New Low Thermal Conductivity Materials for Thermoelectric
A low lattice thermal conductivity is one of the requirements to achieve high thermoelectric figures of merit.
high phonon scatterng rates low lattice thermal cl↗
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New Low Thermal Conductivity Materials for Thermoelectric Applications
A low lattice themal conductivity is one of the conditions required to achieve high thermoelectric figures of merit. Several low themal conductivity materials were identified and developed over the past few years at JPL, including filled skutterudites and Zn (sub 4) Sb (sub 3) - based materials.
Thermal Conductivity phonon scattering themoelectr↗
Novel fabrication technique for improving the figure-of-merit of thermoelectric materials
Reduction of the thermal conductivity of thermoelectric materials in order to improve the figure of merit and, hence, the conversion efficiency is discussed. A novel fabrication technique that reduces the thermal conductivity without too adverse an effect on the electrical properties is reported. This is achieved by producing an oxygen-free, very-fine-grain SiGe alloy with very small (on the order of 50 A) precipitates.
Beaty, J. S.↗
Time changes in the thermal conductivity of silicon germanium thermoelectric material caused by alloying processes
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De Winter, F.↗
Preparation and Characterization of the Skutterudite-Related Phase Ru0.5Pd0.5 Sb3
A new skutterudite phase Ru0.5Pd0.5 Sb3 was prepared. It adds to the many materials with the skutterudite structure that have shown a good potential for thermoelectric applications. Single- phase polycrystalline samples were prepared and characterized by x-ray analysis, electron probe microanalysis, density, sound velocity, thermal expansion coefficient, and differential thermal analysis measurements.
ternary↗
Selenide technology evaluation program at JPL
Results are presented for experimental and analytical investigations of the overall performance of a selenide radioisotope thermoelectric generator intended to provide the electrical power for interplanetary spaceprobes such as the Galileo mission to Jupiter. The discussion focuses on technology areas of concern, electrical properties of the selenide thermoelectric materials used, and thermal conductivity of these materials for superior performance. It is shown that the selenide thermoelectric materials offer the advantage of high conversion efficiency. The long-life requirement on the power system for the Galileo mission necessitates proper design, known fabrication techniques, and reproducible assembly techniques in order to ensure stability of the thermoelectric properties. However, the thermophysical properties - sublimation and creep - of the p-material remains an area of considerable concern.
Stapfer, G.↗
Growth and Some Properties of Cr(sub 11)Ge(sub 19)
Cr(sub 11)Ge(sub 19) belongs to a large family of materials known as the Nowtny chimney-ladder compounds, some of which were recently proposed as advanced thermoelectric materials because of their low thermal conductivity related to their relatively complex crystal structure. In order to assess the potential of the compound Cr(sub 11)Ge(sub 19) for thermoelectric applications, we grew large single crystals of this peritectic compound by a vertical gradient freeze technique and measured the thermoelectric properties of the crystals.
Nowotny chimney-ladder compounds thermoelectric ma↗
Preparation and Some Properties of N-Type IrxCo1-xSB3 Solid Solutions
A number of studies have been recently devoted to the preparation and characterization of binary skutterudite materials to investigate their potential as advanced thermoelectric materials. These studies show that the potential of these binary skutterudite compounds is limited because of their relatively large thermal conductivity. In order to achieve high thermoelectric figure of merits for these materials, efforts should focus on thermal conductivity reduction. Recent results obtained on n-type CoSb3 and IrSb3 compounds have shown that n-type skutterudite materials might have a better potential for thermoelectric applications than p-type materials. The thermoelectric properties of p-type IrxCo1-xSb3 solid solutions have been recently investigated and it was shown that a substantial reduction in thermal conductivity was achieved. We prepared and measured some properties of n-type IrxCo1-xSb3 solid solutions. The samples are characterized by large Seebeck coefficient values and significantly lower thermal conductivity values than those measured on the binary compounds CoSb3 and IrSb3. A maximum ZT value of about 0.4 was obtained at a temperature of about 300(deg)C. Improvements in the figure of merit are possible in this system by optimization of the doping level.
