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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Material‐Driven Neuronal Oscillators and Filters via Active Reactance in CC‐NDR and VC‐NDR Electro‐Thermal Memristors

The continued scaling of artificial intelligence and telecommunications hardware is increasingly constrained by the power, bandwidth, and area limitations of transistor-based circuits. Neuromorphic processor units, analog oscillators, and active inductors and capacitors rely on complex multi-transistor architectures restricting material choices and incurring energy and footprint overhead. Here, we show that active reactance in electro-thermal memristors provides an intrinsic, material driven route to neuronal oscillator dynamics and signal processing. Using a physics-based compact modeling framework, we bridge negative differential resistance (NDR) and bias-tunable reactance, which underlies spiking dynamics in electro-thermal memristors. Memristors with negative temperature coefficients of resistance (TCR) manifest current-controlled (CC-) NDR and act as active inductors, thus generating spiking above a critical circuit capacitance; whereas memristors with positive TCR manifest voltage-controlled (VC-) NDR and active capacitance, leading to spiking above a critical inductance. By creating a compact model for La 0.7 Ca 0.3 MnO 3 as a representative VC-NDR material and comparing it with LaCoO 3 manifesting CC-NDR, we explain the physical origins of their distinct current-voltage characteristics, reactive phase shifts and consequent spiking behaviors. Finally, we demonstrate tunable filtering enabled by the active reactance of electro-thermal memristors, establishing them as a compact hardware platform for neuronal oscillator functionality and integrated filtering beyond conventional CMOS.

active reactance↗
DOE OSTI2025

Aligned carbon nanotubes for 1,000x improvement in computing (CRADA Final Report)

As part of the Cyclotron Road program, the Aligned Carbon team worked to improve and bring to market their technology to manufacture carbon nanotubes (CNTs) for integrated circuits. There are multiple applications which can benefit from the use of CNT based transistors in integrated circuits, including high performance computing, RF data transmission, and biosensing. Each of these applications faces a problem of poor starting CNT material to come to market. Aligned Carbon offers material with the highest ceiling of performance based around a fully aligned, uniform, on-wafer growth of CNTs and our proprietary purification process to remove metallic CNTs leaving only the semi-conducting ones behind. Further, Aligned Carbon has been guided by scalable manufacturing processes that will fit seamlessly into the integrated circuit foundry model of chip fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors

Nuclear Magnetic Resonance (NMR) electronics that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple induction coils from receive electronics. The solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated receive electronics.

Walsh, David O.↗
DOE OSTI2026

A Unidirectional Two-Compartment Neuron Circuit with On-chip STDP learning

Most neuromorphic chips implement the single-compartment point neuron model where synapse circuits connect directly to a leaky integrate and fire (LIF) soma circuit. However, when using a biologically plausible soma circuit (e.g., Hodgkin-Huxley neuron model), an interface circuitry, such as a current conveyor circuit, is needed to transmit synaptic current to the soma circuit. This is especially true for ultra-low power neuron circuits, where membrane capacitance is on the order of 20 fF. This need for an interface circuit arises because the parasitic capacitance and leakage current caused by fabrication mismatch and second-order effects of the output transistors in the synapse circuits can disturb the spiking dynamics of the soma circuit if connected without an interface. Using an interface circuit to isolate the soma’s membrane capacitor from synapses resolves this issue. We propose to use a unidirectional resistor (a transconductance circuit) to connect the synapse and soma circuits instead of conventional current conveyor circuits. Using a biologically plausible spike pattern detection model, we show that the on-chip spike-timing-dependent plasticity (STDP) learning performance of the proposed unidirectional two-compartment neuron circuit is similar to a single-compartment circuit (with a current conveyor as an interface) and additionally, it is more power-efficient and biologically plausible. The chip is fabricated in the Taiwan Semiconductor Manufacturing Company (TSMC) 250 nm technology node and comprises a single neuron circuit.

Gautam, Ashish [ORNL]↗
DOE OSTI2025

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. Here, we show that this circuit has a signal-to-noise ratio (SNR) of ~ 2 $\frac{e}{√Hz}$ at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.

