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Results for “Topological materials”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Electronic structure and relaxation dynamics in a superconducting topological material

Topological superconductors host new states of quantum matter which show a pairing gap in the bulk and gapless surface states providing a platform to realize Majorana fermions. Recently, alkaline-earth metal Sr intercalated Bi2Se3 has been reported to show superconductivity with a Tc~3K and a large shielding fraction. Here we report systematic normal state electronic structure studies of Sr0.06Bi2Se3 (Tc~2.5K) by performing photoemission spectroscopy. Using angle-resolved photoemission spectroscopy (ARPES), we observe a quantum well confined two-dimensional (2D) state coexisting with a topological surface state in Sr0.06Bi2Se3. Furthermore, our time-resolved ARPES reveals the relaxation dynamics showing different decay mechanism between the excited topological surface states and the two-dimensional states. Our experimental observation is understood by considering the intra-band scattering for topological surface states and an additional electron phonon scattering for the 2D states, which is responsible for the superconductivity. Our first-principles calculations agree with the more effective scattering and a shorter lifetime of the 2D states. In conclusion, our results will be helpful in understanding low temperature superconducting states of these topological materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Pressure-induced superconductivity in a three-dimensional topological material ZrTe 5

As a new type of topological materials, ZrTe 5 shows many exotic properties under extreme conditions. By using resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges. The superconducting transition temperature T c increases with applied pressure, and reaches a maximum of 4.0 K at 14.6 GPa, followed by a slight drop but remaining almost constant value up to 68.5 GPa. At pressures above 21.2 GPa, a second superconducting phase with the maximum T c of about 6.0 K appears and coexists with the original one to the maximum pressure studied in this work. In situ high-pressure synchrotron X-ray diffraction and Raman spectroscopy combined with theoretical calculations indicate the observed two-stage superconducting behavior is correlated to the structural phase transition from ambient Cmcm phase to high-pressure C2/m phase around 6 GPa, and to a mixture of two high-pressure phases of C2/m and P-1 above 20 GPa. The combination of structure, transport measurement, and theoretical calculations enable a complete understanding of the emerging exotic properties in 3D topological materials under extreme environments.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological materials by molecular beam epitaxy

Topology appears across condensed matter physics to describe a wide array of phenomena which could alter, augment, or fundamentally change the functionality of many technologies. Linking the basic science of topological materials to applications requires producing high-quality thin films. This will enable combining dissimilar materials while utilizing dimensionality, symmetry, and strain to create or control the electronic phase, as well as platforms to fabricate novel devices. Yet, one of the longstanding challenges in the field remains understanding and controlling the basic material properties of epitaxial thin films. Here, we discuss how understanding the fundamental properties of topological materials grown by molecular beam epitaxy (MBE) is key to deepening the knowledge of the basic physics, while developing a new generation of topological devices. A focus will be on the MBE growth of intrinsic materials, creation, and control of superconducting and magnetic topological phases. Addressing these questions in the coming decade will undoubtedly uncover many surprises as new materials are discovered and their growth as high-quality thin films is refined.

2d quantum materials↗
DOE OSTI2019

Quantum material topology via defect engineering

Current approaches of discovering new topological quantum materials, such as (magnetic) Weyl materials, by screening material databases or by rational design suffer from experimental challenges in growing the material in the desired geometry, hampering their potential applications. We take an approach of defect-engineering a topology starting from systems with experimentally well-controlled growth . Using SnTe, an experimentally viable topological crystalline insulator, as our model system, we elucidate the different effects of breaking time-reversal, inversion, and mirror symmetries using magnetic dopant defects, to controllably induce a topological phase transition. To this effect, we compute the thermodynamics, magnetism, and band-structure topology of magnetically doped SnTe using a full ab initio approach. In this process, we have discovered that Cr-doped SnTe is a Weyl semimetal. We have computed its classic Fermi-arc experimental signature on the (001) surface and also showed that it has a large anamolous Hall conductivity (AHC) of ~ 250 Ω - 1 cm - 1 . We predict a large Curie temperature ( T c ) of 62 K even at 3.3 % doping, with both T c and AHC being tunable with Cr concentration, suggesting potential for room-temperature applications. Our study in general paves the way for defect-designing room-temperature topological quantum phases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Criteria for Realizing Room-Temperature Electrical Transport Applications of Topological Materials