Solid Solutions↗
Microfabricated thermoelectric power-generation devices
A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
Fleurial, Jean-Pierre↗
Microfabricated thermoelectric power-generation devices
A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
Fleurial, Jean-Pierre↗
Phonon-Scattering Centers Increase Thermoelectric Efficiency
Small particles that reduce thermal conductivity incorporated via powdermaking process. These particles reduce thermal conductivity of material thereby increasing its thermoelectric efficiency.
Vandersande, Jan↗
Cooling device featuring thermoelectric and diamond materials for temperature control of heat-dissipating devices
A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.
Vandersande, Ian W.↗
Effect of small scattering centers on the thermoelectric properties of p-type SiGe alloys
Theory predicts that the addition of ultra-fine, inert, phonon-scattering centers to thermoelectric materials will reduce their thermal conductivity. To investigate this prediction, ultrafine particulates (20 to 120 A) of silicon nitride have been added to boron-doped, p-type, 80/20 SiGe. All of the SiGe samples produced from ultrafine powder have lower thermal conductivities than standard SiGe, but high-temperature heat treatment increases the thermal conductivity back to the value for standard SiGe. However, the SiGe samples with silicon nitride, inert, phonon-scattering centers retained the lower thermal conductivity after several heat treatments. A reduction of approximately 25 percent in thermal conductivity has been achieved in these samples. The magnitude of the reduction agrees with theoretical predictions.
Beaty, John S.↗
Calibration of High Temperature Thermal Conductivity System: New Algorithm to Measure Heat Capacity Using Flash Thermal Diffusivity in Thermoelectric Materials
A viewgraph presentation describing thermoelectric materials, an algorithm for heat capacity measurements and the process of flash thermal diffusivity. The contents include: 1) What are Thermoelectrics?; 2) Thermoelectric Applications; 3) Improving Thermoelectrics; 4) Research Goal; 5) Flash Thermal Diffusivity; 6) Background Effects; 7) Stainless Steel Comparison; 8) Pulse Max Integral; and 9) Graphite Comparison Algorithm.
heat capacity↗
Thermal Conductivity of Zn(sub 4-x)Cd (sub x)Sb(sub 3) Solid Solutions
B-Zn(sub 4-x)Cd(sub x)Sb(sub 3) was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K.
Thermal Conductivity thermoelectric material↗
Surface-Micromachined Planar Arrays of Thermopiles
Planar two-dimensional arrays of thermopiles intended for use as thermal-imaging detectors are to be fabricated by a process that includes surface micromachining. These thermopile arrays are designed to perform better than do prior two-dimensional thermopile arrays. The lower performance of prior two-dimensional thermopile arrays is attributed to the following causes: The thermopiles are made from low-performance thermoelectric materials. The devices contain dielectric supporting structures, the thermal conductances of which give rise to parasitic losses of heat from detectors to substrates. The bulk-micromachining processes sometimes used to remove substrate material under the pixels, making it difficult to incorporate low-noise readout electronic circuitry. The thermoelectric lines are on the same level as the infrared absorbers, thereby reducing fill factor. The improved pixel design of a thermopile array of the type under development is expected to afford enhanced performance by virtue of the following combination of features: Surface-micromachined detectors are thermally isolated through suspension above readout circuitry. The thermopiles are made of such high-performance thermoelectric materials as Bi-Te and Bi-Sb-Te alloys. Pixel structures are supported only by the thermoelectric materials: there are no supporting dielectric structures that could leak heat by conduction to the substrate.
Foote, Marc C.↗
Disordered Zinc in Zn4Sb3 with Phonon-Glass and Electron-Crystal Thermoelectric Properties
By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.
phases↗
Compliant Interfacial Layers in Thermoelectric Devices
A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.
Firdosy, Samad A.↗