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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Toward virtual thin-beam 𝜈 cross-section measurements: A feasibility study of 𝜈-Ar interaction analysis with DUNE-PRISM

Neutrino-nucleus cross section measurements are critical for future neutrino oscillation analyses. However, our models to describe them require further refinement, and a deeper understanding of the underlying physics is essential for future neutrino oscillation experiments to realize their ambitious physics goals. Current neutrino cross section measurements provide clear deficiencies in neutrino interaction modeling, but almost all are reported averaged over broad neutrino fluxes, rendering their interpretation challenging. Using the concept of deep underground neutrino experiment-precision reaction independent spectrum measurement (DUNE-PRISM)—a movable near detector that samples multiple off axis positions—neutrino interaction measurements can be used to construct narrow virtual fluxes (less than 100 MeV wide). These fluxes can be used to extract charged-current neutrino-nucleus cross sections as functions of outgoing lepton kinematics within specific neutrino energy ranges. Based on a dedicated simulation with realistic event statistics and flux-related systematic uncertainties, but assuming an almost-perfect detector, we run a feasibility study demonstrating how DUNE-PRISM data can be used to measure muon neutrino charged-current integrated and differential cross sections over narrow fluxes. We find that this approach enables a largely model-independent reconstruction of powerful observables, including energy transfer, typically accessible only in electron scattering measurements, but that large exposures may be required for differential cross section measurements with few-percentage statistical uncertainties.

Neutrino interactions↗

Thermal and electromechanical response of ultra-thin carbon-strip polarimeter targets in relativistic bunched beams

Thin carbon-strip targets provide fast relative hadron beam polarimetry, but their response in intense relativistic bunched beams is not governed by local stopping-power heating alone. We develop a coupled response model that combines beam-target overlap, secondary-electron escape, retained heat, target motion, transient heat transport, RF-induced strip-end heating, beam-induced forces, resistance changes, and slack-strip deformation. RHIC target observations constrain the relevant motion, force, and nonlocal-heating scales and show that target survival depends on both beam-center heating and electromagnetic boundary conditions near the strip ends. Applying the model to Booster, AGS, RHIC, and EIC proton and 3 He cases shows that the RHIC proton lifetime scale is reproduced at the order-of-magnitude level, while the RHIC target-holder fin results require the additional RF/end-heating mechanism. For EIC proton flattop operation, carbon-strip polarimetry may remain viable only with reduced dwell time, sufficient detector acceptance, and suppression of RF-induced end heating. For cooled-emittance 3 He, the calculated sublimation-loss scale is far beyond a straightforward RHIC-like carbon-strip extrapolation. Conventional carbon strips are therefore unlikely to remain viable for the most demanding EIC light-ion cases without major changes in target motion, target technology, or diagnostic concept.

43 PARTICLE ACCELERATORS↗

Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam

Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness. To explore the possibility, promising candidate materials were selected, and particle tracking detectors were fabricated. An indium phosphide detector with a metal-intrinsic-metal structure has been fabricated for particle tracking. The detector was tested using radioactive sources and a high energy proton beam at Fermi National Accelerator Laboratory. In addition to its simplistic design and fabrication process, the indium phosphide particle detector showed a very fast response time of hundreds of picoseconds for the 120 GeV protons, which are comparable to the ultra-fast silicon detectors. This fast-timing response is attributed to the high electron mobility of indium phosphide. Such material properties can be leveraged to build novel detectors with superlative performance.

47 OTHER INSTRUMENTATION↗

Charges on a suspended silicon nitride membrane under a high-energy electron beam

Thin silicon nitride (SiN x ) membranes are widely used in gas and liquid phase transmission electron microscopy (TEM) and as phase plates to enhance imaging contrast. SiN x contains trap sites for both positive and negative charges, which can be manipulated by high-energy electron irradiation, external potential biasing, or light exposure. Charge accumulation on the membrane can significantly affect in situ TEM processes, including chemical and electrochemical reactions, nanoparticle dynamics, and catalytic activity, or introduce unwanted phase shifts when used as a phase plate. Here, in this study, charge accumulation on suspended SiN x membranes was investigated using off-axis electron holography combined with model-free charge analysis, supported by custom finite element analysis (FEA) simulations. An average residual positive charge density of approximately 2.8 × 10 −4 C m −2 was measured. Localized and stable regions of both positive and negative charges were identified on the membrane. The global positive and localized positive/negative charges give rise to strong electric fields and electroosmotic slip velocities at the membrane surface, which are sufficient to induce non-Brownian particle behavior and directional fluid flow, offering a physical explanation for previously observed anomalies in particle dynamics, nucleation, and growth during gas and liquid phase TEM experiments. These results provide a benchmark for understanding charge behavior at SiNx interfaces in gas and liquid phase TEM. Furthermore, the FEA simulations establish a framework for future investigations into charge distribution, electrostatic potentials, and electrical double layers at solid–liquid interfaces, particularly in complex geometries and chemically dynamic environments.

