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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi 2 Te 2 Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 mΩ · cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Spin Texture Control and Magnetic Gap Engineering in a Ferromagnetic Insulator–Topological Insulator Sandwiched Heterostructure

Quantum materials that combine magnetism with topological order are emerging as key platforms for next-generation spintronics and low-energy electronics. They enable the realization of emergent quantum phenomena, such as the quantum anomalous Hall effect and axion insulator states. The ferromagnetic insulator (FMI)/topological insulator (TI)/FMI sandwich structure of a single-septuple layer (1SL) MnBi 2 Te 4 /four-quintuple layer (4QL) Bi 2 Te 3 /1SL MnBi 2 Te 4 holds great potential to achieve such desirable quantum phenomena at an elevated temperature, owing to its large Dirac point band gap and high Curie temperature. Here, for this work, spin- and angle-resolved photoemission spectroscopy (spin-ARPES) is employed to directly verify that the band gap arises from broken time-reversal symmetry via proximity-driven magnetization. This study demonstrates direct control of the spin state via external magnetic fields and unambiguously confirms the exchange interaction as the gap-opening mechanism. The robust magnetic gap and controllable spin texture make this heterostructure a suitable candidate for spintronic applications and magnetic topological quantum phases.

exchange gap↗
DOE OSTI2025

Non-equilibrium states and interactions in the topological insulator and topological crystalline insulator phases of NaCd4As3

Topological materials are of great interest because they can support metallic edge or surface states that are robust against perturbations, with the potential for technological applications. Here, we experimentally explore the light-induced non-equilibrium properties of two distinct topological phases in NaCd4As3: a topological crystalline insulator (TCI) phase and a topological insulator (TI) phase. This material has surface states that are protected by mirror symmetry in the TCI phase at room temperature, while it undergoes a structural phase transition to a TI phase below 200 K. After exciting the TI phase by an ultrafast laser pulse, we observe a leading band edge shift of >150 meV that slowly builds up and reaches a maximum after ∼0.6 ps and that persists for ∼8 ps. The slow rise time of the excited electron population and electron temperature suggests that the electronic and structural orders are strongly coupled in this TI phase. It also suggests that the directly excited electronic states and the probed electronic states are weakly coupled. Both couplings are likely due to a partial relaxation of the lattice distortion, which is known to be associated with the TI phase. In contrast, no distinct excited state is observed in the TCI phase immediately or after photoexcitation, which we attribute to the low density of states and phase space available near the Fermi level. Our results show how ultrafast laser excitation can reveal the distinct excited states and interactions in phase-rich topological materials.

Angle-resolved photoemission spectroscopy↗
DOE OSTI2021

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators.

Topological insulators (TIs) host spin-momentum locked surface states that are inherently susceptible to magnetic proximity modulations, making them promising for nano-electronic, spintronic, and quantum computing applications. While much effort has been devoted to studying (quantum) anomalous Hall effects in magnetic magnetically doped TIs, the inherent magnetoresistance (MR) properties in magnetic proximity-coupled surface states remain largely unexplored. Here, we directly exfoliate Bi 2 Se 3 TI flakes onto a magnetic insulator, yttrium iron garnet, and measure the MR at various temperatures. We experimentally observe an anisotropic magnetoresistance that is consistent with a magnetized surface state. Our results indicate that the TI has magnetic anisotropy out of the sample plane, which opens an energy gap between the surface states. Additionally, by applying a magnetic field along any in-plane orientation, the magnetization of the TI rotates toward the plane and the gap closes. Consequently, we observe a large (similar to 6.5%) MR signal that is attributed to an interplay between coherent rotation of magnetization within a topological insulator and abrupt switching of magnetization in the underlying magnetic insulator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Influence of disorder on antidot vortex Majorana states in three-dimensional topological insulators

Topological insulator/superconductor two-dimensional heterostructures are promising candidates for realizing topological superconductivity and Majorana modes. In these systems, a vortex pinned by a prefabricated antidot in the superconductor can host Majorana zero-energy modes (MZMs), which are exotic quasiparticles that may enable quantum information processing. However, a major challenge is to design devices that can manipulate the information encoded in these MZMs. One of the key factors is to create small and clean antidots, so the MZMs, localized in the vortex core, have a large gap to other excitations. If the antidot is too large or too disordered, the level spacing for the subgap vortex states may become smaller than temperature. In this paper, we numerically investigate the effects of disorder, chemical potential, and antidot size on the subgap vortex spectrum, using a two-dimensional effective model of the topological insulator surface. Our model allows us to simulate large system sizes with vortices up to 1.8 µ⁢m in diameter (with a 6 nm lattice constant). We also compare our disorder model with the transport data from existing experiments. As a result, we find that the spectral gap can exhibit a nonmonotonic behavior as a function of disorder strength, and that it can be tuned by applying a gate voltage.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Observation of nonlinear planar Hall effect in magnetic-insulator–topological-insulator heterostructures

