Ion beam-assisted pulsed laser deposition of (Ba,Sr)(Ti,Zr)O{sub 3} films on Pt-Si substrates
Ion beam-assisted pulsed laser deposition with an Ar-oxygen ion mixture was used to prepare Ba{sub 0.6}Sr{sub 0.4}Ti{sub 0.7}Zr{sub 0.3}O{sub 3} (BSTZ) thin films on Pt-coated Si substrates. The ion beam with an anode voltage of 600 V was effective to reduce the thermal budget, i.e., to achieve similar crystallinity with approximately 100 deg. C lower deposition temperature compared to the cases without ionization. It was revealed that the dielectric properties (relative dielectric constant {epsilon}{sub r} and its electric field tunability), out-of-plane lattice parameter of (001)-oriented grains (a{sub 001}), and the existence of (110)-oriented grains are correlated with one another. Elongation of a{sub 001} was suppressed, resulting in large {epsilon}{sub r} values comparable with that of a ceramic bulk of the same composition, in the BSTZ films that contain (110)-oriented grains. Less volume of amorphous BSTZ region is supposed to be playing an important role for the bulklike properties of these BSTZ films.