Suspended silicon↗

Adatom-Driven Oxygen Intermixing during the Deposition of Oxide Thin Films by Molecular Beam Epitaxy

Thin film deposition from the vapor phase is a complex process involving adatom adsorption, movement, and incorporation into the growing film. While simulations have been able to capture key aspects of these processes to reproduce film morphology, these models typically ignore any subsurface diffusion that occurs. The results of these diffusion and intermixing processes are often observed experimentally, but cannot be explained by invoking bulk lattice diffusion at the deposition temperature. In this work, we present quantitative experimental data that reveals anion and cation intermixing over long length scales during the deposition of epitaxial Fe 2 O 3 and Cr 2 O 3 films and heterostructures by oxygen-plasma-assisted molecular beam epitaxy. We track this diffusion by incorporating well-defined tracer layers containing 18 O and/or 57 Fe, and measure their redistribution on the nanometer scale with atom probe tomography. Molecular dynamics simulations suggest potential intermixing events, which are then examined via nudged elastic band calculations. These reveal that adatoms on the film surface act to “pull up” subsurface O and Fe. Subsequent ring-like rotation mechanisms involving both adatom and subsurface anions then facilitate their mixing. A simple model incorporating these events qualitatively agrees with the experimental intermixing results. In addition to film deposition, these intermixing mechanisms may to be operant during other surface-mediated processes such as heterogeneous catalysis and corrosion.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Machine-learning-enabled on-the-fly analysis of RHEED patterns during thin film deposition by molecular beam epitaxy

Thin film deposition is a fundamental technology for the discovery, optimization, and manufacturing of functional materials. Deposition by molecular beam epitaxy (MBE) typically employs reflection high-energy electron diffraction (RHEED) as a real-time in situ probe of the growing film. However, the state-of-the-art for RHEED analysis during deposition requires human observation. Here, we present an approach using machine learning (ML) methods to monitor, analyze, and interpret RHEED images on-the-fly during thin film deposition. In the analysis workflow, RHEED pattern images are collected at one frame per second and featurized using a pretrained deep convolutional neural network. The feature vectors are then statistically analyzed to identify changepoints; these changepoints can be related to changes in the deposition mode from initial film nucleation to a transition regime, smooth film deposition, and in some cases, an additional transition to a rough, islanded deposition regime. The feature vectors are additionally analyzed via graph analysis and community classification. The graph is quantified as a stabilization plot, and we show that inflection points in the stabilization plot correspond to changes in the growth regime. The full RHEED analysis workflow is termed RHAAPsody and includes data transfer and output to a visual dashboard. We demonstrate the functionality of RHAAPsody by analyzing the precaptured RHEED images from epitaxial depositions of anatase TiO2 on SrTiO3(001) and show that the analysis workflow can be executed in less than 1 s. Our approach shows promise as one component of ML-enabled real-time feedback control of the MBE deposition process.

36 MATERIALS SCIENCE↗

A thin-walled composite beam model for light-weighted structures interacting with fluids

A thin-walled beam model is proposed for structures of variable cross-section, which can be either open or closed and includes multicellular cross-sections with either isotropic or orthotropic materials. The proposed model does not require any priori definition of cross-sectional warping which instead results from the solution of the problem. To achieve that a special deformation pattern is superimposed on the bending deformation described by Euler–Bernoulli beam theory. All sectional properties are automatically incorporated in the analysis as a result of the usual variational formulation of the system of equations. The proposed model is specifically designed to simulate the dynamics of wind/hydrokinetic turbine blade with low computational cost, especially in fluid–structure interaction (FSI) simulation. A number of test cases have been carried out to validate the proposed structural model which show good agreement between the results obtained her e and the solutions available in literature. Finally, FSI simulation of a hydrokinetic blade under field condition is carried out to illustrate the capability of the current thin-walled beam model in practice.