Interfacing topological insulators (TIs) with magnetic insulators (MIs) have been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of the magnetic proximity effect (MPE) imposed to TIs. Here, in this work, we report the observation of the nonlinear planar Hall effect (NPHE) in Bi 2 ⁢Se 3 films grown on MI thulium and yttrium-iron-garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi 2 ⁢Se 3 grown on nonmagnetic gadolinium-gallium-garnet (GGG) substrate. The nonlinear Hall resistance in TmIG/Bi 2 ⁢Se 3 depends linearly on the external magnetic field, while that in YIG/Bi 2 ⁢Se 3 exhibits an extra hysteresis loop around zero field. The magnitude of the NPHE is found to scale inversely with carrier density. We speculate that the observed NPHE is related to the MPE-induced exchange gap opening and out-of-plane spin textures in the TI surface states, which may be used as an alternative transport signature of the MPE in MI/TI heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Synthesis, Magnetic Properties, and Electronic Structure of Magnetic Topological Insulator MnBi 2 Se 4

The intrinsic magnetic topological insulators MnBi 2 Te 4 and MnBi 2 Se 4 support novel topological states related to symmetry breaking by magnetic order. Unlike MnBi 2 Te 4 , the study of MnBi 2 Se 4 has been inhibited by the lack of bulk crystals, as the van der Waals (vdW) crystal is not the thermodynamic equilibrium phase. In this study, we report the layer-by-layer synthesis of vdW MnBi 2 Se 4 crystals using nonequilibrium molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy and scanning tunneling microscopy identify a well-ordered vdW crystal with septuple-layer base units. The magnetic properties agree with the predicted layered antiferromagnetic ordering but disagree with its predicted out-of-plane orientation. Instead, our samples exhibit an easy-plane anisotropy, which is explained by including dipole–dipole interactions. Angle-resolved photoemission spectroscopy reveals the gapless Dirac-like surface state, which demonstrates that MnBi 2 Se 4 is a topological insulator above the magnetic-ordering temperature. These studies show that MnBi 2 Se 4 is a promising candidate for exploring rich topological phases of layered antiferromagnetic topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars

Abstract High-purity crystalline solid-state materials play an essential role in various technologies for quantum information processing, from qubits based on spins to topological states. New and improved crystalline materials emerge each year and continue to drive new results in experimental quantum science. This article summarizes the opportunities for a selected class of crystalline materials for qubit technologies based on spins and topological states and the challenges associated with their fabrication. We start by describing semiconductor heterostructures for spin qubits in gate-defined quantum dots and benchmark GaAs, Si, and Ge, the three platforms that demonstrated two-qubit logic. We then examine novel topologically nontrivial materials and structures that might be incorporated into superconducting devices to create topological qubits. We review topological insulator thin films and move onto topological crystalline materials, such as PbSnTe, and its integration with Josephson junctions. We discuss advances in novel and specialized fabrication and characterization techniques to enable these. We conclude by identifying the most promising directions where advances in these material systems will enable progress in qubit technology.

Scappucci, G. (ORCID:0000000325120079)↗
DOE OSTI2020

Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator

A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. Here, we report a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T = 2–3 K and an AHE at T = 80–300 K. Over T = 3–80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to a Dzyaloshinskii–Moriya interaction (DMI) at the interface; the DMI strength estimated is substantially higher than that in heavy metal-based systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Plasmon coupling in topological insulator multilayers

Topological insulators (TIs) house two-dimensional Dirac plasmons on their surfaces. In TI thin films, plasmons on the top and bottom surfaces couple electrostatically, giving rise to an acoustic and an optical plasmon mode. By extension, a superlattice comprising TI layers and trivially-insulating layers could house multiple complex plasmon modes which could be used to create a new type of Dirac metamaterial. In this paper, we synthesize TI superlattices, fabricate them into stripe arrays, characterize their optical and plasmonic properties, and model the samples using transfer matrices. Furthermore, we excite plasmon modes that couple to the phonons in the superlattice, resulting in hybrid plasmon phonon polaritons. These modes are modeled using an analytical Fano resonance model and the extracted resonant positions are reproduced by transfer matrix modeling. We also excite an epsilon-near-zero mode in the top dielectric material (Bi 0.5 In 0.5 ) 2 Se 3 . Understanding the behavior of the polariton modes in this complex system will lend insight into the many-body interaction in low-dimensional systems.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Phase-Slip Lines and Anomalous Josephson Effects in Tungsten Nanoscale Cluster-Based Topological Insulator Nanobridges: Implications for Topologically Protected Qubits and Quantum Sensors

