages and were continuously monitored. The effects of many process and assembly variables-including corner staking commonly used for improving resistance to mechanical loading such as drop and vibration loads--were also considered as part of the test matrix. Optical photomicrographs were taken at various thermal cycle intervals to document damage progress and behavior. Representative samples of these along with cross-sectional photomicrographs at higher magnification taken by scanning electron microscopy (SEM) to determine crack propagation and failure analyses for packages are also presented.
The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO{sub 2}:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance–metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125 nm and 188 μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, including a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10{sup −3} Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3 dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.
In this work, highly conductive anode based on PEDOT:PSS is proposed as substitute of Indio-Tin Oxide (ITO) in flexible solar cells. The anodic conductive polymer was spin coated on a 125 μm thick polyethylene naphthalate (PEN) substrate. The obtained film was characterized in terms of structure and physical- chemical proprieties. The obtained results are very promising and the conductive film will be investigated in future as electrode in a complete polymeric solar cell.
Dry heat inactivation characteristics were compared for 4-6 (B. brevis) spores and microbes from the Cincinnati soil samples at 105, 112, and 125. Characterized were the survival curves of 4-6 (B. brevis) spores at 112, 115, 118, 120, and 125 C, and 1.2 microgram of water per ml of headspace air (closed tin-can system), and the morphological characteristics of 4-6 (B. brevis), 6-12 (B. lentus), 7-11 (B. coagulans), and B. subtilis var. niger spores by scanning electron microscopy.
We compare the extreme ultraviolet emission characteristics of tin and galinstan (atomic %: Ga: 78.35, In: 14.93, Sn: 6.72) between 10 nm and 18 nm in a laser-triggered discharge between liquid metal-coated electrodes. Over this wavelength range, the energy conversion efficiency for galinstan is approximately half that of tin, but the spectrum is less strongly peaked in the 13-15 nm region. The extreme ultraviolet source dimensions were 110 {+-} 25 {mu}m diameter and 500 {+-} 125 {mu}m length. The flatter spectrum, and -19 Degree-Sign C melting point, makes this galinstan discharge a relatively simple high radiance extreme ultraviolet light source for metrology and scientific applications.
Platinized tin oxide surfaces used for low-temperature CO oxidation in CO2 lasers have been characterized before and after reduction in CO at 125 and 250 C using ion scattering spectroscopy (ISS) and X ray photoelectron spectroscopy (XPS). XPS indicates that the Pt is present initially as PtO2. Reduction at 125 C converts the PtO2 to Pt(OH)2 while reduction at 250 C converts the PtO2 to metallic Pt. ISS shows that the Pt in the outermost atomic layer of the catalyst is mostly covered by substrate species during the 250 C reduction. Both the ISS and XPS results are consistent with Pt/Sn alloy formation. The surface dehydration and migration of substrate species over surface Pt and Sn appear to explain why a CO pretreatment at 250 C produces inferior CO oxidation activities compared to a 125 C pretreatment.
Platinized tin oxide surfaces used for low-temperature CO oxidation in CO2 lasers have been characterized before and after reduction in CO at 125 and 250 C using ion scattering spectroscopy (ISS) and X-ray photoelectron spectroscopy (XPS). XPS indicates that the Pt is present initially as Pto2. Reduction at 125 C converts the PtO2 to Pt(OH)2 while reduction at 250 C converts the PtO2 to metallic Pt. ISS shows that the Pt in the outermost atomic layer of the catalyst is mostly covered by substrate species during the 250 C reduction. Both the ISS and XPS results are consistent with Pt/Sn alloy formation. The surface dehydration and migration of substrate species over surface Pt and Sn appear to explain why a CO pretreatment at 250 C produces inferior CO oxidation activities compared to a 125 C pretreatment.
