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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Observation of tantalum deposition and growth on TiB2 and ZrB2 from PISCES-RF deuterium and helium plasma exposures

Deuterium and helium plasma exposures on bulk TiB2 and ZrB2 samples were performed using the PISCES-RF linear plasma device. 40 and 90 eV deuterium ion plasma exposures were performed at 240 and 800 °C sample temperatures, and 80 eV helium ion plasma exposures were performed at 800 °C sample temperatures. Following plasma exposures, it was discovered that two plasma conditions (90 eV deuterium and 80 eV helium at 800 °C) resulted in thick (>200 nm) tantalum-rich (>10 at%) surface features on the targets, presumably from tantalum sourced from a tantalum adapter mask or cap used as part of the target holder. This work aims to characterize these tantalum-rich features and examine the mechanisms of impurity deposition.Plasma-induced surface morphology of the tantalum-rich surface layers depends on plasma properties and target temperature and chemistry. Greater titanium sputtering compared to zirconium resulted in more distinct surface features in the TiB2 samples compared to the ZrB2 samples via increased, prompt deposition onto tantalum surface impurities. There is still uncertainty as to why thick tantalum deposition only occurred under some plasma exposure conditions but not others; it is likely due to tantalum sputtering by a combination of boron molecules from the targets and carbon-impurities in the tantalum mask or targets. Impurity driven surface features are a well-documented phenomena in samples exposed to plasma from linear plasma device facilities—this work confirms the occurrence of this and emphasizes the need for chemistry characterization of isolated post-mortem surface features in plasma-exposed samples.

Nuckols, Lauren↗
DOE OSTI2014

Analysis of shockless dynamic compression data on solids to multi-megabar pressures: Application to tantalum

Magnetically-driven, planar shockless-compression experiments to multi-megabar pressures were performed on tantalum samples using a stripline target geometry. Free-surface velocity waveforms were measured in 15 cases; nine of these in a dual-sample configuration with two samples of different thicknesses on opposing electrodes, and six in a single-sample configuration with a bare electrode opposite the sample. Details are given on the application of inverse Lagrangian analysis (ILA) to these data, including potential sources of error. The most significant source of systematic error, particularly for single-sample experiments, was found to arise from the pulse-shape dependent free-surface reflected wave interactions with the deviatoric-stress response of tantalum. This could cause local, possibly temporary, unloading of material from a ramp compressed state, and thus multi-value response in wave speed that invalidates the free-surface to in-material velocity mapping step of ILA. By averaging all 15 data sets, a final result for the principal quasi-isentrope of tantalum in stress-strain was obtained to a peak longitudinal stress of 330 GPa with conservative uncertainty bounds of ±4.5% in stress. The result agrees well with a tabular equation of state developed at Los Alamos National Laboratory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO 2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.

36 MATERIALS SCIENCE↗
NASA NTRS1977

The tantalum-cased tantalum capacitor

Tantalum-cased tantalum capacitors were tested with regard to temperature stability, capacitance ratio, surge current capabilities, shock, vibration, and thermal shock. They were found to be superior to the conventional wet slug tantalum capacitor cased in silver, since they are more resistant to sulfuric acid. The tantalum-cased tantalum capacitors are widely accepted for use in critical electronic equipment because of their excellent performance and reliability.

Moynihan, J. D.↗
NASA NTRS1965

Tantalum cathode improves electron-beam evaporation of tantalum

Tantalum cathode is used in assembly for electron beam evaporation of tantalum onto a substrate. The cathode and anode are made of pure tantalum rather than tungsten to prevent contamination of the tantalum film deposited on the substrate.

Source record↗
DOE OSTI2024

High-pressure synthesis and neutron scattering study of tantalum hydride TaH 1.23(5) and a tantalum polymorph with A15-type structure

A unique type of tantalum hydride was synthesized by exposing tantalum dihydride to the high hydrogen pressure of 9 GPa and a temperature of using toroid-type high-pressure chambers. The samples of this hydride were cooled down to 100 K, recovered to ambient pressure, and studied in a metastable state by hot extraction, powder x-ray and neutron diffraction, and inelastic neutron scattering. X-ray diffraction demonstrated that this hydride had an A15-type crystal structure of metal lattice (space group , Ta atoms at the 2a and 6c Wyckoff positions) and a lattice parameter of a = 5.150(5) Å at T = 85 K. The hydrogen content determined by hot extraction was H/Ta - 1.23(5). Hydrogen desorption during heating the sample in vacuum proceeded in two steps—first, Δ⁢H⁡/Ta=0.2 was desorbed at around -70 °⁢C, and then the rest of the hydrogen was desorbed between 100 ⁢°C and 390 ⁢°⁢C. The A⁢15-type metal lattice was preserved upon hydrogen removal, leaving a unique polymorph of tantalum. Neutron diffraction of A⁢15-TaH 1.23⁢(5) demonstrated that hydrogen atoms occupy the 24⁢k and 16⁢i Wyckoff sites in the crystal structure, and annealing at 250 K resulted in a decrease of the 24⁢k and an increase of the 16⁢i site occupancies. Inelastic neutron scattering revealed four vibrational modes in the fundamental band of A⁢15-TaH 1.23⁢(5) at 72, 135, 145, and 166 meV, the first three and the last one of which were tentatively assigned to the vibrations of H atoms at the 24⁢k and 16⁢i sites, respectively. No superconductivity was found in A⁢15-TaH 1.1 and hydrogen-free A15-Ta at temperatures down to 1.5 K.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Evolution of Tantalum Content During Vacuum Induction Melting and Electroslag Remelting of a Novel Martensitic Steel