The unusual electronic states found in topological materials can enable a new generation of devices and technologies, yet a long-standing challenge has been finding materials without deleterious parallel bulk conduction. This can arise either from defects or thermally activated carriers. In this study, the criteria that materials need to meet to realize transport properties dominated by the topological states, a necessity for a topological device, are clarified. This is demonstrated for 3D topological insulators, 3D Dirac materials, and 1D quantum anomalous Hall insulators, though this can be applied to similar systems. The key parameters are electronic bandgap, dielectric constant, and carrier effective mass, which dictate under what circumstances (defect density, temperature, etc.) the unwanted bulk state will conduct in parallel to the topological states. As these are fundamentally determined by the basic atomic properties, simple chemical arguments can be used to navigate the phase space to ultimately find improved materials. This will enable rapid identification of new systems with improved properties, which is crucial to designing new material systems and push a new generation of topological technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Discrete scale invariance of the quasi-bound states at atomic vacancies in a topological material

Recently, log-periodic quantum oscillations have been detected in the topological materials zirconium pentatelluride (ZrTe 5 ) and hafnium pentatelluride (HfTe 5 ), displaying an intriguing discrete scale invariance (DSI) characteristic. In condensed materials, the DSI is considered to be related to the quasi-bound states formed by massless Dirac fermions with strong Coulomb attraction, offering a feasible platform to study the long-pursued atomic-collapse phenomenon. Here, we demonstrate that a variety of atomic vacancies in the topological material HfTe 5 can host the geometric quasi-bound states with a DSI feature, resembling an artificial supercritical atom collapse. The density of states of these quasi-bound states is enhanced, and the quasi-bound states are spatially distributed in the “orbitals” surrounding the vacancy sites, which are detected and visualized by low-temperature scanning tunneling microscope/spectroscopy. By applying the perpendicular magnetic fields, the quasi-bound states at lower energies become wider and eventually invisible; meanwhile, the energies of quasi-bound states move gradually toward the Fermi energy (E F ). These features are consistent with the theoretical prediction of a magnetic field–induced transition from supercritical to subcritical states. The direct observation of geometric quasi-bound states sheds light on the deep understanding of the DSI in quantum materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Topological Materials for Functional Optoelectronic Devices

The recent realization of topology as a mathematical concept in condensed matter systems has shattered Landau's widely accepted classification of phases by spontaneous symmetry breaking as he famously said, “a particular symmetry property exists or does not exist.” Topological materials (TMs) such as topological insulators and topological semimetals, are characterized by properties that depend on the topology of the band structure. Such dependence has drastic implications on the optical, electrical, and thermal properties of the material. Fundamental physics of TMs is currently under active research in condensed matter, materials science, and high energy physics. Here, recent advances in exploiting the unique properties of TMs to realize functional optoelectronic devices are surveyed. Current and future applications that are, or may be, enabled by their unique properties are discussed. Although many theoretical ideas have been proposed over the past decade or so on using TMs in optoelectronic applications, the focus will be on experimentally realized devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Extrinsic Nonlinear Kerr Rotation in Topological Materials under a Magnetic Field

Topological properties in quantum materials are often governed by symmetry and tuned by crystal structure and external fields, and hence, symmetry-sensitive nonlinear optical measurements in a magnetic field are a valuable probe. Here, we report nonlinear magneto-optical second harmonic generation (SHG) studies of nonmagnetic topological materials including bilayer WTe 2 , monolayer WSe 2 , and bulk TaAs. The polarization-resolved patterns of optical SHG under a magnetic field show nonlinear Kerr rotation in these time-reversal symmetric materials. For materials with 3-fold rotational symmetric lattice structure, the SHG polarization pattern rotates just slightly in a magnetic field, whereas in those with mirror or 2-fold rotational symmetry, the SHG polarization pattern rotates greatly and distorts. Further, these different magneto-SHG characters can be understood by considering the superposition of the magnetic field-induced time-noninvariant nonlinear optical tensor and the crystal-structure-based time-invariant counterpart. The situation is further clarified by scrutinizing the Faraday rotation, whose subtle interplay with crystal symmetry accounts for the diverse behavior of the extrinsic nonlinear Kerr rotation in different materials. Our work illustrates the application of magneto-SHG techniques to directly probe nontrivial topological properties, and underlines the importance of minimizing extrinsic nonlinear Kerr rotation in polarization-resolved magneto-optical studies.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Two-dimensional topological materials discovery by symmetry-indicator method