Superconducting topological systems formed by a strong 3D topological insulator (TI) in proximity to a conventional s-wave superconductor (SC) have been intensely studied, as they may host Majorana zero modes. However, there are limited experimental realizations of TI-SC systems in which robust superconducting pairing is induced on the surface states of the TI and a topological superconducting state is established. Here, we fabricate a TI-SC system by depositing, via a focused ion beam, tungsten (W) nanoscale clusters on the surface of TI Bi 0.91 Sb 0.09 . We find that the resulting heterostructure supports phase-slip lines (PSLs) that act as effective Josephson junctions (JJs). Here, we probe the response of the system to microwave radiation. We find that for some ac frequencies, and powers, the resulting Shapiro steps’ structure of the voltage–current characteristic exhibits a missing first step and an unexpectedly wide second Shapiro step. The theoretical analysis of the measurements shows that the unusual Shapiro response arises from the interplay between a static JJ and a dynamic one and allows us to identify the conditions under which the missing first step can be attributed to the topological nature of the JJs formed by the PSLs. Our results suggest an approach to induce superconductivity in a TI, a route to realizing highly transparent topological JJs, and show how the response of superconducting systems to microwave radiation can be used to infer the dynamics of PSLs. Highly transparent topological junctions are promising candidates to realize vector field sensors with very high sensitivity. In addition, due to the nontrivial Berry phase of the TI’s surface states such junctions can be in a topological state which is ideal to create topologically protected qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

The Zintl phases A In 2 As 2 (A = Ca, Sr, Ba): new topological insulators and thermoelectric material candidates

Recently, there has been a lot of interest in topological insulators (TIs), being electronic materials, which are insulating in their bulk but with the gapless exotic metallic state on their surface. The surface states observed in such materials behave as a perfect conductor thereby making them more suited for several cutting-edge technological applications such as spintronic devices. Here, we report the synthesis and structural characterization of the Zintl phases AIn 2 As 2 (A = Ca, Sr, Ba), which could become a new class of TIs. Crystal structure elucidation by single-crystal X-ray diffraction reveals that CaIn 2 As 2 and SrIn 2 As 2 are isostructural and crystallize in the EuIn 2 P 2 structure type (space group P6 3 /mmc, no. 194, Z = 2) with unit cell parameters a = 4.1482(6) Å, c = 17.726(4) Å; and a = 4.2222(6) Å, c = 18.110(3) Å, respectively. Their hexagonal structure is made up of alternating [In 2 As 2 ] 2– layers separated by slabs of A 2+ cations. BaIn 2 As 2 on the other hand crystallizes in the monoclinic EuGa 2 P 2 structure type (space group P2/m, no. 10, Z = 4) with unit cell parameters a = 10.2746(11) Å, b = 4.3005(5) Å, c = 13.3317(14) Å and β = 95.569(2)°. This structure is also layered, and it is made up of different type of polyanionic [In 2 As 2 ] 2– units and Ba 2+ cations. The valence electron count for all three compounds adheres to the Zintl-Klemm formalism, and all elements achieve closed-shell electronic configurations. Bulk electronic structure calculations indicate the opening of a bandgap E g ~ 0.03 eV (CaIn 2 As 2 and Sr 2 In 2 As 2 ), and E g ~0.21 eV (BaIn 2 As 2 ) in the absence of strain and spin–orbit coupling (SOC). Furthermore, these results argue in favor of the realization of a nontrivial topological insulator state under the influence of tensile strain and SOC. Preliminary transport properties on BaIn 2 As 2 are suggestive of a degenerate p-type semiconductor—a behavior which is sought after in thermoelectric (TE) materials. Since both TIs and excellent TE materials are known to favor the same material properties such as narrow bandgap, heavy elements, and strong SOC, these three Zintl phases are also projected as candidates TE materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Higher-order nodal hinge states in doped superconducting topological insulator

Doped strong topological insulators are one of the most promising candidates to realize a fully gapped three-dimensional topological superconductor (TSC). In this Letter, we revisit this system and reveal a possibility for higher-order topology which was previously missed. We find that over a finite range of doping, the Fu-Berg superconducting pairing can give rise to both Majorana surface states and nodal hinge states. Interestingly, we observe the coexistence of surface and hinge modes in the superconducting state only when there are both bulk and surface Fermi surfaces in the normal state. Furthermore, we find that the hinge modes can appear for normal states consisting of doped strong or weak topological insulators. In summary, this work may allow for the discovery of superconducting hinge modes in a well explored class of materials, i.e., doped strong or weak topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Observation and control of the weak topological insulator state in ZrTe5

Abstract A quantum spin Hall (QSH) insulator hosts topological states at the one-dimensional (1D) edge, along which backscattering by nonmagnetic impurities is strictly prohibited. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to strong topological insulators (STIs). However, the topological side surface is usually not cleavable and is thus hard to observe. Here, we visualize the topological states of the WTI candidate ZrTe 5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap is controlled by external strain, realizing a more stable WTI state or an ideal Dirac semimetal (DS) state. The highly directional spin-current and the tunable band gap in ZrTe 5 will provide an excellent platform for applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