Purpose: To make benchtop x-ray fluorescence computed tomography (XFCT) practical for routine preclinical imaging tasks with gold nanoparticles (GNPs) by deploying, integrating, and characterizing a dedicated high-performance x-ray source and addition of simultaneous micro-CT functionality. Methods: Considerable research effort is currently under way to develop a polychromatic benchtop cone-beam XFCT system capable of imaging GNPs by stimulation and detection of gold K-shell x-ray fluorescence (XRF) photons. Recently, an ad hoc high-power x-ray source was incorporated and used to image the biodistribution of GNPs within a mouse, postmortem. In the current work, a dedicated x-ray source system featuring a liquid-cooled tungsten-target x-ray tube (max 160 kVp, ∼3 kW power) was deployed. The source was operated at 125 kVp, 24 mA. The tube’s compact dimensions allowed greater flexibility for optimizing both the irradiation and detection geometries. Incident x-rays were shaped by a conical collimator and filtered by 2 mm of tin. A compact “OEM” cadmium-telluride x-ray detector was implemented for detecting XRF/scatter spectra. Additionally, a flat panel detector was installed to allow simultaneous transmission CT imaging. The performance of the system was characterized by determining the detection limit (10-second acquisition time) for inserts filled with water/GNPs at various concentrations (0 and 0.010–1.0 wt%) and embedded in a small-animal-sized phantom. The phantom was loaded with 0.5, 0.3, and 0.1 wt% inserts and imaged using XFCT and simultaneous micro-CT. Results: An unprecedented detection limit of 0.030 wt% was experimentally demonstrated, with a 33% reduction in acquisition time. The reconstructed XFCT image accurately localized the imaging inserts. Micro-CT imaging did not provide enough contrast to distinguish imaging inserts from the phantom under the current conditions. Conclusion: The system is immediately capable of in vivo preclinical XFCT imaging with GNPs. Micro-CT imaging will require optimization of irradiation parameters to improve contrast. Supported by NIH/NCI grant R01CA155446; This investigation was supported by NIH/NCI grant R01CA155446.
High energy density capacitors made from metallized polyvinylidene fluoride film were built and tested. Terminations of aluminum-babbitt, tin-babbitt, and all-babbitt were evaluated. All-babbit terminations appeared to be better. The 0.1 microfarad and 2 microfarad capacitors were made of 6 micrometer material. Capacitance, dissipation factor, and insulation resistance measurements were made over the ranges -55 C to 125 C and 10 Hz to 100 kHz. Twelve of forty-one 0.1 microfarad capacitors survived a 5000 hour dc plus ac life test. Under the same conditions, the 2 microfarad capacitors exhibited overheating because of excessive power loss. Some failures occurred after low temperature exposures for 48 hours. No failures were caused by vibration or temperature cycling.
In order to investigate the plasma expansion behaviors and the electrical recovery process after the maximum implosion in our tin fueled laser-assisted discharge plasma (LDP) 13.5 nm EUV source, we developed and evaluated a cost-efficient spectroscopic method to determine the electron temperature T{sub e} and density n{sub e} simultaneously, by using Stark broadenings of two Sn II isolated lines (5s{sup 2}4f{sup 2}F{sup o}{sub 5/2} - 5s{sup 2}5d{sup 2}D{sub 3/2} 558.9 nm and 5s{sup 2}6d{sup 2}D{sub 5/2} - 5s{sup 2}6p{sup 2}P{sup o}{sub 3/2} 556.2 nm) spontaneously emitted from the plasma. The spatial-resolved evolutions of T{sub e} and n{sub e} of the expansion plasma over 50 to 900 ns after the maximum implosion were obtained using this modified Stark broadening method. According to the different n{sub e} decay characteristics along the Z-pinch axis, the expansion velocity of the electrons was estimated as {approx}1.2 x 10{sup 4} ms{sup -1} from the plasma shell between the electrodes towards the cathode and the anode. The decay time constant of n{sub e} was measured as 183 {+-} 24 ns. Based on the theories of plasma adiabatic expansion and electron-impact ionization, the minimum time-span that electrical recovery between the electrodes needs in order to guarantee the next succeeding regular EUV-emitting discharge was estimated to be 70.5 {mu}s. Therefore, the maximum repetition rate of our LDP EUV source is {approx}14 kHz, which enables the output to reach 125 W/(2{pi}sr).
HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.