The need for materials with superior thermal and mechanical properties while mitigating cost increases interest in new complex alloy compositions which brings challenges to manufacturing processes. In this investigation, vacuum induction melting (VIM) and electroslag remelting (ESR) of a novel tantalum (Ta)-containing martensitic steel was performed using standard industry practices at a laboratory scale. A 25 pct loss of Ta was measured from the VIM electrode to the ESR ingot using X-ray fluorescence. Several tools were used for broad characterization of the ingots, including LECO for chemistry analysis, scanning electron microscopy, and electron probe microanalysis for observation of the precipitate and inclusion phases post-VIM and post-ESR as well as computational modeling of the ESR process for the calculation of macrosegregation and inclusion travel. It was found that a significant amount of Ta{sub 2}O{sub 5} inclusions formed during VIM and were transferred to the slag during ESR. While ESR was particularly successful at decreasing the number density of inclusions by 95 pct, additional efforts are needed with regard to vacuum leak rate and purity of stock material when melting novel advanced steels.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Oxidation state and interfacial effects on oxygen vacancies in tantalum pentoxide

First-principles density-functional theory calculations are used to study the atomistic structure, structural energetics, and electron density near the O monovacancy (V{sub O}{sup n}; n = 0,1+,2+) in both bulk, amorphous tantalum pentoxide (a-Ta{sub 2}O{sub 5}), and also at vacuum and metallic Ta interfaces. We calculate multivariate vacancy formation energies to evaluate stability as a function of oxidation state, distance from interface plane, and Fermi energy. V{sub O}{sup n} of all oxidation states preferentially segregates at both Ta and vacuum interfaces, where the metallic interface exhibits global formation energy minima. In a-Ta{sub 2}O{sub 5}, V{sub O}{sup 0} is characterized by structural contraction and electron density localization, while V{sub O}{sup 2+} promotes structural expansion and is depleted of electron density. In contrast, interfacial V{sub O}{sup 0} and V{sub O}{sup 2+} show nearly indistinguishable ionic and electronic signatures indicative of a reduced V{sub O} center. Interfacial V{sub O}{sup 2+} extracts electron density from metallic Ta, indicating that V{sub O}{sup 2+} is spontaneously reduced at the expense of the metal. This oxidation/reduction behavior suggests careful selection and processing of both oxide layer and metal electrodes for engineering memristor device operation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effect of strain rate and dislocation density on the twinning behavior in tantalum

The conditions which affect twinning in tantalum have been investigated across a range of strain rates and initial dislocation densities. Tantalum samples were subjected to a range of strain rates, from 10{sup −4}/s to 10{sup 3}/s under uniaxial stress conditions, and under laser-induced shock-loading conditions. In this study, twinning was observed at 77 K at strain rates from 1/s to 10{sup 3}/s, and during laser-induced shock experiments. The effect of the initial dislocation density, which was imparted by deforming the material to different amounts of pre-strain, was also studied, and it was shown that twinning is suppressed after a given amount of pre-strain, even as the global stress continues to increase. These results indicate that the conditions for twinning cannot be represented solely by a critical global stress value, but are also dependent on the evolution of the dislocation density. In addition, the analysis shows that if twinning is initiated, the nucleated twins may continue to grow as a function of strain, even as the dislocation density continues to increase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study, we probed the atomic composition, local chemistry, and electronic structure of functioning tantalum oxide memristors through spatially mapped O K-edge x-ray absorption. We developed a time-multiplexed spectromicroscopy technique to enhance the weak and possibly localized oxide modifications with spatial and spectral resolutions of <30 nm and 70 meV, respectively. During the initial stages of conductance switching of a micrometer sized crosspoint device, the spectral changes were uniform within the spatial resolution of our technique. When the device was further driven with millions of high voltage-pulse cycles, we observed lateral motion and separation of ∼100 nm-scale agglomerates of both oxygen interstitials and vacancies. We also demonstrate a unique capability of this technique by identifying the relaxation behavior in the material during electrical stimuli by identifying electric field driven changes with varying pulse widths. In addition, we show that changes to the material can be localized to a spatial region by modifying its topography or uniformity, as against spatially uniform changes observed here during memristive switching. The goal of this report is to introduce the capability of time-multiplexed x-ray spectromicroscopy in studying weak-signal transitions in inhomogeneous media through the example of the operation and temporal evolution of a memristor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Yielding of tantalum at strain rates up to 10{sup 9 }s{sup −1}