Two-dimensional (2D) topological materials (TMs) have attracted tremendous attention due to the promise of revolutionary devices with nondissipative electric or spin currents. Unfortunately, the scarcity of 2D TMs holds back the experimental realization of such devices. In this work, based on our recently developed, highly efficient TM discovery algorithm using symmetry indicators, we explore the possible 2D TMs in all nonmagnetic compounds in four recently proposed materials databases for possible 2D materials. We identify hundreds of 2D TM candidates, including 205 topological (crystalline) insulators and 299 topological semimetals. In particular, we highlight MoS, with a mirror Chern number of –4, as a possible experimental platform for studying the interaction-induced modification to the topological classification of materials. Here, our results winnow out the topologically interesting 2D materials from these databases and provide a TM gene pool for further experimental studies.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Topological defects and topological materials

We report that defects in materials that interpolate between two orientation states such as domain walls and those which relate to some kind of material discontinuity, e.g. dislocations and disclinations, comprise topological defects. Noncoplanar vector arrangements, e.g. vortices, skyrmions, and possibly monopole-like excitations, also belong to this family of defects. Presence of such defects affects many of the macroscopic properties of materials, for example electronic transport and strength. Materials in which topological aspects, e.g. edge or surface states, affect the electronic, transport and other properties can be described as topological materials. Topological insulators, topological superconductors and certain Dirac materials, e.g. graphene and Weyl semimetals, belong to this class of materials. Lastly, these materials possess unusual functionalities potentially useful in a variety of information processing and quantum computation based applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Topological materials discovery using electron filling constraints

Nodal semimetals are classes of topological materials that have nodal-point or nodal-line Fermi surfaces, which give them novel transport and topological properties. Despite being highly sought after, there are currently very few experimental realizations, and identifying new materials candidates has mainly relied on exhaustive database searches. Here we show how recent studies on the interplay between electron filling and nonsymmorphic space-group symmetries can guide the search for filling-enforced nodal semimetals. We recast the previously derived constraints on the allowed band-insulator fillings in any space group into a new form, which enables effective screening of materials candidates based solely on their space group, electron count in the formula unit, and multiplicity of the formula unit. This criterion greatly reduces the computation load for discovering topological materials in a database of previously synthesized compounds. As a demonstration, we focus on a few selected nonsymmorphic space groups which are predicted to host filling-enforced Dirac semimetals. Of the more than 30,000 entires listed, our filling criterion alone eliminates 96% of the entries before they are passed on for further analysis. We discover a handful of candidates from this guided search; among them, the monoclinic crystal Ca2Pt2Ga is particularly promising.

Chen, Ru↗
DOE OSTI2025

Identifying Band Inversions in Topological Materials Using Diffusion Monte Carlo

Topological insulators are characterized by insulating bulk states and robust metallic surface states. Band inversion is a hallmark of topological insulators. At time-reversal invariant points in the Brillouin zone, spin–orbit coupling (SOC) induces a swapping of orbital character at the bulk band edges. Reliably detecting band inversion in solid-state systems with many-body methods would aid in identifying possible candidates for spintronics and quantum computing applications and improve our understanding of the physics behind topologically nontrivial systems. Density functional theory (DFT) methods are a well-established means of investigating these interesting materials due to their favorable balance of computational cost and accuracy but often struggle to accurately model the electron–electron correlations present in the many materials containing heavier elements. In this work, we develop a novel method to detect band inversion within continuum quantum Monte Carlo (QMC) methods that can accurately treat the electron correlation and spin–orbit coupling that are crucial to the physics of topological insulators. Our approach applies a momentum-space-resolved atomic population analysis throughout the first Brillouin zone utilizing the Löwdin method and the one-body reduced density matrix produced with diffusion Monte Carlo (DMC). We integrate this method into QMCPACK, an open source ab initio QMC package, so that these ground-state methods can be used to complement experimental studies and validate prior DFT work on predicting the band structures of correlated topological insulators. Here, we demonstrate this new technique on the topological insulator bismuth telluride, which displays band inversion between its Bi-p and Te-p states at the Γ-point. We show an increase in charge on the bismuth-p orbital and a decrease in charge on the tellurium-p orbital when comparing band structures with and without SOC. Additionally, we use our method to compare the degree of band inversion present in monolayer Bi 2 Te 3 , which has no interlayer van der Waals interactions, to that seen in the bilayer and bulk. The method presented here will enable future many-body studies of band inversion that can shed light on the delicate interplay between correlation and topology in correlated topological materials.