Precise mass measurements of the neutron-rich 125–130 In isotopes have been performed with the TITAN Penning trap mass spectrometer. TITAN's electron beam ion trap was used to charge breed the ions to charge state q = 13+ thus providing the necessary resolving power to measure not only the ground states but also isomeric states at each mass number. Here, the properties of the ground states are investigated through a series of mass differentials, highlighting trends in the indium isotopic chain as compared to its proton-magic neighbor, tin (Z = 50). In addition, the energies of the indium isomers are presented. The (8 - ) level in 128 In is found to be 78 keV lower than previously thought and the (21/2 - ) isomer in 127 In is shown to be lower than the literature value by more than 150 keV.
The temperature-dependent structure evolution of the hybrid halide perovskite compounds, formamidinium tin iodide (FASnI 3 , FA + = CH[NH 2 ] 2 + ) and formamidinium lead bromide (FAPbBr 3 ), has been monitored using high-resolution synchrotron X-ray powder diffraction between 300 and 100 K. The data are consistent with a transition from cubic Pm$\bar{3}$m (No. 221) to tetragonal P 4 /mbm (No. 127) for both materials upon cooling; this occurs for FAPbBr 3 between 275 and 250 K, and for FASnI 3 between 250 and 225 K. Upon further cooling, between 150 and 125 K, both materials undergo a transition to an orthorhombic Pnma (No. 62) structure. The transitions are confirmed by calorimetry and dielectric measurements. In the tetragonal regime, the coefficients of volumetric thermal expansion of FASnI 3 and FAPbBr 3 are among the highest recorded for any extended inorganic crystalline solid, reaching 219 ppm K –1 for FASnI 3 at 225 K. Atomic displacement parameters of all atoms for both materials suggest dynamic motion is occurring in the inorganic sublattice due to the flexibility of the inorganic network and dynamic lone pair stereochemical activity on the B-site. Unusual pseudocubic behavior is displayed in the tetragonal phase of the FAPbBr 3 , similar to that previously observed in FAPbI 3 .
The development of a solar-driven water splitting device that replaces costly precious metals, while achieving stable high performance, is a major challenge. Transition metal phosphides are active and low-cost catalysts for the hydrogen evolution reaction (HER), although, none thus far have exhibited stable performance when interfaced with semiconductors. In this work, we report on a monolithic junction consisting of cubic-NiP 2 :TiN:Si, fabricated using both commercial and custom Si photovoltaics. Stable performance is achieved using an ultrathin film of crystalline TiN that effectively hinders atomic diffusion between interfaces during fabrication. Crystalline cubic-NiP 2 deposited on TiN/n + p-Si retains 97% of the bare Si photovoltage, comparable saturation current density to bare Si, and has a turnover frequency of 1.04 H 2 per site per s at -100 mV applied potential. In acid, it requires only -150 mV additional overpotential compared to the benchmark, Pt/TiN/n + p-Si, to reach a HER photocurrent density of -10 mA cm -2 . This photocathode maintains a stable H 2 photocurrent (±10%) for at least 125 hours, the duration of testing. When the same layers are fabricated on a commercial Si solar cell, this photocathode produced double the photocurrent density (36.3 mA cm -2 , under simulated 1.5 AM G illumination). Physical characterization gives detailed information on the properties responsible for the observed activity and durability of these interfaces. In general, the thin-film methodology presented here is widely applicable, demonstrates superior activity, and achieves long-term stability.
Because of the miniaturization of electronic devices, the reliability of electromigration has become a major concern when shrinking the solder dimensions in flip-chip joints. Fast reaction between solders and electrodes causes intermetallic compounds (IMCs) to form, which grow rapidly and occupy entire joints when solder volumes decrease. In this study, U-grooves were fabricated on Si chips as test vehicles. An electrode-solder-electrode sandwich structure was fabricated by using lithography and electroplating. Gaps exhibiting well-defined dimensions were filled with Sn3.5Ag solders. The gaps between the copper electrodes in the test sample were limited to less than 15 μm to simulate microbumps. The samples were stressed at various current densities at 100 °C, 125 °C, and 150 °C. The morphological changes of the IMCs were observed, and the dimensions of the IMCs were measured to determine the kinetic growth of IMCs. Therefore, this study focused on the influence of back stress caused by microstructural evolution in microbumps.