We have used a 45 μJ laser pulse to accelerate the free surface of fine-grained tantalum films up to peak velocities of ∼1.2 km s{sup −1}. The films had thicknesses of ∼1–2 μm and in-plane grain widths of ∼75–150 nm. Using ultrafast interferometry, we have measured the time history of the velocity of the surface at different spatial positions across the accelerated region. The initial part of the histories (assumed to correspond to the “elastic precursor” observed previously) exhibited measured strain rates of ∼0.6 to ∼3.2 × 10{sup 9 }s{sup −1} and stresses of ∼4 to ∼22 GPa. Importantly, we find that elastic amplitudes exhibit little variation with strain rate for a constant peak surface velocity, even though, via covariation of the strain rate with peak surface velocity, they vary with strain rate. Furthermore, by comparison with data obtained at lower strain rates, we find that amplitudes are much better predicted by peak velocities rather than by either strain rate or sample thickness.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Microstructurally-Inspired Strategies to Print Tantalum and Tantalum-Tungsten Alloys

The goal of this project is to investigate strategies to print tantalum and tantalum- tungsten alloys, which are notoriously difficult to print with consistent results because of the sensitivity of the properties to small concentrations of interstitial impurities (particularly oxygen) and microstructure, and hence to processing conditions. The ultimate tensile stress (UTS) for non-additively manufactured Ta as a function of temperature shows a stunning variation. In direct metal laser sintering (DMLS) Ta, a strong dependence of porosity, grain morphology and texture on processing conditions was found.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Thick sputtered tantalum coatings for high-temperature energy conversion applications

Thick sputtered tantalum (Ta) coatings on polished Inconel were investigated as a potential replacement for bulk refractory metal substrates used for high-temperature emitters and absorbers in thermophotovoltaic energy conversion applications. In these applications, high-temperature stability and high reflectance of the surface in the infrared wavelength range are critical in order to sustain operational temperatures and reduce losses due to waste heat. The reflectance of the coatings (8 and 30 μm) was characterized with a conformal protective hafnia layer as-deposited and after one hour anneals at 700, 900, and 1100 °C. To further understand the high-temperature performance of the coatings, the microstructural evolution was investigated as a function of annealing temperature. X-ray diffraction was used to analyze the texture and residual stress in the coatings at four reflections (220, 310, 222, and 321), as-deposited and after anneal. No significant changes in roughness, reflectance, or stress were observed. No delamination or cracking occurred, even after annealing the coatings at 1100 °C. Overall, the results of this study suggest that the thick Ta coatings are a promising alternative to bulk substrates and pave the way for a relatively low-cost and easily integrated platform for nanostructured devices in high-temperature energy conversion applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

Abstract The interconnect half‐pitch size will reach ≈20 nm in the coming sub‐5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross‐section and they are much more resistive than Cu, the effective conductance of an ultrascaled interconnect will be compromised by the thick bilayer. Therefore, 2D layered materials have been explored as diffusion barrier alternatives. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back‐end‐of‐line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. Here, a 2D layered tantalum sulfide (TaS x ) with ≈1.5 nm thickness is developed to replace the conventional TaN/Ta bilayer. The TaS x ultrathin film is industry‐friendly, BEOL‐compatible, and can be directly prepared on dielectrics. The results show superior barrier/liner properties of TaS x compared to the TaN/Ta bilayer. This single‐stack material, serving as both a liner and a barrier, will enable continued scaling of interconnects beyond 5 nm node.

Lo, Chun‐Li↗
DOE OSTI2022

High-rate strength response of tantalum from dynamic hole closure experiments

The science and engineering communities have significant interest in experimental platforms to evaluate and improve models for dynamic material deformation. While well-developed platforms exist, there are still gaps to fill for strain and strain rate conditions accessed during impact and other high-rate loading scenarios. To fill one such gap for strength measurements, a platform was recently developed that accesses high strain rate (≥ 10 5 /s) and large strain (≥ 50%) conditions by measuring the transient closure of a cylindrical hole using in situ x-ray imaging. In the work reported here, further refinement of the platform is performed to reduce the potential effects of porosity and anelasticity on the measurement. This helps us to isolate the strength effects that are the focus of the experiment. The updated experimental configuration employs a two-layer flyer design and elongated target to reduce the magnitude of the tensile excursions associated with rarefaction wave interactions. This allows for a more direct assessment of strength models commonly used for dynamic simulations of metals. Here we apply the new technique to well-characterized tantalum material, allowing for a robust connection to other experimental techniques. Deformation localization can be a concern in large strain experiments, and to help inform future use of the experimental platform, we use simulations with a sub-zone treatment of shear banding to explore potential localization behavior. Here we develop and utilize an experimental configuration with improved isolation of strength effects that can be applied to an expanded range of materials.

42 ENGINEERING↗
DOE OSTI2022

Microstructurally-Inspired Strategies to Print Tantalum and Tantalum-Tungsten Alloys

The goal of this project is to investigate strategies to print tantalum and tantalumtungsten alloys, which are notoriously difficult to print with consistent results because of the sensitivity of the properties to small concentrations of interstitial impurities (particularly oxygen) and microstructure, and hence to processing conditions. In direct metal laser sintering (DMLS) Ta, a strong dependence of porosity, grain morphology and texture on processing conditions was found.

36 MATERIALS SCIENCE↗