42 ENGINEERING↗

Thin-Foil Heating with Intense Relativistic Electron Beams

Thin-metal foils are used in intense relativistic beam experiments for various purposes. In planning these experiments and analyzing the results it is often desirable to have an estimate of the temperature reached during the beam pulse. This can be deduced from an estimate of the energy deposited by the beam, and the specific heat capacity of the material, which depends on the temperature. The methodology for doing this is explained herein, and a metric for foil survivability under heating by an intense relativistic electron beam is suggested.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Higher-order harmonic generation and strong field ionization with Bessel–Gauss beams in a thin jet geometry

A promising alternative to Gaussian beams for use in strong field science is Bessel–Gauss (BG or Bessel-like) laser beams, as they are easily produced with readily available optics and provide more flexibility of the spot size and working distances. Here we use BG beams produced with a lens-axicon optical system for higher-order harmonic generation (HHG) in a thin gas jet. The finite size of the interaction region allows for scans of the HHG yield along the propagation axis. Further, by measuring the ionization yield in unison with the extreme ultraviolet (XUV), we are able to distinguish regions of maximum ionization from regions of optimum XUV generation. This distinction is of great importance for BG fields, as the generation of BG beams with axicons often leads to oscillations of the on-axis intensity, which can be exploited for extended phase-matching conditions. We observed such oscillations in the ionization and XUV flux along the propagation axis for the first time. As is the case for Gaussian modes, the harmonic yield is not maximum at the point of highest ionization. Finally, despite Bessel beams having a hole in the center in the far field, the XUV beam is well collimated, making BG modes a great alternative when spatial filtering of the fundamental is desired.

Davino, Michael↗

Dynamic Excitonic Beam Switching with Atomically‐Thin Binary Blazed Gratings

Abstract Beam steering metasurfaces are ultra‐compact optical coatings that offer on‐demand redirection of optical power to specific diffraction orders. To achieve this, spatial gradients are commonly introduced in the phase of light scattered by plasmon or Mie resonant nanoparticles within the metasurface grating's unit cell. However, these phase gradients are oftentimes difficult to tune post‐fabrication. Recently, excitons in monolayer 2D semiconductors have emerged as a new metasurface building block, due to their strong and electrically‐tunable resonant light‐matter interaction. These 2D excitonic metasurfaces offer the tantalizing prospect of beam switching within a single monolayer. Here, it is demonstrated how the 2D analog of binary blazed gratings enables such beam switching by mere nanopatterning of a large monolayer WS 2 , even though nanoscale ribbons of WS 2 do not support geometrical resonances. By introducing a gradient in the nanoribbon width within the metasurface unit cell, an amplitude gradient combined with a small phase gradient in the scattered fields results in asymmetric diffraction efficiencies. Using a scattered‐field analysis, it is shown that these gradients can be further engineered via interference effects with the substrate reflection. Finally, the electrical tunability of the exciton resonance is leveraged to achieve selective and dynamic beam switching with an atomically‐thin metasurface.

Guarneri, Ludovica [Van der Waals‐Zeeman Institute↗

Improving the laser performance of ion beam sputtered dielectric thin films through the suppression of nanoscale defects by employing a xenon sputtering gas

Laser damage-prone precursors in high index materials such as hafnia are believed to be the primary limiter in the performance of dielectric multilayer films to advance ultra-high power and energy laser applications. Removing or suppressing these precursors is the key to fabricating laser damage resistant thin films for the enabling technologies. Early work has revealed that nanobubbles formed by entrapped argon (Ar) working gas in ion beam sputtering (IBS) produced hafnia films are primarily responsible for the onset of laser damage upon exposure to UV, ns-laser pulses. In this study, we demonstrate that the UV ns-laser damage onset of IBS produced hafnia films can be improved to 3.1 +/- 0.2 J/cm 2 by substituting the conventional Ar working gas with xenon (Xe), a nearly 1 J/cm 2 increase from that of the Ar produced hafnia films. In addition to the suppression of the overall point-defect density of the hafnia films, the reduction of the Xe entrapment eliminates the nanobubbles and the generation of plasmas that initiates the laser damage. The defect suppression and its correlation to the increase in laser damage threshold is revealed by the combined analysis of Rutherford backscattering spectroscopy, electron paramagnetic resonance spectroscopy, transmission electron microscopy, and laser damage testing. Monte Carlo simulations suggest a much smaller entrapment of Xe gas by comparison to Ar, which is attributed to the significant difference in the energy of the reflected neutrals (3X) which are likely to be implanted. These results provide an effective process route with a fundamental understanding for producing high laser damage resistant dielectric films for high power and high energy laser applications.