Charge-Coupled Devices↗
DOE OSTI2025

PID-Regulated Heating System for PIP-II Reference Line

The Proton Improvement Plan 2 (PIP-II) centers on building a new superconducting linear particle accelerator (Linac) at Fermilab. At the heart of the accelerator is the reference line. It is a critical system that defines the ideal path for the beam as it passes through magnets, RF cavities, and other beamline elements. Temperature stability is crucial for the reliable operation of RF components, such as mixers and filters. Fluctuations affect key performance parameters like conversion loss, isolation, and linearity. To mitigate any drift caused by ambient temperature changes, a heating plate assembly is utilized to maintain key components at a controlled temperature of 40 C. Utilizing an actively regulated heating system, a metal-oxide-semiconductor field-effect transistor (MOSFET) based power control circuit which provides input to a controller; forming a closed-loop system that maintains the desired setpoints with high precision.

Mosher, Alexander [U. Illinois, Chicago]↗
DOE OSTI2025

Strong-coupling quantum dot microscope

Here, we report the development and fabrication of a novel cryogenic instrument, a scanning quantum dot microscope (SQDM), capable of positioning a quantum dot to within tunneling range of a sample surface. The microscope is strong-coupling in the sense that electron wavefunctions in the quantum dot can directly overlap with electron wavefunctions in the sample, in contrast to probes based on electric-field coupling. The SQDM consists of a sharp glass probe with two asymmetric electrodes leading to an aluminum quantum dot at the apex. One electrode is capacitively coupled to the quantum dot, while the other lead is connected to the dot via a tunneling junction. A charge sensing circuit constructed from a high-electron-mobility transistor is attached to the capacitance lead to measure the charge state of the dot. The last key feature of the design is a tilted-apex geometry. This design feature, in conjunction with the capacitive sensing scheme, results in a robust quantum-dot probe capable of operating within angstrom distances of the sample surface while protecting the single tunnel junction responsible for electron transport onto the quantum dot. We demonstrate that our instrument can detect single-electron tunneling events and can also be operated as a standard scanning tunneling microscope capable of nanometer-scale resolution of the surface topography.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Cryogenic-Refined MOSFET Modeling for Oscillator, Frequency Divider, and Amplifier Designs Below 4 K

Capturing device characteristic changes at cryogenic temperatures is crucial for cryo-CMOS circuit designs. In this work, we present an isothermal cryogenic-refined modeling approach for CMOS transistors that is simple, low overhead, and easy to implement while offering the required accuracy for predicting circuit performance at the designated temperatures. Guided by die-level measurement data and circuit design principles, the model introduces corrections to only five critical parameters: threshold voltage, carrier mobility, elevated low-frequency flicker noise, dominant high-frequency shot noise, and subthreshold swing (SS). These refinements are implemented around the foundry-provided SPICE model, which is typically validated only down to about 200 K. With these adjustments, the proposed cryogenic-refined model achieves less than 5% error in both large-signal metrics (I–V characteristics) and small-signal parameters (e.g., transconductance) when compared with device measurements at deep-cryogenic temperatures. The methodology is validated in two advanced technologies: TSMC 40-nm CMOS and GlobalFoundries (GF) 45-nm RF-SOI. We further demonstrate its applicability in three representative RF circuits: a 30-GHz LC oscillator, a high-speed current-mode-logic (CML) frequency divider (FD), and a subthreshold Gb/s amplifier, all showing close agreement between simulated predictions and measurements performed at 4 and 2.5 K. Finally, we believe that the proposed approach is implementation-friendly and can significantly accelerate the development of cryo-CMOS integrated circuits.

circuit modeling↗
DOE OSTI2024

Proton Conducting Neuromorphic Materials and Devices

Neuromorphic computing and artificial intelligence hardware generally aims to emulate features found in biological neural circuit components and to enable the development of energy-efficient machines. In the biological brain, ionic currents and temporal concentration gradients control information flow and storage. It is therefore of interest to examine materials and devices for neuromorphic computing wherein ionic and electronic currents can propagate. Protons being mobile under an external electric field offers a compelling avenue for facilitating biological functionalities in artificial synapses and neurons. In this review, we first highlight the interesting biological analog of protons as neurotransmitters in various animals. We then discuss the experimental approaches and mechanisms of proton doping in various classes of inorganic and organic proton-conducting materials for the advancement of neuromorphic architectures. Since hydrogen is among the lightest of elements, characterization in a solid matrix requires advanced techniques. We review powerful synchrotron-based spectroscopic techniques for characterizing hydrogen doping in various materials as well as complementary scattering techniques to detect hydrogen. First-principles calculations are then discussed as they help provide an understanding of proton migration and electronic structure modification. Outstanding scientific challenges to further our understanding of proton doping and its use in emerging neuromorphic electronics are pointed out.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A portable and reusable sensor system based on graphene for real-time and sensitive detection of lead ions in water