Band structure↗
DOE OSTI2018

Discovery of log-periodic oscillations in ultraquantum topological materials

Quantum oscillations are usually the manifestation of the underlying physical nature in condensed matter systems. Here, we report a new type of log-periodic quantum oscillations in ultraquantum three-dimensional topological materials. Beyond the quantum limit (QL), we observe the log-periodic oscillations involving up to five oscillating cycles (five peaks and five dips) on the magnetoresistance of high-quality single-crystal ZrTe 5 , virtually showing the clearest feature of discrete scale invariance (DSI). Further, theoretical analyses show that the two-body quasi-bound states can be responsible for the DSI feature. Finally, our work provides a new perspective on the ground state of topological materials beyond the QL.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Quantum friction in two-dimensional topological materials

In this paper, we develop the theory of quantum friction in two-dimensional topological materials. The quantum drag force on a metallic nanoparticle moving above such systems is sensitive to the nontrivial topology of their electronic phases, shows a novel distance scaling law, and can be manipulated through doping or via the application of external fields. We use the developed framework to investigate quantum friction due to the quantum Hall effect in magnetic field biased graphene, and to topological phase transitions in the graphene family materials. Finally, it is shown that topologically nontrivial states in two-dimensional materials enable an increase of two orders of magnitude in the quantum drag force with respect to conventional neutral graphene systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Detection of topological materials with machine learning

Databases compiled using ab initio and symmetry-based calculations now contain tens of thousands of topological insulators and topological semimetals. This makes the application of modern machine learning methods to topological materials possible. Using gradient boosted trees, we show how to construct a machine learning model which can predict the topology of a given existent material with an accuracy of 90%. Such predictions are orders of magnitude faster than actual ab initio calculations. In this work, we use machine learning models to probe how different material properties affect topological features. Notably, we observe that topology is mostly determined by the “coarse-grained” chemical composition and crystal symmetry and depends little on the particular positions of atoms in the crystal lattice. We identify the sources of our model's errors and we discuss approaches to overcome them.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

High-throughput search for magnetic topological materials using spin-orbit spillage, machine learning, and experiments

Magnetic topological insulators and semi-metals have a variety of properties that make them attractive for applications including spintronics and quantum computation. Here, we use systematic high-throughput density functional theory calculations to identify magnetic topological materials from the ≈ 40000 three-dimensional materials in the JARVIS-DFT database. First, we screen materials with net magnetic moment > 0.5 μB and spin-orbit spillage > 0.25, resulting in 25 insulating and 564 metallic candidates. The spillage acts as a signature of spin-orbit induced band-inversion. Then, we carry out calculations of Wannier charge centers, Chern numbers, anomalous Hall conductivities, surface bandstructures, and Fermi-surfaces to determine interesting topological characteristics of the screened compounds. We also train machine learning models for predicting the spillage, bandgaps, and magnetic moments of new compounds, to further accelerate the screening process. We experimentally synthesize and characterize a few candidate materials to support our theoretical predictions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe 5

ZrTe 5 is a layered material that exhibits intricate topological effects. Intensive theoretically and experimental efforts have been devoted to try to understand the physics in this materials. In this paper the temperature dependent magneto-transport properties of ZrTe 5 thin flakes are investigated. A characteristic temperature T* is observed in the temperature dependence of three different types of magnetoresistance simultaneously, which are the saturated Hall anomaly, the chiral anomaly and the longitudinal magnetoresistance. Furthermore, the value of T* decreases monotonically from 200K to 160K with increasing thickness of the ZrTe 5 thin flakes from 42nm to 89nm. Temperature induced topological phase transitions are attributed to the cause of such anomaly in the three types of magnetoresistance at T*. Overall, our findings provide a multi-parameter indicator for the emergence of topological phase transition in ZrTe 5 and could be extended to the study of other topological materials. The temperature dependence of the three types of magnetoresistance also shed light on the role of anomalous Hall Effect in the transport properties of ZrTe 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