Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy
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Pelliccione, M.↗
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Electron heating induced by microwave photoexcitation in the GaAs/AlGaAs two-dimensional electron system
Not Available
Nanayakkara, T. R.↗
Polarization-dependent plasmonic photocurrents in two-dimensional electron systems
Plasmonic polarization dependent photocurrents in a homogeneous two-dimensional electron system are studied. Those effects are completely different from the photon drag and electronic photogalvanic effects as well as from the plasmonic ratchet effect in a density modulated two-dimensional electron system. Linear and helicity-dependent contributions to the photocurrent are found. The linear contribution can be interpreted as caused by the longitudinal and transverse plasmon drag effect. The helicity-dependent contribution originates from the non-linear electron convection and changes its sign with reversing the plasmonic field helicity. It is shown that the helicity-dependent component of the photocurrent can exceed the linear one by several orders of magnitude in high-mobility two-dimensional electron systems. The results open possibilities for all-electronic detection of the radiation polarization states by exciting the plasmonic photocurrents in two-dimensional electron systems.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System
Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. Furthermore, in order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. By utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO 3 /SrTiO 3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson–Schrödinger sub-band model. In particular, the large nonlinear dielectric response of SrTiO 3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. This study provides a broad framework for understanding various reported phenomena at the LaAlO 3 /SrTiO 3 interface.
36 MATERIALS SCIENCE↗
Insulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron system
We study interference and interactions in an InAs/InAsSb two-dimensional electron system. In such a system, spin-orbit interactions are shown to be strong, which result in weak antilocalization (WAL) and thereby positive magnetoresistance around zero magnetic field. After suppressing WAL by the magnetic field, we demonstrate that classical positive magnetoresistance due to spin-orbit coupling plays a role. With further increasing the magnetic field, the system undergoes a direct insulator-quantum Hall transition. By analyzing the magnetotransport behavior in different field regions, we show that both electron-electron interactions and spin-related effects are essential in understanding the observed direct transition.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Anticorrelation of compressibility and resistivity in a microwave-irradiated two-dimensional electron system
Here, we report our direct study of the compressibility on an ultrahigh mobility two-dimensional electron system ( μ e ~ 1 × 10 7 cm 2 /V s) in GaAs/AlGaAs quantum wells under microwave irradiation. The field penetration current results show that the quantum capacitance oscillates with microwave-induced resistance oscillations, yet, the trend is opposite with respect to the compressibility of equilibrium states in previous theoretical explanations. The anomalous phenomena provide a platform for study on the nonequilibrium system under microwaves. Moreover, the quantum capacitance indication for a multiphoton process around j = 1 / 2 is detected under an intensive microwave below 30 GHz.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Correlated States of Two-dimensional Electron Systems in AlAs Quantum Wells
Two-dimensional (2D) carrier systems confined to modulation-doped semiconductor hetero-structures provide a nearly ideal testing ground for exploring new physical phenomena. At low temperatures and in the presence of a strong magnetic field, these systems exhibit fascinating, often unexpected, many-body states, arising from the strong electron-electron interaction. In our work, we studied various many-body states of different 2D systems. These included 2D electron and hole systems confined to GaAs and also to AlAs quantum wells, including wide quantum wells where the charge distribution is bilayer like. We observed and reported new phenomena in these systems, including new (even-denominator) fractional quantum Hall states, Wigner crystal solid phases, and composite fermion compressible states.
36 MATERIALS SCIENCE↗
Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects
The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO 3 and SrTiO 3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, the fundamental origins of the 2DES are still not understood, e.g., the microscopic mechanisms of coexisting interface conductivity and magnetism. In this paper, we report a comprehensive spectroscopic investigation on the depth profile of 2DES-relevant Ti 3d interface carriers using depth- and element-specific techniques like standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within three unit cells from the n-type interface in the SrTiO 3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first three unit cells of the opposing LaAlO3 layer (~10 Å). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO 3 /SrTiO 3 interface have disparate explanations as originating from different types of interface carriers.
36 MATERIALS SCIENCE↗
Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System
We create laterally large and low-disorder GaAs quantum-well-based quantum dots that act as small two-dimensional electron systems. We monitor tunneling of single electrons to the dots by means of capacitance measurements and identify single-electron capacitance peaks in the addition spectrum from occupancies of one up to thousands of electrons. The data show two remarkable phenomena in the Landau level filling factor range ν = 2 to ν = 5 in selective probing of the edge states of the dot: (i) Coulomb blockade peaks arise from the entrance of two electrons rather than one; (ii) at and near ν = 5/2 and at fixed gate voltage, these double-height peaks appear uniformly in a magnetic field with a flux periodicity of h/2e, but they group into pairs at other filling factors.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Metal–insulator transition and low-density phases in a strongly-interacting two-dimensional electron system
Highlights: • Quantum phase transition observed in ultrahigh mobility SiGe/Si/SiGe quantum wells. • Metallic state observed in a strongly interacting spinless two-valley electron system. • Indication of band flattening at the Fermi level reported. • Transport evidence for a sliding two-dimensional quantum electron solid reported. We review recent experimental results on the metal–insulator transition and low-density phases in strongly-interacting, low-disordered silicon-based two-dimensional electron systems. Special attention is given to the metallic state in ultra-clean SiGe quantum wells and to the evidence for a flat band at the Fermi level and a quantum electron solid.