Long-term exposure to Pb 2+ can cause irreversible damage to the nervous, cardiovascular, and reproductive systems. Therefore, developing a fast and sensitive detection system capable of monitoring minuscule concentrations of Pb 2+ is essential. In this study, we demonstrated a fully portable sensor system enabling rapid, sensitive, and real-time monitoring of Pb 2+ . The sensor system adopted the remote-gate field-effect transistor (RGFET) detection scheme and was easy to operate, even for non-experts. The sensor system comprised two printed circuit boards (PCBs): a sensor PCB with a remote-gate electrode and an analyzer PCB with a metal-oxide-semiconductor field-effect transistor (MOSFET) transducer and peripheral electronics to manage sensor signals. To achieve a high sensitivity for Pb 2+ , we utilized graphene ink drop-casted on the sensor PCB as a sensing membrane. The graphene film was easy to deposit and remove, enabling the sensor PCB to be reused multiple times. The sensor system was further linked to a smartphone application that instantly monitors the sensor response, allowing for rapid point-of-use detection. The sensor exhibited a high sensitivity of 21.7% when the limit of detection (LOD) value of 1 nM (∼0.2 ppb) was detected, and the typical detection time for each sample was approximately 60 seconds. This portable sensor system advances sensing technologies and could potentially supplement expensive, laborious conventional sensing equipment.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

Improved Charge Sensing on a SiMOS Double Quantum Dot using a Cryogenic Skipper Readout ASIC (Quandarum)

Major outstanding questions in high-energy physics such as the nature of dark matter and the existence of interactions beyond the standard model require new measurement techniques which are extremely sensitive to minute electromagnetic fields. An array of entangled spin qubits is a promising system for building novel detectors due to its combination of sensitivity and controllability. CMOS-based electron spin qubits, which have demonstrated the operational requirements for fault-tolerant quantum computing [1], offer a particular opportunity due to their compatibility with classical electronics, which allows the leveraging of decades of development of low-noise cryogenic detectors for physics. In this work, we combine a SiMOS double-quantum dot device architecture with a state-of-the-art cryoelectronic readout circuit [2-3] aimed to demonstrate improved charge readout using a single-electron transistor (SET). We identify the design characteristics for an SET that facilitate the use of on-chip classical electronics as a low-power, high-bandwidth first amplification stage and explore opportunities for sensor-readout co-design to minimize noise. This is the first of a series of steps to demonstrate high-fidelity readout of a large array of spin qubit with enough sensitivity to probe processes of interest for the investigation of beyond-standard-model physics.

Quinn, Adam [Fermilab]↗
DOE OSTI2024

Localized Conduction Channels in Memristors

Since the early 2000s, the impending end of Moore’s scaling, as the physical limits to shrinking transistors have been approached, has fueled interest in improving the functionality and efficiency of integrated circuits by employing memristors or two-terminal resistive switches. Formation (or avoidance) of localized conducting channels in many memristors, often called “filaments”, has been established as the basis for their operation. While we understand some qualitative aspects of the physical and thermodynamic origins of conduction localization, there are not yet quantitative models that allow us to predict when they will form or how large they will be. Here, in this work, we compile observations and explanations of channel formation that have appeared in the literature since the 1930s, show how many of these seemingly unrelated pieces fit together, and outline what is needed to complete the puzzle. This understanding will be a necessary predictive component for the design and fabrication of post-Moore’s-era electronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel

The discovery of ferroelectricity in hafnium zirconium oxide (HfxZr 1−x O2) and related fluorite materials has spurred interest in ferroelectric devices suitable for integration with silicon integrated circuits (ICs), especially those that can be embedded in the back-end-of-line (BEOL) process. More recently, ferroelectricity has been found in wurtzite aluminum nitride-based materials, such as scandium and boron-doped aluminum nitride (Al 1−x ScxN and Al 1−x BxN). Although these materials currently have undesirably large coercive electric fields, and small breakdown electric field-to-coercive electric field ratio, their low processing temperatures and large remanent polarization offer intriguing possibilities for device applications. Furthermore, we report ferroelectric field-effect transistors (FeFETs) with a 15 nm thick Al0.88B0.12N layer and an 11 nm ZnO semiconductor channel, achieving a memory window >1 V and switching voltages ( V switch ) <±10 V.