36 MATERIALS SCIENCE↗

Diffusion-assisted molecular beam epitaxy of CuCrO 2 thin films

Using molecular beam epitaxy (MBE) to grow multielemental oxides (MEOs) is generally challenging, partly due to difficulty in stoichiometry control. Occasionally, if one of the elements is volatile at the growth temperature, stoichiometry control can be greatly simplified using adsorption-controlled growth mode. Otherwise, stoichiometry control remains one of the main hurdles to achieving high-quality MEO film growths. Here, in this paper, we report another kind of self-limited growth mode, dubbed diffusion-assisted epitaxy, in which excess species diffuses into the substrate and leads to the desired stoichiometry, in a manner similar to the conventional adsorption-controlled epitaxy. Specifically, we demonstrate that using diffusion-assisted epitaxy, high-quality epitaxial CuCrO 2 films can be grown over a wide growth window without precise flux control using MBE.

36 MATERIALS SCIENCE↗

Effects of deposition and annealing conditions on the crystallisation of NiTi thin films by e-beam evaporation

This Letter demonstrates the effects of deposition and annealing conditions on the crystallisation of nickel–titanium (NiTi) thin films deposited by the e-beam evaporation. NiTi thin films of 0.5 μm thick are fabricated on P-type (110) silicon substrates using the e-beam evaporation technique. We find that with the characterisations using the X-ray diffraction method, the results indicate that low e-beam deposition rate and argon employed annealing procedures can be beneficial to the formation of NiTi crystalline structure. Additionally, the as-deposited NiTi thin films without annealing procedures are amorphous, when deposited on the substrates at low temperatures. The differential scanning calorimetry studies show NiTi thin films formed by the e-beam evaporation are Ni-rich. Furthermore, SEM images illustrate that high-precision patterned NiTi thin film microstructures can be fabricated by combining with the e-beam evaporation and lift-off resist methods, without any wet or dry etching procedures. The proposed fabrication process for NiTi thin film microstructures shows great potential for application in shape memory alloy medical devices, as well as the micro-robotics.

36 MATERIALS SCIENCE↗

Single-beam plasma source deposition of carbon thin films

A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon (a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C 2 H 2 gas, a-C:H films were deposited at a rate of ~26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transparent with a transmittance of over 90% in the infrared range and an optical bandgap of 2.04 eV. Young’s modulus of the a-C:H film was ~80 GPa. The combination of the low-temperature high-rate deposition of transparent a-C:H films with moderately high Young’s modulus makes the single-beam plasma source attractive for many coatings applications, especially in which heat-sensitive and soft materials are involved. Here, the single-beam plasma source can be configured into a linear structure, which could be used for large-area coatings.

14 SOLAR ENERGY↗

Demonstration of nearly pinhole-free epitaxial aluminum thin films by sputter beam epitaxy

Superconducting resonators with high quality factors have been fabricated from aluminum films, suggesting potential applications in quantum computing. Improvement of thin film crystal quality and removal of void and pinhole defects will improve quality factor and functional yield. Epitaxial aluminum films with superb crystallinity, high surface smoothness, and interface sharpness were successfully grown on the c-plane of sapphire using sputter beam epitaxy. This study assesses the effects of varying substrate preparation conditions and growth and prebake temperatures on crystallinity and smoothness. X-ray diffraction and reflectivity measurements yield extensive Laue oscillations and Kiessig thickness fringes for films grown at 200 °C under 15 mTorr Ar, indicating excellent crystallinity and surface smoothness; moreover, an additional substrate preparation procedure which involves (1) a modified substrate cleaning procedure and (2) prebake at 700 °C in 20 mTorr O 2 is shown by atomic force microscopy to yield nearly pinhole-free film growth while maintaining epitaxy and high crystal quality. The modified cleaning procedure is environmentally friendly and eliminates the acid etch steps common to conventional sapphire preparation, suggesting potential industrial application both on standard epitaxial and patterned surface sapphire substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