36 MATERIALS SCIENCE↗
Transverse plasmon mode in a screened two-dimensional electron system
The dispersion and damping of the transverse plasmon mode in a screened two-dimensional (2D) electron system are theoretically studied. It is shown that the transverse plasmon mode has a much larger quality factor and a smaller retardation factor at terahertz (THz) frequencies in comparison with those known for the longitudinal plasmon mode. In addition, the electric dipole moment of the transverse plasmon mode in the screened 2D electron system can be comparable with the dipole moment of the longitudinal plasmon mode. These properties of the transverse plasmon mode make it attractive for use in plasmon devices of the THz frequency range.
36 MATERIALS SCIENCE↗
Excitation of plasmonic terahertz photovoltaic effects in a periodic two-dimensional electron system by the attenuated total reflection method
The problem of the rectification of terahertz radiation due to plasmonic nonlinearities in a periodic two-dimensional electron system upon the excitation of plasma oscillations by the attenuated total reflection method is solved. This model allows the independent study of different plasmonic rectification mechanisms, i.e., plasmonic electron drag and plasmonic ratchet effects.
36 MATERIALS SCIENCE↗
Working principles of doping-well structures for high-mobility two-dimensional electron systems
Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultrahigh-mobility 2DESs, the working principles of the doping-well structure have not been reported. As such, here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.
36 MATERIALS SCIENCE↗
Time-domain measurement of terahertz frequency magnetoplasmon resonances in a two-dimensional electron system by the direct injection of picosecond pulsed currents
We have investigated terahertz (THz) frequency magnetoplasmon resonances in a two-dimensional electron system through the direct injection of picosecond duration current pulses. The evolution of the time-domain signals was measured as a function of magnetic field, and the results were found to be in agreement with calculations using a mode-matching approach for four modes observed in the frequency range above 0.1 THz. This introduces a generic technique suitable for sampling ultrafast carrier dynamics in low-dimensional semiconductor nanostructures at THz frequencies.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Unconventional quantum oscillations and evidence of nonparabolic electronic states in quasi-two-dimensional electron system at complex oxide interfaces
The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states experimentally in these 2DES to advance technological applications. Here, we present insights into the electronic states of the 2DES at oxide interfaces through comprehensive investigations of Shubnikov–de Haas oscillations in three different systems: EuO/KTaO 3 , LaAlO 3 /SrTiO 3 , and amorphous-LaAlO 3 /KTaO 3 . To accurately resolve these oscillations, we conducted transport measurements in high magnetic fields up to 60 T and low temperatures down to 100 mK. For 2D confined electrons at these interfaces, we observed a progressive increase of oscillations frequency and cyclotron mass with the magnetic field. We interpret these universal and intriguing findings by considering the existence of nontrivial electronic bands, for which the 𝐸−𝑘 dispersion incorporates both linear and parabolic relations. In addition to providing experimental evidence for nonparabolic electronic states in KTaO 3 and SrTiO 3 2DES, the unconventional oscillations presented in this study establish a paradigm for quantum oscillations in 2DES based on perovskite transition metal oxides, where the oscillation frequencies in 1/𝐵 exhibit quadratic dependence on the magnetic field.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Measurement of cyclotron resonance relaxation time in the two-dimensional electron system
Dependence of cyclotron magneto-plasma mode relaxation time on electron concentration and temperature in the two-dimensional electron system in GaAs/AlGaAs quantum wells has been studied. Comparative analysis of cyclotron and transport relaxation time has been carried out. It was demonstrated that with the temperature increase transport relaxation time tends to cyclotron relaxation time. It was also shown that cyclotron relaxation time, as opposed to transport relaxation time, has a weak electron density dependence. The cyclotron time can exceed transport relaxation time by an order of magnitude in a low-density range.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructures
We have implemented a new bolometric method to detect resonances in magneto-absorption of microwave radiation by two-dimensional electron systems (2DES) in selectively doped GaAs/AlGaAs heterostructures. Radiation is absorbed by the 2DES and the thermally activated conductivity of the doping layer supplying electrons to the 2DES serves as a thermometer. The resonant absorption brought about by excitation of the confined magnetoplasma modes appears as peaks in the magnetic field dependence of the low-frequency impedance measured between the Schottky gate and 2DES.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