42 ENGINEERING↗
DOE OSTI2024

Quantitative modeling of gate-tunable cavity exciton-polaritons in transition-metal dichalcogenides

We performed a comprehensive real-space simulation study of propagative exciton-polaritons (EPs) of tungsten disulfide (WS 2 ) inside a Fabry–Pérot cavity. Through our simulations, we were able to construct the dispersion relation and determine the propagation length (L p ) of EPs, both of which show sensitive dependence on the applied gate voltage. We found that L p increases at higher gate voltages when excited at the exciton energy but shows opposite gate dependence at the trion energy. These observations are direct evidence of the coupling between the cavity mode with excitons and trions of WS 2 . Furthermore, we demonstrate a proof-of-concept device based on the tunable cavity EPs of WS 2 , which is promising for application as photonic transistors, modulators, or electrical-to-optical converters. Furthermore, our work unveils the real-space transport properties of gate-tunable cavity EPs and paves the way for future applications of EPs in nanophotonic devices and circuits.

42 ENGINEERING↗
DOE OSTI2025

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗
DOE OSTI2025

Dendritic Computing with Multigate Ferroelectric Field-Effect Transistors

Although inspired by neuronal systems in the brain, artificial neural networks generally employ point-neurons, which offer computational complexity far less than that of their biological counterparts. Neurons have dendritic arbors that connect to different sets of synapses and offer local nonlinear accumulation – playing a pivotal role in processing and learning. Inspired by this, we propose a novel neuron design based on a multigate ferroelectric field-effect transistor that mimics dendrites. It leverages ferroelectric nonlinearity for local computations within dendritic branches while utilizing the transistor action to generate the neuronal output. The branched architecture enables smaller crossbar arrays in hardware integration, improving efficiency. Using an experimentally calibrated device-circuit-algorithm cosimulation framework, we demonstrate that networks incorporating our dendritic neurons achieve superior performance compared to much larger networks without dendrites (∼ 17× fewer trainable weight parameters). These findings suggest that dendritic hardware can significantly improve computational efficiency and learning capacity of neuromorphic systems optimized for edge applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Rapid Prototyping Techniques for Organic Direct-Bonded-Copper Power Modules

Organic Direct-Bonded-Copper (ODBC) is a novel packaging technology for power modules which allows higher flexibility in layout design. In this work, a set of rapid prototyping techniques are developed for ODBC modules based on a polyimide dielectric material. These techniques enable fast and low-cost fabrication of modules with 3-Dimensional (3D) layout features. An example half-bridge (HB) silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) module is designed and prototyped using the proposed techniques aiming at ultra-low power loop inductance. Finite element analysis (FEA)-circuit co-simulations results and experimental results validate an approximately 0.71nH power loop inductance for the example module design.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs

Ferroelectric random access memory (FeRAM) is a promising candidate for energy-efficient nonvolatile memory, particularly for logic-in-memory and compute-in-memory (CIM) applications. Among the available cell architectures, One-Transistor–n-Capacitor (1T-nC) and two-transistor–n-capacitor (2T-nC) FeRAMs each offer distinct trade-offs in density, scalability, and reliability. In this work, we present a comparative study of these two architectures under both dimensional scaling ( XY/Z shrinkage) and vertical integration (increasing stacked capacitors per cell). Using technology computer-aided design (TCAD) and circuit-level simulations, we analyze how scaling impacts ferroelectric capacitance, parasitic coupling, and floating-node (FN) dynamics, which together dictate sense margin (SM) and read stability. A key mitigation strategy—floating unselected capacitors—is applied to both architectures, effectively decoupling the SM from the number of stacked capacitors and enabling tractable analysis across scaling regimes. Results show that 1T-nC suffers more from charge sharing with the bitline (BL), while 2T-nC benefits from transistor isolation and stronger low-voltage sensing at the cost of increased area. By systematically evaluating these behaviors across scaling directions, this work establishes the reliability trade-offs of 1T-nC and 2T-nC cells and provides design guidelines for high-density, vertically integrated FeRAM systems.

1T-nC↗